公开(公告)号：US20060201425A1

公开(公告)日：2006-09-14

申请号：US11076390

申请日：2005-03-08

Applicant: Boris Kobrin ,  Romuald Nowak ,  Jeffrey Chinn ,  Richard Yi

Inventor： Boris Kobrin ,  Romuald Nowak ,  Jeffrey Chinn ,  Richard Yi

IPC: C23C16/00

CPC classification number: C23C16/4402

Abstract: We have devised an apparatus useful for and a method of removing impurities from vaporous precursor compositions used to generate reactive precursor vapors from which thin films/layers are formed under sub-atmospheric conditions. The method is particularly useful when the layer deposition apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the layer formation process, where the presence of impurities has a significant affect on both the quantity of reactants being charged and the overall composition of the reactant mixture from which the layer is deposited. The method is particularly useful when the vapor pressure of a liquid reactive precursor is less than about 250 Torr at atmospheric pressure.

Abstract translation: 我们已经设计了一种可用于从用于产生反应性前体蒸气的气态前体组合物中除去杂质的装置，其中在大气下条件下形成薄膜/层。 当层沉积设备在单一步骤期间提供量的不同组合的反应物的精确添加时或当层形成过程中存在多个不同的单独步骤时，该方法是特别有用的，其中杂质的存在具有显着的影响 在被充电的反应物的量和沉积层的反应物混合物的总体组成。 当液体反应性前体的蒸气压在大气压下小于约250乇时，该方法特别有用。

公开(公告)号：US20130320510A1

公开(公告)日：2013-12-05

申请号：US13959601

申请日：2013-08-05

Applicant: Applied Microstructures, Inc.

Inventor： Boris Kobrin ,  Nikunj Dangaria ,  Romuald Nowak ,  Michael T. Grimes

IPC: H01L23/00 ,  H01L21/02

CPC classification number: H01L23/564 ,  B81B3/0075 ,  B81B2207/115 ,  B81C1/00206 ,  B81C1/0038 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/3127 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/3162 ,  H01L23/29 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: An article having a surface treated to provide a protective coating structure in accordance with the following method: vapor depositing a first layer on a substrate, wherein said first layer is a metal oxide adhesion layer selected from the group consisting of an oxide of a Group IIIA metal element, a Group IVB metal element, a Group VB metal element, and combinations thereof; vapor depositing a second layer upon said first layer, wherein said second layer includes a silicon-containing layer selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; and vapor depositing a third layer upon said second layer, wherein said third layer is a functional organic-comprising layer, wherein said functional organic-comprising layer is a SAM.

Abstract translation: 具有被处理以提供根据以下方法的保护涂层结构的表面的制品：在基底上气相沉积第一层，其中所述第一层是选自IIIA族的氧化物的金属氧化物粘附层 金属元素，IVB族金属元素，VB族金属元素及其组合; 在所述第一层上气相沉积第二层，其中所述第二层包括选自氧化硅，氮化硅和氮氧化硅的含硅层; 并且在所述第二层上气相沉积第三层，其中所述第三层是包含功能的有机物的层，其中所述含有功能的有机物层是SAM。

公开(公告)号：US20100304132A1

公开(公告)日：2010-12-02

申请号：US12804866

申请日：2010-07-29

Applicant: Boris Kobrin ,  Jeffrey D. Chinn ,  Romuald Nowak ,  Richard C. Yi

Inventor： Boris Kobrin ,  Jeffrey D. Chinn ,  Romuald Nowak ,  Richard C. Yi

IPC: C23C16/40

CPC classification number: C23C16/0227 ,  B05D1/185 ,  B05D1/60 ,  B05D3/142 ,  B05D3/145 ,  B05D7/52 ,  B05D7/56 ,  B82Y30/00 ,  B82Y40/00 ,  C03C17/42 ,  C03C23/006 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/401 ,  C23C16/402 ,  C23C16/448 ,  C23C16/4485 ,  C23C16/455 ,  C23C16/45557 ,  C23C16/56 ,  Y10T428/12618 ,  Y10T428/12632 ,  Y10T428/24 ,  Y10T428/24355 ,  Y10T428/24967 ,  Y10T428/24975 ,  Y10T428/261 ,  Y10T428/265 ,  Y10T428/31663 ,  Y10T428/31667

Abstract: An improved vapor-phase deposition method and apparatus for the application of multilayered films/coatings on substrates is described. The method is used to deposit multilayered coatings where the thickness of an oxide-based layer in direct contact with a substrate is controlled as a function of the chemical composition of the substrate, whereby a subsequently deposited layer bonds better to the oxide-based layer. The improved method is used to deposit multilayered coatings where an oxide-based layer is deposited directly over a substrate and an organic-based layer is directly deposited over the oxide-based layer. Typically, a series of alternating layers of oxide-based layer and organic-based layer are applied.

