公开(公告)号：US08829499B2

公开(公告)日：2014-09-09

申请号：US13465748

申请日：2012-05-07

申请人： Hideki Ono

发明人： Hideki Ono

IPC分类号： H01L29/417 ,  H01L51/00 ,  H01L51/10 ,  H01L51/05

CPC分类号： H01L51/0545 ,  H01L51/0018 ,  H01L51/105 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor element including an organic semiconductor layer and a layer disposed on the upper surface of the organic semiconductor layer, wherein the outline of the layer is inside the outline of the organic semiconductor layer.

摘要翻译： 一种半导体元件，包括有机半导体层和设置在有机半导体层的上表面上的层，其中该层的轮廓在有机半导体层的轮廓内。

公开(公告)号：US08557879B2

公开(公告)日：2013-10-15

申请号：US13580239

申请日：2011-01-06

申请人： Yoshiyuki Nagayasu ,  Kazuaki Hayasaka ,  Hideki Ono

发明人： Yoshiyuki Nagayasu ,  Kazuaki Hayasaka ,  Hideki Ono

IPC分类号： C07C27/00 ,  B01J20/34

CPC分类号： B01J35/023 ,  B01J21/066 ,  B01J21/08 ,  B01J23/75 ,  B01J23/8913 ,  B01J35/1061 ,  B01J37/009 ,  B01J37/0207 ,  B01J37/088 ,  B01J37/14 ,  B01J37/18 ,  B01J37/343 ,  C10G2/33 ,  C10G2300/4006 ,  C10G2300/703

摘要： A method for producing an activated Fischer-Tropsch synthesis catalyst comprising a hydrogen reduction step of subjecting a catalyst comprising 3 parts by mass to 50 parts by mass, as a metal atom, of a cobalt compound and/or a ruthenium compound, based on 100 parts by mass of a carrier containing a porous inorganic oxide, supported on the carrier, to reduction in a gas containing molecular hydrogen at a temperature of 300° C. to 600° C.; and a CO reduction step of subjecting the catalyst to reduction in a gas containing carbon monoxide and containing no molecular hydrogen at a temperature of 200° C. to 400° C.

摘要翻译： 一种活性费 - 托合成催化剂的制造方法，其特征在于，具有氢还原工序，该催化剂以钴化合物和/或钌化合物为基准，含有3质量份〜50质量份作为金属原子的催化剂， 在载体上承载含有多孔无机氧化物的载体的质量份，以在300℃至600℃的温度下还原含有分子氢的气体。 以及在200℃至400℃的温度下使催化剂还原含有一氧化碳并且不含分子氢的CO的还原步骤。

公开(公告)号：US08557725B2

公开(公告)日：2013-10-15

申请号：US13581948

申请日：2011-02-14

申请人： Hideki Ono ,  Yoshiyuki Nagayasu ,  Kazuaki Hayasaka

发明人： Hideki Ono ,  Yoshiyuki Nagayasu ,  Kazuaki Hayasaka

IPC分类号： B01J20/34 ,  C07C27/00

CPC分类号： B01J37/18 ,  B01J23/462 ,  B01J23/75 ,  B01J23/8913 ,  B01J23/94 ,  B01J23/96 ,  B01J35/1061 ,  B01J37/10 ,  B01J38/02 ,  B01J38/06 ,  B01J38/10 ,  C10G2/332 ,  C10G2/333

摘要： A method for producing a regenerated Fischer-Tropsch synthesis catalyst obtained by regenerating a spent catalyst used in a Fischer-Tropsch synthesis reaction, comprising a steaming step of bringing the above spent catalyst into contact with a mixed gas comprising 1 to 30% by volume of steam and an inert gas at a pressure of atmospheric pressure to 5 MPa and a temperature of 150 to 350° C., the above spent catalyst being a spent catalyst in which cobalt and/or ruthenium is supported on a carrier comprising silica with an average pore diameter measured by a nitrogen adsorption method of 4 to 25 nm, and of which activity represented by an initial carbon monoxide conversion is 40 to 95%, based on the activity of a corresponding unused catalyst.

