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    Uniform batch film deposition process and films so produced
    11.
    发明申请
    Uniform batch film deposition process and films so produced 审中-公开
    均匀分批膜沉积工艺和薄膜如此生产

    公开(公告)号：US20070010072A1

    公开(公告)日：2007-01-11

    申请号：US11482887

    申请日：2006-07-07

    申请人： Robert Bailey ,  Taiqing Qiu ,  Cole Porter ,  Olivier Laparra ,  Robert Chatham ,  Martin Mogaard ,  Helmuth Treichel

    发明人： Robert Bailey ,  Taiqing Qiu ,  Cole Porter ,  Olivier Laparra ,  Robert Chatham ,  Martin Mogaard ,  Helmuth Treichel

    IPC分类号： H01L21/20

    CPC分类号： C23C16/54 ,  C23C16/308 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45504 ,  C23C16/45578 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3185

    摘要： A batch of wafer substrates is provided with each wafer substrate having a surface. Each surface is coated with a layer of material applied simultaneously to the surface of each of the batch of wafer substrates. The layer of material is applied to a thickness that varies less than four thickness percent across the surface and exclusive of an edge boundary and having a wafer-to-wafer thickness variation of less than three percent. The layer of material so applied is a silicon oxide, silicon nitride or silicon oxynitride with the layer of material being devoid of carbon and chlorine. Formation of silicon oxide or a silicon oxynitride requires the inclusion of a co-reactant. Silicon nitride is also formed with the inclusion of a nitrification co-reactant. A process for forming such a batch of wafer substrates involves feeding the precursor into a reactor containing a batch of wafer substrates and reacting the precursor at a wafer substrate temperature, total pressure, and precursor flow rate sufficient to create such a layer of material. The delivery of a precursor and co-reactant as needed through vertical tube injectors having multiple orifices with at least one orifice in registry with each of the batch of wafer substrates and exit slits within the reactor to create flow across the surface of each of the wafer substrates in the batch provides the within-wafer and wafer-to-wafer uniformity.

    摘要翻译： 一批晶片基板设置有每个晶片基板具有表面。 每个表面涂覆有同时施加到每批晶片衬底的表面的一层材料。 该材料层被施加到在整个表面上变化小于四个厚度百分比的厚度，而不是边缘边界，并且晶片到晶片的厚度变化小于3％。 如此施加的材料层是氧化硅，氮化硅或氮氧化硅，其中该材料层不含碳和氯。 氧化硅或氮氧化硅的形成需要包含共反应物。 氮化氮也通过包含硝化共反应物形成。 用于形成这样一批晶片衬底的方法包括将前体进料到含有一批晶片衬底的反应器中，并在足以产生这种材料层的晶片衬底温度，总压力和前体流速下使前体反应。 根据需要通过具有多个孔的垂直管注射器输送前体和共反应物，其中至少一个孔与反应器内的每批晶片基板和出口狭缝对齐，以产生跨过每个晶片的表面的流动 该批次中的衬底提供了晶片内和晶片与晶片之间的均匀性。

    Hot wall rapid thermal processor
    15.
    发明授权
    Hot wall rapid thermal processor 失效
    热墙快速热处理器

    公开(公告)号：US06492621B2

    公开(公告)日：2002-12-10

    申请号：US09934952

    申请日：2001-08-21

    申请人： Christopher Ratliff ,  Taiqing Qiu ,  Jeff Kowalski ,  Morteza Yadollahi ,  Saeed Sedehi

    发明人： Christopher Ratliff ,  Taiqing Qiu ,  Jeff Kowalski ,  Morteza Yadollahi ,  Saeed Sedehi

    IPC分类号： F27B514

    CPC分类号： C23C16/463 ,  C23C16/455 ,  C23C16/4584 ,  C30B25/10 ,  C30B25/14 ,  F27B5/14 ,  F27B2005/161 ,  F27D1/1858 ,  F27D2003/0075 ,  H01L21/67109

    摘要： An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

    摘要翻译： 公开了一种用于晶片热处理的设备。 该装置包括具有热源的加热室。 冷却室位于加热室附近并且包括冷却源。 晶片保持器构造成通过通道在冷却室和加热室之间移动，并且一个或多个快门限定通道的尺寸。 一个或多个百叶窗可以在晶片保持器可以穿过通道的打开位置和限定通道的阻塞位置之间移动，该通道小于当快门处于打开位置时限定的通道。

