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公开(公告)号：US10049860B2
公开(公告)日：2018-08-14
申请号：US14412258
申请日：2013-04-30
Applicant: Tokyo Electron Limited
Inventor： Atsushi Gomi , Tetsuya Miyashita , Shinji Furukawa , Koji Maeda , Masamichi Hara , Naoyuki Suzuki , Hiroshi Miki , Toshiharu Hirata
Abstract: An apparatus includes a row of substrate transfer devices 3 which can deliver a wafer W within a transfer chamber; and rows of process modules PM, arranged at right and left sides of the row of the substrate transfer devices along the row, configured to perform processes to the wafer W. The rows of the process modules PM are arranged such that each of the processes can be performed by at least two process modules PM. Thus, when a single process module PM cannot be used, the wafer W can be rapidly transferred to another process module PM which can perform the same process as performed in the corresponding process module. Therefore, even when the single process module PM cannot be used, the processes can be continued to the wafers W without stopping an operation of the apparatus, so that the number of wasted wafers W can be reduced.
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公开(公告)号：US20150235815A1
公开(公告)日：2015-08-20
申请号：US14412258
申请日：2013-04-30
Applicant: Tokyo Electron Limited
Inventor： Atsushi Gomi , Tetsuya Miyashita , Shinji Furukawa , Koji Maeda , Masamichi Hara , Naoyuki Suzuki , Hiroshi Miki , Toshiharu Hirata
IPC: H01J37/32
CPC classification number: H01J37/32733 , C23C14/568 , H01L21/67161 , H01L21/67173 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67745 , H01L43/12
Abstract: An apparatus includes a row of substrate transfer devices 3 which can deliver a wafer W within a transfer chamber; and rows of process modules PM, arranged at right and left sides of the row of the substrate transfer devices along the row, configured to perform processes to the wafer W. The rows of the process modules PM are arranged such that each of the processes can be performed by at least two process modules PM. Thus, when a single process module PM cannot be used, the wafer W can be rapidly transferred to another process module PM which can perform the same process as performed in the corresponding process module. Therefore, even when the single process module PM cannot be used, the processes can be continued to the wafers W without stopping an operation of the apparatus, so that the number of wasted wafers W can be reduced.
Abstract translation: 一种装置包括一排衬底传送装置3，其可在传送室内传送晶片W; 以及沿着行布置在基板传送装置的行的左右两侧的处理模块PM的行，被配置为对晶片W执行处理。处理模块PM的行被布置成使得每个处理可以 由至少两个处理模块PM执行。 因此，当不能使用单个处理模块PM时，可以将晶片W快速转移到可以执行与在相应的处理模块中执行的相同处理的另一个处理模块PM。 因此，即使不能使用单个处理模块PM，也可以在不停止设备的操作的情况下继续进行晶片W的处理，从而可以减少浪费的晶片W的数量。
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公开(公告)号：US12261078B2
公开(公告)日：2025-03-25
申请号：US17657962
申请日：2022-04-05
Applicant: Tokyo Electron Limited
Inventor： Takuya Umise , Masato Shinada , Tetsuya Miyashita
IPC: H01L21/68 , H01L21/687
Abstract: A processing method for processing a substrate includes: a first arrangement step of mounting, on a stage provided in a processing container to mount the substrate on the stage, a plate-shaped protective member which is prepared in advance at a location in the processing container different from a location on the stage and which is configured to protect an upper surface of the stage; an adjustment step of adjusting a distance between the stage and an annular cover member provided above an edge portion of the stage to a second distance different from a first distance between the stage and the cover member when the substrate is processed; and a pretreatment step of performing a pretreatment in the processing container to change a state in the processing container to a predetermined state, wherein the protective member has a thickness different from a thickness of the substrate.
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公开(公告)号：US12211720B2
公开(公告)日：2025-01-28
申请号：US17381813
申请日：2021-07-21
Applicant: Tokyo Electron Limited
Inventor： Tatsuo Hatano , Naoki Watanabe , Tetsuya Miyashita
IPC: H01L21/677 , H01L21/67 , H01L21/683
Abstract: A vacuum transfer device configured to transfer a substrate in a vacuum includes: a flat motor including a body, a plurality of electromagnetic coils arrayed in the body, and a current controller that controls a current supplied to the electromagnetic coil; a transfer unit including a substrate holder configured to hold a substrate, and a base having a plurality of magnets arrayed therein and magnetically levitating from a surface of the body by a magnetic field generated by the electromagnetic coil, and move in a magnetically levitating state thereby moving the substrate holder; and a temperature controller configured to adjust temperature of at least a portion of the body. The temperature of the transfer unit is adjusted by stopping the magnetic levitation of the base by controlling the current supplied to the electromagnetic coil, and bringing the base into contact with a temperature-adjusted portion of the body.
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公开(公告)号：US20220081757A1
公开(公告)日：2022-03-17
申请号：US17469250
申请日：2021-09-08
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masato Shinada , Naoki Watanabe , Tetsuya Miyashita , Hiroyuki Toshima , Einstein Noel Abarra , Shota Ishibashi
Abstract: A film forming apparatus is provided. The apparatus comprises a processing chamber accommodating a plurality of substrates; a plurality of substrate supporting units disposed in the processing chamber and configured to place the substrates thereon; a substrate moving mechanism configured to linearly move the substrate supporting units in a first direction; sputter particle emitting units, each having a target for emitting sputter particles into the processing chamber; and a controller configured to control the sputter particle emitting units and the substrate moving mechanism. The controller controls the substrate moving mechanism to linearly move the substrate supporting units on which the substrates are placed in the first direction and controls the sputter particle emitting units to emit sputter particles to be deposited on the substrates.
