公开(公告)号：US07410916B2

公开(公告)日：2008-08-12

申请号：US11562021

申请日：2006-11-21

Applicant: Dustin W. Ho ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Visweswaren Sivaramakrishnan

Inventor： Dustin W. Ho ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Visweswaren Sivaramakrishnan

IPC: H01L21/31

CPC classification number: H01L21/31695 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351

Abstract: A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection valve, vaporizing the organosilicon compound and flowing the organosilicon compound and a carrier gas into the processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, flowing a porogen compound from a bulk storage container through a digital liquid flow meter at a porogen flow rate to a vaporization injection valve, vaporizing the porogen compound and flowing the porogen compound and a carrier gas into the processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and maintaining a second organosilicon flow rate and a second porogen flow rate to deposit a porogen containing organosilicate dielectric layer.

Abstract translation: 一种通过使氧化气体流入处理室来沉积低介电常数膜的方法，使有机硅化合物从大容量储存容器通过数字液体流量计以有机硅流速流动到汽化喷射阀，汽化有机硅化合物和 使有机硅化合物和载气流入处理室，保持有机硅流速沉积起始层，使致孔剂化合物从大容量储存容器通过数字液体流量计以致孔剂流速流动到蒸发喷射阀， 蒸发致孔剂化合物并使致孔剂化合物和载气流入处理室，同时沉积过渡层而增加有机硅流速和致孔剂流速，并保持第二有机硅流速和第二致孔剂流速以沉积 含致孔剂的有机硅酸盐介电层。

公开(公告)号：US06831284B2

公开(公告)日：2004-12-14

申请号：US10301508

申请日：2002-11-21

Applicant: Alexandros T. Demos ,  Hari K. Ponnekanti ,  Jun Zhao ,  Helen R. Armer ,  William R. Livesay ,  Scott C. Woods

Inventor： Alexandros T. Demos ,  Hari K. Ponnekanti ,  Jun Zhao ,  Helen R. Armer ,  William R. Livesay ,  Scott C. Woods

IPC: G21K502

CPC classification number: H01J37/06 ,  H01J37/317 ,  H01J2237/316

Abstract: An electron beam apparatus that includes a vacuum chamber, a large-area cathode disposed in the vacuum chamber, and a first power supply connected to the cathode. The first power supply is configured to apply a negative voltage to the cathode sufficient to cause the cathode to emit electrons toward a substrate disposed in the vacuum chamber. The electron beam apparatus further includes an anode positioned between the large-area cathode and the substrate. The anode is made from aluminum. The electron beam apparatus further includes a second power supply connected to the anode, wherein the second power supply is configured to apply a voltage to the anode that is positive relative to the voltage applied to the cathode.

公开(公告)号：US20110100394A1

公开(公告)日：2011-05-05

申请号：US12987948

申请日：2011-01-10

Applicant: Sang In Yi ,  Kelvin Chan ,  Thomas Nowak ,  Alexandros T. Demos

Inventor： Sang In Yi ,  Kelvin Chan ,  Thomas Nowak ,  Alexandros T. Demos

IPC: B08B7/00

CPC classification number: H01L21/67028 ,  B08B7/0057 ,  H01L21/67115 ,  H01L21/6719

Abstract: A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.

Abstract translation: 一种用于清洁衬底处理室的方法，包括在限定一个或多个处理区域的处理室内处理一批衬底。 处理批次的基板可以在具有各种子步骤的子程序中执行，该子程序包括在处理室内处理来自批料的基板，从处理室移除基板，将臭氧引入处理室，以及将该室暴露于 紫外线不到一分钟。 可以重复衬底批处理子步骤，直到处理批次中的最后一个衬底。 在批次处理最后一个基板之后，该方法包括从处理室移除最后的基板，将臭氧引入处理室; 并将处理室暴露于紫外光下3至15分钟。

公开(公告)号：US07790583B2

公开(公告)日：2010-09-07

申请号：US11925611

申请日：2007-10-26

Applicant: Alexandros T. Demos ,  Khaled A. Elsheref ,  Josphine J. Chang ,  Hichem M'saad

Inventor： Alexandros T. Demos ,  Khaled A. Elsheref ,  Josphine J. Chang ,  Hichem M'saad

IPC: H01L21/20

CPC classification number: B08B7/0035 ,  B82Y10/00 ,  B82Y40/00 ,  C23C16/4405 ,  C23C16/56 ,  H01J37/3174 ,  Y10S438/905

Abstract: One embodiment of the present invention is a method for cleaning an electron beam treatment apparatus that includes: (a) generating an electron beam that energizes a cleaning gas in a chamber of the electron beam treatment apparatus; (b) monitoring an electron beam current; (c) adjusting a pressure of the cleaning gas to maintain the electron beam current at a substantially constant value; and (d) stopping when a predetermined condition has been reached.

