公开(公告)号：US06930051B1

公开(公告)日：2005-08-16

申请号：US10165861

申请日：2002-06-06

Applicant: Ronald P. Manginell ,  W. Kent Schubert ,  Randy J. Shul

Inventor： Ronald P. Manginell ,  W. Kent Schubert ,  Randy J. Shul

IPC: B81C1/00 ,  H01L21/302 ,  H01L21/308

CPC classification number: B81C1/00626 ,  B81C2201/0142 ,  H01L21/3083

Abstract: New methods for fabrication of silicon microstructures have been developed. In these methods, an etching delay layer is deposited and patterned so as to provide differential control on the depth of features being etched into a substrate material. Structures having features with different depth can be formed thereby in a single etching step.

Abstract translation: 已经开发了用于制造硅微结构的新方法。 在这些方法中，沉积和图案化蚀刻延迟层，以便对蚀刻到衬底材料中的特征的深度提供差分控制。 可以在单个蚀刻步骤中形成具有不同深度的特征的结构。

公开(公告)号：US20030035192A1

公开(公告)日：2003-02-20

申请号：US09995588

申请日：2001-11-29

Applicant: FUJITSU LIMITED

Inventor： Yoshihiro Mizuno ,  Satoshi Ueda ,  Osamu Tsuboi ,  Ippei Sawaki ,  Hisao Okuda ,  Fumio Yamagishi ,  Norinao Kouma

IPC: G02B026/00

CPC classification number: G02B26/0841 ,  B01D53/885 ,  B01J8/0453 ,  B01J8/0496 ,  B01J2208/00212 ,  B01J2208/00309 ,  B01J2208/025 ,  B81B2201/045 ,  B81B2203/0136 ,  B81C1/00142 ,  B81C1/00626 ,  B81C2201/0142 ,  C01B3/16 ,  C01B2203/0288 ,  C01B2203/045 ,  C01B2203/0485 ,  Y10S359/904

Abstract: A method of making a micromirror unit is provided. In accordance with the method, a micromirror unit is made from a material substrate having a multi-layer structure composed of silicon layers and at least one intermediate layer. The resulting micromirror unit includes a mirror forming base, a frame and a torsion bar. The method includes the following steps. First, a pre-torsion bar is formed by subjecting one of the silicon layers to etching. The obtained pre-torsion bar is rendered smaller in thickness than the mirror forming base and is held in contact with the intermediate layer. Then, the desired torsion bar is obtained by removing the intermediate layer contacting with the pre-torsion bar.

Abstract translation: 提供了制造微镜单元的方法。 根据该方法，微镜单元由具有由硅层和至少一个中间层构成的多层结构的材料基板制成。 所得到的微镜单元包括反射镜形成基座，框架和扭杆。 该方法包括以下步骤。 首先，通过使一个硅层进行蚀刻来形成预扭杆。 所获得的预扭杆的厚度比反射镜形成基座的厚度小，并与中间层保持接触。 然后，通过去除与预扭杆接触的中间层来获得所需的扭力杆。

公开(公告)号：US20020192852A1

公开(公告)日：2002-12-19

申请号：US10192087

申请日：2002-07-09

Inventor： Bruce R. Scharf ,  Andrew J. Zosel ,  Joel A. Kubby ,  Peter M. Gulvin ,  Chuang-Chia Lin ,  Jingkuang Chen ,  Alex T. Tran

IPC: H01L021/00

CPC classification number: B81C1/00484 ,  B81B2201/042 ,  B81B2203/0118 ,  B81C1/00666 ,  B81C2201/0142

Abstract: The present invention provides a micromechanical or microoptomechanical structure produced by a process comprising defining the structure in a single-crystal silicon layer separated by an insulator layer from a substrate layer; selectively etching the single crystal silicon layer; depositing and etching a polysilicon layer on the insulator layer, with remaining polysilicon forming mechanical elements of the structure; metalizing a backside of the structure; and releasing the formed structure.

Abstract translation: 本发明提供了一种微机械或微机电结构，其通过包括限定由绝缘体层与衬底层分隔的单晶硅层中的结构的方法而产生; 选择性地蚀刻单晶硅层; 沉积和蚀刻绝缘体层上的多晶硅层，剩余的多晶硅形成结构的机械元件; 金属化结构的背面; 并释放形成的结构。

公开(公告)号：US11679976B2

公开(公告)日：2023-06-20

申请号：US16776098

申请日：2020-01-29

Applicant: SEIKO EPSON CORPORATION

Inventor： Shogo Inaba

IPC: G01P15/125 ,  B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00515 ,  G01P15/125 ,  B81B3/0021 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81B2203/0353 ,  B81B2203/04 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0142

Abstract: A structure forming method according to an aspect is a structure forming method for forming a first hole and a second hole having width smaller than width of the first hole in a substrate with dry etching and forming a structure. The structure forming method includes forming an etching mask on the substrate, etching a portion of the etching mask overlapping a first hole forming region where the first hole is formed, etching a portion of the etching mask overlapping a second hole forming region where the second hole is formed, and performing the dry etching of the substrate using the etching mask as a mask.

