公开(公告)号：US5892254A

公开(公告)日：1999-04-06

申请号：US940258

申请日：1997-09-30

Applicant: Chang-soo Park ,  Sang-in Lee ,  Hong-ku Paik

Inventor： Chang-soo Park ,  Sang-in Lee ,  Hong-ku Paik

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/285 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L29/92 ,  H01L29/76 ,  H01L23/48 ,  H01L23/52 ,  H01L29/94

CPC classification number: H01L21/7687 ,  H01L21/76841 ,  H01L21/76849 ,  H01L21/76855 ,  H01L28/60 ,  H01L28/75 ,  H01L21/28568 ,  H01L28/55

Abstract: A barrier layer is included in an integrated circuit capacitor, between a conductive plug and a lower capacitor electrode. The barrier layer includes refractory metal and grain boundary filling material. The grain boundary filling material preferably is Ce, Zr, Y, Th, Hf, La, Al and/or oxides thereof, and is preferably less that 20 atomic percent of the barrier layer. The barrier layer can reduce and preferably prevent diffusion of oxygen, and can thereby reduce the leakage current and oxidation of the integrated circuit capacitor.

Abstract translation: 在集成电路电容器中包括阻挡层，在导电插塞和下电容器电极之间。 阻挡层包括难熔金属和晶界填充材料。 晶界填充材料优选为Ce，Zr，Y，Th，Hf，La，Al和/或其氧化物，优选小于阻挡层的20原子％。 阻挡层可以减少并优选地防止氧的扩散，从而可以减小集成电路电容器的漏电流和氧化。

公开(公告)号：US5846859A

公开(公告)日：1998-12-08

申请号：US606193

申请日：1996-02-23

Applicant: Sang-in Lee

Inventor： Sang-in Lee

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/285 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

CPC classification number: H01L27/10852 ,  H01L28/55 ,  H01L28/60 ,  H01L21/28568 ,  Y10S148/148

Abstract: A capacitor in a semiconductor device having a dielectric film formed of high dielectric material and a manufacturing method therefor are provided. The capacitor consists of electrodes including a dielectric film and an amorphous SiC layer. Thus, the diffusion of oxygen atoms through a grain boundary into an underlayer and the formation of an oxide layer on the surface of the SiC layer can both be prevented, providing for a highly reliable capacitor electrode and an equivalent oxide thickness which is no thicker than required.

Abstract translation: 提供了具有由高介电材料形成的电介质膜的半导体器件中的电容器及其制造方法。 电容器由包括电介质膜和非晶SiC层的电极组成。 因此，可以防止氧原子通过晶界扩散到底层中，并且可以防止在SiC层的表面上形成氧化物层，从而提供高可靠性的电容器电极和等于不比厚度大的氧化物厚度 需要。

公开(公告)号：US5589713A

公开(公告)日：1996-12-31

申请号：US456732

申请日：1995-06-01

Applicant: Sang-in Lee ,  Chang-soo Park

Inventor： Sang-in Lee ,  Chang-soo Park

IPC: H01L21/28 ,  H01L21/283 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L29/54

CPC classification number: H01L21/76865 ,  H01L21/3105 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76858 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002

Abstract: A wiring layer of a semiconductor device having a novel contact structure is disclosed. The semiconductor device includes a semiconductor substrate, an insulating layer having an opening (contact hole or via), a reactive spacer formed on the sidewall of the opening or a reactive layer formed on the sidewall and on the bottom surface of the opening and a first conductive layer formed on the insulating layer which completely fills the opening. Since the reactive spacer or layer is formed on the sidewall of the opening, when the first conductive layer material is deposited, large islands will form to become large grains of the sputtered Al film. Also, providing the reactive spacer or layer improves the reflow of the first conductive layer during a heat-treating step for filling the opening at a high temperature below a melting temperature. Thus, complete filling of the opening with sputtered Al can be ensured. All the contact holes, being less than 1 .mu.m in size and having an aspect ratio greater than 1.0, can be completely filled with Al, to thereby enhance the reliability of the wiring of a semiconductor device.

