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    Methods and apparatus for ALD processes
    1.
    发明授权
    Methods and apparatus for ALD processes 有权

    公开(公告)号：US11306393B2

    公开(公告)日：2022-04-19

    申请号：US16517255

    申请日：2019-07-19

    Applicant: Applied Materials, Inc.

    Inventor： Jeffrey A. Kho ,  Chien-Teh Kao ,  Jianhua Zhou

    IPC: C23C16/455 ,  H01L51/56 ,  C23C16/52

    Abstract: The present disclosure relates to methods and apparatus for an atomic layer deposition (ALD) chamber. In one embodiment, a lid assembly is provided that includes a multi-channel showerhead having a plurality of first gas channels and a plurality of second gas channels that are fluidly isolated from each of the first gas channels, and a flow guide coupled to opposing sides of the multi-channel showerhead, each of the flow guides being fluidly coupled to the plurality of second gas channels.

    SUPPORT ASSEMBLY
    2.
    发明申请
    SUPPORT ASSEMBLY 有权

    公开(公告)号：US20210225640A1

    公开(公告)日：2021-07-22

    申请号：US17225311

    申请日：2021-04-08

    Applicant: Applied Materials, Inc.

    Inventor： Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang ,  Xiaoxiong Yuan

    IPC: H01L21/02 ,  H01J37/32 ,  H01L21/67 ,  C23C14/54 ,  C23C14/50 ,  C23C14/02

    Abstract: A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The shaft has a vacuum conduit, a heat transfer fluid conduit and a gas conduit formed therein. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A thermocouple is embedded in the disk-shaped body. A flange extends radially outward from the cylindrical outer surface, wherein the lower surface of the disk-shaped body comprises one side of the flange. A fluid channel is formed in the disk-shaped body proximate the flange and lower surface. The fluid channel is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves are formed in the upper surface of the disk-shaped body, and are coupled by a hole in the disk-shaped body to the vacuum conduit of the shaft. A gas conduit is formed through the disk-shaped body and couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body. The gas conduit in the disk-shaped body has an orientation substantially perpendicular to a centerline of the disk-shaped body.

    Methods and apparatus for in-situ cleaning of a process chamber
    4.
    发明授权
    Methods and apparatus for in-situ cleaning of a process chamber 有权

    公开(公告)号：US09627185B2

    公开(公告)日：2017-04-18

    申请号：US14557671

    申请日：2014-12-02

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Joel M. Huston ,  Nicholas R. Denny ,  Chien-Teh Kao

    IPC: B08B7/00 ,  H01J37/32

    CPC classification number: H01J37/32862 ,  H01J37/32449 ,  H01J37/32834

    Abstract: Methods and apparatus for in-situ cleaning of substrate processing chambers are provided herein. A substrate processing chamber may include a chamber body enclosing an inner volume; a chamber lid removably coupled to the chamber body and including a first flow channel fluidly coupled to the inner volume to selectively open or seal the inner volume to or from a first outlet; a chamber floor including a second flow channel fluidly coupled to the inner volume to selectively open or seal the inner volume to or from a first inlet; and a pump ring disposed in and in fluid communication with the inner volume, the pump ring comprising an upper chamber fluidly coupled to a lower chamber, and a second outlet fluidly coupled to the lower chamber to selectively open or seal the inner volume to or from the second outlet.

    Dual-Direction Chemical Delivery System For ALD/CVD Chambers
    6.
    发明申请
    Dual-Direction Chemical Delivery System For ALD/CVD Chambers 有权
    ALD / CVD室的双向化学物质输送系统

    公开(公告)号：US20160273108A1

    公开(公告)日：2016-09-22

    申请号：US15152731

    申请日：2016-05-12

    Applicant: Applied Materials, Inc.

    Inventor： Zhenbin Ge ,  Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang

    IPC: C23C16/455 ,  C23C14/22 ,  C23C16/52

    CPC classification number: C23C16/45565 ,  B08B9/0325 ,  C23C14/22 ,  C23C16/4412 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/52 ,  Y10T137/4259

    Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

    Abstract translation: 提供了具有输送通道的气体分配设备，其具有入口端，出口端和沿着该长度间隔开的多个孔。 入口端可连接到入口气体源，出口端可与真空源连接。 还提供了具有螺旋输送通道的气体分配设备，缠绕在一起的螺旋输送通道，分流输送通道，合并输送通道和成形输送通道，其中入口端和出口端构造成用于在输送通道内快速交换气体。

    IN-SITU CORROSION RESISTANT SUBSTRATE SUPPORT COATING
    7.
    发明申请
    IN-SITU CORROSION RESISTANT SUBSTRATE SUPPORT COATING 有权
    现场耐腐蚀基材支撑涂料

    公开(公告)号：US20150345017A1

    公开(公告)日：2015-12-03

    申请号：US14291781

    申请日：2014-05-30

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Mei Chang ,  Chien-Teh Kao ,  Juno Yu-Ting Huang

    IPC: C23C16/455 ,  C23C16/458 ,  C23C16/06

    CPC classification number: C23C16/45525 ,  C23C16/22 ,  C23C16/4401 ,  C23C16/4581 ,  H01J37/32477 ,  H01J37/32715

    Abstract: Corrosion resistant substrate supports and methods of making corrosion resistant substrate supports are provided herein. In some embodiments, a method of making corrosion resistant substrate supports includes exposing the substrate support disposed within a substrate processing chamber to a process gas comprising an aluminum containing precursor; and depositing an aluminum containing layer atop surfaces of the substrate support.

    Abstract translation: 本文提供了耐腐蚀基板支撑件和制造耐腐蚀基板支撑件的方法。 在一些实施例中，制造耐腐蚀的衬底支撑件的方法包括将设置在衬底处理室内的衬底支撑件暴露于包含含铝前体的工艺气体; 以及在所述基底支撑体的表面的顶部上沉积含铝层。

    ALD process and hardware with improved purge efficiency
    10.
    发明授权
    ALD process and hardware with improved purge efficiency 有权

    公开(公告)号：US10964533B2

    公开(公告)日：2021-03-30

    申请号：US16229754

    申请日：2018-12-21

    Applicant: Applied Materials, Inc.

    Inventor： Chien-Teh Kao ,  Xiangxin Rui

    IPC: H01L21/02 ,  C23C16/455 ,  C23C16/44

    Abstract: Embodiments described herein provide a gas supply system for reducing purge time and increasing processing throughput, and an atomic layer deposition (ALD) chamber having the same. The gas supply system includes an inert gas line and a precursor supply line. The inert gas line is configured to be coupled to an inlet of the chamber separate from the precursor supply line. Therefore, the inert gas is supplied concurrently to the precursor supply line and the processing region of the chamber such that total purge time is reduced. The reduction of the total purge time due to the gas supply system increases purge efficiency and increases processing throughput. Furthermore, the gas supply system allows inert gas to be utilized as a dilution gas during flow of precursors.

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