Flip chip light emitting diode devices having thinned or removed substrates
    21.
    发明授权
    Flip chip light emitting diode devices having thinned or removed substrates 有权
    倒装芯片发光二极管器件具有减薄或移除的衬底

    公开(公告)号:US07456035B2

    公开(公告)日:2008-11-25

    申请号:US10899864

    申请日:2004-07-27

    Abstract: In a method for fabricating a flip-chip light emitting diode device, epitaxial layers (14, 114) are deposited on a growth substrate (16, 116) to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die (10, 110). The device die (10, 110) is flip chip bonded to a mount (12, 112). The flip chip bonding includes securing the device die (10, 110) to the mount (12, 112) by bonding at least one electrode (20, 22, 120) of the device die (10, 110) to at least one bonding pad (26, 28, 126) of the mount (12, 112). Subsequent to the flip chip bonding, a thickness of the growth substrate (16, 116) of the device die (10, 110) is reduced.

    Abstract translation: 在制造倒装芯片发光二极管器件的方法中,外延层(14,114)沉积在生长衬底(16,116)上以产生外延晶片。 在外延晶片上制造多个发光二极管器件。 切割外延晶片以产生器件管芯(10,110)。 器件管芯(10,110)被倒装芯片结合到安装件(12,112)上。 倒装芯片接合包括通过将器件管芯(10,110)的至少一个电极(20,22,120)粘合到至少一个焊盘(10,110)上来将器件管芯(10,110)固定到安装座(12,112) (12,112)的底部(26,28,126)。 在倒装芯片接合之后,器件管芯(10,110)的生长衬底(16,116)的厚度减小。

    Super bright LED power package
    22.
    发明申请
    Super bright LED power package 审中-公开
    超亮LED电源包

    公开(公告)号:US20070236956A1

    公开(公告)日:2007-10-11

    申请号:US11394895

    申请日:2006-03-31

    CPC classification number: G02B6/0008 F21S41/00 F21Y2115/10 G02B3/00 G02B6/04

    Abstract: At least two light emitting diodes emit a non-parallel light beam. A condensing system, operationally coupled with the light emitting diodes, receives the emitted non-parallel light beam and converts the received non-parallel light beam into a parallel light beam. A non-imaging concentrator includes an input surface which collects the parallel light beam, and an output surface, which includes phosphor material and outputs light.

    Abstract translation: 至少两个发光二极管发射非平行光束。 与发光二极管可操作地耦合的冷凝系统接收所发射的非平行光束并将接收到的非平行光束转换为平行光束。 非成像集中器包括收集平行光束的输入表面和包括磷光体材料并输出光的输出表面。

    Omnidirectional LED based solid state lamp
    26.
    发明授权
    Omnidirectional LED based solid state lamp 有权
    全方位LED固态灯

    公开(公告)号:US08757836B2

    公开(公告)日:2014-06-24

    申请号:US13005970

    申请日:2011-01-13

    Abstract: A lighting apparatus includes a bilaterally symmetrical light engine comprising first and second light emitting diode (LED) devices or planar LED device arrays facing opposite directions, and an envelope including phosphor spaced apart from and surrounding the bilaterally symmetrical light engine. The phosphor is effective to convert light emitted by the light engine to emission light. The bilaterally symmetrical light engine may be configured to emit light having a bilaterally symmetrical intensity distribution that is uniform except at emission angles within 10° of the symmetry plane of the bilaterally symmetrical light engine. Each of the first and second LED devices or planar LED device arrays may comprise at least one hemispherically emitting LED device including an LED chip and an encapsulant encapsulating the LED chip and shaped to refract light emitted by the LED chip into a uniform distribution over a hemispherical solid angle.

    Abstract translation: 一种照明装置,包括双面对称的光引擎,其包括面向相反方向的第一和第二发光二极管(LED)器件或平面LED器件阵列,以及包括与双侧对称光引擎隔开并围绕其的荧光体的外壳。 荧光体有效地将由光引擎发射的光转换成发射光。 双侧对称光引擎可以被配置为发射具有双向对称强度分布的光,除了在双边对称光引擎的对称平面的10°内的发射角度下,其均匀。 第一和第二LED器件或平面LED器件阵列中的每一个可以包括至少一个半射发射LED器件,其包括LED芯片和封装LED芯片的密封剂,并且被成形为将由LED芯片发射的光折射成半球形的均匀分布 立体角。

    Lighting device having illumination, backlighting and display applications
    27.
    发明授权
    Lighting device having illumination, backlighting and display applications 有权
    照明设备具有照明,背光和显示应用

    公开(公告)号:US08299701B2

    公开(公告)日:2012-10-30

    申请号:US12005583

    申请日:2007-12-27

    Abstract: Provided are a lighting device, a backlighting device, and a display device that comprise a radiation source such as LED and wavelength converting members comprising phosphors. In one embodiment, self-absorption within the devices is suppressed or reduced by placing a selective reflector between two wavelength converting members, and the wavelength converting member emitting light with longer peak wavelength is substantially isolated from the irradiation of another wavelength converting member emitting light with shorter peak wavelength. In other embodiments, the wavelength converting members are arranged in strip configuration; or in adjacent hexagons configuration.

    Abstract translation: 提供了包括诸如LED的辐射源和包括磷光体的波长转换构件的照明装置,背光装置和显示装置。 在一个实施例中,通过在两个波长转换构件之间放置选择性反射器来抑制或减小器件内的自吸收,并且发射具有较长峰值波长的光的波长转换构件基本上与发射具有 较短的峰值波长。 在其他实施例中,波长转换构件被布置成带状构造; 或相邻的六边形配置。

    Support with recessed electrically conductive chip attachment material for flip-chip bonding a light emitting chip
    29.
    发明授权
    Support with recessed electrically conductive chip attachment material for flip-chip bonding a light emitting chip 失效
    支持嵌入式导电芯片附件材料,用于倒装芯片接合发光芯片

    公开(公告)号:US07635869B2

    公开(公告)日:2009-12-22

    申请号:US11520905

    申请日:2006-09-14

    Abstract: In a light emitting device, a light emitting chip (12, 112) includes a stack of semiconductor layers (14) and an electrode (24, 141, 142) disposed on the stack of semiconductor layers. A support (10, 10′, 110, 210) has a generally planar surface (30) supporting the light emitting chip in a flip-chip fashion. An electrically conductive chip attachment material (40, 41, 141, 142) is recessed into the generally planar surface of the support such that the attachment material does not protrude substantially above the generally planar surface of the support. The attachment material provides electrical communication between the electrode of the light emitting chip and an electrically conductive path (36, 36′) of the support. Optionally, at least the stack of semiconductor layers and the electrode of the light emitting chip are also recessed into the generally planar surface of the support.

    Abstract translation: 在发光器件中,发光芯片(12,112)包括堆叠的半导体层(14)和设置在半导体层堆叠上的电极(24,141,142)。 支撑件(10,10',110,210)具有以倒装芯片方式支撑发光芯片的大致平坦的表面(30)。 导电芯片附接材料(40,41,141,142)凹入到支撑件的大致平坦的表面中,使得附接材料基本不突出在支撑体的大致平坦的表面上方。 附着材料提供发光芯片的电极与支撑体的导电路径(36,36')之间的电连通。 可选地,至少半导体层的叠层和发光芯片的电极也凹入到支撑体的大致平坦的表面中。

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