Ion source arc chamber seal
    11.
    发明授权
    Ion source arc chamber seal 有权
    离子源电弧室密封

    公开(公告)号:US07655930B2

    公开(公告)日:2010-02-02

    申请号:US11689769

    申请日:2007-03-22

    IPC分类号: H01J37/08 H01J7/24

    摘要: An exemplary ion source for creating a stream of ions has a chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A seals has a ceramic body having an outer wall that abuts the arc chamber body along a circumferential outer lip. The seal also has one or more radially inner channels bounded by one or more inner walls spaced inwardly from the outer wall.

    摘要翻译: 用于产生离子流的示例性离子源具有至少部分地界定电弧室的电离区域的室主体。 电弧室主体与热丝电弧室壳体一起使用,其直接或间接地将阴极加热至足够的温度,以使电子流过电弧室的电离区域。 密封件具有陶瓷体,该陶瓷体具有沿着周向外唇缘邻接电弧室主体的外壁。 密封件还具有一个或多个径向内部通道,其由与外壁间隔开的一个或多个内壁限定。

    Method of reducing particle contamination for ion implanters
    12.
    发明授权
    Method of reducing particle contamination for ion implanters 有权
    降低离子注入机颗粒污染的方法

    公开(公告)号:US07566887B2

    公开(公告)日:2009-07-28

    申请号:US11648979

    申请日:2007-01-03

    IPC分类号: G21K5/00

    摘要: The present invention is directed to a beam control circuit and method used to minimize particle contamination in an ion implantation system by reducing the duty factor of the ion beam. In one embodiment the beam control circuit comprises a high voltage switch connected in series with a power supply and an ion source portion of the ion implantation system, wherein the switch is operable to interrupt or reestablish a connection between the power supply and an electrode of the ion source including electrodes for plasma production. The beam control circuit also comprises a switch controller operable to control the duty factor of the ion beam by controlling the switch to close before a start of ion implantation and to open after a completion of implantation or at other times when the beam is not needed, thereby minimizing beam duty and particle contamination. The beam control technique may be applied to wafer doping implantation and duty factor reduction. Protection circuits for the high voltage switch absorb energy from reactive components and clamp any overvoltages.

    摘要翻译: 本发明涉及一种束控制电路和方法,用于通过降低离子束的占空比来最小化离子注入系统中的颗粒污染。 在一个实施例中,光束控制电路包括与电源和离子注入系统的离子源部分串联连接的高电压开关,其中开关可操作以中断或重新建立电源和电源之间的连接 离子源包括用于等离子体生产的电极。 光束控制电路还包括开关控制器,其可操作以通过在离子注入开始之前控制开关闭合并且在完成植入之后或在不需要光束的其他时间来控制离子束的占空因数, 从而最大程度地减少波束占空比和颗粒污染。 光束控制技术可以应用于晶片掺杂注入和占空因数降低。 高压开关的保护电路可以吸收反应性元件的能量并夹紧任何过电压。

    Hybrid magnetic/electrostatic deflector for ion implantation systems
    13.
    发明授权
    Hybrid magnetic/electrostatic deflector for ion implantation systems 有权
    用于离子注入系统的混合磁/静电偏转器

    公开(公告)号:US06881966B2

    公开(公告)日:2005-04-19

    申请号:US10461702

    申请日:2003-06-13

    摘要: A magnetic deflector for an ion beam is disclosed and comprises first and second coils. The coils are positioned above and below the beam, respectively, and extend along a width of the beam. Current passes through the coils to generate a magnetic field therebetween that is generally perpendicular to a direction of travel of the beam along substantially the entire width thereof. In another aspect of the invention, a method of deflecting a beam prior to implantation into a workpiece is disclosed. The method includes determining one or more properties associated with the beam and selectively activating one of a magnetic deflection module and an electrostatic deflection module based on the determination.

    摘要翻译: 公开了用于离子束的磁偏转器,并且包括第一和第二线圈。 线圈分别位于梁的上方和下方,并沿着梁的宽度延伸。 电流通过线圈以产生它们之间的磁场,其大致垂直于梁的大致整个宽度的行进方向。 在本发明的另一方面,公开了一种在植入植入工件之前偏转光束的方法。 该方法包括确定与光束相关联的一个或多个属性,并且基于该确定选择性地激活磁偏转模块和静电偏转模块中的一个。

    Deceleration electrode configuration for ultra-low energy ion implanter
    14.
    发明授权
    Deceleration electrode configuration for ultra-low energy ion implanter 有权
    超低能量离子注入机的减速电极配置

