公开(公告)号：US20060094191A1

公开(公告)日：2006-05-04

申请号：US11261737

申请日：2005-10-28

Applicant: Han-Mei Choi ,  Kyoung-Ryul Yoon ,  Seung-Hwan Lee ,  Ki-Yeon Park ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo

Inventor： Han-Mei Choi ,  Kyoung-Ryul Yoon ,  Seung-Hwan Lee ,  Ki-Yeon Park ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo

IPC: H01L21/336 ,  H01L21/3205

CPC classification number: H01L21/0228 ,  H01L21/02189 ,  H01L21/28273 ,  H01L21/3141 ,  H01L21/31641 ,  H01L27/11521

Abstract: A method of manufacturing a semiconductor device can include forming a tunnel oxide layer on a substrate, forming a floating gate on the tunnel oxide layer and forming a dielectric layer pattern on the floating gate using an ALD process. The dielectric layer pattern can include a metal precursor that includes zirconium and an oxidant. A control gate can be formed on the dielectric layer pattern. The semiconductor device can include the dielectric layer pattern provided herein.

Abstract translation: 制造半导体器件的方法可以包括在衬底上形成隧道氧化物层，在隧道氧化物层上形成浮栅，并使用ALD工艺在浮栅上形成电介质层图案。 介电层图案可以包括包含锆和氧化剂的金属前体。 可以在电介质层图案上形成控制栅极。 半导体器件可以包括本文提供的电介质层图案。

公开(公告)号：US20060046387A1

公开(公告)日：2006-03-02

申请号：US11180172

申请日：2005-07-13

Applicant: Han-Mei Choi ,  Jong-Cheol Lee ,  Seung-Hwan Lee ,  Dae-Sik Choi ,  Ki-Yeon Park ,  Young-sun Kim ,  Cha-Young Yoo ,  Sung-Tae Kim

Inventor： Han-Mei Choi ,  Jong-Cheol Lee ,  Seung-Hwan Lee ,  Dae-Sik Choi ,  Ki-Yeon Park ,  Young-sun Kim ,  Cha-Young Yoo ,  Sung-Tae Kim

IPC: H01L21/336

CPC classification number: H01L27/11521 ,  H01L27/115 ,  H01L29/40114 ,  H01L29/513 ,  H01L29/7881

Abstract: Flash memory devices include a semiconductor substrate having an active region. A gate pattern on the active region includes a floating gate pattern and a control gate pattern with an inter-gate dielectric layer pattern therebetween. The inter-gate dielectric layer pattern includes a plurality of hafnium oxide layers and a plurality of aluminum oxide layers, ones of which are alternately arrayed.

Abstract translation: 闪存器件包括具有有源区的半导体衬底。 有源区上的栅极图案包括浮置栅极图案和其间具有栅极间介电层图案的控制栅极图案。 栅极间电介质层图案包括多个氧化铪层和多个氧化铝层，其中一个氧化铝交替排列。

公开(公告)号：US06946342B2

公开(公告)日：2005-09-20

申请号：US10452979

申请日：2003-06-02

Applicant: Jae-Hyun Yeo ,  Sung-Tae Kim ,  Young-Sun Kim ,  In-Sung Park ,  Seok-Jun Won ,  Yun-Jung Lee ,  Ki-Vin Im ,  Ki-Yeon Park

Inventor： Jae-Hyun Yeo ,  Sung-Tae Kim ,  Young-Sun Kim ,  In-Sung Park ,  Seok-Jun Won ,  Yun-Jung Lee ,  Ki-Vin Im ,  Ki-Yeon Park

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/469 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC classification number: H01L21/02271 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691 ,  H01L28/40

Abstract: A semiconductor device and a method for forming the same. A dielectric layer is formed on a semiconductor substrate or on a lower electrode of a capacitor. Vacuum annealing is performed on the dielectric layer. Thus, impurities remaining in the dielectric layer can be effectively removed, and the dielectric layer can be densified. As a result, the electrical characteristics of the semiconductor device are improved. For example, the leakage current characteristics of the dielectric layer are improved and capacitance is increased.

