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    Substrate processing apparatus
    13.
    发明授权
    Substrate processing apparatus 有权

    公开(公告)号：US10593571B2

    公开(公告)日：2020-03-17

    申请号：US15467001

    申请日：2017-03-23

    Applicant: Tokyo Electron Limited

    Inventor： Hiroaki Inadomi ,  Tooru Nakamura ,  Kouji Kimoto ,  Yasuo Kiyohara ,  Satoshi Okamura ,  Satoshi Biwa ,  Nobuya Yamamoto ,  Katsuhiro Ookawa ,  Keiichi Yahata ,  Tetsuro Nakahara

    IPC: H01L21/67 ,  B08B3/02 ,  B08B3/08 ,  B08B3/10

    Abstract: Provided is a substrate processing apparatus including a liquid processing unit that performs a liquid processing on a substrate; a drying processing unit that performs a drying processing on the substrate in a wet state; a first conveyance unit that conveys the substrate to the liquid processing unit; a second conveyance unit that conveys the substrate in the wet state from the liquid processing unit to the drying processing unit; and a third conveyance unit that conveys the substrate before the liquid processing in the liquid processing unit and to convey the substrate after the drying processing from the drying processing unit. The first and second conveyance units and the drying processing unit are disposed on a side that faces the third conveyance unit, and the liquid processing unit is disposed on a side that faces the first and second conveyance units and is opposite to the third conveyance unit.

    Substrate processing apparatus and substrate processing method
    14.
    发明授权
    Substrate processing apparatus and substrate processing method 有权

    公开(公告)号：US12057326B2

    公开(公告)日：2024-08-06

    申请号：US17389883

    申请日：2021-07-30

    Applicant: Tokyo Electron Limited

    Inventor： Shota Umezaki ,  Hiroaki Inadomi

    IPC: H01L21/67 ,  H01L21/673 ,  H01L21/677 ,  H01L21/02

    CPC classification number: H01L21/67034 ,  H01L21/67126 ,  H01L21/67383 ,  H01L21/67748 ,  H01L21/02101

    Abstract: A substrate processing apparatus includes a transfer block in which a transfer device configured to transfer a substrate is placed, and a processing block provided adjacent to the transfer block. The processing block includes a liquid film forming unit configured to form a liquid film on a top surface of the substrate which is held horizontally, and a drying unit configured to replace the liquid film with a supercritical fluid to dry the substrate. The drying unit includes a pressure vessel having therein a drying chamber for the substrate, a cover body configured to close an opening of the drying chamber, and a supporting body configured to support the substrate horizontally in the drying chamber. The supporting body is fixed to the drying chamber. The transfer device advances into the drying chamber through the opening of the drying chamber while holding horizontally the substrate having the liquid film thereon.

    HIGH-PRESSURE CONTAINER, SUBSTRATE PROCESSING APPARATUS, AND METHOD FOR MANUFACTURING HIGH-PRESSURE CONTAINER
    17.
    发明申请
    HIGH-PRESSURE CONTAINER, SUBSTRATE PROCESSING APPARATUS, AND METHOD FOR MANUFACTURING HIGH-PRESSURE CONTAINER 审中-公开
    高压容器，基板加工装置及制造高压容器的方法

    公开(公告)号：US20140145390A1

    公开(公告)日：2014-05-29

    申请号：US14086146

    申请日：2013-11-21

    Applicant: Tokyo Electron Limited

    Inventor： Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii ,  Takayuki Toshima ,  Hiroaki Inadomi

    IPC: B23Q3/18 ,  B23H7/08

    CPC classification number: B23H7/02 ,  B23H1/00 ,  B23H9/006 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67772

    Abstract: In the present disclosure, the high-pressure chamber includes a chamber main body including a flat rectangular parallelepiped block of a metal which is formed with a flat cavity that serves as a substrate processing space in which a processing using a high-pressure fluid is performed on a substrate, and the substrate processing space being formed by machining the block from one of faces of the block other than the widest face towards another face opposing thereto. In a case where the cavity is constituted as a through hole, the though hole is provided with a cover configured to open or close the cavity on one side of the through hole, and a second block configured to air-tightly seal the cavity on the other side.

    Abstract translation: 在本公开内容中，高压室包括室主体，其包括金属扁平的长方体块，其形成有用于进行使用高压流体的处理的基板处理空间的平坦空腔 并且基板处理空间通过从块的除了最宽面之外的一个面朝向与其相对的另一面的一个面加工而形成。 在空洞构成为通孔的情况下，通孔设置有盖，其构造成在通孔的一侧上打开或关闭空腔，并且构造成将空腔气密地密封在通孔上 另一边。

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
    18.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 有权
    基板处理装置和基板处理方法

    公开(公告)号：US20130327363A1

    公开(公告)日：2013-12-12

    申请号：US13906546

    申请日：2013-05-31

    Applicant: Tokyo Electron Limited

    Inventor： Hiroaki Inadomi

    IPC: H01L21/67

    CPC classification number: H01L21/67034 ,  B08B7/0021 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/67075 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/67748 ,  H01L21/67751

    Abstract: A substrate processing apparatus is provided including: a liquid processing unit that processes a substrate with a processing liquid; a carry-in port formed in the liquid processing unit and configured to carry-in the substrate in a dry-state before the substrate is processed with the processing liquid; a carry-out port formed in the liquid processing unit and configured to carry-out the substrate in a wet-state after completing the liquid processing; a supercritical dry processing unit that performs a dry processing for the substrate using a supercritical fluid; a first substrate transport unit that transports the substrate in a dry-state before the substrate is processed with the processing liquid to the carry-out port of the liquid processing unit; and a second substrate transport unit that transports the substrate in a wet-state after completing the liquid processing from the carry-out port of the liquid processing unit to the supercritical dry processing unit.

    Abstract translation: 提供了一种基板处理装置，包括：处理液体处理基板的液体处理单元; 形成在所述液体处理单元中并构造成在用所述处理液处理所述基板之前以干态运送所述基板的携带口; 形成在所述液体处理单元中并构造成在完成所述液体处理之后在湿态下执行所述基板的进出口; 超临界干燥处理单元，其使用超临界流体对所述基板进行干法处理; 第一基板输送单元，其在基板被处理之前以干燥状态将基板输送到液体处理单元的进出口; 以及第二基板输送单元，其在从液体处理单元的进出口向超临界干燥处理单元完成液体处理之后将湿气状态的基板输送。

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
    20.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 有权

    公开(公告)号：US20220208567A1

    公开(公告)日：2022-06-30

    申请号：US17645779

    申请日：2021-12-23

    Applicant: Tokyo Electron Limited

    Inventor： Mikio Nakashima ,  Shota Umezaki ,  Hiroaki Inadomi

    IPC: H01L21/67 ,  H01L21/02

    Abstract: A substrate processing apparatus includes a processing vessel; and a processing fluid supply configured to supply a processing fluid in a supercritical state into the processing vessel. The processing fluid supply includes a fluid supply line; a cooling device provided in the fluid supply line, and configured to cool the processing fluid in a gas state to produce the processing fluid in a liquid state; a pump positioned downstream of the cooling device; a heating device positioned downstream of the pump, and configured to heat the processing fluid in the liquid state to generate the processing fluid in the supercritical state; a first flow rate adjuster positioned between the pump and the heating device, and configured to adjust a supply flow rate of the processing fluid supplied to the processing vessel; and a controller configured to control the first flow rate adjuster.

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