公开(公告)号：US06995406B2

公开(公告)日：2006-02-07

申请号：US10486050

申请日：2003-06-06

申请人： Tsuyoshi Tojo ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Tomonori Hino ,  Osamu Goto ,  Tsuyoshi Fujimoto ,  Osamu Matsumoto ,  Motonobu Takeya ,  Yoshio Oofuji

发明人： Tsuyoshi Tojo ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Tomonori Hino ,  Osamu Goto ,  Tsuyoshi Fujimoto ,  Osamu Matsumoto ,  Motonobu Takeya ,  Yoshio Oofuji

IPC分类号： H01L33/00

CPC分类号： B82Y20/00 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/34333 ,  H01S5/4031

摘要： In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

摘要翻译： 在包括层叠在蓝宝石或其他材料的基板的一个表面上的氮化物III-V化合物半导体层以形成激光结构的多光束半导体激光器中，并且包括形成在氮化物III上的多个阳极电极和多个阴极电极 -V化合物半导体层，其中一个阳极形成为通过绝缘膜桥接在一个阴极电极上，并且另一个阳极电极形成为通过绝缘膜桥接在另一个阴极电极上。

公开(公告)号：US06822990B2

公开(公告)日：2004-11-23

申请号：US10129550

申请日：2002-05-08

申请人： Takeshi Koiso ,  Tsuyoshi Fujimoto

发明人： Takeshi Koiso ,  Tsuyoshi Fujimoto

IPC分类号： H01S500

CPC分类号： H01S5/16 ,  B82Y20/00 ,  H01S5/164 ,  H01S5/168 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/34313 ,  H01S2304/04

摘要： A semiconductor laser device comprises first current blocking layers formed to define a stripe-shaped current injected region extending in the direction in a front facet from which a laser light is emitted and a rear facet opposing thereto are connected, and a second current blocking layer formed to transverse the stripe-shaped current injected region in the vicinity of the front facet. The first current blocking layers and the second current blocking layer are made of the same layer. Accordingly, a current blocking structure is provided in the vicinity of the facet with the structure which is easily formed, causes no damage on the semiconductor laser device, and minimizes the property degradation, thereby a high facet COD level and high reliability in long-term continuous operations can be achieved.

摘要翻译： 一种半导体激光器件包括：第一电流阻挡层，其形成为限定沿着前面的方向延伸的条状电流注入区域，激光从该方向发射，并且与之相对的后端面连接，形成第二电流阻挡层 横向前端附近的条纹电流注入区域。 第一电流阻挡层和第二电流阻挡层由相同的层制成。因此，在小面附近提供电流阻挡结构，其结构易于形成，不会对半导体激光器件造成损坏，并且 降低性能下降，从而可以实现高端的COD水平和长期连续操作的高可靠性。

公开(公告)号：US5764668A

公开(公告)日：1998-06-09

申请号：US363834

申请日：1994-12-27

申请人： Shoji Ishizaka ,  Kiyofumi Muro ,  Tsuyoshi Fujimoto ,  Yoshikazu Yamada

发明人： Shoji Ishizaka ,  Kiyofumi Muro ,  Tsuyoshi Fujimoto ,  Yoshikazu Yamada

IPC分类号： H01S5/20 ,  H01S5/32 ,  H01S5/34 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S2301/18 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/3409

摘要： To overcome the dilemma on device design in control of waveguide mode experienced in the conventional weak wave-guide-laser and SCH structure laser, realize higher output and lower dispersion of radiation beam, and improve the waveguide mode, on both sides of an active layer, carrier blocking layers for reducing the waveguide function of the active layer are provided, and waveguide layers are provided on both outer sides of the carrier blocking layers, and cladding layers are provided on both outer sides of the waveguide layers, the active layer is lamination of side barrier layers and a quantum well layer sandwiched therebetween, or side barrier layers, and a quantum well layer and a barrier layer sandwiched therebetween, the composition of the quantum well layer is Ga.sub.y In.sub.1-y As (0.6

