中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

45 records (took 0.015 seconds)

    Etched-facet ridge lasers with etch-stop
    22.
    发明授权
    Etched-facet ridge lasers with etch-stop 有权
    具有蚀刻停止的蚀刻面脊激光器

    公开(公告)号：US08009711B2

    公开(公告)日：2011-08-30

    申请号：US12567448

    申请日：2009-09-25

    Applicant: Alex A. Behfar ,  Alfred T. Schremer ,  Cristian B. Stagarescu

    Inventor： Alex A. Behfar ,  Alfred T. Schremer ,  Cristian B. Stagarescu

    IPC: H01S5/00

    CPC classification number: H01S5/22 ,  H01S5/209 ,  H01S5/2214

    Abstract: A photonic device incorporates an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.

    Abstract translation: 光子器件包含具有有源区的外延结构，并且其包括在活性区上方但接近于活性区的湿蚀刻停止层。 通过干法蚀刻然后进行湿蚀刻，在外延结构上制造蚀刻小面脊激光器。 干蚀刻被设计为在读取形成脊的所需深度之前停止。 湿蚀刻完成了脊的形成，并在湿蚀刻停止层处停止。

    ETCHED-FACET RIDGE LASERS WITH ETCH-STOP
    25.
    发明申请
    ETCHED-FACET RIDGE LASERS WITH ETCH-STOP 有权

    公开(公告)号：US20100015743A1

    公开(公告)日：2010-01-21

    申请号：US12567448

    申请日：2009-09-25

    Applicant: Alex A. Behfar ,  Alfred T. Schremer ,  Cristian B. Stagarescu

    Inventor： Alex A. Behfar ,  Alfred T. Schremer ,  Cristian B. Stagarescu

    IPC: H01L21/30

    CPC classification number: H01S5/22 ,  H01S5/209 ,  H01S5/2214

    Abstract: A photonic device incorporates an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.

    Abstract translation: 光子器件包含具有有源区的外延结构，并且其包括在活性区上方但接近于活性区的湿蚀刻停止层。 通过干法蚀刻然后进行湿蚀刻，在外延结构上制造蚀刻小面脊激光器。 干蚀刻被设计为在读取形成脊的所需深度之前停止。 湿蚀刻完成了脊的形成，并在湿蚀刻停止层处停止。

    Low Cost InGaAlN Based Lasers
    26.
    发明申请
    Low Cost InGaAlN Based Lasers 有权
    低成本InGaAlN基激光器

    公开(公告)号：US20080298413A1

    公开(公告)日：2008-12-04

    申请号：US12171286

    申请日：2008-07-10

    Applicant: Alex A. Behfar ,  Wilfried Lenth

    Inventor： Alex A. Behfar ,  Wilfried Lenth

    IPC: H01S5/30 ,  H01S5/00

    CPC classification number: H01S5/0207 ,  G11B7/127 ,  G11B7/22 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/026 ,  H01S5/1039 ,  H01S5/18 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/4056 ,  H01S2301/18

    Abstract: A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length lc and width bm. Another sequence of lithography and etching is used to form a ridge structure with width won top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length ls and width bs of the chip can be selected as convenient values equal to or longer than the waveguide length lc and mesa width bm, respectively. The waveguide length and width are selected so that for a given defect density D, the yield YD is larger than 50%.

    Abstract translation: 用于产生具有良好的光学波前特征的激光器的方法和结构，例如光学存储所需要的，包括提供一种激光器，其中从激光器前刻面出射的输出光束基本上被半导体芯片的边缘阻挡，以防止有害的光束 扭曲。 半导体激光器结构在至少具有下包层，有源层，上覆层和接触层的基板上外延生长。 通过光刻定义的掩模的干蚀刻产生长度lc和宽度bm的激光台面。 使用光刻和蚀刻的另一个顺序来形成具有台面顶部的宽度的脊状结构。 蚀刻步骤还在激光波导结构的端部上形成反射镜或刻面。 芯片的长度ls和宽度bs可以分别选择等于或长于波导长度lc和台面宽度bm的方便值。 选择波导长度和宽度，使得对于给定的缺陷密度D，产量YD大于50％。

    Low cost InGaAIN based lasers
    29.
    发明授权
    Low cost InGaAIN based lasers 有权
    低成本基于InGaAIN的激光器

    公开(公告)号：US07830939B2

    公开(公告)日：2010-11-09

    申请号：US12171286

    申请日：2008-07-10

    Applicant: Alex A. Behfar ,  Wilfried Lenth

    Inventor： Alex A. Behfar ,  Wilfried Lenth

    IPC: H01S5/00 ,  H01L31/00 ,  H01L29/20

    CPC classification number: H01S5/0207 ,  G11B7/127 ,  G11B7/22 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/026 ,  H01S5/1039 ,  H01S5/18 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/4056 ,  H01S2301/18

    Abstract: A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length lc and width bm. Another sequence of lithography and etching is used to form a ridge structure with width won top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length ls and width bs of the chip can be selected as convenient values equal to or longer than the waveguide length lc and mesa width bm, respectively. The waveguide length and width are selected so that for a given defect density D, the yield YD is larger than 50%.

    Abstract translation: 用于产生具有良好的光学波前特征的激光器的方法和结构，例如光学存储所需要的，包括提供一种激光器，其中从激光器前刻面出射的输出光束基本上被半导体芯片的边缘阻挡，以防止有害的光束 扭曲。 半导体激光器结构在至少具有下包层，有源层，上覆层和接触层的基板上外延生长。 通过光刻定义的掩模的干蚀刻产生长度lc和宽度bm的激光台面。 使用光刻和蚀刻的另一个顺序来形成具有台面顶部的宽度的脊状结构。 蚀刻步骤还在激光波导结构的端部上形成反射镜或刻面。 芯片的长度ls和宽度bs可以分别选择等于或长于波导长度lc和台面宽度bm的方便值。 选择波导长度和宽度，使得对于给定的缺陷密度D，产量YD大于50％。

    Integrated photonic devices
    30.
    发明授权
    Integrated photonic devices 有权
    集成光子器件

    公开(公告)号：US07799587B2

    公开(公告)日：2010-09-21

    申请号：US11497234

    申请日：2006-08-02

    Applicant: Alex A. Behfar ,  Malcolm Green ,  Alfred T. Schremer

    Inventor： Alex A. Behfar ,  Malcolm Green ,  Alfred T. Schremer

    IPC: H01L21/00

    CPC classification number: H01S5/0264 ,  H01S5/005 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02292 ,  H01S5/0262 ,  H01S5/0683 ,  H01S5/1085 ,  H01S5/18 ,  H01S5/2022 ,  H01S5/4012 ,  H01S5/4056 ,  H01S5/4087

    Abstract: A laser (22) and detector (24) integrated on corresponding epitaxial layers of a single chip (20) cooperate with on-chip and/or external optics (62) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber (60) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.

    Abstract translation: 集成在单个芯片（20）的相应外延层上的激光器（22）和检测器（24）与片上和/或外部光学器件（62）配合，以将由激光器发射的第一波长的光耦合到单个外部 装置，例如光纤（60），并且将从外部装置接收的不同波长的光同时耦合到检测器以提供双向光子操作。 多个激光器和检测器可以集成在芯片上以提供多个双向通道。

Patent Agency Ranking