公开(公告)号：US11482450B2

公开(公告)日：2022-10-25

申请号：US17187059

申请日：2021-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia Hsuan Lee ,  Chun-Wei Hsu ,  Chia-Wei Ho ,  Chi-Hsiang Shen ,  Li-Chieh Wu ,  Jian-Ci Lin ,  Chi-Jen Liu ,  Yi-Sheng Lin ,  Yang-Chun Cheng ,  Liang-Guang Chen ,  Kuo-Hsiu Wei ,  Kei-Wei Chen

IPC: H01L21/768 ,  H01L21/3105 ,  C09G1/02 ,  H01L21/02

Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.

公开(公告)号：US10692732B2

公开(公告)日：2020-06-23

申请号：US16138806

申请日：2018-09-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wei Hsu ,  Chi-Jen Liu ,  Kei-Wei Chen ,  Liang-Guang Chen ,  William Weilun Hong ,  Chi-hsiang Shen ,  Chia-Wei Ho ,  Yang-chun Cheng

IPC: H01L21/302 ,  H01L21/321 ,  C09G1/02 ,  H01L21/768 ,  H01L23/532

Abstract: The current disclosure describes a metal surface chemical mechanical polishing technique. A complex agent or micelle is included in the metal CMP slurry. The complex agent bonds with the oxidizer contained in the CMP slurry to form a complex, e.g., a supramolecular assembly, with an oxidizer molecule in the core of the assembly and surrounded by the complex agent molecule(s). The formed complexes have an enlarged size.

公开(公告)号：US10157781B2

公开(公告)日：2018-12-18

申请号：US15401238

申请日：2017-01-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wei Hsu ,  Chi-Jen Liu ,  Cheng-Chun Chang ,  Yi-Sheng Lin ,  Pinlei Edmund Chu ,  Liang-Guang Chen

IPC: H01L21/336 ,  H01L21/768 ,  H01L29/66 ,  H01L21/321 ,  H01L21/02

Abstract: Methods for forming semiconductor structures are provided. The method for forming a semiconductor structure includes forming a conductive material in the trench and over a top surface of the material layer and polishing the conductive material with a slurry to expose the top surface of the material layer and to form a conductive structure in the trench. The method for forming a semiconductor structure further includes forming a material layer over a substrate and forming a trench in the material layer. The method for forming a semiconductor structure further includes removing the slurry with a reducing solution. In addition, the reducing solution includes a reducing agent, and a standard electrode voltage of the conductive material is greater than a standard electrode voltage of the reducing agent.

公开(公告)号：US09553161B2

公开(公告)日：2017-01-24

申请号：US14746061

申请日：2015-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Jen Liu ,  Li-Chieh Wu ,  Shich-Chang Suen ,  Liang-Guang Chen

IPC: H01L21/8234 ,  H01L29/51 ,  H01L29/423 ,  H01L29/49 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/321 ,  H01L29/40

CPC classification number: H01L29/517 ,  H01L21/02068 ,  H01L21/02096 ,  H01L21/02244 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28229 ,  H01L21/28518 ,  H01L21/3212 ,  H01L21/82345 ,  H01L21/823456 ,  H01L21/823842 ,  H01L29/401 ,  H01L29/42376 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/7833 ,  H01L29/7843

Abstract: A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate and forming a metal gate stack including a metal gate electrode over the semiconductor substrate. The method also includes applying an oxidizing solution containing an oxidizing agent over the metal gate electrode to oxidize the metal gate electrode to form a metal oxide layer on the metal gate electrode.

Abstract translation: 提供一种形成半导体器件的方法。 该方法包括提供半导体衬底并在半导体衬底上形成包括金属栅电极的金属栅叠层。 该方法还包括在金属栅电极上施加含有氧化剂的氧化溶液以氧化金属栅电极，以在金属栅电极上形成金属氧化物层。

公开(公告)号：US09076766B2

公开(公告)日：2015-07-07

申请号：US13917145

申请日：2013-06-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Jen Liu ,  Li-Chieh Wu ,  Shich-Chang Suen ,  Liang-Guang Chen

IPC: H01L21/8234 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L29/517 ,  H01L21/02068 ,  H01L21/02096 ,  H01L21/02244 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28229 ,  H01L21/28518 ,  H01L21/3212 ,  H01L21/82345 ,  H01L21/823456 ,  H01L21/823842 ,  H01L29/401 ,  H01L29/42376 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/7833 ,  H01L29/7843

Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate with a metal gate stack formed on the semiconductor substrate, and the metal gate stack includes a metal gate electrode. The semiconductor device also includes a metal oxide layer formed over the metal gate stack and in direct contact with the metal gate electrode, and a thickness of the metal oxide layer is in a range from about 15 Å to about 40 Å. The metal oxide layer has a first portion made of an oxidized material of the metal gate electrode and has a second portion made of a material different from that of the first portion.

