摘要:
Disclosed is a light emitting device. The light emitting device includes a body having a cavity; first and second lead frames spaced apart from each other in the cavity, a gap part between the first and second lead frames, an adhesive material extending from at least one of sidewalls of the cavity to a top surface of at least one of the first and second lead frames, a light emitting chip on at least one of the first and second lead frames, and a molding member adhering to the adhesive material in the cavity.
摘要:
A wafer cassette for consolidation in process of high temperature baking is provided. The wafer cassette includes one front end member, two sidewall plates, one back end member, a plurality of fixture slots, two resilient sheets and two supporting rods. By using this wafer cassette in high temperature baking process, the chance of having the wafer damage is minimized.
摘要:
The present invention relates generally to a system and method for including a thin conductive polymer film, such carbon-filled PEEK, in the molding process for handlers, transporters, carriers, trays and like devices utilized in the semiconductor processing industry. The conductive film of predetermined size and shape is selectively placed along a shaping surface in a mold cavity for alignment with a desired target surface of a moldable material. The molding process causes a surface of the film to bond to a contact surface of the moldable material such that the film is permanently adhered to the moldable material. As a result, a compatible conductive polymer can be selectively bonded only to those target surfaces where ESD is needed.
摘要:
A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer
摘要:
Disclosed is a light emitting device. The light emitting device includes a body having a cavity; first and second lead frames spaced apart from each other in the cavity, a gap part between the first and second lead frames, an adhesive material extending from at least one of sidewalls of the cavity to a top surface of at least one of the first and second lead frames, a light emitting chip on at least one of the first and second lead frames, and a molding member adhering to the adhesive material in the cavity.
摘要:
A container for precision substrate having one or more component formed by molding a thermoplastic resin, characterized in that the component satisfies characteristics [1] and [2] below. [1] When being brought to contact ultra high purity argon gas (impurity concentration: 1 ppb or less) at 25° C. having a flow rate of 1.2 L/min., a water amount in said argon gas after 300 minutes is 30 ppb or less per a surface area 1 cm2 of the component. [2] When being placed in the air at 100° C., an increase amount of organics in the air in 300 minutes is 150 ng or less per weight 1 g of the component. According to the container, demands for low contamination can be satisfied.
摘要:
A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer.
摘要:
A single piece, high purity, full density semiconductor wafer holding fixture for holding a multiplicity of wafers and consisting essentially of chemical vapor deposited silicon carbide (CVD SiC). The wafer carrier is advantageous for the fabrication of electronic integrated circuits where high temperatures and/or corrosive chemicals present, where dimensional stability of the holder is advantageous to the process or where introduction of contaminating elements is deleterious to the process. The method for making such an article comprises shaping a substrate, e.g. graphite, which on one surface has the form of the desired shape, said form comprising raised longitudinal sections to support the silicon wafers at the edges of the wafers, chemically vapor depositing a layer of silicon carbide onto the substrate, removing the substrate intact or by burning, machining, grinding, gritblasting and/or dissolving, and grinding the silicon carbide in any areas where a more precise dimension is required.
摘要:
It is known that it is advantageous in semiconductor wafer production to re-slice a semiconductor wafer having impurity diffusion layers on both sides which are processed or doped in advance of the re-slicing process. In the re-slicing process, a thin slice base is mounted on the periphery of a semiconductor wafer prior to the re-slicing process for protecting the periphery of the wafer from chipping off damage during the re-slicing process by an ID saw or the like. The present invention provides several examples of methods and apparatus for mounting a slice base prepared in advance on the periphery of a semiconductor wafer by utilizing the method and apparatus of the present invention. In addition, another method and apparatus for simultaneously molding and mounting a molded type slice base by using a thermosetting type resin on the periphery of the semiconductor, whereby the re-slicing process of a semiconductor wafer is extremely improved in production and labor cost.
摘要:
A moldable plastic, distortion and warp resistant wafer carrier with forked end wall portions that tie into the sidewalls of the carrier. The forked end wall portions from triangular column like supports between an end wall and sidewalls of the carrier such that the carrier maintains structural integrity even when its temperature fluctuates between ambient and 180.degree. C. temperatures in a relatively short time period. The structural integrity of the carrier is further enhanced by the end wall having an integrally formed bend which is disposed at a right angle relative to the forked end wall portions.