公开(公告)号：US5994007A

公开(公告)日：1999-11-30

申请号：US213373

申请日：1998-12-17

申请人： Yasuhiko Sato ,  Atsushi Ando ,  Yasunobu Onishi ,  Yoshihiko Nakano ,  Shuji Hayase ,  Rikako Kani

发明人： Yasuhiko Sato ,  Atsushi Ando ,  Yasunobu Onishi ,  Yoshihiko Nakano ,  Shuji Hayase ,  Rikako Kani

IPC分类号： G03F7/09 ,  G03F7/20 ,  G03F9/00

CPC分类号： G03F7/203 ,  G03F7/091 ,  G03F7/093 ,  Y10S430/143

摘要： Disclosed is a pattern forming method, comprising the steps of providing a resist film, applying a light exposure to the resist film, with a film directly above the resist film and another film directly below the resist film being made insulative, applying a charged beam exposure to the resist film, with the film directly above the resist film and the other film directly below the resist film being made conductive, and developing the resist film to form a resist pattern.

摘要翻译： 公开了一种图案形成方法，包括以下步骤：提供抗蚀剂膜，对抗蚀剂膜施加曝光，直接在抗蚀剂膜上方的膜上，并且将抗蚀剂膜正下方的另一个膜制成绝缘体，施加带电的束曝光 将抗蚀膜直接在抗蚀剂膜上方的膜和抗蚀剂膜正下方的另一个膜导电到抗蚀剂膜上，并且使抗蚀剂膜显影以形成抗蚀剂图案。

公开(公告)号：US20060127815A1

公开(公告)日：2006-06-15

申请号：US11296480

申请日：2005-12-08

申请人： Yasuhiko Sato ,  Yasunobu Onishi

发明人： Yasuhiko Sato ,  Yasunobu Onishi

IPC分类号： G03F7/00

CPC分类号： G03F7/094 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/093 ,  G03F7/11 ,  G03F7/115

摘要： According to an aspect of the invention, there is provided a pattern forming method comprising forming a first resist film on a film to be worked formed on a semiconductor substrate, forming a second resist film on the first resist film, forming a resist pattern from the second resist film, forming an overcoat film containing a metal element or a semi-conducting element on the resist pattern, insolubilizing, in a predetermined solvent, a portion of the overcoat film at a predetermined distance from an interface between the overcoat film and the resist pattern, removing, with the solvent, a portion of the overcoat film soluble in the solvent to form an overcoat film pattern, transferring the overcoat film pattern to the first resist film to form a lower-layer resist film pattern, and transferring the lower-layer resist film pattern to the film to be worked to form a pattern on the film.

摘要翻译： 根据本发明的一个方面，提供了一种图案形成方法，包括在半导体衬底上形成的待加工膜上形成第一抗蚀剂膜，在第一抗蚀剂膜上形成第二抗蚀剂膜，从第一抗蚀剂图案形成抗蚀剂图案 在抗蚀剂图案上形成含有金属元素或半导体元件的外涂膜，在规定的溶剂中不溶解从外涂膜与抗蚀剂之间的界面预定距离的一部分覆盖膜 用溶剂除去一部分可溶于溶剂的外涂膜形成外涂膜图案，将覆盖膜图案转印到第一抗蚀剂膜上以形成下层抗蚀剂膜图案， 层抗蚀剂膜图案到待加工的膜以在膜上形成图案。

公开(公告)号：US06576562B2

公开(公告)日：2003-06-10

申请号：US10014459

申请日：2001-12-14

申请人： Junko Ohuchi ,  Yasuhiko Sato ,  Eishi Shiobara ,  Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Yasunobu Onishi

发明人： Junko Ohuchi ,  Yasuhiko Sato ,  Eishi Shiobara ,  Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Yasunobu Onishi

IPC分类号： H01L21302

CPC分类号： H01L21/76808 ,  H01L21/0271 ,  H01L21/288 ,  H01L21/31144 ,  H01L21/32051

摘要： A manufacturing method of semiconductor device comprises forming a mask material having an aromatic ring and carbon content of 80 wt % or more on an object, forming a mask material pattern by etching the mask material to a desired pattern, and etching the object to transfer the mask material pattern as a mask to the object.