    公开(公告)号:US06441382B1

    公开(公告)日:2002-08-27

    申请号:US09316657

    申请日:1999-05-21

    申请人: Yongzhang Huang

    发明人: Yongzhang Huang

    IPC分类号: H01J37317

    摘要: A deceleration electrode for a high-energy, ultra-low ion implanter is provided. The deceleration electrodes are “tilted” (i.e., not perpendicular with respect the ion beam axis. The deceleration electrode reduces the energy of the ion beam and simultaneously separates neutral particles out of the ion beam. The length of the deceleration electrode is slightly longer than a conventional deceleration electrode. However, because the device functions to also separate neutral particles out of the ion beam, the need for a separate neutral particle separation device is eliminated. Thus, the compact design of the dual function electrode configuration permits a shortening of the distance that a high-current, ultra-low energy ion beam must travel to the target wafer. Further, because the neutral particles can be almost completely separated from the ion beam, the decel ratio may be set high enabling an ultra-low energy, high current ion beam. In the tilted decel apparatus of the present invention, a plurality of decel electrodes having openings are arranged in an inclined manner against the axis which is perpendicular to the base axis of a beam passage. An ion beam impinging with a predetermined ion beam offset distance and inclination angle passes through gaps formed between the decel electrodes and thus, an ion beam is decelerated and neutral particles are separated from the ion beam. Thus, an ion beam can be formed having a high current, low neutral contamination, and ultra-low energy.

    摘要翻译: 提供了一种用于高能超低离子注入机的减速电极。 减速电极相对于离子束轴线“倾斜”(即不垂直),减速电极降低离子束的能量,同时将中性粒子从离子束中分离出来,减速电极的长度略长于 然而,由于该装置还用于将离子束中的中性粒子分离,因此不需要分离的中性粒子分离装置,因此双功能电极构造的紧凑设计可以缩短 高电流,超低能量离子束必须行进到目标晶片的距离,此外,由于中性粒子几乎可以完全与离子束分离,所以减小比可以设定得高,能够实现超低能量, 高电流离子束在本发明的倾斜减速装置中,具有开口的多个减速电极设置在倾斜的人中 相对于垂直于梁通道的基轴的轴线。 以预定的离子束偏移距离和倾斜角度照射的离子束通过形成在减速电极之间的间隙,因此离子束被减速,中性粒子与离子束分离。 因此,可以形成具有高电流,低中性污染和超低能量的离子束。

    Extraction electrode system for high current ion implanter
    15.
    发明授权
    Extraction electrode system for high current ion implanter 有权
    高电流离子注入机提取电极系统

    公开(公告)号:US07915597B2

    公开(公告)日:2011-03-29

    申请号:US12050594

    申请日:2008-03-18

    IPC分类号: H01J3/14

    摘要: A system and method extraction electrode system, comprising an extraction electrode, wherein the extraction electrode, further defines an aperture and forms a portion of the outside wall of the ion source and is configured to extract ions from the ion source, a suppression disk half assembly comprising two suppression electrode plate disk halves that form a variable suppression aperture, a ground disk half assembly comprising two ground electrode plate disk halves that form an variable ground aperture, wherein the suppression disk half assembly is configured between the extraction electrode and the ground disk half assembly, wherein the suppression aperture and the ground aperture variable in the direction perpendicular to the ion beam direction of travel, and wherein the extraction electrode system is used with a pendulum reciprocating drive apparatus.

    摘要翻译: 一种系统和方法提取电极系统,包括提取电极,其中所述提取电极还限定孔并形成离子源的外壁的一部分,并且被配置为从离子源提取离子,抑制盘半组件 包括形成可变抑制孔径的两个抑制电极板半部,包括形成可变接地孔的两个接地电极板半部的接地盘半组件,其中抑制盘半组件配置在提取电极和接地盘半部之间 组件,其中所述抑制孔径和所述接地孔径在垂直于所述离子束行进方向的方向上可变,并且其中所述引出电极系统与摆锤往复驱动装置一起使用。

    LOW CONTAMINATION, LOW ENERGY BEAMLINE ARCHITECTURE FOR HIGH CURRENT ION IMPLANTATION
    16.
    发明申请
    LOW CONTAMINATION, LOW ENERGY BEAMLINE ARCHITECTURE FOR HIGH CURRENT ION IMPLANTATION 有权
    低污染,低能量束流建筑用于高电流离子植入

    公开(公告)号:US20090267001A1

    公开(公告)日:2009-10-29

    申请号:US12108890

    申请日:2008-04-24

    申请人: Yongzhang Huang

    发明人: Yongzhang Huang

    IPC分类号: G21K5/10

    摘要: An ion implantation system comprising an ion source that generates an ion beam along a beam path, a mass analyzer component downstream of the ion source that performs mass analysis and angle correction on the ion beam, a resolving aperture electrode comprising at least one electrode downstream of the mass analyzer component and along the beam path having a size and shape according to a selected mass resolution and a beam envelope, a deflection element downstream of the resolving aperture electrode that changes the path of the ion beam exiting the deflection element, a deceleration electrode downstream of the deflection element that decelerates the ion beam, a support platform within an end station for retaining and positioning a workpiece which is implanted with charged ions, and wherein the end station is mounted approximately eight degrees counterclockwise so that the deflected ion beam is perpendicular to the workpiece.

