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    SOL-GEL BASED ANTIREFLECTIVE COATINGS USING ALKYLTRIALKOXYSILANE BINDERS HAVING LOW REFRACTIVE INDEX AND HIGH DURABILITY
    11.
    发明申请
    SOL-GEL BASED ANTIREFLECTIVE COATINGS USING ALKYLTRIALKOXYSILANE BINDERS HAVING LOW REFRACTIVE INDEX AND HIGH DURABILITY 有权
    使用具有低折射率和高耐久性的烷基酮树脂粘合剂的基于溶胶凝胶的抗反射涂层

    公开(公告)号：US20130095237A1

    公开(公告)日：2013-04-18

    申请号：US13273007

    申请日：2011-10-13

    申请人： Nikhil D. Kalyankar ,  Zhi-Wen Sun ,  Jeroen Van Duren ,  Mark Lewis ,  Liang Liang

    发明人： Nikhil D. Kalyankar ,  Zhi-Wen Sun ,  Jeroen Van Duren ,  Mark Lewis ,  Liang Liang

    IPC分类号： B05D5/06 ,  C09D7/12 ,  B82Y30/00

    CPC分类号： C09D1/00 ,  C03C17/008 ,  C03C17/22 ,  C03C17/30 ,  C08K3/36 ,  C09D5/006 ,  C09D7/61 ,  C09D7/67 ,  G02B1/115

    摘要： Methods and compositions for forming porous low refractive index coatings on substrates are provided. The method comprises coating a substrate with a sol-formulation comprising silica based nanoparticles and an alkyltrialkoxysilane based binder. Use of the alkyltrialkoxysilane based binder results in a porous low refractive index coating having bimodal pore distribution including mesopores formed from particle packing and micropores formed from the burning off of organics including the alkyl chain covalently bonded to the silicon. The mass ratio of binder to particles may vary from 0.1 to 20. Porous coatings formed according to the embodiments described herein demonstrate good optical properties (e.g. a low refractive index) while maintaining good mechanical durability due to the presence of a high amount of binder and a close pore structure.

    摘要翻译： 提供了在基底上形成多孔低折射率涂层的方法和组合物。 该方法包括用包含二氧化硅基纳米颗粒和烷基三烷氧基硅烷基粘合剂的溶胶制剂涂覆基材。 使用烷基三烷氧基硅烷基粘合剂导致具有双峰孔分布的多孔低折射率涂层，包括由颗粒填充形成的介孔和由共价键合到硅上的烷基链的有机物燃烧形成的微孔。 粘合剂与颗粒的质量比可以在0.1至20之间变化。根据本文所述实施方案形成的多孔涂层表现出良好的光学性能（例如低折射率），同时由于存在大量粘合剂而保持良好的机械耐久性， 密闭孔结构。

    Silicon Texturing Formulations for Solar Applications
    14.
    发明申请
    Silicon Texturing Formulations for Solar Applications 审中-公开
    太阳能应用的硅纹理配方

    公开(公告)号：US20110070744A1

    公开(公告)日：2011-03-24

    申请号：US12885360

    申请日：2010-09-17

    申请人： Zhi-Wen Sun ,  Minh Anh Nguyen

    发明人： Zhi-Wen Sun ,  Minh Anh Nguyen

    IPC分类号： H01L21/306 ,  C09K13/02

    CPC分类号： H01L31/02363 ,  Y02E10/50

    摘要： The current invention describes a process and texturing solution for texturing a crystalline silicon substrate to provide a light trapping surface within a crystalline silicon based solar cell. In an embodiment the texturing process includes a pre-treatment of hydrofluoric acid followed by the application of a texturing solution that includes potassium hydroxide (KOH) and butanol. The application of the texturing solution may be followed by a hydrofluoric acid post-treatment. A combinatorial method of optimizing the textured surface of a crystalline silicon substrate is also described.

    摘要翻译： 本发明描述了一种用于纹理化晶体硅衬底以在晶体硅基太阳能电池内提供光捕获表面的工艺和纹理解决方案。 在一个实施方案中，变形过程包括氢氟酸的预处理，然后施加包括氢氧化钾（KOH）和丁醇的变形溶液。 变形溶液的应用之后可以是氢氟酸后处理。 还描述了优化结晶硅衬底的纹理表面的组合方法。

    Methods For Improving Selectivity of Electroless Deposition Processes
    15.
    发明申请
    Methods For Improving Selectivity of Electroless Deposition Processes 有权
    提高无电沉积工艺选择性的方法

    公开(公告)号：US20090291275A1

    公开(公告)日：2009-11-26

    申请号：US12471310

    申请日：2009-05-22

    申请人： Jinhong Tong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Nitin Kumar ,  Bob Kong ,  Zachary Fresco

    发明人： Jinhong Tong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Nitin Kumar ,  Bob Kong ,  Zachary Fresco

    IPC分类号： B32B3/00 ,  B05D5/12 ,  B05D3/04

    CPC分类号： H01L21/288 ,  C23C18/1605 ,  C23C18/168 ,  C23C18/50 ,  H01L21/0332 ,  H01L21/3105 ,  H01L21/76829 ,  H01L21/76849

    摘要： Methods for improving selective deposition of a capping layer on a patterned substrate are presented, the method including: receiving the patterned substrate, the patterned substrate including a conductive region and a dielectric region; forming a molecular masking layer (MML) on the dielectric region; preparing an electroless (ELESS) plating bath, where the ELESS plating bath includes: a cobalt (Co) ion source: a complexing agent: a buffer: a tungsten (W) ion source: and a reducing agent; and reacting the patterned substrate with the ELESS plating bath for an ELESS period at an ELESS temperature and an ELESS pH so that the capping layer is selectively formed on the conductive region. In some embodiments, methods further include a pH adjuster for adjusting the ELESS pH to a range of approximately 9.0 pH to 9.2 pH. In some embodiments, the pH adjuster is tetramethylammonium hydroxide (TMAH). In some embodiments, the MML is hydrophilic.

