摘要:
Provided is an apparatus for detecting biopolymers (DNA) capable of total analysis including non-reacted samples without complicated operations such as washing. A DNA probe is fixed to one of electrodes and direct current voltage is placed between the electrodes, so that it becomes possible to separate complementary strand sample DNA and non-complementary strand sample DNA. By analyzing from a ratio in the whole reaction system, it is possible to obtain clearer results. Further, by using electrophoresis by gel together, it is possible to separate reacted samples and non-reacted samples to perform measurements therefor in the same reaction field.
摘要:
Provided is an apparatus for detecting biopolymers (DNA) capable of total analysis including non-reacted samples without complicated operations such as washing.A DNA probe is fixed to one of electrodes and direct current voltage is placed between the electrodes, so that it becomes possible to separate complementary strand sample DNA and non-complementary strand sample DNA. By analyzing from a ratio in the whole reaction system, it is possible to obtain clearer results. Further, by using electrophoresis by gel together, it is possible to separate reacted samples and non-reacted samples to perform measurements therefor in the same reaction field.
摘要:
A method for depositing metal layers with good surface morphology using sequential flow deposition includes alternately exposing a substrate in a process chamber to a metal-carbonyl precursor gas and a reducing gas. During exposure with the metal-carbonyl precursor gas, a thin metal layer is deposited on the substrate, and subsequent exposure of the metal layer to the reducing gas aids in the removal of reaction by-products from the metal layer. The metal-carbonyl precursor gas and a reducing gas exposure steps can be repeated until a metal layer with a desired thickness is achieved. The metal-carbonyl precursor can, for example, be selected from W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12.
摘要:
A method of forming a tungsten film is capable of forming a tungsten film having a low resistivity. The method of forming a tungsten film (50) on a surface of a workpiece by a vacuum processing system (2) comprises, in sequential steps: a seed crystal growing process for growing tungsten seed crystal grains (48) on the surface of the workpiece in an atmosphere of a film forming gas containing tungsten atoms; a boron-exposure process for exposing the workpiece to an atmosphere of a boron-containing gas for a short time; and a tungsten film forming process for forming a tungsten film by making the tungsten seed crystal grains grow in an atmosphere of a gas containing a film forming gas containing tungsten atoms, and a hydrogen-diluted boron-containing gas. The tungsten film has a low resistivity.
摘要:
A method for processing a substrate includes the steps of determining an allowable margin of process condition such that a substrate is processed without forming particles, selecting a process condition of a substrate for a production process such that the process condition falls in the allowable margin in the production process, and carrying out a processing of the substrate in the production process at the selected process condition, wherein the step of determining the allowable margin includes the steps of introducing an optical beam to an atmosphere in which the substrate is processed in the step of determining the allowable margin, and detecting scattering of the optical beam.
摘要:
A method of forming a tungsten film on a surface of an object to be processed in a vessel capable of being vacuumized, includes the steps of forming a tungsten film by alternately repeating a reduction gas supplying process for supplying a reduction gas and a tungsten gas supplying process for supplying a tungsten-containing gas with an intervening purge process therebetween for supplying an inert gas while vacuumizing the vessel. A reduction gas supplying period of a reduction gas supplying process among the repeated reduction gas supplying processes is set to be longer than that of the remaining reduction gas supplying processes.
摘要:
Provided is an apparatus for detecting biopolymers (DNA) capable of total analysis including non-reacted samples without complicated operations such as washing.A DNA probe is fixed to one of electrodes and direct current voltage is placed between the electrodes, so that it becomes possible to separate complementary strand sample DNA and non-complementary strand sample DNA. By analyzing from a ratio in the whole reaction system, it is possible to obtain clearer results. Further, by using electrophoresis by gel together, it is possible to separate reacted samples and non-reacted samples to perform measurements therefor in the same reaction field.
摘要:
Identically shaped spots can be formed sequentially and stably by a spotting pin comprising a bar-like plunger 20. Four projections each formed in the shape of a top portion of a quadrangular pyramid are formed on the head of the plunger 20. The apexes 21 of the quadrangular pyramids constituting the projections are located inside a virtual plane extending from the peripheral wall of the plunger.
摘要:
Disclosed is a biopolymer (DNA) detector capable of performing overall analysis including an unreacted sample without needing any complex work such as washing or the like. A DNA probe 66 is fixed to an electrode plate 22, and the electrode plate 22 is displaced by applying a DC voltage between electrode plates 22 and 23. Thus, sample DNA 63 to be detected can be separated. It becomes possible to obtain a clearer result by performing analysis based on a ratio of an entire reaction system.
摘要:
A semiconductor device fabricating method includes a preparatory process that brings a first source gas containing tungsten atoms into contact with a workpiece and that does not bring a second source gas containing nitrogen atoms into contact with the workpiece, and a film forming process that forms a tungsten nitride film on the workpiece by using the first and the second source gases so as to fabricate a semiconductor device. The semiconductor device fabricating method is capable of preventing the tungsten nitride film from peeling off from a layer underlying the same when the tungsten nitride film is subjected to heat treatment.