利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

102 条记录 (耗时 0.023 秒)

    Method of processing a surface of group III nitride crystal and group III nitride crystal substrate
    11.
    发明授权
    Method of processing a surface of group III nitride crystal and group III nitride crystal substrate 有权
    III族氮化物晶体和III族氮化物晶体衬底的表面处理方法

    公开(公告)号：US08338299B2

    公开(公告)日：2012-12-25

    申请号：US12795177

    申请日：2010-06-07

    申请人： Takayuki Nishiura ,  Keiji Ishibashi

    发明人： Takayuki Nishiura ,  Keiji Ishibashi

    IPC分类号： H01L21/302

    CPC分类号： H01L21/30625 ,  C09G1/02 ,  C30B29/403 ,  C30B33/00 ,  H01L21/02024 ,  H01L29/30

    摘要： There is provided a method of processing a surface of a group III nitride crystal, that includes the steps of: polishing a surface of a group III nitride crystal with a polishing slurry containing abrasive grains; and thereafter polishing the surface of the group III nitride crystal with a polishing liquid at least once, and each step of polishing with the polishing liquid employs a basic polishing liquid or an acidic polishing liquid as the polishing liquid. The step of polishing with the basic or acidic polishing liquid allows removal of impurity such as abrasive grains remaining on the surface of the group III nitride crystal after it is polished with the slurry containing the abrasive grains.

    摘要翻译： 提供一种处理III族氮化物晶体的表面的方法，其包括以下步骤：用含有磨粒的抛光浆料抛光III族氮化物晶体的表面; 然后用研磨液将III族氮化物晶体的表面抛光至少一次，并且用抛光液研磨的每个步骤都使用碱性研磨液或酸性研磨液作为研磨液。 用碱性或酸性抛光液抛光的步骤允许在含有磨料颗粒的浆料抛光后，去除残留在III族氮化物晶体表面上的杂质，例如磨粒。

    Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
    12.
    发明申请
    Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same 有权
    氮化物晶体，氮化物晶体衬底，含外延层的氮化物晶体衬底，半导体器件及其制造方法

    公开(公告)号：US20080272392A1

    公开(公告)日：2008-11-06

    申请号：US12216236

    申请日：2008-07-01

    申请人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

    发明人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

    IPC分类号： H01L33/00 ,  C01B21/00

    CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

    摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

    摘要翻译： 氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线 满足特定平行晶格面的衍射条件，在由d 1的值表示的晶体的表面层上的均匀的畸变-d 2/2 在0.3μm的X射线穿透深度处从平面间隔d 1> 1获得的平面间隔d <2>和在X射线处的平面间隔d 2 <2> 5μm的穿透深度等于或低于2.1×10 -3 -3。 上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底， 含氮化物晶体基板，半导体装置及其制造方法。

    Polishing agent, compound semiconductor manufacturing method, and semiconductor device manufacturing method
    15.
    发明授权
    Polishing agent, compound semiconductor manufacturing method, and semiconductor device manufacturing method 有权
    抛光剂，化合物半导体制造方法和半导体器件制造方法

    公开(公告)号：US08841215B2

    公开(公告)日：2014-09-23

    申请号：US13415859

    申请日：2012-03-09

    申请人： Keiji Ishibashi ,  Masashi Futamura ,  Takayuki Nishiura

    发明人： Keiji Ishibashi ,  Masashi Futamura ,  Takayuki Nishiura

    IPC分类号： H01L21/302 ,  C09G1/04 ,  H01L21/02

    CPC分类号： H01L21/02024 ,  C09G1/04

    摘要： Afforded are a polishing agent, and a compound semiconductor manufacturing method and semiconductor device manufacturing method utilizing the agent, whereby the surface quality of compound semiconductor substrates can be favorably maintained, and high polishing rates can be sustained as well. The polishing agent is a polishing agent for GaαIn(1-α)AsβP(1-β) (0≦α≦1; 0≦β≦1) compound semiconductors, and includes an alkali metal carbonate, an alkali metal organic salt, a chlorine-based oxidizer, and an alkali metal phosphate, wherein the sum of the concentrations of the alkali metal carbonate and the alkali metal organic salt is between 0.01 mol/L and 0.02 mol/L, inclusive. The compound semiconductor manufacturing method comprises a step of preparing a GaαIn(1-α)AsβP(1-β) (0≦α≦1; 0≦β≦1) compound semiconductor, and a step of polishing the face of the compound semiconductor utilizing an aforedescribed polishing agent.

