公开(公告)号：US20120068224A1

公开(公告)日：2012-03-22

申请号：US13267370

申请日：2011-10-06

Applicant: Naohiro NISHIKAWA ,  Tsuyoshi NAKANO ,  Takayuki INOUE

Inventor： Naohiro NISHIKAWA ,  Tsuyoshi NAKANO ,  Takayuki INOUE

IPC: H01L29/36 ,  H01L21/02 ,  H01L21/20

CPC classification number: H01L21/02395 ,  H01L21/0237 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/20 ,  H01L29/7371 ,  H01L29/7786 ,  H01L29/8605

Abstract: A method of producing a semiconductor wafer suited to form types of devices such as HBT and FET on a single semiconductor wafer is provided. The method, by repeating steps including introducing, into a reaction chamber for forming a semiconductor by crystal growth, a first-impurity gas containing an element or a compound containing a first impurity atom as a constituent, thereby producing semiconductor wafers, includes, after introducing the first-impurity gas: taking out a produced semiconductor wafer; disposing a first semiconductor in the reaction chamber; introducing, into the reaction chamber, a second-impurity gas containing an element or a compound containing, as a constituent, a second impurity atom exhibiting a conduction type opposite to the conduction type of the first impurity atom within the first semiconductor; heating the first semiconductor in an atmosphere of the second-impurity gas; and forming a second semiconductor on the heated first semiconductor by crystal growth.

Abstract translation: 提供了在单个半导体晶片上制造适合于形成诸如HBT和FET之类的器件的半导体晶片的方法。 该方法通过重复步骤，包括通过晶体生长将用于形成半导体的反应室引入包含元素或含有第一杂质原子的化合物作为组分的第一杂质气体，从而制备半导体晶片，其中引入 第一杂质气体：取出生产的半导体晶片; 在反应室中设置第一半导体; 向所述反应室中引入包含元素或化合物的第二杂质气体，所述元素或化合物含有与所述第一半导体内的所述第一杂质原子的导电类型相反的导电类型的第二杂质原子作为组分; 在第二杂质气体的气氛中加热第一半导体; 以及通过晶体生长在加热的第一半导体上形成第二半导体。

公开(公告)号：US20100309306A1

公开(公告)日：2010-12-09

申请号：US12857110

申请日：2010-08-16

Applicant: Shigeru UCHIYAMA ,  Takayuki INOUE ,  Masatoshi OKUGAWA ,  Jeremy COOKE

Inventor： Shigeru UCHIYAMA ,  Takayuki INOUE ,  Masatoshi OKUGAWA ,  Jeremy COOKE

IPC: H04N7/18

CPC classification number: G02B21/367

Abstract: In acquisition of a micro image of a sample S by a micro image acquiring unit 30, when a plurality of image acquiring ranges are set for the sample S as an object of image acquisition, a plurality of corresponding focus information are set, and furthermore, when a plurality of partial images acquired by scanning the sample S by the micro image acquiring unit 30 include a partial image including mixing of a plurality of image acquiring ranges, the focus information is switched in the middle of scanning of the partial image. With such a structure, even when a plurality of objects are contained in the sample S, images of the respective objects can be preferably acquired. Thereby, an image acquiring apparatus, an image acquiring method, and an image acquiring program which are capable of preferably acquiring images of a plurality of objects are realized even when the plurality of objects are contained in a sample S.

Abstract translation: 在通过微图像获取单元30获取样本S的微图像时，当为作为图像获取对象的样本S设置多个图像采集范围时，设置多个相应的焦点信息，此外， 当通过微图像获取单元30扫描样本S获取的多个部分图像包括包括多个图像获取范围的混合的部分图像时，在部分图像的扫描中间切换焦点信息。 通过这样的结构，即使在样本S中包含多个物体，也可以优选获得各个物体的图像。 因此，即使当多个对象被包含在样本S中时，也能够实现能够优选地获取多个对象的图像的图像获取装置，图像获取方法和图像获取程序。

公开(公告)号：US20120061663A1

公开(公告)日：2012-03-15

申请号：US13226713

申请日：2011-09-07

Applicant: Shunpei YAMAZAKI ,  Yusuke NONAKA ,  Takayuki INOUE ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Akiharu MIYANAGA