公开(公告)号：US06420271B2

公开(公告)日：2002-07-16

申请号：US09814839

申请日：2001-03-23

申请人： Yasuhiko Sato ,  Eishi Shiobara ,  Motoyuki Sato ,  Yasunobu Onishi ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Junko Ohuchi ,  Hisataka Hayashi

发明人： Yasuhiko Sato ,  Eishi Shiobara ,  Motoyuki Sato ,  Yasunobu Onishi ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Junko Ohuchi ,  Hisataka Hayashi

IPC分类号： H01L214763

CPC分类号： H01L21/31144 ,  G03F7/085 ,  G03F7/09 ,  H01L21/3081 ,  H01L21/32139

摘要： A method of forming a pattern comprising the steps of, forming a lower film on a substrate, the lower film being a film containing carbon atom at a ratio of 80 wt % or more, or a vapor phase deposition film, either applying an adhesion-promoting treatment to a surface of the lower film or forming an adhesion-promoting on the lower film, forming an intermediate film on a surface of the lower film, forming a resist film on the intermediate film, forming a resist pattern by conducting a patterning exposure of the resist film, forming an intermediate film pattern by transferring the resist pattern to the intermediate film, and forming a lower film pattern by transferring the intermediate film pattern to the lower film.

摘要翻译： 一种形成图案的方法，包括以下步骤：在基底上形成下膜，下膜是含有80重量％以上的碳原子的膜或气相沉积膜， 促进对下膜的表面的处理或在下膜上形成粘合促进，在下膜的表面上形成中间膜，在中间膜上形成抗蚀剂膜，通过进行图案曝光形成抗蚀剂图案 的抗蚀剂膜，通过将抗蚀剂图案转印到中间膜而形成中间膜图案，并通过将中间膜图案转印到下膜来形成下膜图案。

公开(公告)号：USRE35821E

公开(公告)日：1998-06-09

申请号：US639973

申请日：1996-04-29

申请人： Hirokazu Niki ,  Rumiko Hayase ,  Naohiko Oyasato ,  Yasunobu Onishi ,  Akitoshi Kumagae ,  Kazuo Sato ,  Masataka Miyamura ,  Yoshihito Kobayashi

发明人： Hirokazu Niki ,  Rumiko Hayase ,  Naohiko Oyasato ,  Yasunobu Onishi ,  Akitoshi Kumagae ,  Kazuo Sato ,  Masataka Miyamura ,  Yoshihito Kobayashi

IPC分类号： G03F7/26 ,  G03F7/004 ,  G03F7/039 ,  G03F7/09 ,  G03F7/11 ,  G03F7/38 ,  H01L21/027 ,  G03C5/00

CPC分类号： G03F7/09 ,  G03F7/11 ,  G03F7/0045

摘要： A radiation-sensitive layer comprising as a main component a radiation-sensitive composition containing a compound capable of generating an acid when exposed to a chemical radiation and a compound having at least one linkage decomposable by an acid is formed on a substrate. An acidic coating layer is formed on the radiation-sensitive layer. The radiation-sensitive layer and the acidic coating layer are pattern-exposed to a chemical radiation. The radiation-sensitive layer and the acidic coating layer are baked and developed by using an aqueous alkaline solution to obtain a pattern comprising lines and spaces, each having a predetermined width. A fine pattern of a rectangular sectional shape can be formed without producing eaves caused by a surface inhibition layer layer, which is produced on the film surface.

