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    Field-emitter fabrication using charged-particle tracks
    241.
    发明授权
    Field-emitter fabrication using charged-particle tracks 失效
    使用带电粒子轨迹的场发射器制造

    公开(公告)号：US5562516A

    公开(公告)日：1996-10-08

    申请号：US447470

    申请日：1995-05-22

    Applicant: Christopher J. Spindt ,  John M. Macaulay

    Inventor： Christopher J. Spindt ,  John M. Macaulay

    IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02

    CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

    Abstract: A gated area field emitter is fabricated according to a process in which charged-particle tracks are utilized in creating small electron-emissive elements self-aligned to corresponding gate openings in the gate electrode. The electron-emissive elements can have various shapes, including (a) a pedestal, typically a filament, having a pointed tip, (b) a cone, and (c) a combination of a pedestal and an overlying cone whose base diameter is greater than the pedestal's diameter. Each electron-emissive element can be formed as a highly resistive portion and an overlying electron-emissive portion.

    Abstract translation: 门控区域场发射器是根据一种工艺制造的，其中带电粒子轨迹用于产生与栅电极中相应的栅极开口自对准的小电子发射元件。 电子发射元件可以具有各种形状，包括（a）具有尖端的基座（通常为细丝），（b）锥体，和（c）底座和上部锥体的组合，其底部直径较大 比基座的直径。 每个电子发射元件可以形成为高电阻部分和上覆电子发射部分。

    Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
    242.
    发明授权
    Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals 失效
    具有各种构成的电子发射元件的电子发射器件，包括锥形或基座

    公开(公告)号：US5559389A

    公开(公告)日：1996-09-24

    申请号：US158102

    申请日：1993-11-24

    Applicant: Christopher J. Spindt ,  John M. Macaulay

    Inventor： Christopher J. Spindt ,  John M. Macaulay

    IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J1/30

    CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

    Abstract: A gated electron-emitting device contains a multiplicity of electron-emissive elements, each formed with a pedestal (98) and an overlying cone (94.sub.1). In each electron-emissive element, the base diameter of the cone is greater than the element, the base diameter of the cone is greater than the diameter of the pedestal. With the pedestal being electrically conductive, the cone may be electrically resistive. Alternatively, each electron-emissive element can be an elongated element (30B) that reaches a maximum diameter at a point between, and spaced apart from, both ends of the element.

    Abstract translation: 门控电子发射器件包含多个电子发射元件，每个形成有基座（98）和上覆锥体（941）。 在每个电子发射元件中，锥体的基部直径大于元件，锥体的基部直径大于基座的直径。 当基座导电时，锥体可以是电阻的。 或者，每个电子发射元件可以是细长元件（30B），该元件在该元件的两端之间的点之间达到最大直径，并且间隔开。

    Electron device
    243.
    发明授权
    Electron device 失效
    电子器件

    公开(公告)号：US5552613A

    公开(公告)日：1996-09-03

    申请号：US311463

    申请日：1994-09-22

    Applicant: Yoshiki Nishibayashi ,  Tadashi Tomikawa ,  Shin-ichi Shikata

    Inventor： Yoshiki Nishibayashi ,  Tadashi Tomikawa ,  Shin-ichi Shikata

    IPC: H01J1/304 ,  H01J9/02 ,  H01J1/02 ,  H01J1/14

    CPC classification number: H01J1/3042 ,  H01J2201/30457

    Abstract: An electron device of the present invention comprises an i-type diamond layer formed on a substrate, and an n-type diamond layer formed on the i-type diamond layer and having a first surface region formed flatly and a second surface region containing an emitter portion, which are set in a vacuum container, in which the emitter portion formed of the n-type diamond has a bottom area 10 or less .mu.m square and projects relative to the first surface region. In the n-type diamond layer, a difference is fine between the conduction band and the vacuum level. Also, since the n-type diamond layer is doped with an n-type dopant in a high concentration, metal conduction is dominant as conduction of electrons. Therefore, setting the temperature of the substrate at a predetermined temperature and generating an electric field near the surface of the emitter portion, electrons are emitted with a high efficiency from the tip portion of the emitter portion into the vacuum. Even though the emitter portion does not have a tip portion formed in a very fine shape, electrons can readily be taken out into the vacuum by the field emission with relatively small field strength. Consequently, the emission current and the current gain increase and the current density in the emitter portion decreases, thus increasing the withstand current or withstand voltage.

    Abstract translation: 本发明的电子器件包括形成在衬底上的i型金刚石层和形成在i型金刚石层上的n型金刚石层，并且具有平坦地形成的第一表面区域和包含发射极的第二表面区域 其设置在真空容器中，其中由n型金刚石形成的发射极部分的底部面积为10μm或更小，并且相对于第一表面区域突出。 在n型金刚石层中，导带和真空度之间的差异很小。 此外，由于n型金刚石层以高浓度掺杂n型掺杂剂，所以金属导电作为电子的传导是主要的。 因此，将基板的温度设定在规定的温度并在发射极部的表面附近产生电场，从发射极部的顶端向真空发射高效率的电子。 尽管发射极部分不具有形成为非常细的形状的尖端部分，但是通过具有相对小的场强的场发射，电子可以容易地被引出到真空中。 因此，发射电流和电流增益增加，并且发射极部分中的电流密度降低，从而增加了耐受电流或耐受电压。