    摘要翻译: 一种离子注入系统,包括沿光束路径产生离子束的离子源,离子源下游的质量分析器组件,其对离子束执行质量分析和角度校正;分辨孔径电极,包括至少一个电极 所述质量分析器部件并且沿着所述光束路径具有根据所选择的质量分辨率和光束包络的尺寸和形状;在所述分辨孔径电极下游的偏转元件改变离开偏转元件的离子束的路径;减速电极 在偏转元件的下游,使离子束减速,在终端站内的支撑平台,用于保持和定位植入有带电离子的工件,并且其中终端站逆时针安装大约八度,使得偏转的离子束垂直 到工件。

    EXTRACTION ELECTRODE SYSTEM FOR HIGH CURRENT ION IMPLANTER
    17.
    发明申请
    EXTRACTION ELECTRODE SYSTEM FOR HIGH CURRENT ION IMPLANTER 有权
    用于高电流离子植入物的提取电极系统

    公开(公告)号:US20090236547A1

    公开(公告)日:2009-09-24

    申请号:US12050594

    申请日:2008-03-18

    IPC分类号: H01J37/08

    摘要: A system and method extraction electrode system, comprising an extraction electrode, wherein the extraction electrode, further defines an aperture and forms a portion of the outside wall of the ion source and is configured to extract ions from the ion source, a suppression disk half assembly comprising two suppression electrode plate disk halves that form a variable suppression aperture, a ground disk half assembly comprising two ground electrode plate disk halves that form an variable ground aperture, wherein the suppression disk half assembly is configured between the extraction electrode and the ground disk half assembly, wherein the suppression aperture and the ground aperture variable in the direction perpendicular to the ion beam direction of travel, and wherein the extraction electrode system is used with a pendulum reciprocating drive apparatus.

    摘要翻译: 一种系统和方法提取电极系统,包括提取电极,其中所述提取电极还限定孔并形成离子源的外壁的一部分,并且被配置为从离子源提取离子,抑制盘半组件 包括形成可变抑制孔径的两个抑制电极板半部,包括形成可变接地孔的两个接地电极板半部的接地盘半组件,其中抑制盘半组件配置在提取电极和接地盘半部之间 组件,其中所述抑制孔径和所述接地孔径在垂直于所述离子束行进方向的方向上可变,并且其中所述引出电极系统与摆锤往复驱动装置一起使用。

    Deflecting acceleration/deceleration gap
    19.
    发明授权
    Deflecting acceleration/deceleration gap 有权
    偏转加速/减速间隙

    公开(公告)号:US06777696B1

    公开(公告)日:2004-08-17

    申请号:US10370952

    申请日:2003-02-21

    IPC分类号: H01J37317

    CPC分类号: H01J37/3171 H01J37/1472

    摘要: An accelerating structure and related method for accelerating/decelerating ions of an ion beam are disclosed. The structure and related method are suitable for use in selectively implanting ions into a workpiece or wafer during semiconductor fabrication to selectively dope areas of the wafer. In addition to accelerating and/or decelerating ions, aspects of the present invention serve to focus as well as to deflect ions of an ion beam. This is accomplished by routing the ion beam through electrodes having potentials developed thereacross. The ion beam is also decontaminated as electrically neutral contaminants within the beam are not affected by the potentials and continue on generally traveling along an original path of the ion beam. The electrodes are also arranged in such a fashion so as to minimize the distance the beam has to travel, thereby mitigating the opportunity for beam blow up.

    摘要翻译: 公开了一种用于离子束离子加速/减速的加速结构和相关方法。 该结构和相关方法适用于在半导体制造期间选择性地将离子注入到工件或晶片中以选择性地掺杂晶片的区域。 除了加速和/或减速离子之外,本发明的方面还用于聚焦以及偏转离子束的离子。 这是通过将离子束穿过具有在其上形成的电位的电极来实现的。 离子束也被净化,因为光束内的电中性污染物不受电位的影响,并且通常沿着离子束的原始路径继续行进。 电极也以这样的方式布置,以便使束必须行进的距离最小化,从而减轻了射束的机会。

    High mass resolution magnet for ribbon beam ion implanters
    20.
    发明授权
    High mass resolution magnet for ribbon beam ion implanters 有权
    用于带状束离子注入机的高质量分辨率磁体

    公开(公告)号:US06770888B1

    公开(公告)日:2004-08-03

    申请号:US10606087

    申请日:2003-06-25

    IPC分类号: H01J37147

    摘要: A mass analyzer for a ribbon shaped ion beam is disclosed. The mass analyzer comprises a pair of coils that define an entrance end and an exit end of the analyzer. Field clamps are employed at or proximate to one or more of the entrance and exit ends of the mass analyzer. The field clamps operate to terminate fringing fields close to the entrance and exit ends of the mass analyzer, thereby reducing the impact of such fringing fields on the ribbon beam and improving beam uniformity.

    摘要翻译: 公开了一种用于带状离子束的质量分析器。 质量分析器包括限定分析器的入口端和出口端的一对线圈。 场夹具用于质量分析器的入口和出口端中的一个或多个处或其附近。 场夹具用于终止接近质量分析器入口和出口端的边缘场,从而减少这种边缘场对带状束的影响,并提高光束的均匀性。