公开(公告)号：US09070981B2

公开(公告)日：2015-06-30

申请号：US13314446

申请日：2011-12-08

Applicant: Ki Yeon Park ,  Seong Ho Yoon ,  Eun Seok Hong

Inventor： Ki Yeon Park ,  Seong Ho Yoon ,  Eun Seok Hong

IPC: H01Q17/00 ,  B32B38/08 ,  H05K9/00

CPC classification number: H01Q17/00 ,  B32B38/08 ,  B32B2305/076 ,  B32B2307/204 ,  B32B2307/208 ,  B32B2315/085 ,  B32B2363/00 ,  B32B2457/00 ,  H05K9/0088

Abstract: A multi layer electromagnetic wave absorber is provided. The absorber includes a surface layer comprising at least one of a dielectric lossy mixture and a magnetic lossy mixture, an absorption layer, laminated on a rear side of the surface layer, comprising: a dielectric lossy mixture having a higher loss than the dielectric lossy mixture for the surface layer, and a magnetic lossy mixture having a higher loss than the magnetic lossy mixture for the surface layer, and a boundary layer, laminated on a rear side of the absorption layer, comprising a conductive material.

Abstract translation: 提供多层电磁波吸收体。 吸收体包括表面层，该表面层包含介电损耗混合物和磁损耗混合物中的至少一种，层压在表面层后侧的吸收层，包括：具有比介电损耗混合物更高损耗的介电损耗混合物 并且具有比用于表面层的磁损耗混合物损失高的磁损耗混合物，以及叠层在吸收层后侧的边界层，其包含导电材料。

公开(公告)号：US08723250B2

公开(公告)日：2014-05-13

申请号：US13042871

申请日：2011-03-08

Applicant: Jong-cheol Lee ,  Ki-yeon Park ,  Chun-hyung Chung ,  Cha-young Yoo

Inventor： Jong-cheol Lee ,  Ki-yeon Park ,  Chun-hyung Chung ,  Cha-young Yoo

IPC: H01L21/768 ,  H01L49/02

CPC classification number: H01L21/76835 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/76831 ,  H01L27/10808 ,  H01L28/40 ,  H01L28/55 ,  H01L29/7881 ,  H01L29/792

Abstract: An electronic device includes a lower layer, a complex dielectric layer on the lower layer, and an upper layer on the complex dielectric layer. The complex dielectric layer includes an amorphous metal silicate layer and a crystalline metal-based insulating layer thereon. Related fabrication methods are also discussed.

Abstract translation: 电子器件包括下层，下层上的复合电介质层和复合介电层上的上层。 复合电介质层包括无定形金属硅酸盐层和结晶金属基绝缘层。 还讨论了相关的制造方法。

公开(公告)号：US08710564B2

公开(公告)日：2014-04-29

申请号：US13418472

申请日：2012-03-13

Applicant: Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

Inventor： Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

IPC: H01L27/108

CPC classification number: H01L29/51 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/65 ,  H01L29/513

Abstract: Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode.

Abstract translation: 本发明提供一种半导体器件，其具有立方晶系或四方晶系的绝缘层，具有良好的电特性。 半导体器件包括：半导体衬底，包括有源区，形成在半导体衬底的有源区中的晶体管，形成在半导体衬底上的层间绝缘层和形成在层间绝缘层中的接触插塞;以及 其电连接到晶体管。 半导体器件可以包括形成在层间绝缘层上并且与电性连接的接触插塞的下电极，形成在下电极上的上电极和立方体系的绝缘层或包括 金属硅酸盐层。 绝缘层可以形成在下电极和上电极之间。

公开(公告)号：US20130027115A1

公开(公告)日：2013-01-31

申请号：US13543262

申请日：2012-07-06

Applicant: Ki Yeon PARK ,  Se Young JANG ,  Chul Eun Yun

Inventor： Ki Yeon PARK ,  Se Young JANG ,  Chul Eun Yun

IPC: H03K3/02

CPC classification number: G05D23/1951

Abstract: A method for controlling a temperature of a terminal and a terminal supporting the same are provided. A terminal supporting temperature control includes a temperature sensor for detecting a temperature of the terminal, and a controller for performing at least one of a first throttle procedure including driving the controller with a first preset driving frequency when the temperature of the terminal detected by the temperature sensor is a first preset temperature, and driving the controller with a second driving frequency higher than the first driving frequency when the temperature of the terminal is reduced to a second preset temperature lower than the first preset temperature, and a second throttle procedure including driving the controller with the first preset driving frequency for a first time, and driving the controller with the second driving frequency higher than the first driving frequency for a second time after the first time elapses.