    Radical Assisted Batch Film Deposition
    17.
    发明申请
    Radical Assisted Batch Film Deposition 审中-公开
    激光辅助分批膜沉积

    公开(公告)号：US20080038486A1

    公开(公告)日：2008-02-14

    申请号：US11833027

    申请日：2007-08-02

    申请人： Helmuth Treichel ,  Taiqing Qiu ,  Robert Jeffrey Bailey

    发明人： Helmuth Treichel ,  Taiqing Qiu ,  Robert Jeffrey Bailey

    IPC分类号： C23C16/00

    CPC分类号： C23C16/401 ,  C23C16/4488 ,  C23C16/45578

    摘要： A process for radical assisted film deposition simultaneously on multiple wafer substrates is provided. The multiple wafer substrates are loaded into a reactor that is heated to a desired film deposition temperature. A stable species source of oxide or nitride counter ion is introduced into the reactor. An in situ radical generating reactant is also introduced into the reactor along with a cationic ion deposition source. The cationic ion deposition source is introduced for a time sufficient to deposit a cationic ion-oxide or a cationic ion-nitride film simultaneously on multiple wafer substrates. Deposition temperature is below a conventional chemical vapor deposition temperature absent the in situ radical generating reactant. A high degree of wafer-to-wafer uniformity among the multiple wafer substrates is obtained by introducing the reactants through elongated vertical tube injectors having vertically displaced orifices, injectors surrounded by a liner having vertically displaced exhaust ports to impart across flow of movement of reactants simultaneously across the multiple wafer substrates. With molecular oxygen as a stable species source of oxide, and hydrogen as the in situ radical generating reactant, oxide films of silicon are readily produced with a silicon-containing precursor introduced into the reactor.

    摘要翻译： 提供了一种在多个晶片基板上同时进行自由基辅助膜沉积的工艺。 将多个晶片衬底装载到加热到所需膜沉积温度的反应器中。 将氧化物或氮化物抗衡离子的稳定物质源引入反应器。 原位产生自由基的反应物也与阳离子离子沉积源一起引入反应器。 引入阳离子离子沉积源足以在多个晶片衬底上同时沉积阳离子氧化物或阳离子氮化物膜的时间。 沉积温度低于常规化学气相沉积温度，不存在原位产生自由基的反应物。 通过将具有垂直移位的孔的细长垂直管喷射器引入反应物，由具有垂直移位的排气口的衬套围绕的喷射器同时施加反应物的运动流动，可以获得多个晶片与晶片之间的高度的均匀性 跨越多个晶片衬底。 以分子氧作为氧化物的稳定物质来源，氢作为原位产生自由基的反应物，硅的氧化膜容易地被引入到反应器中的含硅前体产生。

    Hot wall rapid thermal processor
    18.
    发明授权
    Hot wall rapid thermal processor 失效
    热墙快速热处理器

    公开(公告)号：US06462310B1

    公开(公告)日：2002-10-08

    申请号：US09638113

    申请日：2000-08-11

    申请人： Christopher T. Ratliff ,  Jeffrey M. Kowalski ,  Taiqing Qiu

    发明人： Christopher T. Ratliff ,  Jeffrey M. Kowalski ,  Taiqing Qiu

    IPC分类号： F27B514

    CPC分类号： C23C16/463 ,  C23C16/455 ,  C23C16/4584 ,  C30B25/10 ,  C30B25/14 ,  F27B5/14 ,  F27B2005/161 ,  F27D1/1858 ,  F27D2003/0075 ,  H01L21/67109

    摘要： An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is. configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

    摘要翻译： 公开了一种用于晶片热处理的设备。 该装置包括具有热源的加热室。 冷却室位于加热室附近并且包括冷却源。 晶圆座是。 构造成通过通道在冷却室和加热室之间移动，并且一个或多个快门限定通道的尺寸。 一个或多个百叶窗可以在晶片保持器可以穿过通道的打开位置和限定通道的阻塞位置之间移动，该通道小于当快门处于打开位置时限定的通道。