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18 条记录 (耗时 0.027 秒)

    Semiconductor device
    11.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07605422B2

    公开(公告)日：2009-10-20

    申请号：US11846830

    申请日：2007-08-29

    申请人： Masumi Saitoh ,  Ken Uchida

    发明人： Masumi Saitoh ,  Ken Uchida

    IPC分类号： H01L29/792

    CPC分类号： H01L29/4234 ,  H01L21/845 ,  H01L27/115 ,  H01L27/11568 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/66833 ,  H01L29/785 ,  H01L29/792

    摘要： A semiconductor device capable of realizing low-voltage drivability and large storage capacity (miniaturization) by achieving large threshold voltage shifts and long retention time while at the same time suppressing variations in characteristics among memory cells is disclosed. The device includes a semiconductor memory cell having a channel region formed in a semiconductor substrate, a tunnel insulator film on the channel region, a charge storage insulator film on the tunnel insulator film, a control dielectric film on the charge storage film, a control electrode on the control dielectric film, and source/drain regions at opposite ends of the channel region. The memory cell's channel region has a cross-section at right angles to a direction along the channel length, the width W and height H of which are each less than or equal to 10 nm.

    摘要翻译： 公开了一种半导体器件，其能够通过实现大的阈值电压偏移和长的保持时间来实现低电压驱动性和大的存储容量（小型化），同时抑制存储器单元之间的特性变化。 该器件包括半导体存储单元，其具有形成在半导体衬底中的沟道区，沟道区上的隧道绝缘膜，隧道绝缘膜上的电荷存储绝缘膜，电荷存储膜上的控制电介质膜，控制电极 在控制电介质膜上，以及在沟道区的相对端处的源/漏区。 存储单元的沟道区域具有与沿着沟道长度的方向成直角的横截面，其宽度W和高度H都小于或等于10nm。

    Semiconductor memory device
    14.
    发明授权
    Semiconductor memory device 失效
    半导体存储器件

    公开(公告)号：US08467241B2

    公开(公告)日：2013-06-18

    申请号：US13246996

    申请日：2011-09-28

    申请人： Jun Fujiki ,  Kiwamu Sakuma ,  Naoki Yasuda ,  Yukio Nakabayashi ,  Masumi Saitoh

    发明人： Jun Fujiki ,  Kiwamu Sakuma ,  Naoki Yasuda ,  Yukio Nakabayashi ,  Masumi Saitoh

    IPC分类号： G11C11/34

    CPC分类号： H01L29/792 ,  G11C16/0466 ,  H01L27/11568 ,  H01L29/4234

    摘要： In a semiconductor layer, information is written by applying a first potential to a first electrode, applying a second potential that is lower than the first potential to all of back gate electrodes, applying a third potential that is higher than the first potential to the first to (i−1)th front gate electrodes, and applying a fourth potential that is between the second and third potentials to the ith and subsequent front gate electrodes, where “i” is a positive integer and identifies a specific location to which information is to be written.

    摘要翻译： 在半导体层中，通过向第一电极施加第一电位，向所有背栅电极施加低于第一电位的第二电位，向第一电极施加高于第一电位的第三电位，写入信息 到（i-1）个前栅电极，并且将第二和第三电位之间的第四电位施加到第i个和后续的前栅电极，其中“i”是正整数，并且识别信息的特定位置 要写

    Non-volatile semiconductor storage device and method for manufacturing the same
    15.
    发明授权
    Non-volatile semiconductor storage device and method for manufacturing the same 失效
    非易失性半导体存储装置及其制造方法

    公开(公告)号：US07737486B2

    公开(公告)日：2010-06-15

    申请号：US11859142

    申请日：2007-09-21

    申请人： Masumi Saitoh ,  Ken Uchida

    发明人： Masumi Saitoh ,  Ken Uchida

    IPC分类号： H01L29/788

    CPC分类号： H01L29/42324 ,  H01L21/28273 ,  H01L29/165 ,  H01L29/7881

    摘要： A non-volatile semiconductor storage device includes: a semiconductor substrate; a source region and a drain region formed in the semiconductor substrate so as to be separated from each other; a first insulating film formed between the source region and the drain region, on the semiconductor substrate; a floating electrode formed on the first insulating film and including a semiconductor conductive material layer having extension strain; a second insulating film formed on the floating electrode; and a control electrode formed on the second insulating film. The extension strain of the floating electrode becomes gradually small as the location advances from the second insulating film toward the first insulating film, and the floating electrode has extension strain of 0.01% or more at an interface between the floating electrode and the second insulating film, and has extension strain less than 0.01% at an interface between the floating electrode and the first insulating film.

