公开(公告)号：US4760558A

公开(公告)日：1988-07-26

申请号：US742617

申请日：1985-06-07

Applicant: Jean L. Berger ,  Louis Brissot ,  Yvon Cazaux

Inventor： Jean L. Berger ,  Louis Brissot ,  Yvon Cazaux

IPC: G11B20/02 ,  G11C27/04 ,  H01L27/105 ,  H01L27/148 ,  H01L29/78 ,  G11C11/34 ,  H04N3/14 ,  H04N5/335

CPC classification number: H01L27/1057 ,  G11C27/04

Abstract: An analog image memory device using charge transfer and comprising:a memory zone of N lines of M memory points, each memory point being formed by the integration on the same semiconductor substrate of an MIS capacity separated from a diode by a screen grid,means for selecting each memory point,means for writing in each memory point a charge amount corresponding to the analog signal to be stored andmeans for reading the memory zone line by line after writing.

Abstract translation: 一种使用电荷转移的模拟图像存储器件，包括：M个存储点的N行的存储区，每个存储点通过在通过屏幕栅极与二极管分离的MIS容量的相同半导体衬底上的积分形成; 选择每个存储点，用于在每个存储器中写入与要存储的模拟信号相对应的电荷量的装置，以及用于在写入之后逐行读取存储区的装置。

公开(公告)号：US4684993A

公开(公告)日：1987-08-04

申请号：US869133

申请日：1986-05-30

Applicant: Jean-Luc Berger ,  Louis Brissot ,  Yvon Cazaux

Inventor： Jean-Luc Berger ,  Louis Brissot ,  Yvon Cazaux

IPC: H01L27/146 ,  H04N5/359 ,  H04N5/372 ,  H04N3/14

CPC classification number: H01L27/14643 ,  H04N3/1525 ,  H04N3/1568 ,  H04N3/1575

Abstract: The present invention concerns an analysis process of a line transfer photosensitive device.The charge-signal and the charge noise transfers from the columns towards the memory have the same duration and are made by using a same training charge, stored in memory, that must be at least sufficient to allow to pass in high inversion at the beginning of the transfer from the columns towards the memory. The transfers of the charge-signal and the charge-noise from the memory towards the read-out register or the drain have the same duration and are made by using training charges at least sufficient to allow to pass in high inversion at the beginning of the transfer. These training charges are read with the charge-signal or collected with the charge-noise.

Abstract translation: 本发明涉及一种线转印感光装置的分析方法。 从列到存储器的充电信号和充电噪声传输具有相同的持续时间，并且通过使用存储在存储器中的相同训练电荷来进行，其必须至少足以允许在开始时通过高反转 从列转移到记忆体。 电荷信号和充电噪声从存储器向读出寄存器或漏极的传输具有相同的持续时间，并且通过使用训练电荷至少足以允许在开始时的高反转中通过 转让。 这些培训费用是用充电信号读取的或用充电噪声收集的。

公开(公告)号：US09191597B2

公开(公告)日：2015-11-17

申请号：US13605685

申请日：2012-09-06

Applicant: Frédéric Barbier ,  Yvon Cazaux

Inventor： Frédéric Barbier ,  Yvon Cazaux

IPC: H04N3/14 ,  H04N5/3745 ,  H04N5/359

CPC classification number: H04N5/3745 ,  H04N5/3597

Abstract: A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.

Abstract translation: 一种用于控制图像传感器的装置，包括至少一个感光单元，该感光单元包括经由第一MOS晶体管能够放电到感测节点的光电二极管，所述感测节点连接到其源极连接到处理系统的第二MOS晶体管的栅极 。 该器件包括偏置电路，其能够在将光电二极管放电到感测节点期间增加源极的电压。

公开(公告)号：US07687872B2

公开(公告)日：2010-03-30

申请号：US11880253

申请日：2007-07-20

Applicant: Yvon Cazaux ,  Philippe Coronel ,  Claire Fenouillet-Béranger ,  François Roy

Inventor： Yvon Cazaux ,  Philippe Coronel ,  Claire Fenouillet-Béranger ,  François Roy

IPC: H01L31/00

CPC classification number: H01L27/14634 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14687

Abstract: An image sensor including photosensitive cells including photodiodes and at least one additional circuit with a significant heat dissipation including transistors. The image sensor is made in monolithic form and includes a layer of a semiconductor material having first and second opposite surfaces and including, on the first surface side, first regions corresponding to the power terminals of the transistors, the lighting of the image sensor being intended to be performed on the second surface side; a stack of insulating layers covering the first surface; a thermally conductive reinforcement covering the stack on the side opposite to the layer; and thermally conductive vias connecting the layer to the reinforcement.