摘要翻译： 为了克服传统弱波导激光和SCH结构激光器中经受的波导模式控制中的器件设计困境，实现了更高的输出和更低的辐射束色散，并改善了有源层两侧的波导模式 提供用于降低有源层的波导功能的载流子阻挡层，并且在载流子阻挡层的两个外侧设置波导层，并且在波导层的两个外侧设置包层，活性层为层叠 的侧面阻挡层和夹在其间的量子阱层或侧面阻挡层以及夹在其间的量子阱层和阻挡层，量子阱层的组成为GayIn1-yAs（0.6

公开(公告)号：US09363405B2

公开(公告)日：2016-06-07

申请号：US14193216

申请日：2014-02-28

申请人： Akihiro Iwamatsu ,  Tsuyoshi Fujimoto

发明人： Akihiro Iwamatsu ,  Tsuyoshi Fujimoto

IPC分类号： H04N1/028

CPC分类号： H04N1/02825 ,  H04N1/0284

摘要： A light irradiation system for irradiating light to an irradiation area extending in a main scanning direction of a document face when placed on an image scanning apparatus includes a light source; a light guiding member to guide light emitted from the light source; and a reflector to reflect a part of light exiting from the light guiding member to the document face. The irradiation area is irradiated by the reflection light reflected by the reflector and a direct light exiting from the light guiding member without reflection at the reflector. The light guiding member includes an incidence surface where the light from the light source enters; and an exit surface where the light entered from the incidence surface exits. The reflector is disposed at a position in a direction that light intensity of light emitting from the light source becomes the strongest.

摘要翻译： 当放置在图像扫描装置上时，用于将光照射到在文件面的主扫描方向上延伸的照射区域的光照射系统包括光源; 导光构件，用于引导从光源发射的光; 以及反射器，用于将从导光构件出射的一部分光反射到文件面。 照射区域由反射器反射的反射光和从反射器反射而从导光部件射出的直接光照射。 导光构件包括来自光源的光入射的入射表面; 以及从入射面入射的光离开的出射面。 反射器设置在从光源发出的光的光强度变得最强的方向的位置。

公开(公告)号：US08780416B2

公开(公告)日：2014-07-15

申请号：US13678936

申请日：2012-11-16

申请人： Tokiko Inoue ,  Mitsuru Nakajima ,  Tsuyoshi Fujimoto ,  Akihiro Iwamatsu ,  Chihiro Tanaka

发明人： Tokiko Inoue ,  Mitsuru Nakajima ,  Tsuyoshi Fujimoto ,  Akihiro Iwamatsu ,  Chihiro Tanaka

IPC分类号： H04N1/04

CPC分类号： G02B6/0011 ,  G03G15/04054 ,  H04N1/02481 ,  H04N1/02855 ,  H04N1/02865 ,  H04N2201/02435

摘要： A light irradiator including multiple point light sources arranged in a straight line, a light-transmissive light guiding member provided in front of the point light sources in an emission direction of beams of light emitted from the point light sources, the light guiding member guiding the beams of light in a predetermined direction toward a surface to be irradiated; and two or more protrusions protruding toward the point light sources, provided on a light entering surface of the light guiding member and arranged in the same direction as the point light sources. The light guiding member and the point light sources are positioned such that a distance between the protrusions provided to the light guiding member and irradiation surfaces of the point light sources is equal at two positions.

摘要翻译： 一种包括以直线排列的多点光源的光照射器，沿点光源发射的光束的发射方向设置在点光源前面的透光导光部件，导光部件引导 沿预定方向的光束朝向待照射的表面; 以及设置在导光部件的光入射面上且与点光源相同的方向配置的朝向点光源突出的两个以上的突起。 导光构件和点光源被定位成使得提供给导光构件的突起和点光源的照射表面之间的距离在两个位置处相等。

公开(公告)号：US07778298B2

公开(公告)日：2010-08-17

申请号：US11887412

申请日：2006-03-30

申请人： Tsuyoshi Fujimoto

发明人： Tsuyoshi Fujimoto

IPC分类号： H01S5/00

CPC分类号： H01S5/223 ,  H01S5/0021 ,  H01S5/2206 ,  H01S5/2237

摘要： An object of the invention is to achieve a high output gain waveguide semiconductor laser device exhibiting high reliability by suppressing growth of DLD. A semiconductor laser device includes a semiconductor laser structure of a gain waveguide formed on a semiconductor substrate in which two grooves extending in an oscillation direction thereof are formed, wherein a current injection stripe is arranged between the two grooves. Preferably, a quantum well constituting an active layer of the semiconductor laser device is composed of GaAs.

