公开(公告)号：US09882553B2

公开(公告)日：2018-01-30

申请号：US15259976

申请日：2016-09-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Man-Ho Kwan ,  Fu-Wei Yao ,  Ru-Yi Su ,  King-Yuen Wong

IPC分类号： H03L5/00 ,  H03K5/08 ,  H01L27/088 ,  H01L29/778

CPC分类号： H03K5/08 ,  H01L27/0883 ,  H01L29/778

摘要： A semiconductor device includes a first transistor and a clamping circuit. The first transistor is arranged to generate an output signal according to a control signal. The clamping circuit is arranged to generate the control signal according to an input signal, and to clamp the control signal to a predetermined signal level when the input signal exceeds the predetermined signal level.

公开(公告)号：US09865732B2

公开(公告)日：2018-01-09

申请号：US15171322

申请日：2016-06-02

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chun Hsiung Tsai ,  Su-Hao Liu ,  Chien-Tai Chan ,  King-Yuen Wong ,  Chien-Chang Su

IPC分类号： H01L29/76 ,  H01L29/78 ,  H01L21/265 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10

CPC分类号： H01L29/7834 ,  H01L21/26506 ,  H01L21/26586 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/66492 ,  H01L29/6653 ,  H01L29/66636

摘要： An integrated circuit includes a gate electrode and spacers along sidewalls of the gate electrode. The integrated circuit further includes a source/drain (S/D) region adjacent to the gate electrode. The S/D region includes a diffusion barrier structure at least partially in a recess of the substrate. The diffusion barrier structure includes an epitaxial layer having a first region and a second region. The first region is thinner than the second region, and the first region is misaligned with respect to the sidewalls of the gate electrode. The S/D region includes a doped silicon-containing structure over the diffusion barrier structure. The first region of the diffusion barrier structure is configured to partially prevent dopants of the doped silicon-containing structure from diffusing into the substrate. The second region of the diffusion barrier structure is configured to substantially completely prevent the dopants of the doped silicon-containing structure from diffusing into the substrate.

公开(公告)号：US20170338316A1

公开(公告)日：2017-11-23

申请号：US15670135

申请日：2017-08-07

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Fu-Wei Yao ,  Chun-Wei Hsu ,  Chen-Ju Yu ,  Jiun-Lei Jerry Yu ,  Fu-Chih Yang ,  Chih-Wen Hsiung ,  King-Yuen Wong

IPC分类号： H01L29/40 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L29/402 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

摘要： A transistor includes a first layer over a substrate. The transistor also includes a second layer over the first layer. The transistor further includes a carrier channel layer at an interface of the first layer and the second layer. The transistor additionally includes a gate structure, a drain, and a source over the second layer. The transistor also includes a passivation material in the second layer between an edge of the gate structure and an edge of the drain in a top-side view. The carrier channel layer has a smaller surface area than the first layer between the edge of the gate structure and the edge of the drain in the top-side view.

公开(公告)号：US09502311B2

公开(公告)日：2016-11-22

申请号：US14872197

申请日：2015-10-01

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： King-Yuen Wong ,  Chun-Wei Hsu ,  Chen-Ju Yu ,  Fu-Wei Yao ,  Jiun-Lei Jerry Yu ,  Fu-Chih Yang ,  Po-Chih Chen

IPC分类号： H01L29/778 ,  H01L21/8252 ,  H01L29/66 ,  H01L29/10 ,  H01L27/06 ,  H01L27/02 ,  H01L21/02 ,  H01L21/265 ,  H01L21/306 ,  H01L21/768 ,  H01L29/20

CPC分类号： H01L27/0255 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/26513 ,  H01L21/26546 ,  H01L21/30612 ,  H01L21/76877 ,  H01L21/76898 ,  H01L21/8252 ,  H01L21/8258 ,  H01L23/5226 ,  H01L27/0605 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/6609 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/861

摘要： A silicon substrate having a III-V compound layer disposed thereon is provided. A diode is formed in the silicon substrate through an ion implantation process. The diode is formed proximate to an interface between the silicon substrate and the III-V compound layer. An opening is etched through the III-V compound layer to expose the diode. The opening is filled with a conductive material. Thereby, a via is formed that is coupled to the diode. A High Electron Mobility Transistor (HEMT) device is formed at least partially in the III-V compound layer.

摘要翻译： 提供了其上设置III-V化合物层的硅衬底。 通过离子注入工艺在硅衬底中形成二极管。 二极管形成在硅衬底和III-V化合物层之间的界面附近。 通过III-V化合物层蚀刻开口以暴露二极管。 开口填充有导电材料。 由此，形成与二极管耦合的通孔。 至少部分地在III-V化合物层中形成高电子迁移率晶体管（HEMT）器件。

公开(公告)号：US09412835B2

公开(公告)日：2016-08-09

申请号：US14790588

申请日：2015-07-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： King-Yuen Wong ,  Chen-Ju Yu ,  Jiun-Lei Jerry Yu ,  Po-Chih Chen ,  Fu-Wei Yao ,  Fu-Chih Yang

IPC分类号： H01L21/82 ,  H01L29/66 ,  H01L21/265 ,  H01L21/311 ,  H01L21/306 ,  H01L21/308 ,  H01L29/423 ,  H01L29/40 ,  H01L21/28 ,  H01L29/778 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/20

CPC分类号： H01L29/66462 ,  H01L21/26546 ,  H01L21/266 ,  H01L21/28264 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/41716 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/66621 ,  H01L29/7786 ,  H01L29/7787

摘要： An integrated circuit device includes a first III-V compound layer, a second III-V compound layer over the first III-V compound layer, a gate dielectric over the second III-V compound layer, and a gate electrode over the gate dielectric. An anode electrode and a cathode electrode are formed on opposite sides of the gate electrode. The anode electrode is electrically connected to the gate electrode. The anode electrode, the cathode electrode, and the gate electrode form portions of a rectifier.