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Patent Agency Ranking
公开(公告)号：US10468237B2
公开(公告)日：2019-11-05
申请号：US16029847
申请日：2018-07-09
Applicant: Tokyo Electron Limited
Inventor： Atsushi Gomi , Tetsuya Miyashita , Shinji Furukawa , Koji Maeda , Masamichi Hara , Naoyuki Suzuki , Hiroshi Miki , Toshiharu Hirata
IPC: H01J37/32 , C23C14/56 , H01L21/67 , H01L21/677 , H01L43/12
Abstract: An apparatus includes a row of substrate transfer devices 3 which can deliver a wafer W within a transfer chamber; and rows of process modules PM, arranged at right and left sides of the row of the substrate transfer devices along the row, configured to perform processes to the wafer W. The rows of the process modules PM are arranged such that each of the processes can be performed by at least two process modules PM. Thus, when a single process module PM cannot be used, the wafer W can be rapidly transferred to another process module PM which can perform the same process as performed in the corresponding process module. Therefore, even when the single process module PM cannot be used, the processes can be continued to the wafers W without stopping an operation of the apparatus, so that the number of wasted wafers W can be reduced.
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公开(公告)号：US20180315585A1
公开(公告)日：2018-11-01
申请号：US16029847
申请日：2018-07-09
Applicant: Tokyo Electron Limited
Inventor： Atsushi Gomi , Tetsuya Miyashita , Shinji Furukawa , Koji Maeda , Masamichi Hara , Naoyuki Suzuki , Hiroshi Miki , Toshiharu Hirata
CPC classification number: H01J37/32733 , C23C14/566 , C23C14/568 , H01J37/32899 , H01L21/67161 , H01L21/67173 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67745 , H01L43/12
Abstract: An apparatus includes a row of substrate transfer devices 3 which can deliver a wafer W within a transfer chamber; and rows of process modules PM, arranged at right and left sides of the row of the substrate transfer devices along the row, configured to perform processes to the wafer W. The rows of the process modules PM are arranged such that each of the processes can be performed by at least two process modules PM. Thus, when a single process module PM cannot be used, the wafer W can be rapidly transferred to another process module PM which can perform the same process as performed in the corresponding process module. Therefore, even when the single process module PM cannot be used, the processes can be continued to the wafers W without stopping an operation of the apparatus, so that the number of wasted wafers W can be reduced.
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公开(公告)号：US10014145B2
公开(公告)日：2018-07-03
申请号：US15595290
申请日：2017-05-15
Applicant: TOKYO ELECTRON LIMITED
Inventor： Tomohiro Saito , Tadashi Mitsunaga , Kouji Maeda , Tetsuya Miyashita
CPC classification number: H01J11/52 , H01J11/20 , H01J11/46 , H01J21/02 , H01J21/18 , H01J37/32724 , H01J37/32816 , H01J37/32834 , H01J41/12 , H01J41/16
Abstract: A vacuum exhaust method is for decreasing a pressure in a processing chamber in which a mounting table configured to mount thereon a substrate is provided by using a gas exhaust unit. The vacuum exhaust method includes mounting a non-evaporated getter (NEG) on the mounting table, and adsorbing an active gas in the processing chamber on the NEG mounted on the mounting table. In the adsorbing the active gas, the NEG is maintained at a predetermined temperature.
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公开(公告)号：US09790590B2
公开(公告)日：2017-10-17
申请号：US14403833
申请日：2013-04-30
Applicant: TOKYO ELECTRON LIMITED
Inventor： Shinji Furukawa , Atsushi Gomi , Tetsuya Miyashita , Toru Kitada , Kanto Nakamura
CPC classification number: C23C14/5853 , C23C14/08 , C23C14/14 , C23C14/3464 , C23C14/352 , C23C14/564 , H01J37/34 , H01J37/3405 , H01J37/3426 , H01J37/3429 , H01J37/3447 , H01J2237/3322 , H01L43/12
Abstract: The present disclosure provides a vacuum-processing apparatus for forming a metal film on a substrate by sputtering targets with ions of plasma, and then oxidizing the metal film, the apparatus including: a first target composed of a material having a property of adsorbing oxygen; a second target composed of a metal; a power supply unit configured to apply a voltage to the targets; a shutter configured to prevent particles generated from one of the targets from adhering to the other of the targets; a shielding member; an oxygen supply unit configured to supply an oxygen-containing gas to the substrate mounted on the mounting unit; and a control unit configured to perform supplying a plasma-generating voltage to the targets and sputtering the targets and supplying the oxygen-containing gas from the oxygen supply unit to the substrate.
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公开(公告)号：US09673078B2
公开(公告)日：2017-06-06
申请号：US14721452
申请日：2015-05-26
Applicant: TOKYO ELECTRON LIMITED
Inventor： Tetsuya Miyashita , Masamichi Hara , Naoyuki Suzuki , Kaoru Yamamoto , Kouji Maeda
IPC: H01L21/683 , H01L21/67 , H01L21/687
CPC classification number: H01L21/6833 , H01L21/67109 , H01L21/67115 , H01L21/6875
Abstract: A cooling processing apparatus includes: a processing vessel; an electrostatic chuck installed in the processing vessel, the electrostatic chuck having a mounting surface on which an object to be processed is mounted; a cooling mechanism configured to cool the electrostatic chuck; and a lamp heating device configured to remove moisture attached to the mounting surface. Further, a method for operating the cooling processing apparatus includes: decompressing the space in the processing vessel by using the exhaust device; removing the moisture attached to the mounting surface of the electrostatic chuck by using the lamp heating device; and cooling the electrostatic chuck by using the cooling mechanism after the removal of the moisture performed by the lamp heating device is terminated.
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