摘要翻译： 一种辐射敏感层，其包含作为主要成分的含有当暴露于化学辐射时能够产生酸的化合物的辐射敏感性组合物和具有至少一个可被酸分解的键的化合物。 在辐射敏感层上形成酸性涂层。 辐射敏感层和酸性涂层图案暴露于化学辐射。 通过使用碱性水溶液来烘烤和显影辐射敏感层和酸性涂层，以获得每个具有预定宽度的线和间隔的图案。 可以形成矩形截面形状的精细图案，而不会在膜表面上产生由表面抑制层形成的檐。

公开(公告)号：US5091282A

公开(公告)日：1992-02-25

申请号：US504300

申请日：1990-04-03

申请人： Yasunobu Onishi ,  Hirokazu Niki ,  Yoshihito Kobayashi ,  Rumiko Hayase ,  Toru Ushirogouchi

发明人： Yasunobu Onishi ,  Hirokazu Niki ,  Yoshihito Kobayashi ,  Rumiko Hayase ,  Toru Ushirogouchi

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/075

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/0755 ,  G03F7/0758 ,  Y10S430/124 ,  Y10S430/125

摘要： This invention includes a photosensitive composition containing an alkali-soluble resin and a compound represented by formula (I), (II) or (III) described in the claims and the specification, a photosensitive composition containing an alkali-soluble polymer, a compound represented by formula (IV) described in the claims and the specification and a basic compound, and a photosensitive composition containing an alkali-soluble polymer, a compound represented by formula (VI) described in the claims and the specification and a compound which produces an acid upon radiation of light. A pattern formation method using these photosensitive compositions includes the steps of dissolving any one of the above photosensitive compositions in an organic solvent to prepare a photosensitive resin solution, coating the photosensitive resin solution on a substrate to form a photosensitive resin layer on the substrate, pattern-exposing the photosensitive resin layer, and developing the exposed resin layer with an aqueous alkaline solution. When the first or second photosensitive composition is used, a good pattern can also be formed by a method including the steps of dissolving either the first or second photosensitive composition in an organic solvent to prepare a photosensitive resin solution, coating the photosensitive resin solution on a substrate to form a photosensitive resin layer on the substrate, pattern-exposing the photosensitive resin layer, heating the pattern-exposed resin layer, exposing the entire surface of the heated resin layer, and developing the entirely exposed resin layer with an aqueous alkaline solution.

公开(公告)号：US4871646A

公开(公告)日：1989-10-03

申请号：US193688

申请日：1988-05-13

申请人： Shizu Hayase ,  Rumiko Horiguchi ,  Yasunobu Onishi ,  Toru Ushirogouchi

发明人： Shizu Hayase ,  Rumiko Horiguchi ,  Yasunobu Onishi ,  Toru Ushirogouchi

IPC分类号： G03C1/72 ,  C08G77/00 ,  C08G77/02 ,  C08G77/48 ,  C08G77/60 ,  C08L83/16 ,  G03C1/00 ,  G03C1/675 ,  G03F7/039 ,  G03F7/075 ,  G03F7/11 ,  H01L21/027 ,  H01L21/30

CPC分类号： C08G77/60 ,  C08L83/16 ,  G03F7/0754

摘要： Disclosed are a polysilane containing a unit represented by the following formulas I, II, or III, and a photosensitive composition consisting of the polysilane. ##STR1##

摘要翻译： 公开了含有由下式I，II或III表示的单元的聚硅烷和由聚硅烷组成的感光组合物。 III。影像> I II III

公开(公告)号：US4822716A

公开(公告)日：1989-04-18

申请号：US938874

申请日：1986-12-08

申请人： Yasunobu Onishi ,  Shuji Hayase ,  Rumiko Horiguchi ,  Akiko Hirao

发明人： Yasunobu Onishi ,  Shuji Hayase ,  Rumiko Horiguchi ,  Akiko Hirao

IPC分类号： C08G77/14 ,  C08G77/26 ,  C08G77/48 ,  C08G77/60 ,  C08L83/16 ,  G03F7/075 ,  G03C1/52

CPC分类号： C08L83/16 ,  C08G77/14 ,  C08G77/26 ,  C08G77/48 ,  C08G77/60 ,  G03F7/0754 ,  G03F7/0757

摘要： The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrobenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps.