摘要翻译： 本发明的一个目的是通过抑制<100> DLD的生长来实现具有高可靠性的高输出增益波导半导体激光器件。 半导体激光器件包括形成在半导体衬底上的增益波导的半导体激光器结构，其中形成有沿其振荡方向延伸的两个沟槽，其中在两个沟槽之间布置有电流注入条纹。 优选地，构成半导体激光器件的有源层的量子阱由GaAs构成。

公开(公告)号：US20090115106A1

公开(公告)日：2009-05-07

申请号：US11918972

申请日：2005-09-13

申请人： Yoshifumi Itabashi ,  Yoshihiro Jizo ,  Akihiro Fujita ,  Keizou Yoshikawa ,  Tsuyoshi Fujimoto ,  Hiromori Ishihara ,  Nobuhiko Mizuno ,  Futoshi Yonekawa ,  Tomomi Hasegawa

发明人： Yoshifumi Itabashi ,  Yoshihiro Jizo ,  Akihiro Fujita ,  Keizou Yoshikawa ,  Tsuyoshi Fujimoto ,  Hiromori Ishihara ,  Nobuhiko Mizuno ,  Futoshi Yonekawa ,  Tomomi Hasegawa

IPC分类号： B29C45/00

CPC分类号： B29C45/14065 ,  B29C33/123 ,  B29C2045/1409

摘要： A process for producing a molding having an embedded member which comprises: a first step in which a mold (1) having pins (3) which extend from the outside to the inside of the mold and can be withdrawn outward is heated to a given temperature; a second step in which a member (2) to be embedded is held in a given position within the mold by supporting the member, including an upper part thereof, with the pins (3); a third step in which a thermoplastic resin is packed through a gate (1d) first into that part of the cavity of the mold (1) which is located under the member to be embedded to thereby cause the thermoplastic resin to press the member against the pin (3) located in an upper part of the mold; a fourth step in which the thermoplastic resin is packed into the remaining part of the cavity of the mold (1); and a fifth step in which the pins (3) are withdrawn successively from the lower side of the mold before cooling to a temperature at which the thermoplastic resin solidifies and loses its flowability.

摘要翻译： 一种具有嵌入构件的模制品的制造方法，包括：第一步骤，其中具有从模具的外部延伸到内部并可向外取出的销（3）的模具（1）被加热至给定温度 ; 第二步骤，其中通过将包括其上部的构件与所述销（3）支撑而将待嵌入的构件（2）保持在所述模具内的给定位置; 第三步骤，其中热塑性树脂首先通过浇口（1d）填充到位于待嵌入构件下方的模具（1）的空腔的那部分中，从而使热塑性树脂按压该构件 销（3）位于模具的上部; 第四步，将热塑性树脂填充到模具（1）的空腔的剩余部分中; 以及在冷却至热塑性树脂固化并失去其流动性的温度之前，将销（3）从模具的下侧依次取出的第五步骤。

公开(公告)号：US20090078150A1

公开(公告)日：2009-03-26

申请号：US11912242

申请日：2006-03-30

申请人： Tomomi Hasegawa ,  Futoshi Yonekawa ,  Akihiro Fujita ,  Yoshihiro Jizo ,  Yoshifumi Itabashi ,  Keizo Yoshikawa ,  Tsuyoshi Fujimoto ,  Hiromori Ishihara ,  Nobuhiko Mizuno

发明人： Tomomi Hasegawa ,  Futoshi Yonekawa ,  Akihiro Fujita ,  Yoshihiro Jizo ,  Yoshifumi Itabashi ,  Keizo Yoshikawa ,  Tsuyoshi Fujimoto ,  Hiromori Ishihara ,  Nobuhiko Mizuno

IPC分类号： B60L13/04 ,  B29C45/14

CPC分类号： B60L13/04 ,  B60L2200/26 ,  C08K3/40 ,  C08L21/00 ,  C08L81/02 ,  H01F7/20 ,  H01F41/04 ,  H02K3/30 ,  H02K41/02

摘要： A ground coil device for a magnetic levitation railway that can be manufactured with a high productivity and exhibit less fluctuation in strength, reduced weight, and good recyclability, and a process for manufacturing the device. The ground coil device includes a coil conductor covered with a thermoplastic resin molding material containing 100 parts by mass of a thermoplastic resin, from 20 to 200 parts by mass of an inorganic filler, and from 0 to 25 parts by mass of an elastomer. A process for producing the ground coil device for magnetic levitation railway includes filling the thermoplastic resin molding material into a cavity of a metal mold into which the coil conductor is previously inserted, by an injection molding method, to obtain an integrally molded product.