Abstract translation: 描述了一种用于在基底上施加多层膜/涂层的改进的气相沉积方法和装置。 该方法用于沉积与衬底直接接触的氧化物基层的厚度作为衬底的化学组成的函数来控制多层涂层，由此随后沉积的层更好地结合到氧化物基层。 改进的方法用于沉积多层涂层，其中氧化物基层直接沉积在衬底上，并且基于有机的层直接沉积在氧化物基层上。 通常，施加一系列交替层的氧化物基层和基于有机层。

公开(公告)号：US20080299288A1

公开(公告)日：2008-12-04

申请号：US12151323

申请日：2008-05-05

Applicant: Boris Kobrin ,  Dangaria Nikunji Hirji ,  Romuald Nowak ,  Michael T. Grimes

Inventor： Boris Kobrin ,  Dangaria Nikunji Hirji ,  Romuald Nowak ,  Michael T. Grimes

IPC: C23C16/00 ,  C23C16/50 ,  B28B7/36 ,  C23C16/40 ,  C23C16/30 ,  C23C16/06 ,  H01L23/28

CPC classification number: H01L23/564 ,  B81B3/0075 ,  B81B2207/115 ,  B81C1/00206 ,  B81C1/0038 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/3127 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/3162 ,  H01L23/29 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: A method of providing a durable protective coating structure which comprises at least three layers, and which is stable at temperatures in excess of 400° C., where the method includes vapor depositing a first layer deposited on a substrate, wherein the first layer is a metal oxide adhesion layer selected from the group consisting of an oxide of a Group IIIA metal element, a Group IVB metal element, a Group VB metal element, and combinations thereof; vapor depositing a second layer upon said first layer, wherein said second layer includes a silicon-containing layer selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; and vapor depositing a third layer upon said second layer, wherein said third layer is a functional organic-comprising layer. Numerous articles useful in electronics, MEMS, nanoimprinting lithography, and biotechnology applications can be fabricated using the method.

Abstract translation: 一种提供耐久保护涂层结构的方法，其包括至少三层，并且在超过400℃的温度下是稳定的，其中所述方法包括气相沉积沉积在基底上的第一层，其中所述第一层为 金属氧化物粘附层，其选自由IIIA族金属元素的氧化物，IVB族金属元素，VB族金属元素及其组合组成的组中; 在所述第一层上气相沉积第二层，其中所述第二层包括选自氧化硅，氮化硅和氮氧化硅的含硅层; 并在所述第二层上气相沉积第三层，其中所述第三层是含功能的有机物层。 可以使用该方法制造在电子，MEMS，纳米压印光刻和生物技术应用中有用的许多制品。

公开(公告)号：US20080241512A1

公开(公告)日：2008-10-02

申请号：US11904522

申请日：2007-09-26

Applicant: Kobrin Boris ,  Jeffrey D. Chin ,  Benigno A. Janeiro ,  Romuald Nowak

Inventor： Kobrin Boris ,  Jeffrey D. Chin ,  Benigno A. Janeiro ,  Romuald Nowak

IPC: B32B5/16 ,  B05D1/12 ,  C23F1/00 ,  B05D1/36 ,  B32B9/04

CPC classification number: B05D5/083 ,  B05D1/34 ,  B05D1/60 ,  B05D5/08 ,  C23C16/401 ,  C23C16/403 ,  Y10T428/256

Abstract: The present invention is related to a chemical vapor deposition method of depositing layers of materials to provide super-hydrophilic surface properties, or super-hydrophobic surface properties, or combinations of such properties at various locations on a given surface. The invention also relates to electronic applications which make use of super-hydrophobic surface properties, and to biological applications which make use of super-hydrophilic surface properties.