    Diode structure flat panel display
    245.
    发明授权
    Diode structure flat panel display 失效
    二极管结构平板显示

    公开(公告)号：US5449970A

    公开(公告)日：1995-09-12

    申请号：US995846

    申请日：1992-12-23

    Applicant: Nalin Kumar ,  Chenggang Xie

    Inventor： Nalin Kumar ,  Chenggang Xie

    IPC: G09G3/22 ,  G09G3/30 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J29/08 ,  H01J29/28 ,  H01J31/12 ,  H01J61/067 ,  H01J63/06 ,  H01J1/30

    CPC classification number: H01J1/304 ,  G09G3/22 ,  H01J1/3042 ,  H01J29/085 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/06 ,  H01J9/027 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/8625 ,  H01J2329/864

    Abstract: A matrix-addressed diode flat panel display of field emission type is described, utilizing a diode (two terminal) pixel structure. The flat panel display includes a cathode assembly having a plurality of cathodes, each cathode including a layer of cathode conductive material and a layer of a low effective work-function material deposited over the cathode conductive material and an anode assembly having a plurality of anodes, each anode including a layer of anode conductive material and a layer of cathodoluminescent material deposited over the anode conductive material, the anode assembly located proximate the cathode assembly to thereby receive charged particle emissions from the cathode assembly, the cathodoluminescent material emitting light in response to the charged particle emissions. The flat panel display further includes the capability for selectively varying field emission between the plurality of corresponding light-emitting anodes and field-emission cathodes to thereby effect an addressable grey-scale operation of the flat panel display.

    Abstract translation: 利用二极管（二端）像素结构描述场发射型矩阵寻址二极管平板显示器。 平板显示器包括具有多个阴极的阴极组件，每个阴极包括阴极导电材料层和沉积在阴极导电材料上的低有效功函数材料层和具有多个阳极的阳极组件， 每个阳极包括阳极导电材料层和沉积在阳极导电材料上的阴极发光材料层，阳极组件位于阴极组件附近，从而接收来自阴极组件的带电粒子发射，阴极发光材料响应于 带电粒子排放。 平板显示器还包括用于选择性地改变多个对应的发光阳极和场致发射阴极之间的场发射的能力，从而实现平板显示器的可寻址的灰度级操作。

    Field emission device and method of making the same
    246.
    发明授权
    Field emission device and method of making the same 失效
    场发射装置及其制造方法

    公开(公告)号：US5449435A

    公开(公告)日：1995-09-12

    申请号：US970736

    申请日：1992-11-02

    Applicant: Scott K. Ageno ,  Robert C. Kane

    Inventor： Scott K. Ageno ,  Robert C. Kane

    IPC: H01J1/304 ,  H01J9/02 ,  H01L21/00 ,  B44C1/22 ,  H01J1/02

    CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30457

    Abstract: A method for forming a field emission device. A substrate is selectively patterned. An etch is performed to remove portions of the substrate to form protrusions. An oxidation is performed to the substrate that forms a first oxidized layer. A perpendicular etch is performed that removes portions of the first oxidized layer. A second oxidation is performed to the substrate that forms a second oxidized layer. A conductive or semiconductive layer is deposited onto the second oxidized layer. An etch is performed to remove a portion of the first oxidized layer and a portion of the second oxidized layer to expose the protuberance.

    Abstract translation: 一种场致发射器件的形成方法。 衬底被选择性地图案化。 执行蚀刻以去除衬底的部分以形成突起。 对形成第一氧化层的基板进行氧化。 执行去除部分第一氧化层的垂直蚀刻。 对形成第二氧化层的基板进行第二氧化。 导电或半导体层沉积到第二氧化层上。 执行蚀刻以去除第一氧化层的一部分和第二氧化层的一部分以暴露突起。

    Process and structure of an integrated vacuum microelectronic device
    250.
    发明授权
    Process and structure of an integrated vacuum microelectronic device 失效
    集成真空微电子器件的工艺和结构

    公开(公告)号：US5203731A

    公开(公告)日：1993-04-20

    申请号：US847153

    申请日：1992-03-05

    Applicant: Steven M. Zimmerman

    Inventor： Steven M. Zimmerman

    IPC: H01J9/02 ,  H01J21/10

    CPC classification number: H01J21/105 ,  H01J9/025 ,  H01J2201/30457

    Abstract: The present invention relates generally to a new integrated Vacuum Microelectronic Device (VMD) and a method for making the same. Vacuum Microelectronic Devices require several unique three dimensional structures: a sharp field emission tip, accurate alignment of the tip inside a control grid structure in a vacuum environment, and an anode to collect electrons emitted by the tip. Also disclosed is a new structure and a process for forming diodes, triodes, tetrodes, pentodes and other similar structures. The final structure made can also be connected to other similar VMD devices or to other electronic devices.

    Abstract translation: 本发明一般涉及一种新的集成真空微电子器件（VMD）及其制造方法。 真空微电子器件需要几种独特的三维结构：尖锐的场发射尖端，尖端在真空环境中的控制栅格结构内的精确对准以及用于收集尖端发射的电子的阳极。 还公开了形成二极管，三极管，四极管，五极管和其他类似结构的新结构和工艺。 所制造的最终结构也可以连接到其他类似的VMD设备或其他电子设备。

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