公开(公告)号：US08447460B2

公开(公告)日：2013-05-21

申请号：US12738301

申请日：2008-11-04

申请人： Toshihisa Nihei ,  Yasushi Kobayashi

发明人： Toshihisa Nihei ,  Yasushi Kobayashi

IPC分类号： G01M17/00

CPC分类号： G06F17/00 ,  B60K23/0808 ,  B60K2350/962 ,  B60W10/06 ,  B60W10/11 ,  B60W10/14 ,  B60W10/184 ,  B60W30/18009 ,  B60W50/082 ,  B60W50/14 ,  F16H59/08 ,  F16H63/42 ,  F16H2059/0221 ,  F16H2059/082 ,  F16H2063/426

摘要： A control state of the vehicle is switched upon operation of a control switch. Besides, a mode of travel for a travel of a vehicle is selected by operation of a travel mode selection portion. Then, it is determined whether the recommended control state recommended for the selected mode of travel and the actual control state are the same. If it is determined that they are not the same, that is, that there is a deviation between the recommended control state and the actual control state, an operation method for a control switch for realizing the control state recommended for the selected mode of travel is presented to a driver.

公开(公告)号：US20130083641A1

公开(公告)日：2013-04-04

申请号：US13609484

申请日：2012-09-11

申请人： Yasushi KOBAYASHI ,  Yohichi SAITOH ,  Kazuo MOMOO

发明人： Yasushi KOBAYASHI ,  Yohichi SAITOH ,  Kazuo MOMOO

IPC分类号： G11B7/09 ,  G11B7/127 ,  G11B7/1374 ,  G11B7/1353

CPC分类号： G11B7/00458 ,  G11B7/0901 ,  G11B7/0912 ,  G11B7/0916 ,  G11B7/1353 ,  G11B7/1381

摘要： In one embodiment, the optical pickup device includes: a light source that emits a light beam; a diffractive element that diffracts the light beam and generates a zero-order and ±first-order diffracted light beams; an objective lens that converges the diffracted light beams onto the same track on the storage medium; and a photodetector that receives the diffracted light beams reflected from the storage medium. If a distance from a light beam spot left by the zero-order diffracted light beam on the track to light beam spots left by the ±first-order diffracted light beams on that track is d [μm], the scanning linear velocity of the storage medium is v [m/s], and a time it takes for a phase-change material of the storage medium that has once been melted by the zero-order diffracted light beam to solidify is T [μs], vT≦d is satisfied.

摘要翻译： 在一个实施例中，光学拾取装置包括：发射光束的光源; 衍射元件，衍射光束并产生零级和±一级衍射光束; 将衍射光束会聚在存储介质上的同一轨道上的物镜; 以及光接收器，其接收从存储介质反射的衍射光束。 如果从轨道上的零级衍射光束留下的光束点与该磁道上的±一级衍射光束留下的光束点的距离为d [μm]，则存储器的扫描线速度 介质是v [m / s]，并且一旦被零级衍射光束熔化的存储介质的相变材料固化所花费的时间是T [μs]，vT＆nlE; d满足 。

公开(公告)号：US20110246541A1

公开(公告)日：2011-10-06

申请号：US12894725

申请日：2010-09-30

申请人： Kazuyuki SAKAI ,  Yasushi KOBAYASHI ,  Yuuki TADA ,  Tomoyuki KOBAYASHI

发明人： Kazuyuki SAKAI ,  Yasushi KOBAYASHI ,  Yuuki TADA ,  Tomoyuki KOBAYASHI

IPC分类号： G06F17/30

CPC分类号： H04L43/0817 ,  G06F11/3476 ,  G06F11/3495 ,  H04L41/0213 ,  H04L43/12 ,  H04L67/125

摘要： The present invention, an apparatus includes a data management apparatus comprising, a determination unit configured to determine whether an analyzing apparatus is in a communicable state when a configuration information data indicating a status of a server apparatus is received from a data collection apparatus, the data analyzing apparatus analyzing the configuration information data, an unprocessed information storage unit configured to store the received configuration information data once it is determined that data analyzing apparatus is in an incommunicable state, an integrating unit configured to integrate a plurality of configuration information data stored in the storage unit in accordance with a predetermined condition; and a notifying unit configured to send, to the analyzing apparatus, a message indicating that the data management apparatus is storing the configuration information data integrated by the integrating unit once it is determined that the data analyzing apparatus is in a communicable state.

