公开(公告)号：US20190164854A1

公开(公告)日：2019-05-30

申请号：US16244484

申请日：2019-01-10

Applicant: InnoLux Corporation

Inventor： Tung-Kai LIU ,  Tsau-Hua HSIEH ,  Wei-Cheng CHU ,  Chun-Hsien LIN ,  Chandra LIUS ,  Ting-Kai HUNG ,  Kuan-Feng LEE ,  Ming-Chang LIN ,  Tzu-Min YAN ,  Hui-Chieh WANG

IPC: H01L21/66 ,  H01L21/67 ,  H01L33/38 ,  B65G43/08 ,  H01L27/12 ,  H01L21/288 ,  H01L25/16 ,  G01R31/26 ,  H01L33/00

Abstract: A display device includes a substrate, a light-emitting element, and a transistor. The substrate has a top surface. The light-emitting element is disposed on the substrate. The transistor is disposed on the substrate, and includes a drain electrode, a gate electrode, and a semiconductor layer. The drain electrode is electrically connected to the light-emitting element. The semiconductor layer includes an overlapping portion overlapped with the gate electrode. The light-emitting element does not overlap with the overlapping portion along a direction perpendicular to the top surface of the substrate.

公开(公告)号：US20190121182A1

公开(公告)日：2019-04-25

申请号：US16218562

申请日：2018-12-13

Applicant: InnoLux Corporation

Inventor： Chandra LIUS ,  Kuan-Feng LEE ,  Nai-Fang HSU

IPC: G02F1/1368 ,  G02F1/1345 ,  H01L27/12 ,  G02F1/1362

Abstract: A display device is disclosed, which includes: a first substrate including a display region and a peripheral region, wherein the peripheral region is adjacent to the display region; a first transistor disposed on the peripheral region, wherein the first transistor includes a first semiconductor layer, and the first semiconductor layer is a silicon semiconductor layer; a second transistor disposed on the display region, wherein the second transistor includes a second semiconductor layer, and the second semiconductor layer is an oxide semiconductor layer; a first insulating layer disposed under the first semiconductor layer, and a buffer layer disposed between the first substrate and the first insulating layer, wherein a thickness of the first insulating layer is greater than a thickness of the buffer layer.

公开(公告)号：US20190080649A1

公开(公告)日：2019-03-14

申请号：US16189458

申请日：2018-11-13

Applicant: Innolux Corporation

Inventor： Kuan-Feng LEE ,  Yu-Hsien WU

IPC: G09G3/3233 ,  H01L27/32 ,  H01L27/12 ,  G09G3/3266 ,  H01L25/075 ,  H01L25/16

CPC classification number: G09G3/3233 ,  G09G3/3266 ,  G09G2300/0452 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/326 ,  H01L27/3262 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/7869

Abstract: A display device includes at least one first emitting diode coupled with an input node; and a pixel driver circuitry including a drive transistor including a first terminal and a control terminal, wherein the first terminal is coupled with the input node; a data input transistor including a second terminal coupled with the control terminal; a reset transistor including a first gate, a second gate, a semiconductor layer and a third terminal coupled with the input node, wherein, in a cross-sectional view of the display device, the first gate and the second gate are disposed on the same side of the semiconductor layer.

公开(公告)号：US20190019853A1

公开(公告)日：2019-01-17

申请号：US16136860

申请日：2018-09-20

Applicant: INNOLUX CORPORATION

Inventor： Chandra LIUS ,  Kuan-Feng LEE ,  Nai-Fang HSU

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/786

Abstract: A display device is disclosed, which includes: a substrate; a light emitting diode disposed above the substrate; a first transistor disposed above the substrate; and a second transistor disposed above the substrate. The first transistor includes: a first semiconductor layer; a first top gate electrode disposed above the first semiconductor layer; a first bottom gate electrode disposed under the first semiconductor layer; a first source electrode electrically connected to the first semiconductor layer; and a first drain electrode electrically connected to the first semiconductor layer, wherein the first drain electrode is electrically connected to the light emitting diode. In addition, the second transistor includes: a second semiconductor layer. Herein, one of the first semiconductor layer and the second semiconductor layer includes a first silicon semiconductor layer, and the other includes a first oxide semiconductor layer.

公开(公告)号：US20180159064A1

公开(公告)日：2018-06-07

申请号：US15814727

申请日：2017-11-16

Applicant: InnoLux Corporation

Inventor： Yu-Hsien WU ,  Yu-Sheng TSAI ,  Kuan-Feng LEE ,  Chandra LIUS

IPC: H01L51/52 ,  G09G3/34 ,  H01L27/32

CPC classification number: H01L51/5203 ,  G09G3/3406 ,  G09G2310/0264 ,  H01L27/3251 ,  H01L27/3276

Abstract: A display device is provided. The display device includes a substrate, a driving transistor, a first insulation layer, a first electrode and a second insulation layer. The driving transistor is disposed on the substrate and includes a gate electrode, and the gate electrode projects a first projection profile on the substrate. The first insulation layer is disposed on the driving transistor. The first electrode is disposed on the first insulation layer, and projects a second projection profile on the substrate. The second insulation layer is disposed on the first electrode and the first insulation layer. The second insulation layer has an opening, the opening exposes a portion of the first electrode, and the opening projects a third projection profile on the substrate.