Abstract translation: 公开了具有新型接触结构的半导体器件的布线层。 半导体器件包括半导体衬底，具有开口（接触孔或通孔）的绝缘层，形成在开口的侧壁上的反应性间隔物或形成在开口的侧壁和底表面上的反应层，第一 形成在绝缘层上的完全填充开口的导电层。 由于反应性间隔物或层形成在开口的侧壁上，所以当沉积第一导电层材料时，将形成大的岛形成溅射的Al膜的大颗粒。 此外，提供反应间隔物或层在用于在低于熔融温度的高温下填充开口的热处理步骤期间改善了第一导电层的回流。 因此，可以确保用溅射的Al完全填充开口。 尺寸小于1μm并且具有大于1.0的纵横比的所有接触孔可以完全填充Al，从而提高半导体器件的布线的可靠性。

公开(公告)号：US5569961A

公开(公告)日：1996-10-29

申请号：US473050

申请日：1995-06-07

Applicant: Sang-in Lee

Inventor： Sang-in Lee

IPC: H01L21/285 ,  H01L21/441 ,  H01L21/48 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522 ,  H01L23/532 ,  H01L29/41 ,  H01L29/43

CPC classification number: H01L21/76838 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  Y10S257/915

Abstract: The invention relates to a wiring structure for a semiconductor device and a method for manufacturing the same, which fills up a contact hole of below one half micron. An insulating layer is formed on a semiconductor substrate, and a contact hole is formed in the insulating layer. On the insulating layer, a first metal is deposited via a CVD method to form a CVD metal layer or a CVD metal plug filling up the contact hole. Then, the thus-obtained CVD metal layer or the CVD metal plus is heat-treated in a vacuum at a high temperature below the melting point of the first metal, thereby planarizing the surface of the CVD metal layer. A second metal is deposited via a sputtering method on the CVD metal layer or on the CVD metal plug to thereby form a sputtered metal layer. The contact hole is filled up with the first metal by the CVD method and then a reliable sputtered metal layer is deposited via a sputtering method. The wiring layer can be used for semiconductor devices of the next generation.

Abstract translation: 本发明涉及一种用于半导体器件的布线结构及其制造方法，其填充低于一半微米的接触孔。 在半导体衬底上形成绝缘层，并在绝缘层中形成接触孔。 在绝缘层上，通过CVD法沉积第一金属，以形成填充接触孔的CVD金属层或CVD金属塞。 然后，将如此获得的CVD金属层或CVD金属加热件在低于第一金属熔点的高温下在真空中进行热处理，由此使CVD金属层的表面平坦化。 通过溅射法在CVD金属层或CVD金属插塞上沉积第二种金属，从而形成溅射金属层。 通过CVD法将接触孔填充第一金属，然后通过溅射法沉积可靠的溅射金属层。 布线层可用于下一代的半导体器件。

公开(公告)号：US5534463A

公开(公告)日：1996-07-09

申请号：US8775

申请日：1993-01-25

Applicant: Sang-in Lee ,  Chang-soo Park

Inventor： Sang-in Lee ,  Chang-soo Park

IPC: H01L21/28 ,  H01L21/283 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44

CPC classification number: H01L21/76865 ,  H01L21/3105 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76858 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002

Abstract: A wiring layer of a semiconductor device having a novel contact structure is disclosed. The semiconductor device includes a semiconductor substrate, an insulating layer having an opening (contact hole or via), a reactive spacer formed on the sidewall of the opening or a reactive layer formed on the sidewall and on the bottom surface of the opening and a first conductive layer formed on the insulating layer which completely fills the opening. Since the reactive spacer or layer is formed on the sidewall of the opening, when the first conductive layer material is deposited, large islands will form to become large grains of the sputtered Al film. Also, providing the reactive spacer or layer improves the reflow of the first conductive layer during a heat-treating step for filling the opening at a high temperature below a melting temperature. Thus, complete filling of the opening with sputtered Al can be ensured. All the contact holes, being less than 1 .mu.m in size and having an aspect ratio greater than 1.0, can be completely filled with Al, to thereby enhance the reliability of the wiring of a semiconductor device.

Abstract translation: 公开了具有新型接触结构的半导体器件的布线层。 半导体器件包括半导体衬底，具有开口（接触孔或通孔）的绝缘层，形成在开口的侧壁上的反应性间隔物或形成在开口的侧壁和底表面上的反应层，第一 形成在绝缘层上的完全填充开口的导电层。 由于反应性间隔物或层形成在开口的侧壁上，所以当沉积第一导电层材料时，将形成大的岛形成溅射的Al膜的大颗粒。 此外，提供反应间隔物或层在用于在低于熔融温度的高温下填充开口的热处理步骤期间改善了第一导电层的回流。 因此，可以确保用溅射的Al完全填充开口。 尺寸小于1μm并且具有大于1.0的纵横比的所有接触孔可以完全填充Al，从而提高半导体器件的布线的可靠性。