摘要翻译： 本发明是一种数据管理装置，包括：确定单元，被配置为当从数据收集装置接收到指示服务器装置的状态的配置信息数据时，判断分析装置是否处于通信状态，所述数据 分析装置分析配置信息数据，未处理信息存储单元，被配置为一旦确定数据分析装置处于不可通信状态，就存储接收到的配置信息数据;整合单元，被配置为将存储在所述配置信息数据中的多个配置信息数据 存储单元; 以及通知单元，被配置为一旦确定数据分析装置处于可通信状态，则向分析装置发送指示数据管理装置正在存储由积分单元集成的配置信息数据的消息。

公开(公告)号：US20110068471A1

公开(公告)日：2011-03-24

申请号：US12955525

申请日：2010-11-29

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Yuichi Minoura

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Yuichi Minoura

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53238 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L23/485 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The method of manufacturing a semiconductor device includes forming an insulating film of a silicon compound-group insulation film; forming an opening in the insulation film, applying an active energy beam in an atmosphere containing hydrocarbon gas to form a barrier layer of a crystalline SiC, and forming an interconnection structure of copper in the opening with the barrier layer formed in.

摘要翻译： 制造半导体器件的方法包括：形成硅化合物基绝缘膜的绝缘膜; 在绝缘膜上形成开口，在含有烃气体的气氛中施加活性能量束，形成结晶SiC的阻挡层，并在形成有阻挡层的开口中形成铜的互连结构。

公开(公告)号：US07875981B2

公开(公告)日：2011-01-25

申请号：US12037439

申请日：2008-02-26

申请人： Yasushi Kobayashi ,  Yoshihiro Nakata ,  Shirou Ozaki

发明人： Yasushi Kobayashi ,  Yoshihiro Nakata ,  Shirou Ozaki

IPC分类号： H01L23/485

CPC分类号： H01L21/31695 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76834 ,  H01L2924/0002 ,  C08L2666/54 ,  H01L2924/00

摘要： To provide an insulating film material that can be advantageously used for forming an insulating film having a low dielectric constant and excellent resistance to damage, such as etching resistance and resistance to liquid reagents, a multilayer interconnection structure in which a parasitic capacitance between the interconnections can be reduced, efficient methods for manufacturing the multilayer interconnection structure, and an efficient method for manufacturing a semiconductor device with a high speed and reliability. The insulating film material contains at least a silicon compound having a steric structure represented by Structural Formula (1) below. where, R1, R2, R3, and R4 may be the same or different and at least one of them represents a functional group containing any of a hydrocarbon and an unsaturated hydrocarbon.

摘要翻译： 为了提供一种绝缘膜材料，其可以有利地用于形成具有低介电常数和优异的耐腐蚀性（如抗蚀刻性和耐液体试剂）的绝缘膜，其中互连之间的寄生电容可以 减少用于制造多层互连结构的有效方法，以及用于制造具有高速度和可靠性的半导体器件的有效方法。 绝缘膜材料至少含有具有由下述结构式（1）表示的空间结构的硅化合物。 其中，R 1，R 2，R 3和R 4可以相同或不同，并且它们中的至少一个表示含有任何烃和不饱和烃的官能团。

公开(公告)号：US20100302784A1

公开(公告)日：2010-12-02

申请号：US12789032

申请日：2010-05-27

申请人： Masatoshi YAJIMA ,  Tomoaki TOJO ,  Yasushi KOBAYASHI

发明人： Masatoshi YAJIMA ,  Tomoaki TOJO ,  Yasushi KOBAYASHI

IPC分类号： F21V5/00

CPC分类号： G11B7/22 ,  G11B7/1374 ,  G11B7/1392 ,  G11B2007/0006

摘要： The present invention provides an optical device including: a light source; an optical element to be irradiated with light emitted from the light source; and a supporting member for supporting the optical element through a cured product of an adhesive. This cured product of the adhesive contains a thermoplastic elastic material. The present invention also provides an optical device including: a light source; an optical element to be irradiated with light emitted from the light source; and a supporting member for supporting the optical element through a cured product of an adhesive. This cured product of the adhesive has a Young's modulus of at least 1.0E+5 Pa but less than 1.0E+7 Pa in an exponential expression, in a temperature range that the cured product of the adhesive reaches due to heat generation during operation.

摘要翻译： 本发明提供一种光学装置，包括：光源; 要从光源发射的光照射的光学元件; 以及用于通过粘合剂的固化产物来支撑光学元件的支撑构件。 该粘合剂的固化产物含有热塑性弹性材料。 本发明还提供了一种光学装置，包括：光源; 要从光源发射的光照射的光学元件; 以及用于通过粘合剂的固化产物来支撑光学元件的支撑构件。 在粘合剂的固化产物在操作期间由于发热引起的粘合剂的固化产物达到的温度范围内，粘合剂的固化产物的指数表达式的杨氏模量为至少1.0E + 5Pa但小于1.0E + 7Pa。

公开(公告)号：US20100140807A1

公开(公告)日：2010-06-10

申请号：US12648804

申请日：2009-12-29

申请人： Yasushi Kobayashi ,  Yoshihiro Nakata ,  Shirou Ozaki

发明人： Yasushi Kobayashi ,  Yoshihiro Nakata ,  Shirou Ozaki

IPC分类号： H01L23/48 ,  H05K1/03 ,  C23F1/00 ,  H01L21/50 ,  C07F7/10

CPC分类号： H01L21/3121 ,  C08G77/60 ,  C09D183/16 ,  H01B3/46 ,  H01L21/02123 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/4857 ,  H01L21/76807 ,  H01L21/76829 ,  H01L24/02 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/02319 ,  H01L2224/02333 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/13111 ,  H01L2224/94 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H05K3/4676 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/00

摘要： An insulating film material, which contains a polycarbosilane compound expressed by the following structural formula 1; where R1 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon; R2 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon; n is an integer of 5 to 5,000.

