公开(公告)号：US07319944B2

公开(公告)日：2008-01-15

申请号：US10760522

申请日：2004-01-21

申请人： Hiroko Nakamura ,  Shoji Mimotogi ,  Yasunobu Onishi

发明人： Hiroko Nakamura ,  Shoji Mimotogi ,  Yasunobu Onishi

IPC分类号： G06G7/48 ,  G06F17/50 ,  H01L21/00 ,  H01L21/66

CPC分类号： G03F7/30 ,  G03F1/36

摘要： A computer implemented method for development profile simulation in accordance with an embodiment of the present invention includes calculating optical intensities in a photosensitive resist, calculating a spatial average value of the optical intensities, reading a measured changing ratio of a dissolution rate of the photosensitive resist relating to an alkaline concentration changed by at least one of exposure dose on the photosensitive resist, a position in the thickness direction of the photosensitive resist and an alkaline concentration of developer for the photosensitive resist, obtaining a calculated dissolution rate by using the spatial average value and the measured changing ratio, and predicting a pattern shape of the photosensitive resist from the calculated dissolution rate.

摘要翻译： 根据本发明的实施例的用于开发剖面模拟的计算机实现方法包括计算光敏抗蚀剂中的光强度，计算光强度的空间平均值，读取测量的光敏抗蚀剂溶解速率的变化率 通过光敏抗蚀剂上的曝光剂量，感光性抗蚀剂的厚度方向上的位置和感光性抗蚀剂的显色剂的碱浓度中的至少一种而变化的碱性浓度，通过使用空间平均值求出计算出的溶解率， 测量的变化率，并根据计算的溶解速率预测光敏抗蚀剂的图案形状。

公开(公告)号：US07300884B2

公开(公告)日：2007-11-27

申请号：US11270621

申请日：2005-11-10

申请人： Yuriko Seino ,  Yasuhiko Sato ,  Yasunobu Onishi

发明人： Yuriko Seino ,  Yasuhiko Sato ,  Yasunobu Onishi

IPC分类号： H01L21/302

CPC分类号： H01L21/31144 ,  H01L21/0332 ,  H01L21/0337

摘要： According to an aspect of the invention, there is provided a pattern forming method comprising forming an underlayer film on a film to be worked which has been formed on a semiconductor substrate, subjecting the underlayer film to an oxidizing treatment, forming an intermediate film which becomes a mask of the underlayer film, forming a resist film on the intermediate film, exposing the resist film to light to form a resist pattern, transferring the resist pattern onto the intermediate film to form an intermediate film pattern, and transferring the intermediate film pattern onto the underlayer film to form an underlayer film pattern.

摘要翻译： 根据本发明的一个方面，提供一种图案形成方法，包括在半导体衬底上形成的被加工膜上形成下层膜，对下层膜进行氧化处理，形成中间膜， 下层膜的掩模，在中间膜上形成抗蚀剂膜，将抗蚀剂膜曝光以形成抗蚀剂图案，将抗蚀剂图案转印到中间膜上以形成中间膜图案，并将中间膜图案转印到 下层膜形成下层膜图案。

公开(公告)号：US20060194449A1

公开(公告)日：2006-08-31

申请号：US11350127

申请日：2006-02-09

申请人： Tomoyuki Takeishi ,  Shinichi Ito ,  Yasunobu Onishi ,  Tsuyoshi Shibata

发明人： Tomoyuki Takeishi ,  Shinichi Ito ,  Yasunobu Onishi ,  Tsuyoshi Shibata

IPC分类号： H01L21/31

CPC分类号： G03F7/38 ,  G03F7/0045 ,  H01L21/0276

摘要： A resist pattern forming method includes forming a chemically amplified resist film on a substrate, forming a latent image in the resist film by irradiating an energy ray, contacting a liquid to a surface of the resist film, increasing temperature of the resist film to first temperature after the forming the latent image and the contacting, the first temperature being lower than a reaction start temperature at which an acid catalysis reaction occurs in the resist film, maintaining the temperature of the resist film at the first temperature for a predetermined time, increasing the temperature of the resist film to second temperature being not lower than the reaction start temperature after a lapse of the predetermined time, decreasing the temperature of the resist film increased to the second temperature to a temperature lower than the reaction start temperature, and developing the resist film after the decreasing the temperature.