Abstract translation: 包括包括光电二极管的感光单元和至少一个包括晶体管的显着散热的附加电路的图像传感器。 图像传感器制成单片形式并且包括具有第一和第二相对表面的半导体材料层，并且在第一表面侧包括对应于晶体管的功率端子的第一区域，图像传感器的点亮 在第二表面侧进行; 覆盖第一表面的一叠绝缘层; 导热性增强材料，覆盖层与该层相反的一侧; 以及将层连接到加强件的导热通孔。

公开(公告)号：US20080017946A1

公开(公告)日：2008-01-24

申请号：US11880253

申请日：2007-07-20

Applicant: Yvon Cazaux ,  Philippe Coronel ,  Claire Fenouillet-Beranger ,  Francois Roy

Inventor： Yvon Cazaux ,  Philippe Coronel ,  Claire Fenouillet-Beranger ,  Francois Roy

IPC: H01L31/00 ,  H01L21/00

CPC classification number: H01L27/14634 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14687

Abstract: An image sensor including photosensitive cells including photodiodes and at least one additional circuit with a significant heat dissipation including transistors. The image sensor is made in monolithic form and includes a layer of a semiconductor material having first and second opposite surfaces and including, on the first surface side, first regions corresponding to the power terminals of the transistors, the lighting of the image sensor being intended to be performed on the second surface side; a stack of insulating layers covering the first surface; a thermally conductive reinforcement covering the stack on the side opposite to the layer; and thermally conductive vias connecting the layer to the reinforcement.

Abstract translation: 包括包括光电二极管的感光单元和至少一个包括晶体管的显着散热的附加电路的图像传感器。 图像传感器制成单片形式并且包括具有第一和第二相对表面的半导体材料层，并且在第一表面侧包括对应于晶体管的电源端子的第一区域，图像传感器的点亮 在第二表面侧进行; 覆盖第一表面的一叠绝缘层; 导热性增强材料，覆盖层与该层相反的一侧; 以及将层连接到加强件的导热通孔。

公开(公告)号：US20070018075A1

公开(公告)日：2007-01-25

申请号：US11490308

申请日：2006-07-20

Applicant: Yvon Cazaux ,  Didier Herault

Inventor： Yvon Cazaux ,  Didier Herault

IPC: H01L27/00

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/1469

Abstract: An image sensor including a pixel assembly, each pixel including a photodiode and an access transistor connected to a read circuit, the photodiode and the access transistor being formed in and above a first semiconductor substrate, all or part of the read circuit being formed in a second semiconductor substrate, the second substrate being placed above the first substrate and separated therefrom by an intermediary insulating layer covering the access transistor, the photodiode receiving incident photons on its lower surface side opposite to the intermediary insulating layer.

Abstract translation: 一种图像传感器，包括像素组件，每个像素包括光电二极管和连接到读取电路的存取晶体管，所述光电二极管和存取晶体管形成在第一半导体衬底中和上方，全部或部分读取电路形成为 第二半导体衬底，第二衬底被放置在第一衬底之上，并通过覆盖存取晶体管的中间绝缘层与其隔开，光电二极管在其与中间绝缘层相对的下表面侧接收入射光子。

公开(公告)号：US5600369A

公开(公告)日：1997-02-04

申请号：US432772

申请日：1995-05-02

Applicant: Yvon Cazaux ,  Jean-Louis Coutures ,  Pierre Dautriche ,  Gilles Boucharlat

Inventor： Yvon Cazaux ,  Jean-Louis Coutures ,  Pierre Dautriche ,  Gilles Boucharlat

IPC: H01L27/148 ,  H04N5/335 ,  H04N5/372 ,  H04N5/376 ,  H04N5/378

CPC classification number: H04N5/335 ,  H01L27/14831 ,  H04N3/1525

Abstract: A method of detecting electromagnetic radiation imparted onto a matrix of photosensitive photomos networks in which pixels of each photomos network are simultaneously exposed to electromagnetic radiation source for a predetermined period of time. Thereafter, transfer signals are applied to each photomos pixel and accumulated charges corresponding to the strength of the radiation imparted onto the pixels are transferred in a columnwise fashion to the end of each column of the photomos networks. The charges are summed at the end of the columns and placed in a reading register. The charges in the reading register of each photomos network are summed and a signal is output corresponding to the strength of the electromagnetic radiation imparted onto the photomos network.

Abstract translation: 检测施加到光敏光网络的矩阵上的电磁辐射的方法，其中每个光网络的像素同时暴露于电磁辐射源一段预定时间段。 此后，传送信号被施加到每个光像像素，并且与施加到像素上的辐射的强度对应的累积电荷以列方式传送到光电网络的每列的末端。 这些费用在列的末尾相加并放置在读取寄存器中。 将每个光网络的读取寄存器中的电荷相加，并且相应于施加到光电网络上的电磁辐射的强度输出信号。

公开(公告)号：US5422503A

公开(公告)日：1995-06-06

申请号：US170763

申请日：1993-12-21

Applicant: Yvon Cazaux ,  Jean-Alain Cortiula ,  Jean Marine

Inventor： Yvon Cazaux ,  Jean-Alain Cortiula ,  Jean Marine

IPC: G11C19/28 ,  H01L29/768 ,  H01L29/78

CPC classification number: H01L29/76816 ,  G11C19/285

Abstract: A CCD shift register having a reading device, or charge/voltage conversion device, at one end. This reading device or charge/voltage conversion device includes a diode, a precharging transistor, and an amplifier with high input impedance. To improve the efficiency of the charge transfer and, more generally, the behavior of the register, especially at high frequencies, it is proposed to shape the final gate of the register, and the diode, in such a way that the width along which the gate is adjacent to the diode (i.e. the width along which the end of the channel is adjacent to the diode) is great while, at the same time, the diode surface area is kept small.