Abstract translation: 提供了用于形成半导体器件的机构的实施例。 半导体器件包括在半导体衬底上形成有金属栅堆叠的半导体衬底，并且金属栅叠层包括金属栅电极。 半导体器件还包括形成在金属栅叠层上并与金属栅电极直接接触的金属氧化物层，并且金属氧化物层的厚度在大约至大约的范围内。 金属氧化物层具有由金属栅电极的氧化材料制成的第一部分，并且具有由不同于第一部分的材料制成的第二部分。

公开(公告)号：US12224179B2

公开(公告)日：2025-02-11

申请号：US18184438

申请日：2023-03-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Sheng Lin ,  Chi-Jen Liu ,  Chi-Hsiang Shen ,  Te-Ming Kung ,  Chun-Wei Hsu ,  Chia-Wei Ho ,  Yang-Chun Cheng ,  William Weilun Hong ,  Liang-Guang Chen ,  Kei-Wei Chen

IPC: H01L21/321 ,  C09G1/02 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L23/535

Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.

公开(公告)号：US20240342856A1

公开(公告)日：2024-10-17

申请号：US18301462

申请日：2023-04-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Mu You ,  Chi-Jen Liu

IPC: B24B37/04 ,  C09G1/02 ,  C09K3/14

CPC classification number: B24B37/044 ,  C09G1/02 ,  C09K3/1436

Abstract: A method of performing a polishing process is provided. The method may include forming spherical titanium dioxide nano-particles, covering the spherical titanium dioxide nano- particles with an organic coating, storing the spherical titanium dioxide nano-particles together with an oxidizer, forming a polishing solution with the spherical titanium dioxide nano-particles, applying the polishing solution on a surface of a work piece, and polishing the surface of the work piece with the polishing solution.

公开(公告)号：US20230365903A1

公开(公告)日：2023-11-16

申请号：US18359364

申请日：2023-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pinlei Edmund Chu ,  Chun-Wei Hsu ,  Ling-Fu Nieh ,  Chi-Jen Liu ,  Liang-Guang Chen ,  Yi-Sheng Lin

IPC: C11D11/00 ,  C11D7/26 ,  H01L21/02 ,  H01L21/321

CPC classification number: C11D11/0047 ,  C11D7/268 ,  H01L21/02074 ,  C11D7/261 ,  H01L21/3212

Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.

公开(公告)号：US11633829B2

公开(公告)日：2023-04-25

申请号：US16573957

申请日：2019-09-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Sheng Lin ,  Chi-Hsiang Shen ,  Chi-Jen Liu ,  Chun-Wei Hsu ,  Yang-Chun Cheng ,  Kei-Wei Chen

IPC: B24B37/015 ,  B24B37/20 ,  B24B53/017 ,  B24B57/02 ,  B24B49/14

Abstract: A chemical mechanical polishing (CMP) system includes a polishing pad configured to polish a substrate. The CMP system further includes a heating system configured to adjust a temperature of the polishing pad. The heating system comprises at least one heating element spaced apart from the polishing pad. The CMP system further includes a sensor configured to measure the temperature of the polishing pad.

公开(公告)号：US20200098590A1

公开(公告)日：2020-03-26

申请号：US16138806

申请日：2018-09-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wei Hsu ,  Chi-Jen Liu ,  Kei-Wei Chen ,  Liang-Guang Chen ,  William Weilun Hong ,  Chi-hsiang Shen ,  Chia-Wei Ho ,  Yang-chun Cheng

IPC: H01L21/321 ,  H01L21/768 ,  C09G1/02

Abstract: The current disclosure describes a metal surface chemical mechanical polishing technique. A complex agent or micelle is included in the metal CMP slurry. The complex agent bonds with the oxidizer contained in the CMP slurry to form a complex, e.g., a supramolecular assembly, with an oxidizer molecule in the core of the assembly and surrounded by the complex agent molecule(s). The formed complexes have an enlarged size.