Inventor： Shunpei YAMAZAKI ,  Yusuke NONAKA ,  Takayuki INOUE ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Akiharu MIYANAGA

IPC: H01L29/12 ,  H01L21/34

CPC classification number: H01L29/7869 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/04 ,  H01L29/24 ,  H01L29/78603

Abstract: An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

Abstract translation: 本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。 通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（ 使用第一材料膜作为核的结晶氧化物半导体膜）。 作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。

公开(公告)号：US20110306985A1

公开(公告)日：2011-12-15

申请号：US12986848

申请日：2011-01-07

Applicant: Takayuki INOUE ,  Koichi KURAMOTO ,  Yoshio NAKASHIMA ,  Naohiko SUGITA ,  Mamoru MITSUISHI ,  Yoshikazu NAKASHIMA

Inventor： Takayuki INOUE ,  Koichi KURAMOTO ,  Yoshio NAKASHIMA ,  Naohiko SUGITA ,  Mamoru MITSUISHI ,  Yoshikazu NAKASHIMA

IPC: A61B19/00

CPC classification number: G06T19/003 ,  A61B34/20 ,  A61B34/30 ,  A61B2034/107 ,  G06T15/08 ,  G06T2210/41

Abstract: A surgical assistance system for operating on biological tissue using a surgical tool attached to an arm of an automatically-controlled surgical instrument so that an optimal feed rate of the tool is calculated and outputted to the surgical instrument, the system including: a device for storing and voxelizing medical image data obtained from a biological tissue subject to surgery; a device for setting an operative location based on the shape of the biological tissue; a device for calculating a tool path along which the tool travels to perform surgery at an operative location; a device for determining the region of interference between the tool and the voxels; a device for determining the hardness of the biological tissue in the interference region; a device for calculating an optimal tool feed rate corresponding to the hardness; and a device for outputting the feed rate obtained by the calculations to the surgical instrument.

Abstract translation: 一种外科辅助系统，用于使用附接到自动控制的手术器械的臂上的外科手术工具进行生物组织的操作，从而计算出所述工具的最佳进给速率并将其输出到所述手术器械，所述系统包括： 并且从进行手术的生物组织获得的医学图像数据的体素化; 用于基于生物组织的形状设置操作位置的装置; 用于计算工具行进的工具路径以在操作位置执行手术的装置; 用于确定所述工具与所述体素之间的干涉区域的装置; 用于确定干涉区域中生物组织的硬度的装置; 用于计算对应于硬度的最佳刀具进给速率的装置; 以及用于将通过计算获得的进给速率输出到外科器械的装置。

公开(公告)号：US20110039402A1

公开(公告)日：2011-02-17

申请号：US12848594

申请日：2010-08-02

Applicant: Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Yasuyuki ARAI ,  Takayuki INOUE ,  Erumu KIKUCHI

Inventor： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Yasuyuki ARAI ,  Takayuki INOUE ,  Erumu KIKUCHI

IPC: H01L21/20

CPC classification number: H01L21/02595 ,  C23C16/24 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

Abstract: A microcrystalline semiconductor film with high crystallinity is manufactured. In addition, a thin film transistor with excellent electric characteristics and high reliability, and a display device including the thin film transistor are manufactured with high productivity. A deposition gas containing silicon or germanium is introduced from an electrode including a plurality of projecting portions provided in a treatment chamber of a plasma CVD apparatus, glow discharge is caused by supplying high-frequency power, and thereby crystal particles are formed over a substrate, and a microcrystalline semiconductor film is formed over the crystal particles by a plasma CVD method.

Abstract translation: 制造具有高结晶度的微晶半导体膜。 此外，以高生产率制造具有优异的电特性和高可靠性的薄膜晶体管，以及包括薄膜晶体管的显示装置。 从设置在等离子体CVD装置的处理室中的多个突出部的电极引入含有硅或锗的沉积气体，通过供给高频电力而产生辉光放电，由此在基板上形成晶体粒子， 并且通过等离子体CVD法在晶体颗粒上形成微晶半导体膜。

公开(公告)号：US20140238924A1

公开(公告)日：2014-08-28

申请号：US14347525

申请日：2012-08-10

Applicant: Hideyuki NIIZATO ,  Takayuki INOUE ,  Kiyokazu MUKAI ,  Hitoshi MIMURA