Abstract translation: 一个具有读取装置或充电/电压转换装置的CCD移位寄存器。 该读取装置或充电/电压转换装置包括二极管，预充电晶体管和具有高输入阻抗的放大器。 为了提高电荷转移的效率，并且更一般地，提高寄存器的行为，特别是在高频下，建议对寄存器的最终栅极和二极管进行整形，使得其中的宽度 栅极与二极管相邻（即，沟道的端部与二极管相邻的宽度）很大，同时二极管表面积保持较小。

公开(公告)号：US5283451A

公开(公告)日：1994-02-01

申请号：US856706

申请日：1992-03-24

Applicant: Yvon Cazaux

Inventor： Yvon Cazaux

IPC: H01L27/148 ,  H01L31/0216 ,  H01L29/796

CPC classification number: H01L31/02164 ,  H01L27/14831

Abstract: The invention relates to photosensitive semiconductor devices and, more particularly, to linear arrays having several parallel rows of photoconductive points and operating in the integration and charge carry mode. In particular, the object of the invention is to reduce a smearing effect.The device of the invention comprises a photosensitive surface (SP) divided into photosensitive surface elements (SI1 to SMn) placed in rows (L1 to Ln) and in columns (C1 to CM). Each column forms a shift register that ends in a storage space (CS1 to CSM) of a readout register (RL) formed by a shift register of the charge transfer type: readout register (RL) being on same semiconductor substrate (10) as photosensitive surface (SP) the device includes.According to a feature of the invention, the device an intermediate zone (ZI) protected from light used to make a separation distance (DS) between photosensitive surface (SP) and readout register (RL).

Abstract translation: 本发明涉及光敏半导体器件，更具体地说，涉及具有多个平行的光电导点行并在积分和电荷进位模式下工作的线性阵列。 特别地，本发明的目的是减少拖尾效应。 本发明的器件包括被分成以行（L1至Ln）和列（C1至CM）放置的感光表面元件（SI1至SMn）的光敏表面（SP）。 每列形成移位寄存器，该移位寄存器结束于由电荷转移类型的移位寄存器形成的读出寄存器（RL）的存储空间（CS1至CSM）：读出寄存器（RL）位于与光敏器件相同的半导体衬底（10）上 表面（SP）的设备包括。 根据本发明的一个特征，该装置具有防止在光敏表面（SP）和读出寄存器（RL）之间形成间隔距离（DS）的光的中间区域（ZI）。

公开(公告)号：US4878103A

公开(公告)日：1989-10-31

申请号：US297651

申请日：1989-01-17

Applicant: Yvon Cazaux ,  Didier Herault ,  Yves Thenoz ,  Pierre Blanchard

Inventor： Yvon Cazaux ,  Didier Herault ,  Yves Thenoz ,  Pierre Blanchard

IPC: G11C19/28 ,  G11C27/04 ,  H01L21/339 ,  H01L29/762

CPC classification number: G11C27/04 ,  G11C19/287

Abstract: A charge transfer memory and its fabrication method are disclosed. The memory has charge transfer shift registers, with four phases and two level of electrodes, and a reading register with two phases and three levels of electrodes. At one end of each shift register, there is a final electrode contiguous with a reading storage electrode of the reading register, which is itself contiguous to a reading transfer electrode. These electrodes are made in a layer, with a second type of doping, of a semiconductor substrate with a first type of doping. Zones with a third type of doping are made facing the transfer electrodes of the reading register. According to the invention, facing the final electrode of each shift register, a zone with a fourth type of doping is made. This zone with a fourth type of doping prevents charges flowing in the reading register from returning to a shift register.

Abstract translation: 公开了电荷转移存储器及其制造方法。 存储器具有电荷转移移位寄存器，具有四相和两电平电极，以及具有两相和三电平电平的读取寄存器。 在每个移位寄存器的一端，存在与读取寄存器的读取存储电极相邻的最终电极，其本身与读取转移电极相邻。 这些电极制成具有第一类掺杂的半导体衬底的具有第二类掺杂的层。 具有第三类掺杂的区域面向读取寄存器的转移电极。 根据本发明，面对每个移位寄存器的最终电极，制成具有第四类掺杂的区域。 具有第四类掺杂的区域防止在读取寄存器中流动的电荷返回到移位寄存器。