摘要翻译： 一种用于磁悬浮铁路的接地线圈装置，其可以以高生产率制造，并且具有较小的强度波动，减轻重量和良好的可回收性，以及该装置的制造方法。 接地线圈装置包括被热塑性树脂成形材料覆盖的线圈导体，该热塑性树脂成型材料含有100质量份热塑性树脂，20〜200质量份的无机填料和0〜25质量份的弹性体。 用于制造用于磁悬浮铁路的接地线圈装置的方法包括通过注射成型方法将热塑性树脂模制材料填充到预先插入线圈导体的金属模的空腔中，以获得一体模制产品。

公开(公告)号：US06847667B2

公开(公告)日：2005-01-25

申请号：US10802753

申请日：2004-03-18

申请人： Atsushi Ohkubo ,  Satoru Okada ,  Tsuyoshi Fujimoto ,  Takeshi Koiso ,  Kiyofumi Muro ,  Michio Ohkubo ,  Yutaka Ohki

发明人： Atsushi Ohkubo ,  Satoru Okada ,  Tsuyoshi Fujimoto ,  Takeshi Koiso ,  Kiyofumi Muro ,  Michio Ohkubo ,  Yutaka Ohki

IPC分类号： H01S5/022 ,  H01S5/065 ,  H01S5/14 ,  H01S5/34 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/02208 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/0652 ,  H01S5/0656 ,  H01S5/146 ,  H01S5/34

摘要： A semiconductor laser device emitting a laser beam having stable emitting wavelength and a multimode spectrum is provided. The semiconductor laser device is a Fabry-Perot type semiconductor laser device having a layer structure including an active layer of a quantum well structure, and emitting a laser beam having wavelength stabilized by an action of return light and having a multimode spectrum, wherein each well layer satisfies relation: Γ/d≦1.3×10−3 nm−1 where Γ and d(nm) are an optical confinement factor and a thickness of a well layer, respectively.

摘要翻译： 提供了发射具有稳定发射波长和多模光谱的激光束的半导体激光装置。 半导体激光器件是具有包括量子阱结构的有源层的层结构的法布里 - 珀罗型半导体激光器件，并且发射具有通过返回光的作用而具有波长稳定并且具有多模光谱的波长的激光束，其中每个阱 层满足关系：其中Gamma和d（nm）分别是光限制因子和阱层的厚度。

公开(公告)号：USRE36431E

公开(公告)日：1999-12-07

申请号：US971106

申请日：1997-11-14

申请人： Kiyofumi Muro ,  Tsuyoshi Fujimoto ,  Yuji Yoshida ,  Yoshikazu Yamada ,  Shoji Ishizaka

发明人： Kiyofumi Muro ,  Tsuyoshi Fujimoto ,  Yuji Yoshida ,  Yoshikazu Yamada ,  Shoji Ishizaka

IPC分类号： H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： H01S5/20 ,  B82Y20/00 ,  H01S5/34 ,  H01S2301/18 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/32308 ,  H01S5/3421 ,  H01S5/3428 ,  H01S5/3432

摘要： A semiconductor laser of this invention, having a structure of an element composed of: carrier block layers, formed bilaterally externally of an active layer in section which is formed in the vertical direction from the surface of the element, for reducing a light guiding function of the active layer; wave guide layers provided bilaterally externally of said carrier block layers and clad layers provided so that the wave guide layers are sandwiched in between the clad layers. This invention overcomes a dilemma inherent in the conventional weakly guiding laser and LOC structured laser in terms of designing the device for controlling a guided mode. The present invention also solves the problems in terms of attaining higher outputting and a low dispersion of the radiation beams and improving a beam profile.