Inventor： Hideyuki NIIZATO ,  Takayuki INOUE ,  Kiyokazu MUKAI ,  Hitoshi MIMURA

IPC: B01D24/46 ,  C02F1/00

CPC classification number: B01D24/4626 ,  B01D24/4621 ,  C02F1/004 ,  C02F2103/08 ,  C02F2201/008 ,  C02F2303/16 ,  E02B3/023 ,  E02F3/8866 ,  E03B3/04 ,  Y02W10/37

Abstract: To provide a cleaning apparatus suitable for removing clogging substances trapped in a surface layer of a sand filtration layer. A cleaning apparatus equipped with drive wheels serving as a driving device configured to move across a surface of a sand filtration layer. A pump and a jet nozzle are provided as an agitation device configured to agitate a surface layer portion of the sand filtration layer only at a desired depth, and which blows the clogging substances upward into the seawater in a turbid water intake pit together with a filtration sand. A perforated pipe for suctioning turbid water, a pump, an ejector, and a discharge pipe for dilute turbid water are provided as a suction and discharge device configured to suction turbid water blown upward into seawater in the water intake pit by the agitation device, and discharge it to outside of the turbid water intake pit. Prevents clogging by performing a timely cleaning of the sand filtration layer, thereby making it possible to maintain a high-speed seawater infiltration rate for seawater. Impact on the surrounding environment is reduced, because the apparatus suctions turbid water containing clogging substances which is blown upward into the turbid water intake pit, and discharges it to outside of the system.

Abstract translation: 提供一种适用于除去捕集在砂过滤层表层的堵塞物质的清洗装置。 一种配备有用作驱动装置的驱动轮的清洁装置，构造成移动穿过砂过滤层的表面。 提供泵和喷嘴作为搅拌装置，其仅在期望的深度搅拌砂过滤层的表层部分，并且将堵塞物质向上吹入混浊水进水口中的海水以及过滤 砂。 提供了一种用于吸入混浊水的多孔管，一个泵，一个喷射器和一个用于稀混浊水的排放管，作为吸入和排出装置，其被配置成通过搅拌装置吸入向上进入进水坑中的海水的混浊水， 将其排放到浑浊的进水口外面。 通过及时清洗砂过滤层，防止堵塞，可以保持海水的高速海水渗透率。 对周围环境的影响减小，因为装置吸入含有堵塞物质的混浊水，向上吹入混浊水进入坑，并将其排放到系统外部。

公开(公告)号：US20130012006A1

公开(公告)日：2013-01-10

申请号：US13618472

申请日：2012-09-14

Applicant: Shunpei YAMAZAKI ,  Takayuki INOUE ,  Erumu KIKUCHI ,  Hiroto INOUE

Inventor： Shunpei YAMAZAKI ,  Takayuki INOUE ,  Erumu KIKUCHI ,  Hiroto INOUE

IPC: H01L21/314 ,  H01L21/283 ,  H01L21/20

CPC classification number: H01J37/32449 ,  H01J37/3244 ,  H01J37/32541 ,  H01L29/66765

Abstract: A structure of the plasma treatment apparatus is employed in which an upper electrode has projected portions provided with first introduction holes and recessed portions provided with second introduction holes, the first introduction hole of the upper electrode is connected to a first cylinder filled with a gas which is not likely to be dissociated, the second introduction hole is connected to a second cylinder filled with a gas which is likely to be dissociated, the gas which is not likely to be dissociated is introduced into a reaction chamber from an introduction port of the first introduction hole provided on a surface of the projected portion of the upper electrode, and the gas which is likely to be dissociated is introduced into the reaction chamber from an introduction port of the second introduction hole provided on a surface of the recessed portion.

Abstract translation: 采用等离子体处理装置的结构，其中上电极具有设置有第一导入孔的突出部分和设置有第二导入孔的凹部，上电极的第一导入孔与填充有气体的第一圆筒连接， 不可能解离，第二引入孔连接到填充有可能解离的气体的第二气缸，不可能解离的气体从第一引入孔的引入口引入反应室 设置在上部电极的突出部分的表面上的引入孔和可能被解离的气体从设置在凹部的表面上的第二引入孔的引入口引入到反应室中。

公开(公告)号：US20120064664A1

公开(公告)日：2012-03-15

申请号：US13222513

申请日：2011-08-31

Applicant: Shunpei YAMAZAKI ,  Yusuke NONAKA ,  Takayuki INOUE ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Akiharu MIYANAGA