Abstract translation: 本发明的一个实施例是一种清洗电子束处理装置的方法，其包括：（a）产生电子束，该电子束激励电子束处理装置的腔室中的清洁气体; （b）监测电子束电流; （c）调节清洁气体的压力以将电子束电流保持在基本恒定的值; 和（d）当达到预定条件时停止。

公开(公告)号：US20100018548A1

公开(公告)日：2010-01-28

申请号：US12178523

申请日：2008-07-23

Applicant: Sang In Yi ,  Kelvin Chan ,  Thomas Nowak ,  Alexandros T. Demos

Inventor： Sang In Yi ,  Kelvin Chan ,  Thomas Nowak ,  Alexandros T. Demos

IPC: B08B7/00

CPC classification number: H01L21/67028 ,  B08B7/0057 ,  H01L21/67115 ,  H01L21/6719

Abstract: A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.

Abstract translation: 一种用于清洁衬底处理室的方法，包括在限定一个或多个处理区域的处理室内处理一批衬底。 处理批次的基板可以在具有各种子步骤的子程序中执行，该子程序包括在处理室内处理来自批料的基板，从处理室移除基板，将臭氧引入处理室，并将该室暴露于 紫外线不到一分钟。 可以重复基底批处理子步骤，直到处理批次中的最后一个基底。 在批次处理最后一个基板之后，该方法包括从处理室移除最后的基板，将臭氧引入处理室; 并将处理室暴露于紫外光下3至15分钟。

公开(公告)号：US20090017231A1

公开(公告)日：2009-01-15

申请号：US12183915

申请日：2008-07-31

Applicant: Kang Sub Yim ,  Alexandros T. Demos

Inventor： Kang Sub Yim ,  Alexandros T. Demos

IPC: H05H1/24

CPC classification number: C23C16/401 ,  C23C16/56

Abstract: A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si—CX—Si or —Si—O—(CH2)n—O—Si—. Low dielectric constant films provided herein include films that include Si—CX—Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties, and a desirable dielectric constant.

Abstract translation: 提供了一种在基片上沉积低介电常数膜的方法。 低介电常数膜通过包括使一种或多种有机硅化合物和致孔剂反应的方法沉积，然后对膜进行后处理以在膜中产生孔。 一种或多种有机硅化合物包括具有通式结构Si-CX-Si或-Si-O-（CH2）n-O-Si-的化合物。 本文提供的低介电常数膜包括在膜的后处理之前和之后包括Si-CX-Si键的膜。 低介电常数膜具有良好的机械和粘附性能以及期望的介电常数。

公开(公告)号：US07256139B2

公开(公告)日：2007-08-14

申请号：US11045650

申请日：2005-01-28

Applicant: Farhad Moghadam ,  Jun Zhao ,  Timothy Weidman ,  Rick J. Roberts ,  Li-Quan Xia ,  Alexandros T. Demos

Inventor： Farhad Moghadam ,  Jun Zhao ,  Timothy Weidman ,  Rick J. Roberts ,  Li-Quan Xia ,  Alexandros T. Demos

IPC: H01L21/31

CPC classification number: B05D1/60 ,  B05D3/068 ,  B05D3/141 ,  B05D5/08 ,  B05D5/12 ,  C08G77/50 ,  C23C16/26 ,  C23C16/401 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/0276 ,  H01L21/0277 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/3146 ,  H01L21/3148 ,  H01L21/316 ,  H01L21/31625 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76829

Abstract: One embodiment of the present invention is a method for fabricating a low-k dielectric film that included steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.

