MANUFACTURING METHOD OF MEMS DEVICE
    231.
    发明公开

    公开(公告)号:US20240351865A1

    公开(公告)日:2024-10-24

    申请号:US18622059

    申请日:2024-03-29

    Applicant: Xintec Inc.

    Abstract: A manufacturing method of a micro electro mechanical system (MEMS) device includes forming a buffer protection layer on a semiconductor structure, wherein the semiconductor structure includes a wafer, a MEMS membrane, and an isolation layer between the wafer and the MEMS membrane, and the buffer protection layer is located in a slit of the MEMS membrane and on a surface of the MEMS membrane facing away from the isolation layer; etching the wafer to form a cavity such that a portion of the isolation layer is exposed though the cavity; etching the portion of the isolation layer; and removing the buffer protection layer.

    Chip structure and manufacturing method thereof

    公开(公告)号:US11935859B2

    公开(公告)日:2024-03-19

    申请号:US17588185

    申请日:2022-01-28

    Applicant: XINTEC INC.

    Abstract: A chip structure includes a first substrate, a second substrate, a conductive via, and a redistribution layer. The first substrate has a first inclined sidewall. The second substrate is located on a bottom surface of the first substrate, and has an upper portion and a lower portion. The lower portion extends from the upper portion. The upper portion is between the first substrate and the lower portion. The upper portion has a second inclined sidewall, and a slope of the first inclined sidewall is substantially equal to a slope of the second inclined sidewall. The conductive via is in the lower portion. The redistribution layer extends from a top surface of the first substrate to a top surface of the lower portion of the second substrate sequentially along the first inclined sidewall and the second inclined sidewall, and is electrically connected to the conductive via.

    CHIP PACKAGE AND MANUFACTURING METHOD THEREOF
    237.
    发明公开

    公开(公告)号:US20230230933A1

    公开(公告)日:2023-07-20

    申请号:US18149029

    申请日:2022-12-30

    Applicant: XINTEC INC.

    Abstract: A chip package includes a sensing element, a dam layer, and a light transmissive cover. A surface of the sensing element has a sensing area and a conductive pad. The conductive pad is adjacent to an edge of the surface of the sensing element. The dam layer is located on the surface of the sensing element and surrounds the sensing area. The dam layer has a main portion and plural mark portions. The mark portions are respectively located in plural corners of the main portion, located in a sidewall of the main portion, respectively located on plural corners of the sensing element, respectively located on plural inner edges of the main portion, or respectively located on plural outer edges of the main portion. The light transmissive cover is located on the dam layer.

    Antenna device and manufacturing method thereof

    公开(公告)号:US11695199B2

    公开(公告)日:2023-07-04

    申请号:US17407068

    申请日:2021-08-19

    Applicant: XINTEC INC.

    CPC classification number: H01Q1/38 H01Q1/526 H01Q1/243 H01Q23/00

    Abstract: An antenna device includes a first substrate, a second substrate, an antenna layer, and a redistribution layer. The first substrate has a first surface, a second surface opposite to the first surface, and an inclined sidewall adjoining the first and second surfaces. The second substrate is below the first substrate. The first surface of the first substrate faces toward the second substrate. The antenna layer is located on the first surface of the first substrate. The redistribution layer extends from the second surface of the first substrate to the second substrate along the inclined sidewall of the first substrate, and the redistribution layer has a first section in contact with an end of the antenna layer.

    CHIP PACKAGE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20230081775A1

    公开(公告)日:2023-03-16

    申请号:US17895643

    申请日:2022-08-25

    Applicant: XINTEC INC.

    Abstract: A chip package includes a semiconductor substrate, an interlayer dielectric (ILD) layer, a first metal shielding layer, and a redistribution layer. The semiconductor substrate has a first surface, a second surface facing away from the first surface, an inclined sidewall adjoining the first and second surfaces, and a through hole through the first and second surfaces. The ILD layer is located on the first surface of the semiconductor substrate, and a first conductive pad structure and a second conductive pad structure are disposed in the ILD layer. The first metal shielding layer is located on the ILD layer. A portion of the first metal shielding layer is located in the ILD layer and on the second conductive pad structure. The redistribution layer is located on the second surface of the semiconductor substrate, a wall surface of the through hole, and the first conductive pad structure.

    CHIP PACKAGE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20220384373A1

    公开(公告)日:2022-12-01

    申请号:US17750228

    申请日:2022-05-20

    Applicant: XINTEC INC.

    Abstract: A chip package includes a semiconductor structure and a redistribution layer. The semiconductor structure has a substrate, a first isolation layer, and a lower ground pad. The substrate has a top surface, a bottom surface opposite to the top surface, a through hole through the top surface and the bottom surface, and a sidewall surrounding the through hole. The first isolation layer is located on the top surface of the substrate, and the lower ground pad is located in the through hole. The redistribution layer extends from the bottom surface of the substrate to the lower ground pad along the sidewall. The redistribution layer covers the entire bottom surface of the substrate and electrically connects the lower ground pad.

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