公开(公告)号：US20180012549A1

公开(公告)日：2018-01-11

申请号：US15640647

申请日：2017-07-03

Applicant: InnoLux Corporation

Inventor： Kuan-Feng LEE ,  Yuan-Lin WU

IPC: H01L27/32 ,  G06F3/041

CPC classification number: G09G3/3266 ,  G06F3/0412 ,  G09G3/3225 ,  H01L27/323 ,  H01L27/3262 ,  H01L27/3276

Abstract: A display device is provided. The display device includes a substrate having a first surface and a second surface opposite to the first surface. The display device also includes a first conductive layer disposed on the first surface and a second conductive layer disposed on the second surface. The display device further includes a processing unit disposed on the second surface and is electrically connected to the processing unit and a first connective portion which at least partially disposed in the substrate, and penetrating from the first surface to the second surface, wherein the first conductive layer is electrically connected to the second conductive layer through the first connective portion.

公开(公告)号：US20180006058A1

公开(公告)日：2018-01-04

申请号：US15611835

申请日：2017-06-02

Applicant: InnoLux Corporation

Inventor： Kuan-Feng LEE

IPC: H01L27/12 ,  H01L33/56

CPC classification number: H01L27/124 ,  H01L27/1218 ,  H01L29/41733 ,  H01L29/78603 ,  H01L33/56

Abstract: A display device is provided, which includes a substrate with a concave. A light-emitting diode is disposed in the concave. A thin film transistor is disposed on a surface of the substrate, and electrically connected to the light-emitting diode. The thin film transistor and the light-emitting diode are disposed on the same side of the substrate, or disposed on different sides of the substrate.

公开(公告)号：US20170358503A1

公开(公告)日：2017-12-14

申请号：US15617191

申请日：2017-06-08

Applicant: InnoLux Corporation

Inventor： Tung-Kai LIU ,  Tsau-Hua HSIEH ,  Wei-Cheng CHU ,  Chun-Hsien LIN ,  Chandra LIUS ,  Ting-Kai HUNG ,  Kuan-Feng LEE ,  Ming-Chang LIN ,  Tzu-Min YAN ,  Hui-Chieh WANG

IPC: H01L21/66 ,  G01R31/26 ,  H01L33/00 ,  H01L25/16 ,  B65G43/08 ,  H01L33/62 ,  H01L21/288 ,  H01L21/67 ,  H01L27/12 ,  H01L33/38 ,  G09G3/32

CPC classification number: H01L22/20 ,  B65G43/08 ,  G01R31/26 ,  G09G3/32 ,  G09G2300/0426 ,  H01L21/288 ,  H01L21/67144 ,  H01L22/14 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1262 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/50 ,  H01L33/62 ,  H01L2933/0066

Abstract: A display device includes a substrate, a first transistor, a second transistor and a conductive connection portion disposed on the substrate. The first transistor is electrically connected to the gate electrode of the second transistor through the conductive connection portion. An insulating layer is disposed on the conductive connection portion.A pixel electrode is disposed on the insulating layer and is electrically connected to the second transistor. The pixel electrode is at least partially overlapped with the conductive connection portion. A light-emitting element is disposed on the pixel electrode. The conductive connection portion and the pixel electrode form a capacitor. The capacitor has an equivalent permittivity and a thickness. The ratio of the equivalent permittivity to the thickness is in a range from 0.4*(1E+5)F/m̂2 to 296.48*(1E+5)F/m̂2.

公开(公告)号：US20170301724A1

公开(公告)日：2017-10-19

申请号：US15481567

申请日：2017-04-07

Applicant: Innolux Corporation

Inventor： Kuan-Feng LEE

IPC: H01L27/15 ,  H01L27/32 ,  H01L33/52 ,  H01L25/16 ,  H01L25/075 ,  H01L25/04

CPC classification number: H01L27/156 ,  H01L25/048 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/3253 ,  H01L33/52 ,  H01L2227/323 ,  H01L2933/0033 ,  H01L2933/005

Abstract: A display apparatus includes at least one substrate with several penetration holes, several displaying units and several switch devices disposed at different sides of the at least one substrate, and at least one bonding material filling up the penetration holes, wherein the displaying units and the switch devices are connected to each other through the at least one bonding material.

公开(公告)号：US20170162606A1

公开(公告)日：2017-06-08

申请号：US15363289

申请日：2016-11-29

Applicant: InnoLux Corporation

Inventor： Tzu-Min YAN ,  Ming-Chang LIN ,  Kuan-Feng LEE

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1251 ,  G02F1/133345 ,  G02F2201/40 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/78696

Abstract: A display device is provided, which includes a substrate structure containing a substrate with a pixel region, and the pixel region includes an aperture region. A metal oxide semiconductor transistor is disposed over the substrate and includes a metal oxide semiconductor layer with a first channel region, a first gate electrode corresponding to the first channel region, and a silicon oxide insulating layer on the metal oxide semiconductor layer. The silicon oxide insulating layer includes an opening corresponding to the aperture region. A polysilicon transistor is disposed over the substrate. The display device also includes an opposite substrate structure, and a display medium between the substrate structure and the opposite substrate structure.