摘要翻译： 一种生产通过再生费 - 托合成反应中使用的废催化剂而获得的再生费 - 托合成催化剂的方法，包括使上述废催化剂与含有1〜30体积％ 蒸汽和惰性气体，在大气压至5MPa的压力和150至350℃的温度下，上述废催化剂是废催化剂，其中钴和/或钌负载在包含二氧化硅的载体上，平均 基于相应的未使用的催化剂的活性，通过4〜25nm的氮吸附法测定的孔径，其初始一氧化碳转化率表示的活性为40〜95％。

公开(公告)号：US08445912B2

公开(公告)日：2013-05-21

申请号：US13028604

申请日：2011-02-16

申请人： Iwao Yagi ,  Hideki Ono ,  Mari Sasaki

发明人： Iwao Yagi ,  Hideki Ono ,  Mari Sasaki

IPC分类号： H01L29/10

CPC分类号： H01L29/66742 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/283 ,  H01L29/7869

摘要： A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap.

摘要翻译： 提供了容易制造的高性能薄膜晶体管结构。 薄膜晶体管结构包括：第一电极; 第二和第三电极以与第一电极的层级不同的层级彼此分开; 分别连接到第一，第二和第三电极的第一，第二和第三布线; 主堆叠体，设置成与第一电极相对，在第一电极和第二和第三电极之间具有层间绝缘层; 以及包括绝缘层和半导体层的子堆叠体，在第一和第二布线重叠的位置和/或第二布线之间，在第一布线和第二布线之间设置有与第一布线相对的第一布线和层间绝缘层， 或者在第一和第三布线重叠的位置之间的第一和第三布线之间。

公开(公告)号：US08081708B2

公开(公告)日：2011-12-20

申请号：US12258655

申请日：2008-10-27

申请人： Masaru Mitsuhashi ,  Hideki Ono

发明人： Masaru Mitsuhashi ,  Hideki Ono

IPC分类号： H04L27/00

CPC分类号： H04B7/0817

摘要： A reradiation apparatus for terrestrial digital broadcasting includes plural antennas provided on a train and mutually spaced along the running direction of the train, plural receiving processing parts provided corresponding to the antennas, a master selecting part which sets the receiving processing part corresponding to the antenna provided at the rear of the train as a master receiving processing part, a monitoring part which monitors a received state of the terrestrial digital broadcasting signal received by the master receiving processing part and outputs a supervisory signal, a switching part, and a reradiation unit. The switching part chooses the terrestrial digital broadcasting signal received by the master receiving processing part or the terrestrial digital broadcasting signal received by another receiving processing part based on the supervisory signal output by the monitoring part. The reradiation unit reradiates the chosen terrestrial digital broadcasting signal in the train.

摘要翻译： 一种用于地面数字广播的再发射装置，包括：列车上设置的多个天线，沿着列车的行驶方向相互间隔开的多个天线，与天线相对应的多个接收处理部，设置与所设置的天线相对应的接收处理部的主选择部 在作为主接收处理部分的列车的后部，监视部分监视由主接收处理部分接收到的地面数字广播信号的接收状态，并输出监控信号，切换部分和重新放射单元。 开关部根据由监视部输出的监视信号，选择由主接收处理部接收的地面数字广播信号或由其他接收处理部接收的地面数字广播信号。 雷达单元重新辐射列车中所选择的地面数字广播信号。

公开(公告)号：US07964173B2

公开(公告)日：2011-06-21

申请号：US12094222

申请日：2006-12-27

申请人： Takashi Oyama ,  Kazuhisa Nakanishi ,  Tamotsu Tano ,  Keiji Higashi ,  Ippei Fujinaga ,  Hiromitsu Hashisaka ,  Kiwamu Takeshita ,  Masaki Fujii ,  Hideki Ono

发明人： Takashi Oyama ,  Kazuhisa Nakanishi ,  Tamotsu Tano ,  Keiji Higashi ,  Ippei Fujinaga ,  Hiromitsu Hashisaka ,  Kiwamu Takeshita ,  Masaki Fujii ,  Hideki Ono

