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    Light emitting diode and method of fabricating the same
    23.
    发明授权
    Light emitting diode and method of fabricating the same 有权
    发光二极管及其制造方法

    公开(公告)号：US08628983B2

    公开(公告)日：2014-01-14

    申请号：US13368122

    申请日：2012-02-07

    申请人： Won Cheol Seo ,  Chang Youn Kim ,  Yeo Jin Yoon

    发明人： Won Cheol Seo ,  Chang Youn Kim ,  Yeo Jin Yoon

    IPC分类号： H01L21/00

    CPC分类号： H01L33/0079 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/46 ,  H01L33/641 ,  H01L2224/49107

    摘要： Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.

    摘要翻译： 这里公开了一种发光二极管。 发光二极管包括支撑衬底，形成在支撑衬底上的半导体层以及位于支撑衬底和下半导体层之间的金属图案。 半导体层包括第一导电类型的上半导体层，有源层和第二导电类型的下半导体层。 半导体层在牺牲衬底上生长，并且支撑衬底与牺牲衬底是均匀的。

    Light emitting device and method of manufacturing the same
    24.
    发明授权
    Light emitting device and method of manufacturing the same 有权
    发光元件及其制造方法

    公开(公告)号：US08476648B2

    公开(公告)日：2013-07-02

    申请号：US11993965

    申请日：2006-06-22

    申请人： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

    发明人： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

    IPC分类号： H01L33/00

    CPC分类号： H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

    摘要： The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.

    摘要翻译： 本发明涉及一种发光器件及其制造方法。 根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面 或P型半导体层的水平面为20〜80°的斜率。 此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转 芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括P型半导体 发光单元的层与水平面的倾斜度为20〜80°。 此外，本发明提供一种制造发光器件的方法。 因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。

    Light emitting diode having electrode pads
    25.
    发明授权
    Light emitting diode having electrode pads 有权
    具有电极焊盘的发光二极管

    公开(公告)号：US08309971B2

    公开(公告)日：2012-11-13

    申请号：US12974917

    申请日：2010-12-21

    申请人： Won Cheol Seo ,  Dae Sung Kal ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

    发明人： Won Cheol Seo ,  Dae Sung Kal ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

    IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

    CPC分类号： H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

    摘要翻译： 本发明的示例性实施例涉及包括基板，布置在基板上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极之间的绝缘层 垫，以及电连接到第二电极焊盘的至少一个上延伸部，所述至少一个上延伸部电连接到第二导电型半导体层。

    Light emitting device with light emitting cells arrayed
    26.
    发明授权
    Light emitting device with light emitting cells arrayed 有权
    具有排列发光单元的发光装置

    公开(公告)号：US08294386B2

    公开(公告)日：2012-10-23

    申请号：US13243802

    申请日：2011-09-23

    申请人： Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Lacroix Yves

    发明人： Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Lacroix Yves

    IPC分类号： H05B37/22

    CPC分类号： H05B33/0821 ,  H01L24/37 ,  H01L24/40 ,  H01L27/156 ,  H01L33/62 ,  H01L2224/371 ,  H01L2224/40137 ,  H01L2924/00014 ,  H01L2924/12041 ,  H05B33/0803 ,  H05B33/0809 ,  Y02B20/348 ,  H01L2924/00 ,  H01L2224/37099 ,  H01L2224/84

    摘要： The present invention relates to a light emitting device. The light emitting device according to the present invention comprises a light emitting cell block having a plurality of light emitting cells; and a bridge rectifying circuit connected to input and output terminals of the light emitting cell block, wherein the bridge rectifying circuit includes a plurality of diodes between nodes. In manufacturing an AC light emitting device with a bridge rectifying circuit built therein, the present invention can provide a light emitting device capable of enhancing the reliability and luminance of the light emitting device by setting the size of diodes of the bridge rectifying circuit to be a certain size and controlling the number thereof.

