公开(公告)号：US20160155638A1

公开(公告)日：2016-06-02

申请号：US15016328

申请日：2016-02-05

Applicant: Applied Materials, Inc.

Inventor： Stephen MOFFATT

IPC: H01L21/02

CPC classification number: H01L21/02686 ,  C30B13/24 ,  C30B29/403 ,  H01L21/02532 ,  H01L21/02568 ,  H01L21/2636 ,  H01L21/268 ,  H01L29/685 ,  H01L31/1872 ,  H01L33/0095 ,  Y02E10/50 ,  Y02P70/521

Abstract: A method and apparatus for forming a crystalline semiconductor layer on a substrate are provided. A semiconductor layer is formed by vapor deposition. A pulsed laser melt/recrystallization process is performed to convert the semiconductor layer to a crystalline layer. Laser, or other electromagnetic radiation, pulses are formed into a pulse train and uniformly distributed over a treatment zone, and successive neighboring treatment zones are exposed to the pulse train to progressively convert the deposited material to crystalline material.

公开(公告)号：US20150087136A1

公开(公告)日：2015-03-26

申请号：US14487356

申请日：2014-09-16

Applicant: Applied Materials, Inc.

Inventor： James Francis MACK ,  Stephen MOFFATT

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/768 ,  H01L21/762 ,  H01J37/32 ,  C23C16/455

CPC classification number: H01L21/306 ,  C23C16/04 ,  C23C16/45544 ,  H01J37/32431 ,  H01J2237/334 ,  H01L21/02104 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/28525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/681 ,  H01L21/76224 ,  H01L21/76838

Abstract: An apparatus and use of the apparatus to form nanometer sized features on a workpiece includes a plurality of individually biasable tips, and each tip has a diameter on the scale or 10 nm or less. By moving the tips above the surface of a workpiece in the presence of reactants, features can be directly formed on the workpiece on a sub-micron size, below the resolution of current photolithography. The features may be etched into a workpiece, or formed thereover.

Abstract translation: 该装置在工件上形成纳米尺寸特征的装置和用途包括多个单独可偏压的尖端，并且每个尖端具有刻度上的直径或10nm或更小的直径。 通过在存在反应物的情况下将尖端移动到工件的表面上方，可以以低于当前光刻分辨率的亚微米尺寸直接在工件上形成特征。 特征可以被蚀刻到工件中，或者形成在其上。

公开(公告)号：US20150041453A1

公开(公告)日：2015-02-12

申请号：US14456682

申请日：2014-08-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Kim VELLORE ,  Dinesh KANAWADE ,  Stephen MOFFATT ,  Aaron MILLER ,  Leonid M. TERTITSKI ,  Norman L. TAM ,  Michael LIU ,  Colin FOX

IPC: H01L21/67

CPC classification number: H01L21/67248 ,  H01L21/67115

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for visual lamp failure detection in a processing chamber, such as an RTP chamber. Visual feedback is facilitated through the use of a wide-angle lens positioned to view lamps within the process chamber. The wide-angle lens is positioned within a probe and secured using a spring in order to withstand high temperature processing. A camera coupled to the lens is adapted to capture an image of the lamps within the process chamber. The captured image of the lamps is then compared to a reference image to determine if the lamps are functioning as desired.

Abstract translation: 本公开的实施例一般涉及用于处理室（例如RTP室）中的视觉灯故障检测的方法和装置。 通过使用定位成观察处理室内的灯的广角透镜来促进视觉反馈。 广角镜头位于探头内并用弹簧固定，以承受高温处理。 耦合到透镜的照相机适于捕获处理室内的灯的图像。 然后将捕获的灯的图像与参考图像进行比较，以确定灯是否按需要起作用。

公开(公告)号：US20140254022A1

公开(公告)日：2014-09-11

申请号：US14137592

申请日：2013-12-20

Applicant: Applied Materials, Inc.

Inventor： Jiping LI ,  Aaron Muir HUNTER ,  Bruce E. ADAMS ,  Douglas E. HOLMGREN ,  Samuel C. HOWELLS ,  Theodore P. MOFFITT ,  Stephen MOFFATT

IPC: G02B3/00

CPC classification number: G02B3/0037 ,  G02B27/48

Abstract: Embodiments described herein relate to thermal processing of semiconductor substrates. More specifically, embodiments described herein relate to laser thermal processing of semiconductor substrates. In certain embodiments, a uniformizer is provided to spatially and temporally decorrelate a coherent light image.

Abstract translation: 本文所述的实施例涉及半导体衬底的热处理。 更具体地，本文所述的实施例涉及半导体衬底的激光热处理。 在某些实施例中，提供均匀器来空间和时间地去相关联相干光图像。

公开(公告)号：US20140209583A1

公开(公告)日：2014-07-31

申请号：US14229238

申请日：2014-03-28

Applicant: Applied Materials, Inc.