IPC分类号： C01B31/00 ,  C01B31/04 ,  C01B31/02 ,  C01D3/00 ,  C09C1/56 ,  H01G9/00 ,  C10L1/00 ,  C10C3/00 ,  C10G11/00 ,  C10G9/14 ,  H01B1/04 ,  H01B1/24 ,  C10B53/00 ,  C10B51/00

CPC分类号： H01G11/44 ,  C01B32/05 ,  C01B32/342 ,  C10B57/045 ,  H01G11/34 ,  Y02E60/13

摘要： The present invention provides feedstock compositions for use of the production of an activated carbon for electric double layer capacitor electrodes or the production of needle coke, comprising a first heavy oil with an initial boiling point of 300° C. or higher, an asphalten content of 12 percent by mass or less, a saturate content of 50 percent by mass or more and a sulfur content of 0.3 percent by mass or less, produced as a residue resulting from vacuum-distillation of a petroleum-based oil and a second heavy oil with an initial boiling point of 150° C. or higher and a sulfur content of 0.5 percent by mass or less, produced by subjecting a hydrocarbon oil to fluidized catalytic cracking.

摘要翻译： 本发明提供了用于生产双电层电容器电极的活性炭或生产针状焦的原料组合物，其包括初沸点为300℃或更高的第一重油，沥青含量为 12质量％以下，饱和物含量为50质量％以上，硫含量为0.3质量％以下，作为由石油系油和第二重油的真空蒸馏得到的残留物 初始沸点为150℃以上，硫含量为0.5质量％以下，通过使烃油进行流化催化裂化而得到。

公开(公告)号：US07959888B2

公开(公告)日：2011-06-14

申请号：US12158165

申请日：2006-12-27

申请人： Takashi Oyama ,  Kazuhisa Nakanishi ,  Tamotsu Tano ,  Keiji Higashi ,  Ippei Fujinaga ,  Hiromitsu Hashisaka ,  Toshitaka Fujii ,  Takashi Noro ,  Akio Sakamoto ,  Kiwamu Takeshita ,  Keizou Ikai ,  Masaki Fujii ,  Hideki Ono

发明人： Takashi Oyama ,  Kazuhisa Nakanishi ,  Tamotsu Tano ,  Keiji Higashi ,  Ippei Fujinaga ,  Hiromitsu Hashisaka ,  Toshitaka Fujii ,  Takashi Noro ,  Akio Sakamoto ,  Kiwamu Takeshita ,  Keizou Ikai ,  Masaki Fujii ,  Hideki Ono

IPC分类号： C01B31/00 ,  C01B31/04 ,  C01B31/02 ,  C01D3/00 ,  C09C1/56 ,  H01G9/00 ,  C10L1/00 ,  C10C3/00 ,  C10G11/00 ,  C10G9/14 ,  H01B1/04 ,  H01B1/24

CPC分类号： H01G11/44 ,  C01B32/05 ,  C01B32/30 ,  C10B57/045 ,  H01G11/34 ,  Y02E60/13

摘要： The present invention provides a raw coke having such a structure that the graphitized product resulting from graphitization of the raw coke at a temperature of 2800° C. under an inactive gas atmosphere will have ratios of the crystallite size to the lattice constant of 360 or less in the (002) plane and 1500 or less in the (110) plane, as a raw coke providing active carbon produced by alkali-activating the raw coke, which is reduced in remaining alkali content and can simplify washing operation because washing liquid can easily pass through the activated carbon, or as a raw coke for the production of needle coke.

摘要翻译： 本发明提供一种具有这样一种结构的原焦炭，即在惰性气体气氛下，在2800℃的温度下由原焦炭石墨化产生的石墨化产物将使微晶尺寸与晶格常数之比为360以下 在（002）面中，在（110）面中为1500以下的原料焦炭，作为提供通过碱活化生焦炭生成的活性炭的原焦炭，其还原了剩余的碱含量，并且可以简化洗涤操作，因为洗涤液容易 通过活性炭，或作为用于生产针状焦的原焦炭。

公开(公告)号：US20090253249A1

公开(公告)日：2009-10-08

申请号：US12379827

申请日：2009-03-03

申请人： Satoshi Taniguchi ,  Nobuhiro Suzuki ,  Hideki Ono

发明人： Satoshi Taniguchi ,  Nobuhiro Suzuki ,  Hideki Ono

IPC分类号： H01L21/20

CPC分类号： H01L29/205 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/30612 ,  H01L29/66318 ,  H01L33/0079 ,  H01L33/02

摘要： There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer.