Abstract translation: 本发明的一个实施例是一种制造低k电介质膜的方法，包括以下步骤：（a）化学气相沉积低k电介质膜; 和（b）电子束处理低k电介质膜。

公开(公告)号：US07045798B2

公开(公告)日：2006-05-16

申请号：US10784315

申请日：2004-02-20

Applicant: Khaled A. Elsheref ,  Alexandros T. Demos ,  Hichem M'saad

Inventor： Khaled A. Elsheref ,  Alexandros T. Demos ,  Hichem M'saad

IPC: G01N25/00 ,  H01L21/00 ,  H01J37/30

CPC classification number: H01J37/077 ,  H01J37/304 ,  H01J2237/06366 ,  H01J2237/30433

Abstract: One embodiment of the present invention is a method for characterizing an electron beam treatment apparatus that includes: (a) e-beam treating one or more of a predetermined type of wafer or substrate utilizing one or more sets of electron beam treatment para meters; (b) making post-electron beam treatment measurements of intensity of a probe beam reflected from the surface of the one or more wafers in which thermal and/or plasma waves have been induced; and (c) developing data from the post-electron beam treatment measurements that provide insight into performance of the electron beam treatment apparatus.

Abstract translation: 本发明的一个实施例是一种用于表征电子束处理装置的方法，其包括：（a）利用一组或多组电子束处理对数器电子束处理预定类型的晶片或衬底中的一种或多种; （b）进行电子束处理测量从已经引起热和/或等离子体波的一个或多个晶片的表面反射的探针光束的强度; 和（c）从后期电子束处理测量中开发数据，其提供对电子束处理设备的性能的洞察。

公开(公告)号：US06576568B2

公开(公告)日：2003-06-10

申请号：US09823932

申请日：2001-03-29

Applicant: Robert P Mandal ,  Alexandros T Demos ,  Timothy Weidman ,  Michael P Nault ,  Nikolaos Bekiaris ,  Scott J Weigel ,  Lee A. Senecal ,  James E. MacDougall ,  Hareesh Thridandam

Inventor： Robert P Mandal ,  Alexandros T Demos ,  Timothy Weidman ,  Michael P Nault ,  Nikolaos Bekiaris ,  Scott J Weigel ,  Lee A. Senecal ,  James E. MacDougall ,  Hareesh Thridandam

IPC: H01L2131

CPC classification number: H01L21/02126 ,  C01B33/16 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  Y10S438/96 ,  Y10T428/249953 ,  Y10T428/249969

Abstract: A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution. In some embodiments, the ionic additive is a compound chosen from a group of cationic additives of the general composition [NR(CH3)3]+A−, where R is a hydrophobic ligand of chain length 1 to 24, including tetramethylammonium and cetyltrimethylammonium, and A− is an anion, which may be chosen from the group consisting essentially of formate, nitrate, oxalate, acetate, phosphate, carbonate, and hydroxide and combinations thereof. Tetramethylammonium salts, or more generally tetraalkylammonium salts, or tetraorganoammonium salts or organoamines in acidic media are added to surfactant templated porous oxide precursor formulations to increase the ionic content, replacing alkali ion impurities (sodium and potassium) removed during surfactant purification, but which are found to exhibit beneficial effects in promoting the formation of the resulting dielectric.

公开(公告)号：US08664061B2

公开(公告)日：2014-03-04

申请号：US13011946

申请日：2011-01-24

Applicant: Bo Xie ,  Alexandros T. Demos ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja

Inventor： Bo Xie ,  Alexandros T. Demos ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja

IPC: H01L21/28 ,  H01L21/8242

CPC classification number: H01L28/40 ,  H01L21/3105 ,  H01L28/90

Abstract: The present invention provides systems, methods and apparatus for manufacturing a memory cell. The invention includes forming a feature having sidewalls in a first dielectric material; forming a first conductive material on the sidewalls of the feature; depositing a layer of a second dielectric material on the conductive material; and exposing the second dielectric material to oxidizing species and ultraviolet light to oxidize the second dielectric material. Numerous additional aspects are disclosed.

Abstract translation: 本发明提供用于制造存储单元的系统，方法和装置。 本发明包括在第一介电材料中形成具有侧壁的特征; 在所述特征的侧壁上形成第一导电材料; 在导电材料上沉积第二介电材料层; 以及将所述第二电介质材料暴露于氧化物质和紫外光以氧化所述第二电介质材料。 公开了许多附加方面。