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16 条记录 (耗时 0.024 秒)

    Method of manufacturing a compound semiconductor device having gate electrode self-aligned to source and drain electrodes
    12.
    发明授权
    Method of manufacturing a compound semiconductor device having gate electrode self-aligned to source and drain electrodes 失效
    具有栅电极与源电极和漏电极自对准的化合物半导体器件的制造方法

    公开(公告)号：US5409849A

    公开(公告)日：1995-04-25

    申请号：US58684

    申请日：1993-05-07

    申请人： Yoshihiro Kishita ,  Masanori Ochi ,  Souichi Imamura ,  Toshikazu Fukuda

    发明人： Yoshihiro Kishita ,  Masanori Ochi ,  Souichi Imamura ,  Toshikazu Fukuda

    IPC分类号： H01L29/812 ,  H01L21/285 ,  H01L21/335 ,  H01L21/338 ,  H01L29/417 ,  H01L29/423 ,  H01L29/778 ,  H01L21/265

    CPC分类号： H01L29/66863 ,  H01L21/28587 ,  H01L29/42316 ,  H01L29/66462

    摘要： According to this invention, there is provided a method of manufacturing a compound semiconductor which can be formed at a high yield and in which variations in characteristics of elements caused by variations in distances between a source and a gate and between a drain and the gate can be minimized. In addition, there is provided a compound semiconductor device having a structure capable of increasing a power gain and obtaining a high-speed operation. According to this invention, an active layer is formed on a compound semi-conductor substrate, and source/drain electrodes are formed on the active layer to be separated from each other. The wall insulating films are respectively formed on side walls of the electrodes, and a gate electrode is formed between the side wall insulating films to be respectively in contact therewith.

    摘要翻译： 根据本发明，提供一种制造化合物半导体的方法，该化合物半导体可以以高产率形成，并且由源极和栅极之间以及漏极和栅极之间的距离变化引起的元件的特性的变化可以 最小化 此外，提供了具有能够增加功率增益并获得高速操作的结构的化合物半导体器件。 根据本发明，在复合半导体基板上形成有源层，在有源层上形成源极/漏极，以分离。 壁绝缘膜分别形成在电极的侧壁上，并且在侧壁绝缘膜之间形成分别与其接触的栅电极。

    Compound semiconductor integrated circuit having improved electrode bonding arrangements
    15.
    发明授权
    Compound semiconductor integrated circuit having improved electrode bonding arrangements 失效
    具有改进的电极接合装置的复合半导体集成电路

    公开(公告)号：US5329154A

    公开(公告)日：1994-07-12

    申请号：US32278

    申请日：1993-03-17

    申请人： Yoshihiro Kishita ,  Toshikazu Fukuda ,  Yuji Minami

    发明人： Yoshihiro Kishita ,  Toshikazu Fukuda ,  Yuji Minami

    IPC分类号： H01L23/48 ,  H01L27/06 ,  H01L29/784 ,  H01L31/0224

    CPC分类号： H01L27/0605 ,  H01L23/481 ,  H01L2924/0002

    摘要： An integrated circuit including a wafer having a GaAs substrate, an un-doped GaAs layer, and a GaAs active layer. This active layer may have an HEMT structure to improve its operation speed. Also, the substrate may a multi-layer structure to form a three dimensional capacitor. At least one mesa portion is formed on the substrate by removing a portion of the un-doped GaAs layer and GaAs active layer. A source electrode, for example, is formed on the mesa portion, and a ground electrode is formed on an exposed surface of the substrate. These electrodes are connected to each other by means of a wiring metal layer. As a result, the source electrode is easily grounded without using a long bonding wire.

    摘要翻译： 一种集成电路，包括具有GaAs衬底，未掺杂GaAs层和GaAs活性层的晶片。 该活性层可具有HEMT结构以改善其操作速度。 此外，基板可以是多层结构以形成三维电容器。 通过去除一部分未掺杂的GaAs层和GaAs活性层，在衬底上形成至少一个台面部分。 源极电极例如形成在台面部分上，接地电极形成在基板的露出面上。 这些电极通过布线金属层彼此连接。 结果，源电极容易接地而不使用长的接合线。

    Semiconductor hall element with magnetic powder in resin
    16.
    发明授权
    Semiconductor hall element with magnetic powder in resin 失效
    半导体霍尔元件与磁粉在树脂中

    公开(公告)号：US4905318A

    公开(公告)日：1990-02-27

    申请号：US328792

    申请日：1989-03-27

    申请人： Toshikazu Fukuda ,  Toshihiro Kato

    发明人： Toshikazu Fukuda ,  Toshihiro Kato

    IPC分类号： H01L43/04 ,  H01L43/06 ,  H01L43/14

    CPC分类号： H01L43/14 ,  H01L43/06

    摘要： A highly magnetic Hall element comprising a substrate, a Hall element chip mounted on the substrate, and a magnetic member interposed between the substrate and the chip. The magnetic member increases the coercive force of the element, and is formed by laminating resin layers mixed with powder having a high magnetic permeability, one upon another, by stencil printing on that side of a semiconductor wafer in which a Hall element is mounted. The wafer and the magnetic member are diced together, to provide a Hall element chip. The magnetic member formed on the Hall element chip is adhered to substrate, with half-cured surface put in contact with the substrate.

    摘要翻译： 一种高磁性霍尔元件，包括基板，安装在基板上的霍尔元件芯片和插入在基板和芯片之间的磁性元件。 磁性部件提高元件的矫顽力，并且通过在其中安装霍尔元件的半导体晶片的那一侧上通过模板印刷层叠与具有高磁导率的粉末混合的树脂层来形成。 将晶片和磁性部件切割在一起，以提供霍尔元件芯片。 形成在霍尔元件芯片上的磁性部件粘附到基板上，半固化表面与基板接触。