Inventor： Shunpei YAMAZAKI ,  Yusuke NONAKA ,  Takayuki INOUE ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Akiharu MIYANAGA

IPC: H01L21/44

CPC classification number: H01L29/78606 ,  H01L23/552 ,  H01L23/564 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An object is to manufacture a semiconductor device including an oxide semiconductor film, which has stable electric characteristics and high reliability. A crystalline oxide semiconductor film is formed, without performing a plurality of steps, as follows: by utilizing a difference in atomic weight of plural kinds of atoms included in an oxide semiconductor target, zinc with low atomic weight is preferentially deposited on an oxide insulating film to form a seed crystal including zinc; and tin, indium, or the like with high atomic weight is deposited on the seed crystal while causing crystal growth. Further, a crystalline oxide semiconductor film is formed by causing crystal growth using a seed crystal with a hexagonal crystal structure including zinc as a nucleus, whereby a single crystal oxide semiconductor film or a substantially single crystal oxide semiconductor film is formed.

Abstract translation: 本发明的目的是制造具有稳定的电特性和高可靠性的氧化物半导体膜的半导体装置。 通过利用包含在氧化物半导体靶中的多种原子的原子量的差异，形成结晶氧化物半导体膜，而不进行多个步骤，优选将低原子量的锌沉积在氧化物绝缘膜上 形成包含锌的晶种; 并且具有高原子量的锡，铟等沉积在晶种上同时引起晶体生长。 此外，通过使用具有包含锌作为核的六方晶系结构的晶种进行晶体生长来形成结晶氧化物半导体膜，从而形成单晶氧化物半导体膜或大致单晶氧化物半导体膜。

公开(公告)号：US20100258802A1

公开(公告)日：2010-10-14

申请号：US12754393

申请日：2010-04-05

Applicant: Hiromichi GODO ,  Takayuki INOUE

Inventor： Hiromichi GODO ,  Takayuki INOUE

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/7869 ,  H01L27/1225

Abstract: An object is to provide an n-channel transistor and a p-channel transistor having a preferred structure using an oxide semiconductor. A first source or drain electrode which is electrically connected to a first oxide semiconductor layer and is formed using a stacked-layer structure including a first conductive layer containing a first material and a second conductive layer containing a second material, and a second source or drain electrode which is electrically connected to a second oxide semiconductor layer and is formed using a stacked-layer structure including a third conductive layer containing the first material and a fourth conductive layer containing the second material are included. The first oxide semiconductor layer is in contact with the first conductive layer of the first source or drain electrode, and the second oxide semiconductor layer is in contact with the third and the fourth conductive layers of the second source or drain electrode.

Abstract translation: 目的是提供使用氧化物半导体的具有优选结构的n沟道晶体管和p沟道晶体管。 第一源极或漏极，其电连接到第一氧化物半导体层，并且使用包括包含第一材料的第一导电层和包含第二材料的第二导电层的堆叠层结构形成，以及第二源极或漏极 电连接到第二氧化物半导体层并且使用包括包含第一材料的第三导电层和包含第二材料的第四导电层的层叠结构形成的电极。 第一氧化物半导体层与第一源极或漏极的第一导电层接触，并且第二氧化物半导体层与第二源极或漏极的第三导电层和第四导电层接触。

公开(公告)号：US20200177747A1

公开(公告)日：2020-06-04

申请号：US16686312

申请日：2019-11-18

Applicant: Sayaka YASUDA ,  Shun YOSHIMI ,  Yutaka NAKAMURA ,  Takayuki INOUE ,  Motoyuki KATSUMATA ,  Kaori OZEKI

Inventor： Sayaka YASUDA ,  Shun YOSHIMI ,  Yutaka NAKAMURA ,  Takayuki INOUE ,  Motoyuki KATSUMATA ,  Kaori OZEKI

IPC: H04N1/00 ,  G10L15/22 ,  G10L15/26

Abstract: An information processing system includes circuitry configured to acquire audio information used for operating a target apparatus, recognize content of the acquired audio information as a recognition result, determine whether the recognition result includes a specific keyword, notify, using a display, pre-defined specific operation when the recognition result includes the specific keyword, and output the specific operation information to the target apparatus.