公开(公告)号：USD746907S1

公开(公告)日：2016-01-05

申请号：US29456839

申请日：2013-06-04

Applicant: Min-Chul Kim ,  Seung-Wook Jeong ,  Sang-In Lee

Designer： Min-Chul Kim ,  Seung-Wook Jeong ,  Sang-In Lee

公开(公告)号：US08851012B2

公开(公告)日：2014-10-07

申请号：US12560690

申请日：2009-09-16

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: C23C16/00 ,  C23C16/455 ,  C23C16/54

CPC classification number: C23C16/50 ,  C23C16/45514 ,  C23C16/45595 ,  C23C16/54

Abstract: A vapor deposition reactor may include a first electrode including a first channel and at least one first injection hole connected to the first channel. a second electrode electrically separated from the first electrode, and a power source for applying power between the first electrode and the second electrode to generate plasma from a reactant gas between the first electrode and the second electrode. Also provided is a method for forming thin film using the vapor deposition reactor.

Abstract translation: 气相沉积反应器可以包括包括第一通道的第一电极和连接到第一通道的至少一个第一注入孔。 与第一电极电分离的第二电极和用于在第一电极和第二电极之间施加电力以从第一电极和第二电极之间的反应气体产生等离子体的电源。 还提供了使用蒸镀反应器形成薄膜的方法。

公开(公告)号：US08697198B2

公开(公告)日：2014-04-15

申请号：US13410545

申请日：2012-03-02

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: C23C16/50 ,  C23C16/455

CPC classification number: C23C16/50 ,  C23C16/45517 ,  C23C16/45544

Abstract: Embodiments relate to applying a magnetic field across the paths of injected polar precursor molecules to cause spiral movement of the precursor molecules relative to the surface of a substrate. When the polar precursor molecules arrive at the surface of the substrate, the polar precursor molecules make lateral movements on the surface due to their inertia. Such lateral movements of the polar precursor molecules increase the chance that the molecules would find and settle at sites (e.g., nucleation sites, broken bonds and stepped surface locations) or react on the surface of the substrate. Due to the increased chance of absorption or reaction of the polar precursor molecules, the injection time or injection iterations may be reduced.

Abstract translation: 实施例涉及在注入的极性前体分子的路径上施加磁场以引起前体分子相对于基底表面的螺旋运动。 当极性前体分子到达基底表面时，极性前体分子由于其惯性而在表面上产生横向运动。 极性前体分子的这种侧向运动增加了分子在位置（例如成核位点，断裂键和阶梯表面位置）处发现并沉降或在基底表面上反应的机会。 由于极性前体分子的吸收或反应的机会增加，所以可以减少注射时间或注射次数。

公开(公告)号：US08617652B2

公开(公告)日：2013-12-31

申请号：US13536646

申请日：2012-06-28

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: C23C16/30

CPC classification number: D06M11/77 ,  A01N59/16 ,  C23C16/045 ,  C23C16/45544 ,  C23C16/45555 ,  D06M11/45 ,  D06M11/83 ,  Y10T442/20 ,  Y10T442/2098 ,  Y10T442/2984 ,  A01N25/08 ,  A01N2300/00

Abstract: Embodiments relate to depositing on one or more layers of materials on a fiber or fiber containing material using atomic layer deposition (ALD) to provide or enhance functionalities of the fibers or fiber containing material. A layer of material is deposited coated on the fibers or fiber containing textile by causing the relative movement between a fiber or the fiber containing textile and a source injector. The surface of the material is oxidized, nitrified or carbonized to increase the volume of the deposited material. By increasing the volume of the material, the material is subject to compressive stress. The compressive stress renders the fibers or the fiber containing material more rigid, stronger and more resistant against bending force, impact or tensile force.

Abstract translation: 实施例涉及使用原子层沉积（ALD）在含纤维或含纤维材料的一层或多层材料上沉积以提供或增强纤维或含纤维材料的功能性。 通过引起纤维或含有纤维的织物和源注射器之间的相对运动，将一层材料沉积在纤维或含纤维织物上。 材料的表面被氧化，硝化或碳化，以增加沉积材料的体积。 通过增加材料的体积，材料承受压应力。 压缩应力使纤维或含纤维材料更加坚固，更坚固，更抗弯曲力，冲击力或拉力。

公开(公告)号：US08263502B2

公开(公告)日：2012-09-11

申请号：US12539289

申请日：2009-08-11

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/76224 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/0262 ,  H01L21/3141 ,  H01L21/31604

Abstract: A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.

Abstract translation: 通过在具有凹部的基板上形成第一材料层来制造基板结构，使用与第一材料反应的第二材料从基板的除了凹部的部分除去第一材料层，并从 所述第一材料层使用与所述第一材料反应的第三材料。 制造器件的方法可以包括形成衬底结构的方法。