公开(公告)号：US10319624B2

公开(公告)日：2019-06-11

申请号：US15621120

申请日：2017-06-13

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Yihong Chen ,  Kelvin Chan ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Pramit Manna

IPC: H01L21/762 ,  H01L21/28 ,  H01L21/32 ,  H01L21/8234 ,  H01L29/43

Abstract: Methods comprising forming a film on at least one feature of a substrate surface are described. The film is expanded to fill the at least one feature and cause growth of the film from the at least one feature. Methods of forming self-aligned vias are also described.

公开(公告)号：US10319591B2

公开(公告)日：2019-06-11

申请号：US15805753

申请日：2017-11-07

Applicant: Applied Materials, Inc.

Inventor： Ziqing Duan ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/321 ,  H01L21/768

Abstract: Processing methods comprising selectively replacing a first pillar material with a second pillar material in a self-aligned process are described. The first pillar material may be grown orthogonally to the substrate surface and replaced with a second pillar material to leave a substantially similar shape and alignment as the first pillar material.

公开(公告)号：US20190172723A1

公开(公告)日：2019-06-06

申请号：US15951637

申请日：2018-04-12

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Abhijit Basu Mallick ,  Pramit Manna ,  Yihong Chen

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/311

Abstract: Methods for seam-less gapfill comprising depositing a film in a feature, treating the film to change some film property and selectively etching the film from the top surface are described. The deposition, treatment and etching are repeated to form a seam-less gapfill in the feature.

公开(公告)号：US10312137B2

公开(公告)日：2019-06-04

申请号：US15175880

申请日：2016-06-07

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Susmit Singha Roy ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L27/1157 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11582

Abstract: Embodiments of the present disclosure provide an apparatus and methods for forming a hardmask layer that may be utilized to transfer patterns or features to a film stack with accurate profiles and dimension control for manufacturing three dimensional (3D) stacked semiconductor devices. In one embodiment, a method of forming a hardmask layer on a substrate includes forming a seed layer comprising boron on a film stack disposed on a substrate by supplying a seed layer gas mixture in a processing chamber, forming a transition layer comprising born and tungsten on the seed layer by supplying a transition layer gas mixture in the processing chamber, and forming a bulk hardmask layer on the transition layer by supplying a main deposition gas mixture in the processing chamber.

公开(公告)号：US20180358264A1

公开(公告)日：2018-12-13

申请号：US16006402

申请日：2018-06-12

Applicant: Applied Materials, Inc

Inventor： Yong Wu ,  Yihong Chen ,  Shishi Jiang ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285

Abstract: Methods for filling a substrate feature with a seamless tungsten fill are described. The methods include depositing a tungsten film, oxidizing the tungsten film to a tungsten oxide pillar, reducing the tungsten oxide film to a seamless tungsten gapfill and optionally depositing additional tungsten on the tungsten gapfill.

公开(公告)号：US20180358260A1

公开(公告)日：2018-12-13

申请号：US16003827

申请日：2018-06-08

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Praburam Gopalraja

IPC: H01L21/768 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/7682 ,  H01J37/32357 ,  H01J37/32715 ,  H01L21/31122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76871 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76888 ,  H01L21/76897 ,  H01L23/53266

Abstract: A first metallization layer comprises a set of first conductive lines that extend along a first direction on a first dielectric layer on a substrate. Pillars are formed on recessed first dielectric layers and a second dielectric layer covers the pillars. A dual damascene etch provides a contact hole through the second dielectric layer and an etch removes the pillars to form air gaps.

公开(公告)号：US20180358229A1

公开(公告)日：2018-12-13

申请号：US16002218

申请日：2018-06-07

Applicant: Applied Materials, Inc.

Inventor： Takehito Koshizawa ,  Eswaranand Venkatasubramanian ,  Pramit Manna ,  Chi Lu ,  Chi-I Lang ,  Nancy Fung ,  Abhijit Basu Mallick

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/3086 ,  C01B32/26 ,  C01B32/28 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/3081 ,  H01L21/31111

Abstract: A method of fabricating a semiconductor structure is described. The method comprises forming at least one mandrel on a substrate, the at least one mandrel comprising a diamond-like carbon and having a top and two opposing sidewalls, the diamond-like carbon comprising at least 40% sp3 hybridized carbon atoms. The mandrel may be used in Self-Aligned Multiple Patterning (SAMP) processes.

公开(公告)号：US20180350671A1

公开(公告)日：2018-12-06

申请号：US15986189

申请日：2018-05-22

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Kelvin Chan

IPC: H01L21/768 ,  H01L21/311 ,  H01L23/532 ,  H01L21/02 ,  H01L23/528 ,  H01L27/11556 ,  H01L27/11582 ,  H01L21/285

CPC classification number: H01L21/76877 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/28568 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/76843 ,  H01L21/76888 ,  H01L23/528 ,  H01L23/53266 ,  H01L27/11556 ,  H01L27/11582

Abstract: Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.

公开(公告)号：US20180286669A1

公开(公告)日：2018-10-04

申请号：US15945117

申请日：2018-04-04

Applicant: Applied Materials, Inc.

Inventor： Abhijit Basu Mallick ,  Pramit Manna ,  Shishi Jiang

IPC: H01L21/02 ,  H01L21/285

Abstract: Methods for seam-less gap fill comprising forming a flowable film by PECVD, treating the flowable film to form an Si—X film where X=C, O or N and curing the flowable film or Si—X film to solidify the film. The flowable film can be formed using a higher order silane and plasma. A UV cure, or other cure, can be used to solidify the flowable film or the Si—X film.

公开(公告)号：US20180218914A1

公开(公告)日：2018-08-02

申请号：US15880671

申请日：2018-01-26

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Abhijit Basu Mallick

IPC: H01L21/285 ,  H01L21/321 ,  H01L21/02

CPC classification number: H01L21/28562 ,  H01L21/02205 ,  H01L21/0226 ,  H01L21/02277 ,  H01L21/32 ,  H01L21/321 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76849 ,  H01L21/76885

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include depositing a second metal on a first metal without protecting the dielectric, protecting the metal with a cross-linked self-assembled monolayer and depositing a second dielectric on the first dielectric while the metal is protected.