公开(公告)号：US08884308B2

公开(公告)日：2014-11-11

申请号：US13650610

申请日：2012-10-12

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Ju Yu ,  Chih-Wen Hsiung ,  Fu-Wei Yao ,  Chun-Wei Hsu ,  King-Yuen Wong ,  Jiun-Lei Jerry Yu ,  Fu-Chih Yang

IPC分类号： H01L29/66 ,  H01L29/20 ,  H01L29/778 ,  H01L29/16 ,  H01L21/02

CPC分类号： H01L29/66462 ,  H01L21/0254 ,  H01L21/2258 ,  H01L21/3065 ,  H01L21/32051 ,  H01L21/321 ,  H01L21/32133 ,  H01L21/324 ,  H01L29/0653 ,  H01L29/0843 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/7787

摘要： A high electron mobility transistor (HEMT) includes a silicon substrate, an unintentionally doped gallium nitride (UID GaN) layer over the silicon substrate. The HEMT further includes a donor-supply layer over the UID GaN layer, a gate structure, a drain, and a source over the donor-supply layer. The HEMT further includes a dielectric layer having one or more dielectric plug portions in the donor-supply layer and top portions between the gate structure and the drain over the donor-supply layer. A method for making the HEMT is also provided.

摘要翻译： 高电子迁移率晶体管（HEMT）包括硅衬底，硅衬底上的无意掺杂的氮化镓（UID GaN）层。 HEMT还包括在供体层上的UID GaN层上的施主供体层，栅极结构，漏极和源极。 HEMT还包括在供体供体层中具有一个或多个电介质塞部分的电介质层和在供体层上的栅极结构和漏极之间的顶部。 还提供了制造HEMT的方法。

公开(公告)号：US10790375B2

公开(公告)日：2020-09-29

申请号：US16394368

申请日：2019-04-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Fu-Wei Yao ,  Chen-Ju Yu ,  King-Yuen Wong ,  Chun-Wei Hsu ,  Jiun-Lei Jerry Yu ,  Fu-Chih Yang ,  Chun Lin Tsai

IPC分类号： H01L29/66 ,  H01L29/45 ,  H01L29/20 ,  H01L29/205 ,  H01L21/02 ,  H01L21/285 ,  H01L29/778 ,  H01L29/08 ,  H01L29/417

摘要： A high electron mobility transistor (HEMT) includes a first compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A salicide source feature and a salicide drain feature are in contact with the first III-V compound layer through the second III-V compound layer. A gate electrode is disposed over a portion of the second compound layer between the salicide source feature and the salicide drain feature.

公开(公告)号：US10411681B2

公开(公告)日：2019-09-10

申请号：US15863229

申请日：2018-01-05

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Man-Ho Kwan ,  Fu-Wei Yao ,  Ru-Yi Su ,  King-Yuen Wong

IPC分类号： H03K5/08 ,  H01L27/088 ,  H01L29/778

摘要： A device includes a first transistor having a first source terminal, a first drain terminal, and a first gate terminal; and a second transistor having a second source terminal, a second drain terminal, and a second gate terminal. The second source terminal is coupled to the first gate terminal and the first source terminal is coupled to the second gate terminal. The first transistor has a first threshold voltage, and the second transistor has a second threshold voltage different from the first threshold voltage.

公开(公告)号：US10276682B2

公开(公告)日：2019-04-30

申请号：US15990241

申请日：2018-05-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Fu-Wei Yao ,  Chen-Ju Yu ,  King-Yuen Wong ,  Chun-Wei Hsu ,  Jiun-Lei Jerry Yu ,  Fu-Chih Yang ,  Chun Lin Tsai

IPC分类号： H01L29/66 ,  H01L29/45 ,  H01L29/20 ,  H01L29/205 ,  H01L21/02 ,  H01L21/285 ,  H01L29/417 ,  H01L29/778 ,  H01L29/08

摘要： A high electron mobility transistor (HEMT) includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A salicide source feature and a salicide drain feature are in contact with the first III-V compound layer through the second III-V compound layer. A gate electrode is disposed over a portion of the second III-V compound layer between the salicide source feature and the salicide drain feature.

公开(公告)号：US09755045B2

公开(公告)日：2017-09-05

申请号：US15196776

申请日：2016-06-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： King-Yuen Wong ,  Chen-Ju Yu ,  Jiun-Lei Jerry Yu ,  Po-Chih Chen ,  Fu-Wei Yao ,  Fu-Chih Yang

IPC分类号： H01L29/66 ,  H01L29/20 ,  H01L21/265 ,  H01L21/311 ,  H01L21/306 ,  H01L21/308 ,  H01L29/423 ,  H01L29/40 ,  H01L21/28 ,  H01L29/778 ,  H01L21/8252 ,  H01L27/06 ,  H01L21/266 ,  H01L21/3065 ,  H01L29/417

CPC分类号： H01L29/66462 ,  H01L21/26546 ,  H01L21/266 ,  H01L21/28264 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/41716 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/66621 ,  H01L29/7786 ,  H01L29/7787

摘要： An integrated circuit device includes a first III-V compound layer, a second III-V compound layer over the first III-V compound layer, a gate dielectric over the second III-V compound layer, and a gate electrode over the gate dielectric. An anode electrode and a cathode electrode are formed on opposite sides of the gate electrode. The anode electrode is electrically connected to the gate electrode. The anode electrode, the cathode electrode, and the gate electrode form portions of a rectifier.