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    METHOD AND CONTROLLER FOR MANAGING MEMORY DEVICE
    264.
    发明申请
    METHOD AND CONTROLLER FOR MANAGING MEMORY DEVICE 有权
    用于管理存储器件的方法和控制器

    公开(公告)号：US20170062060A1

    公开(公告)日：2017-03-02

    申请号：US15163686

    申请日：2016-05-25

    Applicant: Silicon Motion Inc.

    Inventor： Tsung-Chieh Yang

    IPC: G11C16/20 ,  G11C16/26

    CPC classification number: G11C16/20 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/16 ,  G11C16/26 ,  G11C16/3422 ,  G11C16/3459

    Abstract: A method for managing a memory device includes: sending a last writing command to a specific non-volatile (NV) memory element in the memory device to write a set of data to a specific block of the specific NV memory element, rather than sending either a first writing command or a second writing command to the specific NV memory element, where these writing commands are utilized for writing to the same location at different times, respectively, in order to guarantee data correctness; and after writing the set of data to the specific block, sending a read command to the specific NV memory element to read stored data of the set of data from the specific block, and checking whether the stored data match the set of data to determine whether the specific block is a bad block.

    Abstract translation: 一种用于管理存储器件的方法包括：向存储器件中的特定非易失性（NV）存储器元件发送最后写入命令，以将一组数据写入特定NV存储器元件的特定块，而不是发送 第一写入命令或第二写入命令到特定NV存储器元件，其中这些写入命令分别用于在不同的时间写入相同的位置，以便保证数据的正确性; 并且在将该组数据写入特定块之后，向特定NV存储器元件发送读取命令以从特定块读取该组数据的存储数据，并且检查所存储的数据是否与该组数据匹配以确定是否 具体块是坏块。

    Method for Reading Data Stored in a Flash Memory According to a Threshold Voltage Distribution and Memory Controller and System Thereof
    265.
    发明申请
    Method for Reading Data Stored in a Flash Memory According to a Threshold Voltage Distribution and Memory Controller and System Thereof 审中-公开
    根据阈值电压分配和存储器控制器及其系统读取存储在闪存中的数据的方法

    公开(公告)号：US20170047122A1

    公开(公告)日：2017-02-16

    申请号：US15337485

    申请日：2016-10-28

    Applicant: Silicon Motion, Inc.

    Inventor： Tsung-Chieh Yang

    IPC: G11C16/26 ,  G11C16/34 ,  G11C16/04

    CPC classification number: G11C16/26 ,  G11C16/04 ,  G11C16/0408 ,  G11C16/06 ,  G11C16/10 ,  G11C16/16 ,  G11C16/3418 ,  G11C16/3431

    Abstract: A method for reading data stored in a flash memory is disclosed. The flash memory comprises a plurality of memory cells and each memory cell has a particular threshold voltage The method includes: obtaining a first threshold voltage distribution representing threshold voltages of a first group of the memory cells; obtaining a second threshold voltage distribution representing threshold voltages of a second group of the memory cells, wherein the second threshold voltage distribution is different from the first threshold voltage distribution, and the first group of the memory cells comprises at least a part of the second group of the memory cells; and controlling the flash memory to perform at least one read operation upon the first group of the memory cells according to the second threshold voltage distribution.

    Abstract translation: 公开了一种用于读取存储在闪速存储器中的数据的方法。 闪速存储器包括多个存储单元，每个存储单元具有特定的阈值电压。该方法包括：获得表示第一组存储器单元的阈值电压的第一阈值电压分布; 获得表示第二组存储器单元的阈值电压的第二阈值电压分布，其中第二阈值电压分布不同于第一阈值电压分布，并且第一组存储器单元包括第二组的至少一部分 的记忆细胞; 以及控制所述闪速存储器，以根据所述第二阈值电压分布对所述第一组存储器单元执行至少一次读取操作。

    Methods for accessing a storage unit of a flash memory and apparatuses using the same
    267.
    发明授权
    Methods for accessing a storage unit of a flash memory and apparatuses using the same 有权
    访问闪速存储器的存储单元的方法和使用其的装置

    公开(公告)号：US09513995B2

    公开(公告)日：2016-12-06

    申请号：US14330887

    申请日：2014-07-14

    Applicant: Silicon Motion, Inc.