Abstract translation: 本发明涉及沉积材料层以提供超亲水表面性质或超疏水性表面性质的化学气相沉积方法，或者给定表面上各种位置处的这些性质的组合。 本发明还涉及利用超疏水表面性质的电子应用以及利用超亲水表面性质的生物应用。

公开(公告)号：US20080206539A1

公开(公告)日：2008-08-28

申请号：US12072086

申请日：2008-02-22

Applicant: Boris Kobrin ,  Romuald Nowak ,  Jeffrey D. Chinn

Inventor： Boris Kobrin ,  Romuald Nowak ,  Jeffrey D. Chinn

IPC: H01L21/316 ,  C23C16/40

CPC classification number: C09D1/00 ,  B81B3/0075 ,  C08K3/04 ,  C08K3/22 ,  C08K2003/2227 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45525

Abstract: The present invention is related to carbon-doped metal oxide films. The carbon-doped metal oxide films provide a low coefficient of friction, for example ranging from about 0.05 to about 0.4. In addition, the carbon-doped metal oxide films applied over a silicon substrate, for example, provide anti-stiction properties, where the measured work of adhesion for a MEMS device cantilever beam coated with the carbon-doped metal oxide film is less than 10 μJ/m2. In addition, the carbon-doped metal oxide films provide unexpectedly good water vapor transmission properties. The carbon content in the carbon-doped metal oxide films ranges from about 5 atomic % to about 20 atomic %.

Abstract translation: 本发明涉及碳掺杂金属氧化物膜。 碳掺杂的金属氧化物膜提供低摩擦系数，例如约0.05至约0.4。 此外，施加在硅衬底上的掺碳金属氧化物膜例如提供抗静电性质，其中测量的涂覆有碳掺杂金属氧化物膜的MEMS器件悬臂梁的粘附力小于10 muJ / m 2。 此外，掺杂碳的金属氧化物膜提供出乎意料的良好的水蒸汽透过性能。 碳掺杂的金属氧化物膜中的碳含量为约5原子％至约20原子％。

公开(公告)号：US20080083329A1

公开(公告)日：2008-04-10

申请号：US11903397

申请日：2007-09-20

Applicant: Boris Kobrin ,  Romuald Nowak ,  Jeffrey Chinn ,  Richard Yi

Inventor： Boris Kobrin ,  Romuald Nowak ,  Jeffrey Chinn ,  Richard Yi

IPC: B01D46/46

CPC classification number: C23C16/4402

Abstract: We have devised an apparatus useful for and a method of removing impurities from vaporous precursor compositions used to generate reactive precursor vapors from which thin films/layers are formed under sub-atmospheric conditions. The method is particularly useful when the layer deposition apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the layer formation process, where the presence of impurities has a significant affect on both the quantity of reactants being charged and the overall composition of the reactant mixture from which the layer is deposited. The method is particularly useful when the vapor pressure of a liquid reactive precursor is less than about 250 Torr at atmospheric pressure.

Abstract translation: 我们已经设计了一种可用于从用于产生反应性前体蒸气的气态前体组合物中除去杂质的装置，其中在大气下条件下形成薄膜/层。 当层沉积设备在单一步骤期间提供量的不同组合的反应物的精确添加时或当层形成过程中存在多个不同的单独步骤时，该方法是特别有用的，其中杂质的存在具有显着的影响 在被充电的反应物的量和沉积层的反应物混合物的总体组成。 当液体反应性前体的蒸气压在大气压下小于约250乇时，该方法特别有用。

公开(公告)号：US20080081151A1

公开(公告)日：2008-04-03

申请号：US11978123

申请日：2007-10-26

Applicant: Boris Kobrin ,  Jeffrey Chinn ,  Romuald Nowak ,  Richard Yi

Inventor： Boris Kobrin ,  Jeffrey Chinn ,  Romuald Nowak ,  Richard Yi

IPC: B32B5/00 ,  B05D1/36 ,  B32B7/00 ,  C23C16/44 ,  C23C16/00 ,  B05D3/04

CPC classification number: C23C16/0227 ,  B05D1/185 ,  B05D1/60 ,  B05D3/142 ,  B05D3/145 ,  B05D7/52 ,  B05D7/56 ,  B82Y30/00 ,  B82Y40/00 ,  C03C17/42 ,  C03C23/006 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/401 ,  C23C16/402 ,  C23C16/448 ,  C23C16/4485 ,  C23C16/455 ,  C23C16/45557 ,  C23C16/56 ,  Y10T428/12618 ,  Y10T428/12632 ,  Y10T428/24 ,  Y10T428/24355 ,  Y10T428/24967 ,  Y10T428/24975 ,  Y10T428/261 ,  Y10T428/265 ,  Y10T428/31663 ,  Y10T428/31667

Abstract: An improved vapor-phase deposition method and apparatus for the application of multilayered films/coatings on substrates is described. The method is used to deposit multilayered coatings where the thickness of an oxide-based layer in direct contact with a substrate is controlled as a function of the chemical composition of the substrate, whereby a subsequently deposited layer bonds better to the oxide-based layer. The improved method is used to deposit multilayered coatings where an oxide-based layer is deposited directly over a substrate and a SAM organic-based layer is directly deposited over the oxide-based layer. Typically a series of alternating layers of oxide-based layer and organic-based layer are applied.