    摘要翻译： 所使用的是抛光剂，以及利用该试剂的化合物半导体制造方法和半导体器件制造方法，由此可以有利地保持化合物半导体衬底的表面质量，并且还可以维持高的抛光速率。 抛光剂是用于GaαIn（1-α）As＆bgr; P（1-＆bgr;）（0＆nlE;α＆nlE; 1; 0＆nlE; bgr; nlE; 1）化合物半导体的抛光剂，包括碱金属碳酸盐，碱 金属有机盐，氯系氧化剂和碱金属磷酸盐，其中碱金属碳酸盐和碱金属有机盐的浓度之和为0.01mol / L至0.02mol / L。 化合物半导体制造方法包括制备化合物半导体的GaαIn（1-α）As＆bgr; P（1-＆bgr;）（0＆nlE;α＆nlE; 1; 0＆nlE; bgr; nlE; 1）化合物半导体的步骤， 使用上述抛光剂的化合物半导体的表面。

    METHOD OF PROCESSING A SURFACE OF GROUP III NITRIDE CRYSTAL AND GROUP III NITRIDE CRYSTAL SUBSTRATE
    17.
    发明申请
    METHOD OF PROCESSING A SURFACE OF GROUP III NITRIDE CRYSTAL AND GROUP III NITRIDE CRYSTAL SUBSTRATE 有权
    第III类氮化物晶体和III族氮化物晶体衬底的表面处理方法

    公开(公告)号：US20100248478A1

    公开(公告)日：2010-09-30

    申请号：US12795177

    申请日：2010-06-07

    申请人： Takayuki NISHIURA ,  Keiji Ishibashi

    发明人： Takayuki NISHIURA ,  Keiji Ishibashi

    IPC分类号： H01L21/306

    CPC分类号： H01L21/30625 ,  C09G1/02 ,  C30B29/403 ,  C30B33/00 ,  H01L21/02024 ,  H01L29/30

    摘要： There is provided a method of processing a surface of a group III nitride crystal, that includes the steps of: polishing a surface of a group III nitride crystal with a polishing slurry containing abrasive grains; and thereafter polishing the surface of the group III nitride crystal with a polishing liquid at least once, and each step of polishing with the polishing liquid employs a basic polishing liquid or an acidic polishing liquid as the polishing liquid. The step of polishing with the basic or acidic polishing liquid allows removal of impurity such as abrasive grains remaining on the surface of the group III nitride crystal after it is polished with the slurry containing the abrasive grains.

    摘要翻译： 提供一种处理III族氮化物晶体的表面的方法，其包括以下步骤：用含有磨粒的抛光浆料抛光III族氮化物晶体的表面; 然后用研磨液将III族氮化物晶体的表面抛光至少一次，并且用抛光液研磨的每个步骤都使用碱性研磨液或酸性研磨液作为研磨液。 用碱性或酸性抛光液抛光的步骤允许在含有磨料颗粒的浆料抛光后，去除残留在III族氮化物晶体表面上的杂质，例如磨粒。

    Polishing slurry, method of treating surface of GaxIn1-xASyP1-y crystal and GaxIn1-xASyP1-y crystal substrate
    19.
    发明申请
    Polishing slurry, method of treating surface of GaxIn1-xASyP1-y crystal and GaxIn1-xASyP1-y crystal substrate 失效
    研磨浆，GaxIn1-xAS​​yP1-y晶体表面处理方法及GaxIn1-xAS​​yP1-y晶体基板

    公开(公告)号：US20070075041A1

    公开(公告)日：2007-04-05

    申请号：US11527682

    申请日：2006-09-27

    申请人： Keiji Ishibashi ,  Takayuki Nishiura

    发明人： Keiji Ishibashi ,  Takayuki Nishiura

    IPC分类号： B24D3/02 ,  C09K13/00 ,  B44C1/22 ,  C09C1/68 ,  C09K3/14 ,  C23F1/00

    CPC分类号： H01L21/02024 ,  C09G1/02 ,  C09K3/1463 ,  H01L33/0095

    摘要： The present polishing slurry is a polishing slurry for chemically mechanically polishing a surface of a GaxIn1-xAsyP1-y crystal (0≦x≦1, 0≦y≦1), characterized in that this polishing slurry contains abrasive grains formed of SiO2, this abrasive grain is a secondary particle in which a primary particle is associated, and a ratio d2/d1 of an average particle diameter d2 of a secondary particle to an average particle diameter d1 of a primary particle is not less than 1.6 and not more than 10. According to such the polishing slurry, a crystal surface having a small surface roughness can be formed on a GaxIn1-xAsyP1-y crystal at a high polishing rate and effectively.

    摘要翻译： 本抛光浆料是用于化学机械抛光Ga x In 1-x N 1 O 1 P 1的表面的抛光浆料 -y 晶体（0 <= x <= 1,0 <= y <= 1），其特征在于该抛光浆料含有由SiO 2形成的磨料颗粒，该磨料颗粒为 初级粒子相关联的二次粒子和二次粒子的平均粒径d 2 N 2的比值d 2 / d 1/2 一次粒子的平均粒径d 1> 1以下的粒子为1.6以上10以下。根据这样的研磨浆料，能够形成表面粗糙度小的结晶面 在高抛光速率下并且有效地在1×x×1×1×1-y 晶体中。