公开(公告)号：US20190237305A1

公开(公告)日：2019-08-01

申请号：US16257205

申请日：2019-01-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroshi TSUJIMOTO ,  Toshikatsu TOBANA

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32541 ,  H01J37/32027 ,  H01J37/32577 ,  H01L21/6833

Abstract: In a method for applying a DC voltage to an electrode of a plasma processing apparatus, plasma of a gas is generated in an inner space of a chamber and an absolute value of a negative DC voltage applied from a DC power supply to the electrode that forms a part of the chamber or is provided in the inner space during the generation of the plasma is increased. A first voltage value is specified, the first voltage value being a voltage value measured at the electrode when a current starts to flow in the electrode during the increase of the absolute value of the negative DC voltage. A value of the DC voltage applied from the DC power supply to the electrode during the generation of the plasma is set to a second voltage value that is a sum of the first voltage value and a specified value.

公开(公告)号：US20160079074A1

公开(公告)日：2016-03-17

申请号：US14785392

申请日：2014-05-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Keigo TOYODA ,  Masaru ISAGO ,  Hiroshi TSUJIMOTO

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32 ,  H01L21/66

CPC classification number: H01L21/3065 ,  H01J37/32522 ,  H01J37/32642 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67248 ,  H01L21/6831 ,  H01L22/26

Abstract: An etching method for performing a plasma etching on an object to be processed by using a supplied gas is provided. In the etching method, a temperature of a focus ring is adjusted by using a first temperature adjustment mechanism controllable independently of a temperature control of the object to be processed while measuring a time variation until the temperature of the focus ring reaches a target value. A degree of consumption of the focus ring is estimated from the measured time variation based on a preliminarily set correlation between the time variation and the degree of consumption of the focus ring. The target value of the temperature of the focus ring is corrected based on the estimated degree of consumption of the focus ring.

Abstract translation: 提供了一种用于通过使用供应气体对待处理物体进行等离子体蚀刻的蚀刻方法。 在蚀刻方法中，通过使用可独立于待处理物体的温度控制控制的第一温度调节机构来调节聚焦环的温度，同时测量直到聚焦环的温度达到目标值的时间变化。 基于时间变化与聚焦环的消耗程度之间的预先设定的相关性，从所测量的时间变化估计聚焦环的消耗程度。 基于估计的聚焦环的消耗程度来校正聚焦环的温度的目标值。

公开(公告)号：US20150380282A1

公开(公告)日：2015-12-31

申请号：US14751655

申请日：2015-06-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takao FUNAKUBO ,  Hirofumi HAGA ,  Shinichi KOZUKA ,  Wataru OZAWA ,  Akihiro SAKAMOTO ,  Naoki TANIGUCHI ,  Hiroshi TSUJIMOTO ,  Kumiko ONO

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32174 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/3299

Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.

Abstract translation: 本文公开的控制器在第一步骤中以第一能量条件驱动高频发生源，并且在第二步骤中驱动处于第二能量条件的高频发生源。 在第一步骤和第二步骤的切换时间之前，控制器将从气体供应系统供应的气体物质切换到处理容器中，并将切换后的初始阶段的气体流量设置为大于气体 经过初期的稳定期间的流量。

公开(公告)号：US20250166975A1

公开(公告)日：2025-05-22

申请号：US19032746

申请日：2025-01-21

Applicant: Tokyo Electron Limited

Inventor： Lifu LI ,  Junya KURAMOTO ,  Takashi ARAMAKI ,  Hiroshi TSUJIMOTO

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a processing chamber having a substrate support configured to support a substrate, a gas supply configured to supply a plurality of processing gases to the processing chamber, a plasma generator configured to generate plasma of the processing gases, and a controller configured to control the gas supply. The gas supply includes a first gas supply configured to supply a first processing gas to the processing chamber, and a second gas supply configured to inject a second processing gas to the first processing gas supplied to the processing chamber.

公开(公告)号：US20210305022A1

公开(公告)日：2021-09-30

申请号：US17195728

申请日：2021-03-09

Applicant: Tokyo Electron Limited

Inventor： Hiroshi TSUJIMOTO ,  Yusei KUWABARA ,  Lifu LI

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/67 ,  H01L21/683

Abstract: A substrate support includes a substrate support surface on which a substrate is placed, a ring support surface on which an edge ring is placed to surround the substrate placed on the substrate support surface, and an electrode configured to attract and hold the edge ring on the ring support surface by an electrostatic force. A heat transfer sheet is attached to a surface of the edge ring facing the ring support surface, and the edge ring is placed on the ring support surface via the heat transfer sheet. A conductive film is formed on a surface of the heat transfer sheet facing the ring support surface. Further, the edge ring is held on the ring support surface by attracting and holding the conductive film of the heat transfer sheet attached to the edge ring onto the ring support surface by the electrostatic force generated by the electrode.

公开(公告)号：US20160372308A1

公开(公告)日：2016-12-22

申请号：US15180672

申请日：2016-06-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiraku MURAKAMI ,  Nobutaka SASAKI ,  Shigeru SENZAKI ,  Takanori BANSE ,  Hiroshi TSUJIMOTO ,  Keigo TOYODA

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32477 ,  H01J37/32504

Abstract: Disclosed is a plasma processing method. The method includes forming a protective film on an inner wall surface of a processing container of a plasma processing apparatus; and executing a processing on a workpiece within the processing container. When forming the protective film, a protective film forming gas is supplied from an upper side of the space between the mounting table and the side wall of the processing container so that plasma is generated. When executing the processing, a workpiece processing gas is supplied from an upper side of the mounting table so that plasma is generated.

