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    SUPPLEMENTAL ENERGY FOR LOW TEMPERATURE PROCESSES
    1.
    发明申请
    SUPPLEMENTAL ENERGY FOR LOW TEMPERATURE PROCESSES 有权

    公开(公告)号：US20220162756A1

    公开(公告)日：2022-05-26

    申请号：US17525426

    申请日：2021-11-12

    Applicant: Applied Materials, Inc.

    Inventor： David K. CARLSON ,  Stephen MOFFATT

    IPC: C23C16/48 ,  C23C16/52 ,  C23C14/54 ,  C23C14/34

    Abstract: Embodiments of the present disclosure generally relate to semiconductor processing, and specifically to methods and apparatus for surface modification of substrates. In an embodiment, a substrate modification method is provided. The method includes positioning a substrate within a processing chamber; and depositing a material on a portion of the substrate by a deposition process, wherein the deposition process comprises: thermally heating the substrate to a temperature of less than about 500° C.; delivering a first electromagnetic energy from an electromagnetic energy source to the substrate to modify a first region of the substrate, the first region of the substrate being at or near an upper surface of the substrate; and depositing a first material on the first region while delivering the first electromagnetic energy.

    STACKED PIXEL STRUCTURE FORMED USING EPITAXY
    2.
    发明申请
    STACKED PIXEL STRUCTURE FORMED USING EPITAXY 有权

    公开(公告)号：US20210366976A1

    公开(公告)日：2021-11-25

    申请号：US16878142

    申请日：2020-05-19

    Applicant: Applied Materials, Inc.

    Inventor： Papo CHEN ,  John BOLAND ,  Schubert S. CHU ,  Errol Antonio C. SANCHEZ ,  Stephen MOFFATT

    IPC: H01L27/146

    Abstract: Generally, examples described herein relate to methods and processing chambers and systems for forming a stacked pixel structure using epitaxial growth processes and device structures formed thereby. In an example, a first sensor layer is epitaxially grown on a crystalline surface on a substrate. A first isolation structure is epitaxially grown on the first sensor layer. A second sensor layer is epitaxially grown on the first isolation structure. A second isolation structure is epitaxially grown on the second sensor layer. A third sensor layer is epitaxially grown on the second isolation structure.

    APPARATUS AND METHOD TO MEASURE TEMPERATURE OF 3D SEMICONDUCTOR STRUCTURES VIA LASER DIFFRACTION
    3.
    发明申请
    APPARATUS AND METHOD TO MEASURE TEMPERATURE OF 3D SEMICONDUCTOR STRUCTURES VIA LASER DIFFRACTION 审中-公开

    公开(公告)号：US20180283957A1

    公开(公告)日：2018-10-04

    申请号：US15912365

    申请日：2018-03-05

    Applicant: Applied Materials, Inc.

    Inventor： Heng PAN ,  Matthew Scott ROGERS ,  Aaron Muir HUNTER ,  Stephen MOFFATT

    IPC: G01J5/08 ,  G01J5/00

    Abstract: Embodiments of the present invention generally relate to apparatus for and methods of measuring and monitoring the temperature of a substrate having a 3D feature thereon. The apparatus include a light source for irradiating a substrate having a 3D feature thereon, a focus lens for gathering and focusing reflected light, and an emissometer for detecting the emissivity of the focused reflected light. The apparatus may also include a beam splitter and an imaging device. The imaging device provides a magnified image of the diffraction pattern of the reflected light. The method includes irradiating a substrate having a 3D feature thereon with light, and focusing reflected light with a focusing lens. The focused light is then directed to a sensor and the emissivity of the substrate is measured. The reflected light may also impinge upon an imaging device to generate a magnified image of the diffraction pattern of the reflected light.

    CRYSTALLIZATION PROCESSING FOR SEMICONDUCTOR APPLICATIONS
    5.
    发明申请
    CRYSTALLIZATION PROCESSING FOR SEMICONDUCTOR APPLICATIONS 有权
    半导体应用的结晶处理

    公开(公告)号：US20150013588A1

    公开(公告)日：2015-01-15

    申请号：US14495533

    申请日：2014-09-24

    Applicant: Applied Materials, Inc.

    Inventor： Stephen MOFFATT

    IPC: C30B13/24 ,  C30B29/40

    CPC classification number: H01L21/02686 ,  C30B13/24 ,  C30B29/403 ,  H01L21/02532 ,  H01L21/02568 ,  H01L21/2636 ,  H01L21/268 ,  H01L29/685 ,  H01L31/1872 ,  H01L33/0095 ,  Y02E10/50 ,  Y02P70/521

    Abstract: A method and apparatus for forming a crystalline semiconductor layer on a substrate are provided. A semiconductor layer is formed by vapor deposition. A pulsed laser melt/recrystallization process is performed to convert the semiconductor layer to a crystalline layer. Laser, or other electromagnetic radiation, pulses are formed into a pulse train and uniformly distributed over a treatment zone, and successive neighboring treatment zones are exposed to the pulse train to progressively convert the deposited material to crystalline material.