Inventor： Stephen MOFFATT ,  Abhilash J. MAYUR ,  Sundar RAMAMURTHY ,  Joseph RANISH ,  Aaron HUNTER

IPC: B23K26/06 ,  B23K26/12

CPC classification number: H01L21/67115 ,  B23K26/0639 ,  B23K26/064 ,  B23K26/08 ,  B23K26/127 ,  F27B17/0025 ,  H01L21/67248

Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

Abstract translation: 提供了一种处理基板的方法和装置。 衬底位于热处理室中的支撑件上。 电磁辐射被引向衬底以退火衬底的一部分。 其他电磁辐射被引向衬底以预热衬底的一部分。 预热减少了预热区域和退火区域之间的边界处的热应力。 根据具体实施方案的需要，预期任何数量的退火和预热区域具有变化的形状和温度曲线。 可以使用任何方便的电磁辐射源，例如激光器，加热灯，白光灯或闪光灯。

公开(公告)号：US20140192533A1

公开(公告)日：2014-07-10

申请号：US14180010

申请日：2014-02-13

Applicant: Applied Materials, Inc.

Inventor： Stephen MOFFATT

IPC: G02B27/48

CPC classification number: G02B27/48 ,  B23K26/0622 ,  B23K26/0624 ,  B23K26/0626 ,  B23K26/0648 ,  F21V5/002 ,  F21V5/004 ,  F21V5/007 ,  G02B3/0056 ,  G02B5/021 ,  G02B5/0278 ,  G02B5/04 ,  G02B27/10 ,  H01L21/67115 ,  H01S3/0057

Abstract: Embodiments described herein provide apparatus and methods for processing semiconductor substrates with uniform laser energy. A laser pulse or beam is directed to a spatial homogenizer, which may be a plurality of lenses arranged along a plane perpendicular to the optical path of the laser energy, an example being a microlens array. The spatially uniformized energy produced by the spatial homogenizer is then directed to a refractive medium that has a plurality of thicknesses. Each thickness of the plurality of thicknesses is different from the other thicknesses by at least the coherence length of the laser energy.

Abstract translation: 本文描述的实施例提供了用于以均匀的激光能量处理半导体衬底的装置和方法。 激光脉冲或光束被引导到空间均质器，其可以是沿着垂直于激光能量的光路的平面布置的多个透镜，例如微透镜阵列。 由空间均化器产生的空间均匀化的能量然后被引导到具有多个厚度的折射介质。 多个厚度的每个厚度至少与激光能量的相干长度不同于其它厚度。

公开(公告)号：US20240145274A1

公开(公告)日：2024-05-02

申请号：US18492205

申请日：2023-10-23

Applicant: Applied Materials, Inc.

Inventor： Wolfgang R. ADERHOLD ,  Stephen MOFFATT

IPC: H01L21/67

CPC classification number: H01L21/67248 ,  H01L21/67253

Abstract: Examples described herein generally relate to apparatus and methods for rapid thermal processing (RTP) of a substrate. The present disclosure discloses pulsed radiation sources used to measure a broad range of low to high temperatures in the RTP chamber, each at a discrete wavelength, are used at a low temperature regime before using one laser at a discrete wavelength for higher temperatures. In another example, a single laser is used for both the low temperature regime and higher temperatures. These methods are useful for detection of a broad range of low to high temperatures in the RTP chamber with varying substrate types.

公开(公告)号：US20210322934A1

公开(公告)日：2021-10-21

申请号：US17365791

申请日：2021-07-01

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Lara HAWRYLCHAK ,  Eric Kihara SHONO ,  Kartik SHAH ,  Christopher S. OLSEN ,  Sairaju TALLAVARJULA ,  Kailash PRADHAN ,  Rene GEORGE ,  Johanes F. SWENBERG ,  Stephen MOFFATT

IPC: B01F3/02 ,  B01J8/22 ,  H01L21/67 ,  B01J4/00 ,  C23C16/455

Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.

公开(公告)号：US20210220949A1

公开(公告)日：2021-07-22

申请号：US17203239

申请日：2021-03-16

Applicant: Applied Materials, Inc.

Inventor： Stephen MOFFATT ,  Joseph M. RANISH

IPC: B23K26/352 ,  F27B5/18 ,  H01L21/268 ,  B23K26/354 ,  B23K26/00 ,  B23K26/08 ,  B23K26/12 ,  B23K26/0622 ,  F27D21/00 ,  H01L21/225 ,  H01L21/324 ,  H01L21/67

Abstract: The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are delivered to a substrate using a flash lamp or laser apparatus. The pulses may be from about 1 nsec to about 10 msec long, and each pulse has less energy than that required to melt the substrate material. The interval between pulses is generally long enough to allow the energy imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of the substrate at a time. Further embodiments provide an apparatus for powering a radiation assembly, and apparatuses for detecting the effect of pulses on a substrate.

公开(公告)号：US20190105614A1

公开(公告)日：2019-04-11

申请号：US16116531

申请日：2018-08-29

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Lara HAWRYLCHAK ,  Eric Kihara SHONO ,  Kartik SHAH ,  Christopher S. OLSEN ,  Sairaju TALLAVARJULA ,  Kailash PRADHAN ,  Rene GEORGE ,  Johanes S. SWENBERG ,  Stephen MOFFATT

IPC: B01F3/02 ,  H01L21/67 ,  B01J8/22

Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.