Abstract translation: 描述了一种用于在基底上施加多层膜/涂层的改进的气相沉积方法和装置。 该方法用于沉积与衬底直接接触的氧化物基层的厚度作为衬底的化学组成的函数来控制多层涂层，由此随后沉积的层更好地结合到氧化物基层。 改进的方法用于沉积多层涂层，其中氧化物基层直接沉积在衬底上，并且基于氧化物的层直接沉积SAM有机基层。 通常，应用一系列交替层的氧化物基层和基于有机的层。

公开(公告)号：US07776396B2

公开(公告)日：2010-08-17

申请号：US11112664

申请日：2005-04-21

Applicant: Boris Kobrin ,  Jeffrey D. Chinn ,  Romuald Nowak ,  Richard C. Yi

Inventor： Boris Kobrin ,  Jeffrey D. Chinn ,  Romuald Nowak ,  Richard C. Yi

IPC: C23C16/40

CPC classification number: C23C16/0227 ,  B05D1/185 ,  B05D1/60 ,  B05D3/142 ,  B05D3/145 ,  B05D7/52 ,  B05D7/56 ,  B82Y30/00 ,  B82Y40/00 ,  C03C17/42 ,  C03C23/006 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/401 ,  C23C16/402 ,  C23C16/448 ,  C23C16/4485 ,  C23C16/455 ,  C23C16/45557 ,  C23C16/56 ,  Y10T428/12618 ,  Y10T428/12632 ,  Y10T428/24 ,  Y10T428/24355 ,  Y10T428/24967 ,  Y10T428/24975 ,  Y10T428/261 ,  Y10T428/265 ,  Y10T428/31663 ,  Y10T428/31667

Abstract: An improved vapor-phase deposition method and apparatus for the application of multilayered films/coatings on substrates is described. The method is used to deposit multilayered coatings where the thickness of an oxide-based layer in direct contact with a substrate is controlled as a function of the chemical composition of the substrate, whereby a subsequently deposited layer bonds better to the oxide-based layer. The improved method is used to deposit multilayered coatings where an oxide-based layer is deposited directly over a substrate and an organic-based layer is directly deposited over the oxide-based layer. Typically, a series of alternating layers of oxide-based layer and organic-based layer are applied.

公开(公告)号：US07413774B2

公开(公告)日：2008-08-19

申请号：US11018173

申请日：2004-12-21

Applicant: Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

Inventor： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

IPC: C23C16/00

CPC classification number: B82Y30/00 ,  B05D1/185 ,  B05D1/60 ,  B05D3/142 ,  B82Y40/00 ,  C09D4/00 ,  C23C16/4485 ,  C08G77/04

Abstract: A vapor phase deposition method and apparatus for the application of thin layers and coatings on substrates. The method and apparatus are useful in the fabrication of electronic devices, micro-electromechanical systems (MEMS), Bio-MEMS devices, micro and nano imprinting lithography, and microfluidic devices. The apparatus used to carry out the method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. The apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the coating formation process. The precise addition of each of the reactants in vapor form is metered into a predetermined set volume at a specified temperature to a specified pressure, to provide a highly accurate amount of reactant.

Abstract translation: 一种用于在基底上施加薄层和涂层的气相沉积方法和装置。 该方法和装置可用于制造电子设备，微机电系统（MEMS），生物MEMS装置，微型和纳米压印光刻以及微流体装置。 用于实施该方法的装置提供了在涂层形成过程的单个反应步骤中添加精确量的每种待消耗的反应物。 该装置提供在单一步骤期间或当涂层形成过程中存在许多不同的单独步骤时精确添加量的不同组合的反应物。 将蒸气形式的每种反应物的精确加入在指定温度下计量到预定设定体积至指定压力，以提供高精度的反应物。