摘要翻译： 本发明的聚硅烷和聚硅氧烷是在主链中含有硅并且在侧链中含有碱性可溶性基团如苯酚基羟基和羧基的聚合物。 本发明的一种硅氧烷抗蚀剂材料包含上述聚硅烷或聚硅氧烷。 本发明的另一种硅氧烷抗蚀剂材料含有上述聚硅烷或聚硅氧烷和适当的感光剂。 本发明的另一种硅氧烷抗蚀剂材料不含上述光敏剂，代替其中含有通过主链中的硅氧烷键具有紫外线等感光性的基团。 作为具有这种光敏性的物质，可以提及例如当用紫外线照射时呈现碱溶性的邻硝基苄基甲硅烷基。 因此，本发明的有机硅抗蚀剂材料，特别是第二和第三有机硅抗蚀剂材料是碱显影的，并且还具有优异的耐氧等离子体性。 因此，它们可以用作双层抗蚀剂系统中的顶层膜，使得可以形成非常精细的抗蚀剂图案，并且具有最少数量的加工步骤。

公开(公告)号：US4465752A

公开(公告)日：1984-08-14

申请号：US376101

申请日：1982-05-07

申请人： Masami Sugiuchi ,  Masataka Miyamura ,  Yasunobu Onishi

发明人： Masami Sugiuchi ,  Masataka Miyamura ,  Yasunobu Onishi

IPC分类号： C08F20/00 ,  C08F20/38 ,  C08F30/00 ,  C08F30/04 ,  C08L1/00 ,  C08L27/00 ,  C08L33/00 ,  C08L33/02 ,  C08L43/00 ,  G03G5/00 ,  G03G5/06 ,  G03G5/07

CPC分类号： G03G5/06 ,  C08F20/38 ,  G03G5/071

摘要： Disclosed are organic photoconductive compositions for use in electrophotography, comprising a polymer containing as main units a naphthalene derivative and/or a naphthacene derivative; and an electron acceptor and/or a sensitizer.

摘要翻译： 公开了用于电子照相术的有机光电导组合物，其包含以萘衍生物和/或并四苯衍生物为主要单元的聚合物; 和电子受体和/或敏化剂。

公开(公告)号：US20110039214A1

公开(公告)日：2011-02-17

申请号：US12857710

申请日：2010-08-17

申请人： Shinichi ITO ,  Kentaro Matsunaga ,  Daisuke Kawamura ,  Yasunobu Onishi

发明人： Shinichi ITO ,  Kentaro Matsunaga ,  Daisuke Kawamura ,  Yasunobu Onishi

IPC分类号： G03F7/20 ,  H01L21/308

CPC分类号： G03F7/2041 ,  G03F7/11 ,  Y10S430/162

摘要： A pattern forming method includes forming a photo resist film on a film to be processed, forming a protective film for protecting the photo resist film from an immersion liquid on the photo resist film by coating method, performing immersion exposure selectively to a region of part of the photo resist film via the immersion liquid, the immersion liquid being supplied onto the photo resist film, removing a residual substance including an affinitive part for the immersion liquid from the protective film after the forming the protective film and before the performing immersion exposure selectively to the region of part of the photo resist film, removing the protective film, and forming a pattern comprising the photo resist film by selectively removing an exposed region or a non-exposed region of the photo resist film.

摘要翻译： 图案形成方法包括在被处理膜上形成光致抗蚀剂膜，通过涂布法在光致抗蚀剂膜上形成用于保护光致抗蚀剂膜的浸渍液的保护膜，选择性地进行部分浸渍曝光 通过浸渍液将该光致抗蚀剂膜，浸渍液体供给到光致抗蚀剂膜上，在形成保护膜之后，在进行浸渍曝光前，选择性地除去包含浸渍液的残留物质的残留物质， 通过选择性地去除光致抗蚀剂膜的曝光区域或未曝光区域，去除保护膜，以及形成包括光致抗蚀剂膜的图案。