    摘要翻译： 非易失性半导体存储器件包括：半导体衬底; 源极区域和漏极区域，形成在半导体衬底中以便彼此分离; 在所述半导体衬底上形成在所述源极区域和所述漏极区域之间的第一绝缘膜; 形成在所述第一绝缘膜上并具有延伸应变的半导体导电材料层的浮动电极; 形成在浮置电极上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制电极。 浮动电极的延伸应变随着位置从第二绝缘膜向第一绝缘膜前进而逐渐变小，浮动电极在浮动电极和第二绝缘膜之间的界面具有0.01％以上的延伸应变， 并且在浮动电极和第一绝缘膜之间的界面处具有小于0.01％的延伸应变。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    17.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20120235152A1

    公开(公告)日：2012-09-20

    申请号：US13236199

    申请日：2011-09-19

    申请人： Kensuke OTA ,  Masumi Saitoh ,  Toshinori Numata

    发明人： Kensuke OTA ,  Masumi Saitoh ,  Toshinori Numata

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/0673 ,  H01L21/26506 ,  H01L21/26586 ,  H01L29/42392 ,  H01L29/66742 ,  H01L29/66803 ,  H01L29/785 ,  H01L29/78696

    摘要： A semiconductor device according to an embodiment includes: a polycrystalline semiconductor layer formed on an insulating film, the polycrystalline semiconductor layer including a first region and second and third regions each having a greater width than the first region, one of the second and third regions being connected to the first region; a gate insulating film formed at least on side faces of the first region of the polycrystalline semiconductor layer; a gate electrode formed on the gate insulating film; and gate sidewalls made of an insulating material, the gate sidewalls being formed on side faces of the gate electrode on sides of the second and third regions. Content of an impurity per unit volume in the first region is larger than content of the impurity per unit volume in the second and third regions.

    摘要翻译： 根据实施例的半导体器件包括：形成在绝缘膜上的多晶半导体层，所述多晶半导体层包括第一区域和第二和第三区域，所述第二区域和第三区域各自具有比所述第一区域更大的宽度，所述第二和第三区域中的一个是 连接到第一区域; 形成在所述多晶半导体层的所述第一区域的至少一侧面上的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; 以及由绝缘材料制成的栅极侧壁，所述栅极侧壁形成在所述第二和第三区域侧面上的所述栅电极的侧面上。 第一区域中每单位体积杂质的含量大于第二和第三区域中每单位体积杂质的含量。

    Non-volatile semiconductor storage device and method for manufacturing the same
    18.
    发明授权
    Non-volatile semiconductor storage device and method for manufacturing the same 有权
    非易失性半导体存储装置及其制造方法

    公开(公告)号：US08039887B2

    公开(公告)日：2011-10-18

    申请号：US12773967

    申请日：2010-05-05

    申请人： Masumi Saitoh ,  Ken Uchida

    发明人： Masumi Saitoh ,  Ken Uchida

    IPC分类号： H01L29/788

    CPC分类号： H01L29/42324 ,  H01L21/28273 ,  H01L29/165 ,  H01L29/7881

    摘要： A non-volatile semiconductor storage device includes: a semiconductor substrate; a source region and a drain region formed in the semiconductor substrate so as to be separated from each other; a first insulating film formed between the source region and the drain region, on the semiconductor substrate; a floating electrode formed on the first insulating film and including a semiconductor conductive material layer having extension strain; a second insulating film formed on the floating electrode; and a control electrode formed on the second insulating film. The extension strain of the floating electrode becomes gradually small as the location advances from the second insulating film toward the first insulating film, and the floating electrode has extension strain of 0.01% or more at an interface between the floating electrode and the second insulating film, and has extension strain less than 0.01% at an interface between the floating electrode and the first insulating film.

    摘要翻译： 非易失性半导体存储器件包括：半导体衬底; 源极区域和漏极区域，形成在半导体衬底中以便彼此分离; 在所述半导体衬底上形成在所述源极区域和所述漏极区域之间的第一绝缘膜; 形成在所述第一绝缘膜上并具有延伸应变的半导体导电材料层的浮动电极; 形成在浮置电极上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制电极。 浮动电极的延伸应变随着位置从第二绝缘膜向第一绝缘膜前进而逐渐变小，浮动电极在浮动电极和第二绝缘膜之间的界面具有0.01％以上的延伸应变， 并且在浮动电极和第一绝缘膜之间的界面处具有小于0.01％的延伸应变。