公开(公告)号：US20070051471A1

公开(公告)日：2007-03-08

申请号：US10264664

申请日：2002-10-04

申请人： Mark Kawaguchi ,  Elizabeth Pavel ,  James Papanu ,  Jonathan Mohn ,  John Yamartino ,  Christopher Lane ,  Michael Barnes ,  Robert Wunar

发明人： Mark Kawaguchi ,  Elizabeth Pavel ,  James Papanu ,  Jonathan Mohn ,  John Yamartino ,  Christopher Lane ,  Michael Barnes ,  Robert Wunar

IPC分类号： C23F1/00

CPC分类号： H01L21/67069 ,  G03F7/427 ,  H01J37/321 ,  H01J37/32357 ,  H01J2237/3342

摘要： One embodiment of the present invention is a stripping reactor that includes: (a) a remote plasma source disposed to output a gas; (b) a gas distribution plate connected to ground that transmits the gas output from the remote plasma source to a processing chamber; (c) a wafer support disposed in the processing chamber; (d) a wafer support assembly disposed about the wafer pedestal that includes an outer conductive peripheral structure connected to ground; and (e) an RF power supply connected to supply RF power to the wafer support.

摘要翻译： 本发明的一个实施例是一种汽提反应器，其包括：（a）设置成输出气体的远程等离子体源; （b）连接到地面的气体分配板，其将从远程等离子体源输出的气体传送到处理室; （c）设置在处理室中的晶片支撑件; （d）设置在晶片基座周围的晶片支撑组件，其包括连接到地的外部导电外围结构; 和（e）连接以向晶片支架提供RF功率的RF电源。

公开(公告)号：US20050255697A1

公开(公告)日：2005-11-17

申请号：US11075903

申请日：2005-03-09

申请人： Huong Nguyen ,  Michael Barnes ,  Li-Qun Xia ,  Mehul Naik

发明人： Huong Nguyen ,  Michael Barnes ,  Li-Qun Xia ,  Mehul Naik

IPC分类号： H01L21/311 ,  H01L21/312 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76813 ,  H01L21/31138 ,  H01L21/3122 ,  H01L21/76829 ,  H01L21/76835

摘要： A method of selectively etching organosilicate layers in integrated circuit fabrication processes is disclosed. The organosilicate layers are selectively etched using a hydrogen-containing fluorocarbon gas. The hydrogen-containing fluorocarbon gas may be used to selectively etch an organosilicate layer formed on a silicon oxide stop etch layer when fabricating a damascene structure.

摘要翻译： 公开了一种在集成电路制造工艺中有选择地蚀刻有机硅酸盐层的方法。 使用含氢碳氟化合物气体有选择地蚀刻有机硅酸盐层。 当制造镶嵌结构时，含氢碳氟化合物气体可以用于选择性地蚀刻形成在氧化硅阻挡蚀刻层上的有机硅酸盐层。

公开(公告)号：US06893533B2

公开(公告)日：2005-05-17

申请号：US10697893

申请日：2003-10-29

申请人： John Holland ,  Valentin N. Todorow ,  Michael Barnes

发明人： John Holland ,  Valentin N. Todorow ,  Michael Barnes

IPC分类号： H01J37/32 ,  H05H1/00 ,  C23C16/00 ,  H01J21/00

CPC分类号： H01J37/321

摘要： The invention in one embodiment is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. An RF plasma source power supply is connected across each of the plural conductors.

摘要翻译： 在一个实施例中的本发明在用于处理半导体工件的等离子体反应器中实现。 反应器包括具有侧壁和天花板的真空室，腔室内的工件支撑基座，并且大致面对天花板，能够将工艺气体供应到室中的气体入口和覆盖在天花板上的螺线管交错的并行导体线圈天线 并且包括缠绕在大致垂直于天花板的相应同心螺旋螺线管中的对称轴线的第一多个导体，其具有来自对称轴线的至少几乎均匀的横向位移，每个螺旋螺线管在与另一个螺旋螺线管平行的方向上偏离 对称轴。 RF等离子体源电源连接在多个导体中的每一个上。