    Inventor： Tsung-Chieh Yang

    IPC: G06F11/00 ,  G06F11/10 ,  G11C29/04

    CPC classification number: G06F11/108 ,  G06F11/1012 ,  G06F11/1044 ,  G06F11/1076 ,  G06F2211/109 ,  G11C2029/0411

    Abstract: An embodiment of a method for accessing a storage unit of a flash memory, performed by a processing unit, includes at least the following steps. After a notification indicating that errors presented in a message of a sector within a RAID (Redundant Array of Independent Disk) group cannot be fixed by an error correction algorithm with a horizontal ECC (Error Correction Code) of the sector is received, addresses of the other sectors within the RAID group are determined. Information is provided to a sector-decoding unit and a RAID-decoding unit, which indicates that a vertical correction procedure has been activated. Storage-unit access interfaces are directed to read content from the determined addresses of the storage unit, thereby enabling the RAID-decoding unit to recover the message of the sector by using the read content.

    Abstract translation: 用于访问由处理单元执行的闪速存储器的存储单元的方法的实施例至少包括以下步骤。 在通知指示在RAID（独立磁盘的冗余阵列）组中的扇区的消息中呈现的错误不能被接收到扇区的水平ECC（纠错码）的纠错算法固定的情况下， 确定RAID组中的其他扇区。 信息被提供给扇区解码单元和RAID解码单元，其指示垂直校正过程已被激活。 存储单元访问接口旨在从存储单元的确定的地址读取内容，从而使得RAID解码单元能够通过使用读取的内容来恢复扇区的消息。

    Flash memory controller
    268.
    发明申请
    Flash memory controller 有权

    公开(公告)号：US20160351255A1

    公开(公告)日：2016-12-01

    申请号：US15235128

    申请日：2016-08-12

    Applicant: Silicon Motion Inc.

    Inventor： Tsung-Chieh Yang ,  Chun-Chieh Kuo ,  Ching-Hui Lin ,  Yang-Chih Shen

    IPC: G11C11/56

    CPC classification number: G06F3/0634 ,  G06F3/0604 ,  G06F3/064 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2212/7201 ,  G06F2212/7206 ,  G11C11/5628 ,  G11C11/5642 ,  Y02D10/13

    Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

    Method for reading data stored in a flash memory according to a physical characteristic and memory controller and system thereof
    269.
    发明授权
    Method for reading data stored in a flash memory according to a physical characteristic and memory controller and system thereof 有权
    根据物理特性和存储器控制器及其系统读取存储在闪速存储器中的数据的方法

    公开(公告)号：US09508436B2

    公开(公告)日：2016-11-29

    申请号：US14812434

    申请日：2015-07-29

    Applicant: Silicon Motion, Inc.

    Inventor： Tsung-Chieh Yang

    IPC: G11C16/04 ,  G11C16/06 ,  G11C16/26 ,  G11C16/34 ,  G11C16/16 ,  G11C16/10

    CPC classification number: G11C16/26 ,  G11C16/04 ,  G11C16/0408 ,  G11C16/06 ,  G11C16/10 ,  G11C16/16 ,  G11C16/3418 ,  G11C16/3431

    Abstract: A method for reading data stored in a flash memory. The flash memory comprises a plurality of memory cells and each memory cell has a particular threshold voltage. The method includes: obtaining a first threshold voltage distribution representing threshold voltages of a first group of the memory cells; obtaining a second threshold voltage distribution representing threshold voltages of a second group of the memory cells, wherein the second threshold voltage distribution is different from the first threshold voltage distribution, and the first group of the memory cells comprises at least a part of the second group of the memory cells; and controlling the flash memory to perform at least one read operation upon the first group of the memory cells according to the second threshold voltage distribution.

    Abstract translation: 一种用于读取存储在闪速存储器中的数据的方法。 闪速存储器包括多个存储单元，并且每个存储单元具有特定的阈值电压。 该方法包括：获得表示第一组存储器单元的阈值电压的第一阈值电压分布; 获得表示第二组存储器单元的阈值电压的第二阈值电压分布，其中第二阈值电压分布不同于第一阈值电压分布，并且第一组存储器单元包括第二组的至少一部分 的记忆细胞; 以及控制所述闪速存储器，以根据所述第二阈值电压分布对所述第一组存储器单元执行至少一次读取操作。

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