摘要翻译： 抗蚀剂图形形成方法包括在基板上形成化学放大型抗蚀剂膜，通过照射能量射线在液体中形成潜像，使其与抗蚀剂膜的表面接触，使抗蚀剂膜的温度升高到第一温度 在形成潜像和接触之后，第一温度低于在抗蚀剂膜中发生酸催化反应的反应开始温度，将抗蚀剂膜的温度保持在第一温度预定时间，增加 抗蚀剂膜的温度与第二温度不低于经过规定时间后的反应开始温度，将抗蚀剂膜的温度降低到第二温度至比反应开始温度低的温度，并使抗蚀剂显影 电影降温后。

公开(公告)号：US20060127815A1

公开(公告)日：2006-06-15

申请号：US11296480

申请日：2005-12-08

申请人： Yasuhiko Sato ,  Yasunobu Onishi

发明人： Yasuhiko Sato ,  Yasunobu Onishi

IPC分类号： G03F7/00

CPC分类号： G03F7/094 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/093 ,  G03F7/11 ,  G03F7/115

摘要： According to an aspect of the invention, there is provided a pattern forming method comprising forming a first resist film on a film to be worked formed on a semiconductor substrate, forming a second resist film on the first resist film, forming a resist pattern from the second resist film, forming an overcoat film containing a metal element or a semi-conducting element on the resist pattern, insolubilizing, in a predetermined solvent, a portion of the overcoat film at a predetermined distance from an interface between the overcoat film and the resist pattern, removing, with the solvent, a portion of the overcoat film soluble in the solvent to form an overcoat film pattern, transferring the overcoat film pattern to the first resist film to form a lower-layer resist film pattern, and transferring the lower-layer resist film pattern to the film to be worked to form a pattern on the film.

摘要翻译： 根据本发明的一个方面，提供了一种图案形成方法，包括在半导体衬底上形成的待加工膜上形成第一抗蚀剂膜，在第一抗蚀剂膜上形成第二抗蚀剂膜，从第一抗蚀剂图案形成抗蚀剂图案 在抗蚀剂图案上形成含有金属元素或半导体元件的外涂膜，在规定的溶剂中不溶解从外涂膜与抗蚀剂之间的界面预定距离的一部分覆盖膜 用溶剂除去一部分可溶于溶剂的外涂膜形成外涂膜图案，将覆盖膜图案转印到第一抗蚀剂膜上以形成下层抗蚀剂膜图案， 层抗蚀剂膜图案到待加工的膜以在膜上形成图案。

公开(公告)号：US20050214695A1

公开(公告)日：2005-09-29

申请号：US11081579

申请日：2005-03-17

申请人： Hirokazu Kato ,  Yasunobu Onishi ,  Daisuke Kawamura

发明人： Hirokazu Kato ,  Yasunobu Onishi ,  Daisuke Kawamura

IPC分类号： G03F7/40 ,  B05D1/38 ,  G03F7/00 ,  G03F7/20 ,  G03F7/30 ,  H01L21/027 ,  H01L21/033

CPC分类号： H01L21/0337 ,  H01L21/0275

摘要： A pattern forming method which can suppress pattern collapse of a resist pattern comprises after developing a resist pattern formed from a resist film on a substrate, supplying a rinse agent onto the substrate to replace a developer on the substrate with the rinse agent, supplying an coating film material onto the substrate to replace at least a part of the rinse agent with the coating film material, wherein the coating film material contains a solvent and a solute different from the resist film, volatilizing the solvent in the coating film material to form an coating film covering the resist film on the substrate, removing at least a part of a surface of the coating film to expose at least a part of an upper surface of the resist pattern and form a mask pattern comprising the coating film, and processing the substrate using the mask pattern.