公开(公告)号：US09404913B2

公开(公告)日：2016-08-02

申请号：US14057170

申请日：2013-10-18

Applicant: Sandia Corporation

Inventor： Thomas D. Perroud ,  Kamlesh D. Patel ,  Robert J. Meagher

IPC: B01L3/00 ,  B81B1/00 ,  C23F1/02 ,  G01N33/50 ,  B01F3/08 ,  B01F5/04 ,  B01F13/00 ,  F15D1/00 ,  B81B7/00 ,  B81C1/00

CPC classification number: G01N33/5005 ,  B01F3/0807 ,  B01F5/0471 ,  B01F13/0059 ,  B01L3/502707 ,  B01L3/502753 ,  B01L3/502761 ,  B01L3/502776 ,  B01L3/502784 ,  B01L2200/0668 ,  B01L2300/0816 ,  B01L2300/0864 ,  B01L2400/0688 ,  B81B2201/058 ,  B81C1/00047 ,  B81C1/00087 ,  B81C1/00119 ,  B81C1/00404 ,  B81C2201/0133 ,  B81C2201/0142 ,  Y10T137/9464 ,  Y10T428/24479

Abstract: Disclosed herein are methods of making micropores of a desired height and/or width between two isotropic wet etched features in a substrate which comprises single-level isotropic wet etching the two features using an etchant and a mask distance that is less than 2× a set etch depth. Also disclosed herein are methods using the micropores and microfluidic devices comprising the micropores.

公开(公告)号：US20140329722A1

公开(公告)日：2014-11-06

申请号：US14331651

申请日：2014-07-15

Applicant: Sandia Corporation

Inventor： Thomas D. Perroud ,  Kamlesh D. Patel

IPC: G01N33/50

CPC classification number: G01N33/5005 ,  B01F3/0807 ,  B01F5/0471 ,  B01F13/0059 ,  B01L3/502707 ,  B01L3/502753 ,  B01L3/502761 ,  B01L3/502776 ,  B01L3/502784 ,  B01L2200/0668 ,  B01L2300/0816 ,  B01L2300/0864 ,  B01L2400/0688 ,  B81B2201/058 ,  B81C1/00047 ,  B81C1/00087 ,  B81C1/00119 ,  B81C1/00404 ,  B81C2201/0133 ,  B81C2201/0142 ,  Y10T137/9464 ,  Y10T428/24479

Abstract: Disclosed herein are methods of immobilizing a particle which comprise focusing the flow of a sample fluid containing the particle into a virtual channel which flows towards an unoccupied hydrodynamic trap in a microfluidic channel such that the particle flows into the hydrodynamic trap and becomes immobilized therein. Also disclosed are microfluidic devices which comprise at least one microchannel having at least one hydrodynamic trap, at least one focusing fluid inlet, said focusing fluid inlet is upstream of the hydrodynamic trap such that a focusing fluid introduced therein results in a virtual channel of a sample fluid when present which preferentially flows toward the hydrodynamic trap.

Abstract translation: 本文公开了固定颗粒的方法，其包括将含有颗粒的样品流体的流动聚焦到虚拟通道中，该虚拟通道朝向微流体通道中的未占据的流体动力阱捕获，使得颗粒流入流体动力阱并固定在其中。 还公开了微流体装置，其包括具有至少一个流体动力捕集器，至少一个聚焦流体入口的至少一个微通道，所述聚焦流体入口在流体动力捕集器的上游，使得其中引入的聚焦流体导致样品的虚拟通道 存在时优先流向流体动力阱的流体。

公开(公告)号：US08716028B2

公开(公告)日：2014-05-06

申请号：US13731296

申请日：2012-12-31

Applicant: Amy Tseng ,  Brian V. Jenkins ,  Robert M. Mack

Inventor： Amy Tseng ,  Brian V. Jenkins ,  Robert M. Mack

IPC: G01N21/75

CPC classification number: G01N31/221 ,  B81C1/00531 ,  B81C2201/0132 ,  B81C2201/0142 ,  C09K13/00 ,  G01N21/272 ,  G01N21/80 ,  G01N35/085 ,  G01N2021/8411 ,  G01N2021/8557 ,  H01L21/67063 ,  H01L22/12 ,  Y10T436/153333

Abstract: The invention is directed towards methods and compositions for identifying the amount of hydrofluoric acid in a buffered oxide etching composition. In buffered oxide etching compositions it is very difficult to measure the amount of hydrofluoric acid because it has varying equilibriums and it is toxic so it hard to handle and sample. When used to manufacture microchips however, incorrect amounts of hydrofluoric acid will ruin those chips. The invention utilizes a unique method of spectrographically measuring the hydrofluoric acid when in contact with added chromogenic agents to obtain exact measurements that are accurate, immediate, and safe.

