摘要:
An exemplary ion source for creating a stream of ions has a chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A seals has a ceramic body having an outer wall that abuts the arc chamber body along a circumferential outer lip. The seal also has one or more radially inner channels bounded by one or more inner walls spaced inwardly from the outer wall.
摘要:
The present invention is directed to a beam control circuit and method used to minimize particle contamination in an ion implantation system by reducing the duty factor of the ion beam. In one embodiment the beam control circuit comprises a high voltage switch connected in series with a power supply and an ion source portion of the ion implantation system, wherein the switch is operable to interrupt or reestablish a connection between the power supply and an electrode of the ion source including electrodes for plasma production. The beam control circuit also comprises a switch controller operable to control the duty factor of the ion beam by controlling the switch to close before a start of ion implantation and to open after a completion of implantation or at other times when the beam is not needed, thereby minimizing beam duty and particle contamination. The beam control technique may be applied to wafer doping implantation and duty factor reduction. Protection circuits for the high voltage switch absorb energy from reactive components and clamp any overvoltages.
摘要:
A magnetic deflector for an ion beam is disclosed and comprises first and second coils. The coils are positioned above and below the beam, respectively, and extend along a width of the beam. Current passes through the coils to generate a magnetic field therebetween that is generally perpendicular to a direction of travel of the beam along substantially the entire width thereof. In another aspect of the invention, a method of deflecting a beam prior to implantation into a workpiece is disclosed. The method includes determining one or more properties associated with the beam and selectively activating one of a magnetic deflection module and an electrostatic deflection module based on the determination.
摘要:
A deceleration electrode for a high-energy, ultra-low ion implanter is provided. The deceleration electrodes are “tilted” (i.e., not perpendicular with respect the ion beam axis. The deceleration electrode reduces the energy of the ion beam and simultaneously separates neutral particles out of the ion beam. The length of the deceleration electrode is slightly longer than a conventional deceleration electrode. However, because the device functions to also separate neutral particles out of the ion beam, the need for a separate neutral particle separation device is eliminated. Thus, the compact design of the dual function electrode configuration permits a shortening of the distance that a high-current, ultra-low energy ion beam must travel to the target wafer. Further, because the neutral particles can be almost completely separated from the ion beam, the decel ratio may be set high enabling an ultra-low energy, high current ion beam. In the tilted decel apparatus of the present invention, a plurality of decel electrodes having openings are arranged in an inclined manner against the axis which is perpendicular to the base axis of a beam passage. An ion beam impinging with a predetermined ion beam offset distance and inclination angle passes through gaps formed between the decel electrodes and thus, an ion beam is decelerated and neutral particles are separated from the ion beam. Thus, an ion beam can be formed having a high current, low neutral contamination, and ultra-low energy.
摘要:
A system and method extraction electrode system, comprising an extraction electrode, wherein the extraction electrode, further defines an aperture and forms a portion of the outside wall of the ion source and is configured to extract ions from the ion source, a suppression disk half assembly comprising two suppression electrode plate disk halves that form a variable suppression aperture, a ground disk half assembly comprising two ground electrode plate disk halves that form an variable ground aperture, wherein the suppression disk half assembly is configured between the extraction electrode and the ground disk half assembly, wherein the suppression aperture and the ground aperture variable in the direction perpendicular to the ion beam direction of travel, and wherein the extraction electrode system is used with a pendulum reciprocating drive apparatus.
摘要:
An ion implantation system comprising an ion source that generates an ion beam along a beam path, a mass analyzer component downstream of the ion source that performs mass analysis and angle correction on the ion beam, a resolving aperture electrode comprising at least one electrode downstream of the mass analyzer component and along the beam path having a size and shape according to a selected mass resolution and a beam envelope, a deflection element downstream of the resolving aperture electrode that changes the path of the ion beam exiting the deflection element, a deceleration electrode downstream of the deflection element that decelerates the ion beam, a support platform within an end station for retaining and positioning a workpiece which is implanted with charged ions, and wherein the end station is mounted approximately eight degrees counterclockwise so that the deflected ion beam is perpendicular to the workpiece.
摘要:
A system and method extraction electrode system, comprising an extraction electrode, wherein the extraction electrode, further defines an aperture and forms a portion of the outside wall of the ion source and is configured to extract ions from the ion source, a suppression disk half assembly comprising two suppression electrode plate disk halves that form a variable suppression aperture, a ground disk half assembly comprising two ground electrode plate disk halves that form an variable ground aperture, wherein the suppression disk half assembly is configured between the extraction electrode and the ground disk half assembly, wherein the suppression aperture and the ground aperture variable in the direction perpendicular to the ion beam direction of travel, and wherein the extraction electrode system is used with a pendulum reciprocating drive apparatus.
摘要:
A mass analyzer for a ribbon shaped ion beam is disclosed. The mass analyzer comprises a pair of coils that define an entrance end and an exit end of the analyzer. Field clamps are employed at or proximate to one or more of the entrance and exit ends of the mass analyzer. The field clamps operate to terminate fringing fields close to the entrance and exit ends of the mass analyzer, thereby reducing the impact of such fringing fields on the ribbon beam and improving beam uniformity.
摘要:
An accelerating structure and related method for accelerating/decelerating ions of an ion beam are disclosed. The structure and related method are suitable for use in selectively implanting ions into a workpiece or wafer during semiconductor fabrication to selectively dope areas of the wafer. In addition to accelerating and/or decelerating ions, aspects of the present invention serve to focus as well as to deflect ions of an ion beam. This is accomplished by routing the ion beam through electrodes having potentials developed thereacross. The ion beam is also decontaminated as electrically neutral contaminants within the beam are not affected by the potentials and continue on generally traveling along an original path of the ion beam. The electrodes are also arranged in such a fashion so as to minimize the distance the beam has to travel, thereby mitigating the opportunity for beam blow up.
摘要:
A mass analyzer for a ribbon shaped ion beam is disclosed. The mass analyzer comprises a pair of coils that define an entrance end and an exit end of the analyzer. Field clamps are employed at or proximate to one or more of the entrance and exit ends of the mass analyzer. The field clamps operate to terminate fringing fields close to the entrance and exit ends of the mass analyzer, thereby reducing the impact of such fringing fields on the ribbon beam and improving beam uniformity.