Abstract translation: 提供了一种用于控制终端和支持终端的终端的温度的方法。 终端支持温度控制包括用于检测终端的温度的温度传感器，以及控制器，用于当由温度检测到的终端的温度时，执行包括以第一预设驱动频率驱动控制器的第一节流程序中的至少一个 传感器是第一预设温度，并且当端子的温度降低到比第一预设温度低的第二预设温度时，以比第一驱动频率高的第二驱动频率驱动控制器，以及第二节流程序，包括驱动 具有第一预设驱动频率的控制器，并且在第一次经过第二次之后，以比第一驱动频率高的第二驱动频率驱动控制器。

公开(公告)号：US08361551B2

公开(公告)日：2013-01-29

申请号：US12648377

申请日：2009-12-29

Applicant: Jong-Cheol Lee ,  Ki-Yeon Park ,  Jun-Noh Lee

Inventor： Jong-Cheol Lee ,  Ki-Yeon Park ,  Jun-Noh Lee

IPC: C23C16/40

CPC classification number: C23C16/4554 ,  C23C16/45531 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/3141 ,  H01L28/60 ,  H01L29/66575 ,  H01L29/78

Abstract: In a method of forming a target layer having a uniform composition of constituent materials, a first precursor including a first central atom and a ligand is chemisorbed on a first reaction site of an object. The ligand or the first central atom is then removed to form a second reaction site. A second precursor including a second central atom is then chemisorbed on the second reaction site.

Abstract translation: 在形成具有均匀构成材料组成的目标层的方法中，包括第一中心原子和配体的第一前体在物体的第一反应位置被化学吸附。 然后除去配体或第一中心原子以形成第二反应位点。 包括第二中心原子的第二前体然后在第二反应位点被化学吸附。

公开(公告)号：US20110104907A1

公开(公告)日：2011-05-05

申请号：US12909947

申请日：2010-10-22

Applicant: Jong-cheol LEE ,  Ki-yeon PARK ,  Se-hoon OH ,  Youn-soo KIM

Inventor： Jong-cheol LEE ,  Ki-yeon PARK ,  Se-hoon OH ,  Youn-soo KIM

IPC: H01L21/283 ,  B05D5/12

CPC classification number: C23C16/401 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02145 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02208 ,  H01L21/0228 ,  H01L28/40

Abstract: Methods of forming a metal silicate layer and methods of fabricating a semiconductor device including the metal silicate layer are provided, the methods of forming the metal silicate layer include forming the metal silicate using a plurality of silicon precursors. The silicon precursors are homoleptic silicon precursors in which ligands bound to silicon have the same molecular structure.

Abstract translation: 提供形成金属硅酸盐层的方法和制造包括金属硅酸盐层的半导体器件的方法，形成金属硅酸盐层的方法包括使用多个硅前体形成金属硅酸盐。 硅前体是其中与硅结合的配体具有相同分子结构的均质硅前体。

公开(公告)号：US07560349B2

公开(公告)日：2009-07-14

申请号：US11366453

申请日：2006-03-03

Applicant: Ki-Yeon Park ,  Kyoung-Ryul Yoon ,  Dae-Sik Choi ,  Han-Mei Choi ,  Seung-Hwan Lee

Inventor： Ki-Yeon Park ,  Kyoung-Ryul Yoon ,  Dae-Sik Choi ,  Han-Mei Choi ,  Seung-Hwan Lee

IPC: H01L21/336 ,  H01L21/3205

CPC classification number: H01L21/022 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02247 ,  H01L21/0228 ,  H01L21/28273 ,  H01L21/318 ,  H01L29/513 ,  H01L29/7881

Abstract: A semiconductor device and/or gate structure having a composite dielectric layer and methods of manufacturing the same is provided. In the semiconductor device, gate structure, and methods provided, a first conductive layer may be formed on a substrate. A native oxide layer formed on the first conductive layer may be removed. A surface of the first conductive layer may be nitrided so that the surface may be altered into a nitride layer. A composite dielectric layer including the first and/or second dielectric layers may be formed on the nitride layer. A second conductive layer may be formed on the composite dielectric layer. The first dielectric layer may include a material having a higher dielectric constant. The second dielectric layer may be capable of suppressing crystallization of the first dielectric layer.