Abstract translation: 本发明涉及用于鉴定缓冲氧化物蚀刻组合物中氢氟酸的量的方法和组合物。 在缓冲氧化物蚀刻组合物中，非常难以测量氢氟酸的量，因为其具有不同的平衡，并且它是有毒的，因此难以处理和取样。 然而，当用于制造微芯片时，不正确量的氢氟酸会破坏这些芯片。 当与添加的显色剂接触时，本发明利用光谱测量氢氟酸的独特方法，以获得准确，立即和安全的精确测量。

公开(公告)号：US20140099241A1

公开(公告)日：2014-04-10

申请号：US14057170

申请日：2013-10-18

Applicant: Sandia Corporation

Inventor： Thomas D. Perroud ,  Kamlesh D. Patel ,  Robert J. Meagher

IPC: B01L3/00

CPC classification number: G01N33/5005 ,  B01F3/0807 ,  B01F5/0471 ,  B01F13/0059 ,  B01L3/502707 ,  B01L3/502753 ,  B01L3/502761 ,  B01L3/502776 ,  B01L3/502784 ,  B01L2200/0668 ,  B01L2300/0816 ,  B01L2300/0864 ,  B01L2400/0688 ,  B81B2201/058 ,  B81C1/00047 ,  B81C1/00087 ,  B81C1/00119 ,  B81C1/00404 ,  B81C2201/0133 ,  B81C2201/0142 ,  Y10T137/9464 ,  Y10T428/24479

Abstract: Disclosed herein are methods of making micropores of a desired height and/or width between two isotropic wet etched features in a substrate which comprises single-level isotropic wet etching the two features using an etchant and a mask distance that is less than 2× a set etch depth. Also disclosed herein are methods using the micropores and microfluidic devices comprising the micropores.

Abstract translation: 本文公开的方法是在衬底中的两个各向同性湿蚀刻特征之间制造所需高度和/或宽度的微孔的方法，其包括使用蚀刻剂和小于2×一组的掩模距离的单层各向同性湿蚀刻两个特征 蚀刻深度。 本文还公开了使用包括微孔的微孔和微流体装置的方法。

公开(公告)号：US20140073060A1

公开(公告)日：2014-03-13

申请号：US14082448

申请日：2013-11-18

Applicant: Nalco Company

Inventor： Amy M. Tseng ,  Brian V. Jenkins ,  Robert Mack

IPC: G01N21/80

CPC classification number: G01N31/221 ,  B81C1/00531 ,  B81C2201/0132 ,  B81C2201/0142 ,  C09K13/00 ,  G01N21/272 ,  G01N21/80 ,  G01N35/085 ,  G01N2021/8411 ,  G01N2021/8557 ,  H01L21/67063 ,  H01L22/12 ,  Y10T436/153333

Abstract: The invention is directed towards methods and compositions for identifying the amount of hydrofluoric acid in a buffered oxide etching composition. In buffered oxide etching compositions it is very difficult to measure the amount of hydrofluoric acid because it has varying equilibriums and it is toxic so it hard to handle and sample. When used to manufacture microchips however, incorrect amounts of hydrofluoric acid will ruin those chips. The invention utilizes a unique method of spectrographically measuring the hydrofluoric acid when in contact with added chromogenic agents to obtain exact measurements that are accurate, immediate, and safe.

公开(公告)号：US20130137195A1

公开(公告)日：2013-05-30

申请号：US13674482

申请日：2012-11-12

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Oliver James Ansell

IPC: H01L21/60

CPC classification number: H01J37/32963 ,  B81C99/0065 ,  B81C2201/0135 ,  B81C2201/0142 ,  H01J37/32972 ,  H01L22/26

Abstract: A method of etching the whole width of a substrate to expose buried features is disclosed. The method includes etching a face of a substrate across its width to achieve substantially uniform removal of material; illuminating the etched face during the etch process; applying edge detection techniques to light reflected or scattered from the face to detect the appearances of buried features; and modifying the etch in response to the detection of the buried feature. An etching apparatus for etching substrate across its width to expose buried is also disclosed.

Abstract translation: 公开了一种蚀刻衬底的整个宽度以暴露掩埋特征的方法。 该方法包括在其宽度上蚀刻衬底的表面以实现材料的基本上均匀的去除; 在蚀刻过程中照射蚀刻的面; 将边缘检测技术应用于从脸部反射或散射的光，以检测埋藏特征的外观; 以及响应于所述掩埋特征的检测来修改所述蚀刻。 还公开了一种用于蚀刻衬底跨越其宽度以暴露掩埋的蚀刻装置。