摘要翻译： 一种绝缘膜材料，其含有由以下结构式1表示的聚碳硅烷化合物; 其中R1可以在重复“n”次的单位中彼此相同或不同，并且各自表示C1-4烃或芳香烃; R2可以在重复“n”次的单位中彼此相同或不同，并且各自表示C1-4烃或芳族烃; n为5〜5000的整数。

公开(公告)号：US20100123194A1

公开(公告)日：2010-05-20

申请号：US12613150

申请日：2009-11-05

申请人： Kohei MIYAGAWA ,  Yasushi Kobayashi ,  Daigo Yamashina

发明人： Kohei MIYAGAWA ,  Yasushi Kobayashi ,  Daigo Yamashina

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7816 ,  H01L29/0878 ,  H01L29/66689

摘要： In a semiconductor substrate of a first conductivity type, first to third drain offset regions of a second conductivity type are formed in that order in a bottom up manner. A body region of the first conductivity type is formed partly in the second drain offset region and partly in the third drain offset region. The second drain offset region has a lower impurity concentration than the first and third drain offset regions. A curvature portion of the body region is located in the second drain offset region.

摘要翻译： 在第一导电类型的半导体衬底中，以自下而上的顺序形成第二导电类型的第一至第三漏极偏移区域。 第一导电类型的主体区域部分地形成在第二漏极偏移区域中，部分地形成在第三漏极偏移区域中。 第二漏极偏移区域具有比第一和第三漏极偏移区域更低的杂质浓度。 身体区域的曲率部分位于第二漏极偏移区域中。

公开(公告)号：US20090184572A1

公开(公告)日：2009-07-23

申请号：US12375546

申请日：2007-11-28

申请人： Yoshihisa Yamada ,  Yasushi Kobayashi ,  Tatsushi Takasu ,  Kota Shimoga

发明人： Yoshihisa Yamada ,  Yasushi Kobayashi ,  Tatsushi Takasu ,  Kota Shimoga

IPC分类号： B60T8/1755

CPC分类号： B60T8/1755 ,  B60T2201/14

摘要： A brake control device that controls braking forces applied to wheels to stabilize the behavior of a vehicle turning a corner, and includes a turning condition detection unit detecting a turning condition of the vehicle; a braking amount setting unit setting braking amounts for the respective wheels based on the turning condition detected by the turning condition detection unit; a brake control unit applying braking forces to the wheels according to the braking amounts set by the braking amount setting unit; and a road surface friction coefficient estimation unit estimating a road surface friction coefficient of the road on which the vehicle is running. The braking amount setting unit changes upper limits of the braking amounts for the respective wheels according to the road surface friction coefficient when the vehicle is in a center differential lock mode or a direct four-wheel drive mode.

摘要翻译： 一种制动控制装置，其控制施加于车轮的制动力，以稳定车辆转弯的行为，并且包括检测车辆的转弯状态的转弯状态检测部; 制动量设定单元，基于由所述转弯条件检测单元检测到的转弯状态来设定各个车轮的制动量; 制动控制单元，根据由制动量设定单元设定的制动量向车轮施加制动力; 以及估计车辆行驶的道路的路面摩擦系数的路面摩擦系数估计单元。 制动量设定单元根据车辆处于中央差速锁定模式或直接四轮驱动模式时的路面摩擦系数来改变各车轮的制动量的上限。

公开(公告)号：US20090061633A1

公开(公告)日：2009-03-05

申请号：US12199297

申请日：2008-08-27

申请人： Yoshihiro NAKATA ,  Tadahiro IMADA ,  Shirou OZAKI ,  Yasushi KOBAYASHI ,  Kohta YOSHIKAWA ,  Ei YANO

发明人： Yoshihiro NAKATA ,  Tadahiro IMADA ,  Shirou OZAKI ,  Yasushi KOBAYASHI ,  Kohta YOSHIKAWA ,  Ei YANO

IPC分类号： H01L21/311

CPC分类号： H01L21/3105 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76883

摘要： According to an aspect of an embodiment, a method of manufacturing a semiconductor device has forming an insulating layer comprising silica-based insulating material, processing the insulating layer, hydrophobizing the insulating layer by applying a silane compound to act on the insulating layer; and irradiating the insulating layer with light or an electron beam.

摘要翻译： 根据实施例的一个方面，制造半导体器件的方法具有：形成包含二氧化硅基绝缘材料的绝缘层，加工绝缘层，通过施加硅烷化合物作用在绝缘层上使绝缘层疏水化; 并用光或电子束照射绝缘层。