    摘要翻译： 提出了用于改善在图案化衬底上的覆盖层的选择性沉积的方法，所述方法包括：接收图案化衬底，所述图案化衬底包括导电区域和电介质区域; 在介电区上形成分子屏蔽层（MML）; 制备无电镀（ELESS）电镀浴，其中ELESS电镀浴包括：钴（Co）离子源：络合剂：缓冲剂：钨（W）离子源和还原剂; 并在ELESS温度和ELESS pH下使图案化衬底与ELESS电镀浴反应ELESS周期，从而在导电区域上选择性地形成覆盖层。 在一些实施方案中，方法还包括用于将ELESS pH调节至约9.0 pH至9.2 pH范围的pH调节剂。 在一些实施方案中，pH调节剂是氢氧化四甲基铵（TMAH）。 在一些实施方案中，MML是亲水的。

    TCO materials for solar applications
    17.
    发明授权
    TCO materials for solar applications 失效
    TCO材料用于太阳能应用

    公开(公告)号：US08557615B2

    公开(公告)日：2013-10-15

    申请号：US13310724

    申请日：2011-12-03

    申请人： Guowen Ding ,  Mohd Fadzli Anwar Hassan ,  Hien Minh Huu Le ,  Zhi-Wen Sun

    发明人： Guowen Ding ,  Mohd Fadzli Anwar Hassan ,  Hien Minh Huu Le ,  Zhi-Wen Sun

    IPC分类号： H01L21/00

    CPC分类号： H01B1/08 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541

    摘要： A method for forming a transparent conductive oxide (TCO) film for use in a TFPV solar device comprises the formation of a tin oxide film doped with between about 5 volume % and about 40 volume % antimony (ATO). Advantageously, the Sb concentration generally ranges from about 15 volume % to about 20 volume % and more advantageously, the Sb concentration is about 19 volume %. The ATO films exhibited almost no change in transmission characteristics between about 300 nm and about 1100 nm or resistivity after either a 15 hour exposure to water or an anneal in air for 8 minutes at 650 C, which indicated the excellent durability. Control sample of Al doped zinc oxide (AZO) exhibited degradation of resistivity for both a 15 hour exposure to water and an anneal in air for 8 minutes at 650 C.

    摘要翻译： 用于形成用于TFPV太阳能装置的透明导电氧化物（TCO）膜的方法包括形成掺杂有约5体积％至约40体积％的锑（ATO）的氧化锡膜。 有利地，Sb浓度通常在约15体积％至约20体积％的范围内，更有利地，Sb浓度为约19体积％。 ATO膜在暴露于水中15小时或在空气中在650℃下退火8分钟后，在约300nm至约1100nm之间的透射特性几乎没有显示出变化或电阻率，这表明耐久性优异。 Al掺杂的氧化锌（AZO）的对照样品在暴露于水的15小时和在空气中在650℃下退火8分钟都表现出电阻率的降低。

    TCO MATERIALS FOR SOLAR APPLICATIONS
    18.
    发明申请
    TCO MATERIALS FOR SOLAR APPLICATIONS 失效
    TCO材料用于太阳能应用

    公开(公告)号：US20130143354A1

    公开(公告)日：2013-06-06

    申请号：US13310724

    申请日：2011-12-03

    申请人： Guowen Ding ,  Mohd Fadzli Anwar Hassan ,  Hien Minh Huu Le ,  Zhi-Wen Sun

    发明人： Guowen Ding ,  Mohd Fadzli Anwar Hassan ,  Hien Minh Huu Le ,  Zhi-Wen Sun

    IPC分类号： H01L31/18 ,  H01B1/08

    CPC分类号： H01B1/08 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541

    摘要： A method for forming a transparent conductive oxide (TCO) film for use in a TFPV solar device comprises the formation of a tin oxide film doped with between about 5 volume % and about 40 volume % antimony (ATO). Advantageously, the Sb concentration generally ranges from about 15 volume % to about 20 volume % and more advantageously, the Sb concentration is about 19 volume %. The ATO films exhibited almost no change in transmission characteristics between about 300 nm and about 1100 nm or resistivity after either a 15 hour exposure to water or an anneal in air for 8 minutes at 650 C, which indicated the excellent duarability. Control sample of Al doped zinc oxide (AZO) exhibited degradation of resistivity for both a 15 hour exposure to water and an anneal in air for 8 minutes at 650 C.

    摘要翻译： 用于形成用于TFPV太阳能装置的透明导电氧化物（TCO）膜的方法包括形成掺杂有约5体积％至约40体积％的锑（ATO）的氧化锡膜。 有利地，Sb浓度通常在约15体积％至约20体积％的范围内，更有利地，Sb浓度为约19体积％。 ATO膜在暴露于水中15小时或在空气中在650℃退火8分钟后，在约300nm至约1100nm之间的透射特性或电阻率几乎没有显示出变化，这表明极好的二次性。 Al掺杂的氧化锌（AZO）的对照样品在暴露于水的15小时和在空气中在650℃下退火8分钟都表现出电阻率的降低。