公开(公告)号：US11664216B2

公开(公告)日：2023-05-30

申请号：US17182555

申请日：2021-02-23

Applicant: Applied Materials, Inc.

Inventor： Chien-Teh Kao ,  Xiangxin Rui

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/44 ,  B05D1/00

CPC classification number: H01L21/0228 ,  B05D1/60 ,  C23C16/4412 ,  C23C16/45527 ,  H10N70/023

Abstract: Embodiments described herein provide a gas supply system for reducing purge time and increasing processing throughput, and an atomic layer deposition (ALD) chamber having the same. The gas supply system includes an inert gas line and a precursor supply line. The inert gas line is configured to be coupled to an inlet of the chamber separate from the precursor supply line. Therefore, the inert gas is supplied concurrently to the precursor supply line and the processing region of the chamber such that total purge time is reduced. The reduction of the total purge time due to the gas supply system increases purge efficiency and increases processing throughput. Furthermore, the gas supply system allows inert gas to be utilized as a dilution gas during flow of precursors.

公开(公告)号：US10751765B2

公开(公告)日：2020-08-25

申请号：US16102560

申请日：2018-08-13

Applicant: Applied Materials, Inc.

Inventor： Tae Kyung Won ,  Young Dong Lee ,  Chien-Teh Kao ,  Soo Young Choi ,  Sanjay D. Yadav

IPC: C23C16/452 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  B08B7/00

Abstract: The present disclosure relates to a chemical vapor deposition system for processing large area substrates. The chemical vapor deposition system includes a chemical vapor deposition chamber comprising a chamber body having a plurality of sidewalls, a lid assembly, and a bottom. A substrate support extends upward from the bottom within the chamber body. A gas distribution plate is located within the lid assembly. One or more cleaning gas injector ports coupled to corresponding one or more inlets in the plurality of sidewalls. Each of the one or more cleaning gas injector ports has a substantially oval-shaped or circular-shaped cleaning gas nozzle configured to provide reactive species from a remote plasma source to clean an underside of the gas distribution plate.

公开(公告)号：US10697062B2

公开(公告)日：2020-06-30

申请号：US16032854

申请日：2018-07-11

Applicant: Applied Materials, Inc.

Inventor： Chien-Teh Kao ,  Jeffrey A. Kho ,  Xiangxin Rui ,  Jianhua Zhou ,  Shinichi Kurita ,  Shouqian Shao ,  Guangwei Sun

IPC: C23C16/455 ,  C23C16/44

Abstract: Embodiments described herein provide a chamber having a gas flow inlet guide to uniformly deliver process gas and a gas flow outlet guide to effectively purge process gasses and reduce purge time. The chamber includes a chamber body having a process gas inlet and a process gas outlet, a lid assembly, a process gas inlet and a process gas outlet configured to be in fluid communication with a processing region in the chamber, a gas flow inlet guide disposed in the process gas inlet, and a gas flow outlet guide disposed in the process gas outlet. The gas flow inlet guide includes a flow modulator and at least two first inlet guide channels having first inlet guide channel areas that are different. The gas flow outlet guide includes at least two first outlet guide channels having first outlet guide channel areas that are different.

公开(公告)号：US09982343B2

公开(公告)日：2018-05-29

申请号：US13715295

申请日：2012-12-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Chien-Teh Kao ,  Hyman W. H. Lam

IPC: C23C16/00 ,  H01L21/00 ,  C23C16/455 ,  H01J37/32 ,  C23C16/44 ,  C23C16/509

CPC classification number: C23C16/455 ,  C23C16/4408 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/5096 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449

Abstract: Apparatus for providing plasma to a process chamber may include an electrode; a first ground plate disposed beneath the electrode defining a cavity therebetween; an insulator disposed between the electrode and first ground plate to prevent direct contact therebetween; a second ground plate disposed beneath the first ground plate defining a first channel; a plurality of first through holes through the first ground plate to fluidly couple the channel and cavity; a first gas inlet coupled to the first channel; a third ground plate disposed beneath the second ground plate defining a second channel; a plurality of conduits through the ground plates to fluidly couple the cavity to an area beneath the third ground plate; a plurality of gas outlet holes through the third ground plate to fluidly couple the second channel to the area beneath the third ground plate; and a second gas inlet coupled to the second channel.

公开(公告)号：US09831109B2

公开(公告)日：2017-11-28

申请号：US14204252

申请日：2014-03-11

Applicant: Applied Materials, Inc.

Inventor： Ilker Durukan ,  Joel M. Huston ,  Dien-Yeh Wu ,  Chien-Teh Kao ,  Mei Chang

IPC: A62C2/08 ,  H01L21/67

CPC classification number: H01L21/67126 ,  H01L21/6719

Abstract: Lid assemblies for processing chamber and processing chambers including the lid assemblies are described. The lid assemblies include a high temperature lid module and a housing. The high temperature lid module being positioned adjacent a process liner of a processing chamber. The flexible housing positioned around the high temperature lid module and joined to the high temperature lid module with an elastomeric ring.

公开(公告)号：US09353440B2

公开(公告)日：2016-05-31

申请号：US14137007

申请日：2013-12-20

Applicant: Applied Materials, Inc.

Inventor： Zhenbin Ge ,  Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang

IPC: C23C16/455 ,  B08B9/032 ,  C23C16/44

CPC classification number: C23C16/45565 ,  B08B9/0325 ,  C23C14/22 ,  C23C16/4412 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/52 ,  Y10T137/4259

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Abstract translation: 提供了具有输送通道的气体分配设备，其具有入口端，出口端和沿着该长度间隔开的多个孔。 入口端可连接到入口气体源，出口端可与真空源连接。 还提供了具有螺旋输送通道的气体分配设备，缠绕在一起的螺旋输送通道，分流输送通道，合并输送通道和成形输送通道，其中入口端和出口端构造成用于在输送通道内快速交换气体。

公开(公告)号：US09109754B2

公开(公告)日：2015-08-18

申请号：US13653952

申请日：2012-10-17

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Mei Chang ,  Faruk Gungor ,  Paul F. Ma ,  David Chu ,  Chien-Teh Kao ,  Hyman Lam ,  Dien-Yeh Wu

IPC: F16K11/20 ,  F17D3/00

CPC classification number: F17D3/00 ,  Y10T137/7833

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Abstract translation: 提供了具有输送通道的气体分配设备，其具有入口端，出口端和沿着该长度间隔开的多个孔。 入口端可连接到入口气体源，出口端可与真空源连接。 还提供了具有螺旋输送通道的气体分配设备，缠绕在一起的螺旋输送通道，分流输送通道，合并输送通道和成形输送通道，其中入口端和出口端构造成用于在输送通道内快速交换气体。