公开(公告)号：US06879870B2

公开(公告)日：2005-04-12

申请号：US10124191

申请日：2002-04-16

申请人： Steven C. Shannon ,  Daniel J. Hoffman ,  Michael Barnes ,  Lee LaBlanc

发明人： Steven C. Shannon ,  Daniel J. Hoffman ,  Michael Barnes ,  Lee LaBlanc

IPC分类号： H01J37/32 ,  G01F19/00

CPC分类号： H01J37/32174 ,  H01J37/32082

摘要： A method and apparatus for routing harmonic energy within a plasma to ground in a plasma enhanced semiconductor wafer processing reactor. A model of the chamber is used to determine the pathway for RF power and the harmonic energy of that RF power through the chamber. From this model, the placement and design of a harmonic routing circuit is determined to shunt the harmonic energy to ground.

摘要翻译： 一种用于在等离子体增强的半导体晶片处理反应器中将等离子体内的谐波能量路由到地的方法和装置。 该室的模型用于确定RF功率的路径和通过室的RF功率的谐波能量。 从该模型中，确定谐波路由电路的布置和设计，以将谐波能量分流到地。

公开(公告)号：US20050067076A1

公开(公告)日：2005-03-31

申请号：US10899451

申请日：2004-07-26

申请人： Michael Barnes ,  Ivan Mendenhall ,  Robert Taylor

发明人： Michael Barnes ,  Ivan Mendenhall ,  Robert Taylor

IPC分类号： C06B23/02 ,  C06B29/22 ,  C06B31/12

CPC分类号： C06B23/02 ,  C06B29/22

摘要： Ammonium perchlorate-containing gas generant compositions which, upon combustion, produce or result in an improved effluent and related methods for generating an inflation gas for use in an inflatable restraint system are provided. Such ammonium perchlorate-containing gas generant compositions include ammonium perchlorate present with a mean particle size in excess of 100 microns. Such ammonium perchlorate-containing gas generant compositions also include or contain a chlorine scavenger present in an amount effective to result in a gaseous effluent that is substantially free of hydrogen chloride when the gas generant is combusted, wherein at least about 98 weight percent of the chlorine scavenger is a copper-containing compound. Suitable copper-containing chlorine scavenger compounds include basic copper nitrate, cupric oxide, copper diammine dinitrate-ammonium nitrate mixture wherein ammonium nitrate is present in the mixture in a range of about 3 to about 90 weight percent, copper diammine bitetrazole, a copper-nitrate complex resulting from reaction of 5-aminotetrazole with basic copper nitrate and combinations thereof.

摘要翻译： 提供了含有高氯酸铵的气体发生剂组合物，其在燃烧时产生或导致改进的流出物以及用于产生用于可充气约束系统的膨胀气体的相关方法。 这种含高氯酸铵的气体发生剂组合物包括平均粒径超过100微米的高氯酸铵。 这种含高氯酸铵的气体发生剂组合物还包含或含有氯清除剂，其量有效地导致当气体发生剂燃烧时基本上不含氯化氢的气态流出物，其中至少约98重量％的氯 清除剂是含铜化合物。 合适的含铜氯清除剂包括碱式硝酸铜，氧化铜，二硝酸铜二硝酸铵 - 硝酸铵混合物，其中硝酸铵在约3至约90重量％的范围内存在于混合物中，铜二氨基四唑，硝酸铜 由5-氨基四唑与碱式硝酸铜反应产生的络合物及其组合。

公开(公告)号：US06869896B2

公开(公告)日：2005-03-22

申请号：US10647959

申请日：2003-08-26

申请人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

发明人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC分类号： C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1031 ,  Y10T428/24926 ,  Y10T428/31663

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

摘要翻译： 一种通过有机硅化合物和包含碳的氧化气体以恒定的RF功率水平的反应沉积低介电常数膜的方法和装置。 在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。 氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。 氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。

公开(公告)号：US06734115B2

公开(公告)日：2004-05-11

申请号：US10229992

申请日：2002-08-27

申请人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

发明人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC分类号： H01L2131

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1031 ,  Y10T428/24926 ,  Y10T428/31663