摘要翻译： 可以抑制抗蚀剂图案的图案塌陷的图案形成方法包括在从基板上的抗蚀剂膜形成的抗蚀剂图案显影之后，将冲洗剂供应到基板上以用冲洗剂代替基板上的显影剂， 将薄膜材料涂覆在基材上以用涂膜材料代替至少一部分漂洗剂，其中涂膜材料含有溶剂和不同于抗蚀剂膜的溶质，挥发涂膜材料中的溶剂以形成涂层 膜，覆盖基板上的抗蚀剂膜，去除涂膜的表面的至少一部分以暴露抗蚀剂图案的上表面的至少一部分，并形成包含涂膜的掩模图案，并使用 掩模图案。

公开(公告)号：US06576562B2

公开(公告)日：2003-06-10

申请号：US10014459

申请日：2001-12-14

申请人： Junko Ohuchi ,  Yasuhiko Sato ,  Eishi Shiobara ,  Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Yasunobu Onishi

发明人： Junko Ohuchi ,  Yasuhiko Sato ,  Eishi Shiobara ,  Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Yasunobu Onishi

IPC分类号： H01L21302

CPC分类号： H01L21/76808 ,  H01L21/0271 ,  H01L21/288 ,  H01L21/31144 ,  H01L21/32051

摘要： A manufacturing method of semiconductor device comprises forming a mask material having an aromatic ring and carbon content of 80 wt % or more on an object, forming a mask material pattern by etching the mask material to a desired pattern, and etching the object to transfer the mask material pattern as a mask to the object.

公开(公告)号：US06420271B2

公开(公告)日：2002-07-16

申请号：US09814839

申请日：2001-03-23

申请人： Yasuhiko Sato ,  Eishi Shiobara ,  Motoyuki Sato ,  Yasunobu Onishi ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Junko Ohuchi ,  Hisataka Hayashi

发明人： Yasuhiko Sato ,  Eishi Shiobara ,  Motoyuki Sato ,  Yasunobu Onishi ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Junko Ohuchi ,  Hisataka Hayashi

IPC分类号： H01L214763

CPC分类号： H01L21/31144 ,  G03F7/085 ,  G03F7/09 ,  H01L21/3081 ,  H01L21/32139

摘要： A method of forming a pattern comprising the steps of, forming a lower film on a substrate, the lower film being a film containing carbon atom at a ratio of 80 wt % or more, or a vapor phase deposition film, either applying an adhesion-promoting treatment to a surface of the lower film or forming an adhesion-promoting on the lower film, forming an intermediate film on a surface of the lower film, forming a resist film on the intermediate film, forming a resist pattern by conducting a patterning exposure of the resist film, forming an intermediate film pattern by transferring the resist pattern to the intermediate film, and forming a lower film pattern by transferring the intermediate film pattern to the lower film.

摘要翻译： 一种形成图案的方法，包括以下步骤：在基底上形成下膜，下膜是含有80重量％以上的碳原子的膜或气相沉积膜， 促进对下膜的表面的处理或在下膜上形成粘合促进，在下膜的表面上形成中间膜，在中间膜上形成抗蚀剂膜，通过进行图案曝光形成抗蚀剂图案 的抗蚀剂膜，通过将抗蚀剂图案转印到中间膜而形成中间膜图案，并通过将中间膜图案转印到下膜来形成下膜图案。

公开(公告)号：US5580702A

公开(公告)日：1996-12-03

申请号：US357179

申请日：1994-12-13

申请人： Rumiko Hayase ,  Yasunobu Onishi ,  Hirokazu Niki ,  Noahiko Oyasato ,  Yoshihito Kobayashi ,  Shuzi Nayase

发明人： Rumiko Hayase ,  Yasunobu Onishi ,  Hirokazu Niki ,  Noahiko Oyasato ,  Yoshihito Kobayashi ,  Shuzi Nayase

IPC分类号： G03F7/023 ,  G03F7/039 ,  G03F7/30

CPC分类号： G03F7/0233 ,  G03F7/0392 ,  Y10S430/111 ,  Y10S430/146

摘要： Disclosed herein is a resist for forming patterns, which is greatly sensitive to ultraviolet rays an ionizing radiation, and which can therefore form a high-resolution resist pattern if exposed to ultra violet rays or an unionizing radiation. Hence, the resist is useful in a method of manufacturing semicon ductor devices having high integration densities. The resist comprises tert-butoxycarbonyl methoxypolyhydroxy styrene and an o-quinonediazide compound.