    摘要翻译： 本发明涉及一种发光装置。 根据本发明的发光器件包括具有多个发光单元的发光单元块; 以及连接到所述发光单元块的输入和输出端子的桥式整流电路，其中所述桥式整流电路在节点之间包括多个二极管。 在制造其中内置有桥式整流电路的交流发光装置的情况下，本发明可以提供一种通过将桥式整流电路的二极管的尺寸设定为一个可以提高发光装置的可靠性和亮度的发光装置 一定的尺寸并控制其数量。

    LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF
    27.
    发明申请
    LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF 有权
    发光装置及其制造方法

    公开(公告)号：US20120241787A1

    公开(公告)日：2012-09-27

    申请号：US13235063

    申请日：2011-09-16

    申请人： Yeo Jin YOON ,  Chang Yeon KIM

    发明人： Yeo Jin YOON ,  Chang Yeon KIM

    IPC分类号： H01L33/22 ,  H01L33/60 ,  H01L33/38 ,  H01L21/28

    CPC分类号： H01L33/60 ,  H01L21/28 ,  H01L21/306 ,  H01L33/0079 ,  H01L33/22

    摘要： A method of fabricating a vertical light emitting diode including: growing a low doped first semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first semiconductor; forming an AAO layer having a large number of holes formed therein by anodizing the aluminum layer; etching and patterning the low doped first semiconductor layer using the aluminum layer as a shadow mask, thereby forming grooves; removing the aluminum layer remaining; sequentially forming a high doped first semiconductor layer, an active layer and a second semiconductor layer on the low doped first semiconductor layer with the grooves; forming a metal reflective layer and a conductive substrate on the second semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first semiconductor layer, the electrode pad filled in the grooves and in ohmic contact with the high doped first semiconductor.

    摘要翻译： 一种制造垂直发光二极管的方法，包括：在牺牲衬底上生长低掺杂的第一半导体层; 在所述低掺杂的第一半导体上形成铝层; 通过阳极氧化铝层形成其中形成有大量孔的AAO层; 使用铝层作为荫罩来蚀刻和图案化低掺杂的第一半导体层，从而形成凹槽; 去除剩余的铝层; 在所述低掺杂的第一半导体层上顺序地形成具有沟槽的高掺杂的第一半导体层，有源层和第二半导体层; 在所述第二半导体层上形成金属反射层和导电基板; 分离牺牲衬底; 以及在所述低掺杂的第一半导体层的另一个表面上形成电极焊盘，所述电极焊盘填充在所述沟槽中并与所述高掺杂的第一半导体欧姆接触。

    Light emitting device and method of manufacturing the same
    28.
    发明授权
    Light emitting device and method of manufacturing the same 有权
    发光元件及其制造方法

    公开(公告)号：US08247244B2

    公开(公告)日：2012-08-21

    申请号：US12882449

    申请日：2010-09-15

    申请人： Chang Yeon Kim ,  Yeo Jin Yoon

    发明人： Chang Yeon Kim ,  Yeo Jin Yoon

    IPC分类号： H01L21/00

    CPC分类号： H01L33/24 ,  H01L33/14

    摘要： There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.

    摘要翻译： 提供了一种发光器件及其制造方法。 根据本发明的发光器件包括：衬底; 依次形成在基板上的N型半导体层，有源层和P型半导体层; 通过部分去除至少P型半导体和有源层而形成一个或多个沟槽以暴露N型半导体层; 形成在所述沟槽的侧壁上的第一绝缘层; 以及填充在其中形成有第一绝缘层的沟槽中的导电层。 根据本发明，可以获得均匀的电流扩散的特性，从而均匀地发光，从而提高发光效率。

    LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
    29.
    发明申请
    LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 有权
    发光二极管及其制造方法

    公开(公告)号：US20120135551A1

    公开(公告)日：2012-05-31

    申请号：US13368122

    申请日：2012-02-07

    申请人： Won Cheol SEO ,  Chang Youn KIM ,  Yeo Jin YOON

    发明人： Won Cheol SEO ,  Chang Youn KIM ,  Yeo Jin YOON

    IPC分类号： H01L33/62 ,  H01L33/60

    CPC分类号： H01L33/0079 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/46 ,  H01L33/641 ,  H01L2224/49107

    摘要： Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.

    摘要翻译： 这里公开了一种发光二极管。 发光二极管包括支撑衬底，形成在支撑衬底上的半导体层以及位于支撑衬底和下半导体层之间的金属图案。 半导体层包括第一导电类型的上半导体层，有源层和第二导电类型的下半导体层。 半导体层在牺牲衬底上生长，并且支撑衬底与牺牲衬底是均匀的。