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

公开(公告)号：US06626185B2

公开(公告)日：2003-09-30

申请号：US09262019

申请日：1999-03-04

申请人： Alex Demos ,  Paul Kevin Shufflebotham ,  Michael Barnes ,  Huong Nguyen ,  Brian McMillin ,  Monique Ben-Dor

发明人： Alex Demos ,  Paul Kevin Shufflebotham ,  Michael Barnes ,  Huong Nguyen ,  Brian McMillin ,  Monique Ben-Dor

IPC分类号： B08B704

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  Y10S438/905

摘要： A plasma cleaning method for removing deposits in a CVD chamber. The method includes introducing a cleaning gas comprising a fluorine-based gas into the chamber. A plasma is formed by exposing the cleaning gas to an inductive field generated by resonating a radio frequency current in a RF antenna coil. A plasma cleaning step is performed by contacting interior surfaces of the chamber with the plasma for a time sufficient to remove the deposits on the interior surfaces. An advantage of the plasma cleaning method is that it allows for in-situ cleaning of the chamber at high rates, thereby effectively reducing equipment downtime. The method has particular applicability in the cleaning of a PECVD process chamber.

摘要翻译： 一种用于去除CVD室中的沉积物的等离子体清洁方法。 该方法包括将包含氟基气体的清洁气体引入室中。 通过将清洁气体暴露于通过使RF天线线圈中的射频电流谐振而产生的感应场而形成等离子体。 通过使室的内表面与等离子体接触足以消除内表面上的沉积物的时间来进行等离子体清洗步骤。 等离子体清洗方法的一个优点是可以高速率地对腔室进行原位清洗，从而有效地减少设备停机时间。 该方法在PECVD处理室的清洁中具有特别的适用性。

公开(公告)号：US06277237B1

公开(公告)日：2001-08-21

申请号：US09713516

申请日：2000-11-14

申请人： Alan M. Schoepp ,  William M. Denty, Jr. ,  Michael Barnes

发明人： Alan M. Schoepp ,  William M. Denty, Jr. ,  Michael Barnes

IPC分类号： C23C1600

CPC分类号： H01J37/32495 ,  Y10S156/916

摘要： A chamber liner for use in a semiconductor process chamber and a semiconductor process chamber containing the chamber liner are disclosed. The process chamber includes a housing having an inner surface defining a chamber in which a vacuum is drawn during processing of a semiconductor wafer. The chamber liner has a plasma confinement shield with a plurality of apertures. An outer sidewall extends upwardly from the plasma confinement shield. An outer flange extends outwardly from the outer sidewall such that the outer flange extends beyond the chamber and into a space at atmospheric pressure. The chamber liner preferably further includes an inner sidewall that extends upwardly from the plasma confinement shield. The plasma confinement shield, the inner and outer sidewalls, and the outer flange are preferably integral with one another.

公开(公告)号：US06223862B1

公开(公告)日：2001-05-01

申请号：US09336119

申请日：1999-06-17

申请人： Michael Barnes

发明人： Michael Barnes

IPC分类号： B66B500

CPC分类号： B66B7/06

摘要： A device and method are set forth for tensioning elevator cables. The device includes a platform supporting a plurality of hydraulic cylinders each adapted to be coupled to a thimble rod for a cable. Hydraulic fluid is supplied to each cylinder at the same pressure until each cable load is transferred from the cable system hitch plate to the platform indicating that each cable is now under the same tension. The thimble rods are adjusted with the cables now at the same tension and the hydraulic fluid is vented from the cylinders to transfer the cable loads back to the hitch plate.

摘要翻译： 提出了用于张紧电梯电缆的装置和方法。 该装置包括支撑多个液压缸的平台，每个液压缸适于联接到用于电缆的套筒杆。 液压油以相同的压力供应到每个气缸，直到每个电缆负载从电缆系统挂钩板传递到平台，指示每个电缆现在处于相同的张力下。 使用电缆调整套管杆的张力相同，液压流体从气缸中排出，将电缆负载传回挂钩板。