摘要翻译： 本文公开了用于形成图案的抗蚀剂，其对于紫外线对电离辐射非常敏感，并且因此如果暴露于紫外线或组合辐射则可形成高分辨率抗蚀剂图案。 因此，抗蚀剂可用于制造具有高积分密度的半导体器件的方法。 抗蚀剂包括叔丁氧基羰基甲氧基聚羟基苯乙烯和邻醌二叠氮化合物。

公开(公告)号：US5403695A

公开(公告)日：1995-04-04

申请号：US876457

申请日：1992-04-30

申请人： Rumiko Hayase ,  Yasunobu Onishi ,  Hirokazu Niki ,  Naohiko Oyasato ,  Yoshihito Kobayashi ,  Shuzi Hayase

发明人： Rumiko Hayase ,  Yasunobu Onishi ,  Hirokazu Niki ,  Naohiko Oyasato ,  Yoshihito Kobayashi ,  Shuzi Hayase

IPC分类号： G03F7/023 ,  G03F7/039 ,  G03F7/30

CPC分类号： G03F7/0233 ,  G03F7/0392 ,  Y10S430/111 ,  Y10S430/146

摘要： Disclosed herein is a resist for forming patterns, which is greatly sensitive to ultraviolet rays an ionizing radiation, and which can therefore form a high-resolution resist pattern if exposed to ultra violet rays or an unionizing radiation. Hence, the resist is useful in a method of manufacturing semicon ductor devices having high integration densities. The resist comprises tert-butoxycarbonyl methoxypolyhydroxy styrene and an o-quinonediazide compound.

摘要翻译： 本文公开了用于形成图案的抗蚀剂，其对于紫外线对电离辐射非常敏感，并且因此如果暴露于紫外线或组合辐射则可形成高分辨率抗蚀剂图案。 因此，抗蚀剂可用于制造具有高积分密度的半导体器件的方法。 抗蚀剂包括叔丁氧基羰基甲氧基聚羟基苯乙烯和邻醌二叠氮化合物。

公开(公告)号：US5279921A

公开(公告)日：1994-01-18

申请号：US799320

申请日：1991-11-27

申请人： Yasunobu Onishi ,  Yoshihito Kobayashi ,  Hirokazu Niki

发明人： Yasunobu Onishi ,  Yoshihito Kobayashi ,  Hirokazu Niki

IPC分类号： C08K5/41 ,  C08K5/42 ,  C08L101/00 ,  G03F7/004 ,  G03F7/039 ,  G03F7/075 ,  H01L21/027 ,  G03C1/73

CPC分类号： G03F7/0045 ,  Y10S430/122 ,  Y10S430/124

摘要： Disclosed is a pattern formation resist which can be exposed with deep UV, has a high dry etching resistance, has a large allowance in a development manipulation using an aqueous alkali solution, and can form a fine pattern having a good sectional shape. The resist comprises an alkali-soluble polymer and a compound represented by the following formula (I) and simultaneously containing, in a single molecule, a substituent which decomposes with an acid and a group which produces an acid with deep UV: ##STR1## wherein the substituent which decomposes with an acid is present in at least one of R.sub.1 to R.sub.4, and when R.sub.1 to R.sub.4 have a group except for the substituent which decomposes with an acid, R.sub.1 represents a nonsubstituted or substituted aliphatic hydrocarbon group, each of R.sub.2 and R.sub.3 independently represents a hydrogen atom or a non-substituted or substituted aliphatic hydrocarbon group, and R.sub.4 represents a nonsubstituted or substituted aliphatic hydrocarbon group.

摘要翻译： 公开了一种图案形成抗蚀剂，其可以用深紫外线曝光，具有高的耐干蚀刻性，在使用碱性水溶液的显影操作中具有大的余量，并且可以形成具有良好截面形状的精细图案。 抗蚀剂包含碱溶性聚合物和由下式（I）表示的化合物，并且在单分子中同时含有与酸分解的取代基和产生具有深UV的酸的基团：（*化学结构 *）（I）其中与酸分解的取代基存在于R 1至R 4中的至少一个中，并且当R 1至R 4具有除了与酸分解的取代基之外的基团时，R 1表示非取代或取代的脂族烃 基团，R2和R3各自独立地表示氢原子或未取代或取代的脂族烃基，R4表示非取代或取代的脂族烃基。