摘要翻译： 提供一种制造半导体器件的方法，在其中形成有牺牲层的基于InP的器件的情况下，能够获得比使用AlAs单层作为 牺牲层，并且在蚀刻牺牲层期间不具有将牺牲层与器件层一起蚀刻的可能性。 一种制造半导体器件的方法包括：形成步骤，在InP衬底上形成与InP伪造的牺牲层，然后在牺牲层上形成基于InP的器件层; 以及通过蚀刻牺牲层将InP衬底和器件层彼此分离的分离步骤。

公开(公告)号：US07564676B2

公开(公告)日：2009-07-21

申请号：US10595409

申请日：2004-10-18

申请人： Eiji Kitajima ,  Yuichi Nakano ,  Kiwamu Takeshita ,  Keizo Ikai ,  Tatsuji Maruyama ,  Hideki Ono ,  Haruyoshi Mizuta

发明人： Eiji Kitajima ,  Yuichi Nakano ,  Kiwamu Takeshita ,  Keizo Ikai ,  Tatsuji Maruyama ,  Hideki Ono ,  Haruyoshi Mizuta

IPC分类号： H01G9/00

CPC分类号： H01G11/34 ,  C01B32/342 ,  H01G11/38 ,  H01G11/44 ,  H01M4/583 ,  Y02E60/13

摘要： A method for producing activated carbon for electrodes of electric double layer capacitors is disclosed which comprises an activation step wherein activated carbon is obtained by mixing an alkali metal hydroxide with a carbon raw material for the activated carbon and heating the mixture in an inert gas atmosphere, a deactivation removal step wherein the alkali metal in the activated carbon is deactivated and removed, and a heat treatment step wherein the activated carbon having gone through the deactivation removal step is heated in an inert gas atmosphere at a temperature higher than 400° C. but not higher than the heating temperature in the activation step. Also disclosed are activated carbon produced by such a method, activated carbon for electrodes of electric double layer capacitors wherein the alkali metal content is less than 100 mass ppm, activated carbon for electrodes of electric double layer capacitors having specific impedance characteristics, and activated carbon for electrodes of electric double layer capacitors having a specific amount of surface functional groups and a specific amount of surface carboxyl groups. In an electric double layer capacitor comprising a pair of electrodes and an electrolyte solution, at least one of the electrodes contains such an activated carbon.

摘要翻译： 公开了一种双电层电容器的电极用活性炭的制造方法，其特征在于，具有活性炭，其中活性炭是通过将碱金属氢氧化物与活性炭的碳原料混合并在惰性气体气氛中加热， 其中活性炭中的碱金属被去活和去除的去活化步骤，以及其中通过去活化步骤的活性炭在惰性气体气氛中在高于400℃的温度下加热的热处理步骤，但是 不高于活化步骤中的加热温度。 还公开了通过这种方法生产的活性炭，其中碱金属含量小于100质量ppm的双电层电容器的电极活性炭，具有特定阻抗特性的双电层电容器的电极用活性炭，以及用于 具有特定量的表面官能团和特定量的表面羧基的双电层电容器的电极。 在包括一对电极和电解质溶液的双电层电容器中，至少一个电极含有这种活性炭。

公开(公告)号：US07244973B2

公开(公告)日：2007-07-17

申请号：US11038255

申请日：2005-01-21

申请人： Satoshi Taniguchi ,  Toshikazu Suzuki ,  Hideki Ono ,  Jun Araseki

发明人： Satoshi Taniguchi ,  Toshikazu Suzuki ,  Hideki Ono ,  Jun Araseki

IPC分类号： H01L29/778

CPC分类号： H01L29/66462 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

摘要： A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1−x−yN, wherein x+y=1, 0≦x≦1, and 0≦y≦1; and forming a source electrode and a drain electrode by self-alignment using the gate electrode as a mask. A field-effect semiconductor device fabricated by the method is also disclosed.