Abstract translation: 公开了一种等离子体处理方法。 该方法包括在等离子体处理装置的处理容器的内壁表面上形成保护膜; 对处理容器内的工件进行处理。 当形成保护膜时，从安装台和处理容器的侧壁之间的空间的上侧供应保护膜形成气体，从而产生等离子体。 当执行处理时，从安装台的上侧供给工件处理气体，从而产生等离子体。

公开(公告)号：US20160056021A1

公开(公告)日：2016-02-25

申请号：US14784210

申请日：2014-05-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroshi TSUJIMOTO ,  Tomoyuki MIZUTANI

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01J37/32449 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67069

Abstract: A plasma etching apparatus of the present disclosure etches a substrate by plasma of a processing gas. The plasma etching apparatus includes a processing container; a holding unit configured to hold a substrate; and an electrode plate. The plasma etching apparatus further includes configured to supply the processing gas to a space between the holding unit and the electrode plate and disposed in n (n is a natural number of two or more) regions of the substrate divided concentrically in a radial direction, respectively. In addition, the plasma etching apparatus further includes a high frequency power source configured to supply a high frequency power to at least one of the holding unit and the electrode plate so as to generate plasma. The plasma etching apparatus controls a flow rate of the processing gas.

Abstract translation: 本发明的等离子体蚀刻装置通过处理气体的等离子体蚀刻衬底。 等离子体蚀刻装置包括处理容器; 保持单元，其构造成保持基板; 和电极板。 等离子体蚀刻装置还包括：将处理气体供给到保持单元和电极板之间的空间，并且分别设置在径向方向上同心地划分的基板的n（n为2个以上的自然数）区域中 。 此外，等离子体蚀刻装置还包括被配置为向保持单元和电极板中的至少一个提供高频功率以产生等离子体的高频电源。 等离子体蚀刻装置控制处理气体的流量。

公开(公告)号：US20150228460A1

公开(公告)日：2015-08-13

申请号：US14614900

申请日：2015-02-05

Applicant: Tokyo Electron Limited

Inventor： Tomoyuki MIZUTANI ,  Hiroshi TSUJIMOTO

IPC: H01J37/32 ,  H01L21/285 ,  H01L21/67 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01J37/32449 ,  C23C14/54 ,  C23C16/45523 ,  H01J37/3244 ,  H01L21/31138 ,  H01L21/67109 ,  H01L21/67253 ,  Y10T137/0324

Abstract: A gas supplying method of supplying a process gas containing a gas of at least one gaseous species into a process space in a semiconductor manufacturing apparatus includes supplying the process gas by controlling a flow rate value of the gas to be a first value during a first period; supplying the process gas by controlling the flow rate value of the gas to be a second value smaller than the first value during a second period; supplying the process gas by controlling the flow rate value of the gas to be a third value greater than the first value during a third period; and supplying the process gas by controlling the flow rate value of the gas to be a fourth value smaller than the second value during a fourth period, wherein these steps are periodically repeated in a predetermined order.

Abstract translation: 在半导体制造装置中，将含有至少一种气体的气体的处理气体供给到处理空间的气体供给方法包括：在第一期间，将气体的流量值控制为第一值， ; 通过在第二时段期间将所述气体的流量值控制为小于所述第一值的第二值来供给所述处理气体; 通过在第三时段期间将所述气体的流量值控制为大于所述第一值的第三值来供给所述处理气体; 以及通过在第四周期期间将气体的流量值控制为小于第二值的第四值来供给处理气体，其中这些步骤以预定顺序周期性地重复。

公开(公告)号：US20220403518A1

公开(公告)日：2022-12-22

申请号：US17845354

申请日：2022-06-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hisashi HIROSE ,  Hiroshi TSUJIMOTO ,  Tomoya UJIIE

IPC: C23C16/455 ,  H01J37/32

Abstract: There is a shower head through which a processing gas is supplied into an inside of a processing chamber, comprising: a cooling plate having a gas diffusion chamber, and a plurality of first through holes passing through from the gas diffusion chamber to a first surface on a processing chamber side; an upper electrode having a second surface in contact with the first surface of the cooling plate, a third surface configured to form an inner surface of the processing chamber, and a plurality of second through holes passing through from the second surface to the third surface; and a plurality of recesses formed in the first surface or the second surface and provided apart from each other, wherein one of the plurality of first through holes is connected to at least two of the plurality of second through holes via one of the plurality of recesses.

公开(公告)号：US20220319815A1

公开(公告)日：2022-10-06

申请号：US17708600

申请日：2022-03-30

Applicant: Tokyo Electron Limited

Inventor： Lifu LI ,  Takaki KOBUNE ,  Hiroshi TSUJIMOTO

IPC: H01J37/32

Abstract: An upper electrode assembly used in a plasma processing apparatus is provided. The upper electrode assembly comprises: an electrode plate; a metal plate; and a heat transfer sheet disposed between the electrode plate and the metal plate and having a vertically oriented portion. The vertically oriented portion has a plurality of vertically oriented graphene structures oriented along a vertical direction.