    Abstract translation: 提供了一种在基板上形成晶体半导体层的方法和装置。 通过气相沉积形成半导体层。 进行脉冲激光熔融/再结晶工艺以将半导体层转变成晶体层。 激光或其他电磁辐射脉冲形成脉冲序列并均匀地分布在处理区域上，并且连续的相邻处理区域暴露于脉冲序列以逐渐将沉积的材料转化为结晶材料。

    AMBIENT LAMINAR GAS FLOW DISTRIBUTION IN LASER PROCESSING SYSTEMS
    6.
    发明申请
    AMBIENT LAMINAR GAS FLOW DISTRIBUTION IN LASER PROCESSING SYSTEMS 审中-公开

    公开(公告)号：US20170082367A1

    公开(公告)日：2017-03-23

    申请号：US15366908

    申请日：2016-12-01

    Applicant: Applied Materials, Inc.

    Inventor： Stephen MOFFATT ,  Aaron Muir HUNTER

    IPC: F27D21/00 ,  H01L21/67 ,  F27D5/00

    CPC classification number: F27D21/00 ,  F27D5/0037 ,  F27D2021/0078 ,  H01L21/67115

    Abstract: A method and apparatus for annealing semiconductor substrates is disclosed. The apparatus has an annealing energy source and a substrate support, with a shield member disposed between the annealing energy source and the substrate support. The shield member is a substantially flat member having a dimension larger than a substrate processed on the substrate support, with a window covering a central opening in the substantially flat member. The central opening has a gas inlet portal and a gas outlet portal, each in fluid communication with a gas inlet plenum and gas outlet plenum, respectively. A connection member is disposed around the central opening and holds the window over the central opening. Connection openings in the connection member are in fluid communication with the gas inlet plenum and gas outlet plenum, respectively, through a gas inlet conduit and a gas outlet conduit formed through the connection member.

    APPARATUS AND METHOD OF IMPROVING BEAM SHAPING AND BEAM HOMOGENIZATION
    8.
    发明申请
    APPARATUS AND METHOD OF IMPROVING BEAM SHAPING AND BEAM HOMOGENIZATION 有权
    改进光束形成和光束均匀化的装置和方法

    公开(公告)号：US20150053658A1

    公开(公告)日：2015-02-26

    申请号：US14480415

    申请日：2014-09-08

    Applicant: Applied Materials, Inc.

    Inventor： Bruce E. ADAMS ,  Samuel C. HOWELLS ,  Dean JENNINGS ,  Jiping LI ,  Timothy N. THOMAS ,  Stephen MOFFATT

    IPC: B23K26/06 ,  G02B27/09 ,  B23K26/073

    CPC classification number: B23K26/073 ,  B23K26/0613 ,  B23K26/0622 ,  B23K26/067 ,  B23K26/0732 ,  B23K2103/56 ,  G02B27/0961

    Abstract: The present invention generally relates to an optical system that is able to reliably deliver a uniform amount of energy across an anneal region contained on a surface of a substrate. The optical system is adapted to deliver, or project, a uniform amount of energy having a desired two-dimensional shape on a desired region on the surface of the substrate. Typically, the anneal regions may be square or rectangular in shape. Generally, the optical system and methods of the present invention are used to preferentially anneal one or more regions found within the anneal regions by delivering enough energy to cause the one or more regions to re-melt and solidify.

    Abstract translation: 本发明一般涉及一种光学系统，其能够在包含在基板的表面上的退火区域上可靠地传递均匀的能量。 光学系统适于在衬底的表面上的期望区域上传送或投影具有期望的二维形状的均匀量的能量。 通常，退火区域可以是正方形或矩形形状。 通常，本发明的光学系统和方法用于通过递送足够的能量以使一个或多个区域再熔化和固化来优先退火在退火区域内发现的一个或多个区域。

    THERMAL TREATMENT METHODS AND APPARATUS
    10.
    发明申请
    THERMAL TREATMENT METHODS AND APPARATUS 审中-公开
    热处理方法和装置

    公开(公告)号：US20140148017A1

    公开(公告)日：2014-05-29

    申请号：US14086773

    申请日：2013-11-21

    Applicant: Applied Materials, Inc.

    Inventor： Bruce E. ADAMS ,  Stephen MOFFATT

    IPC: H01L21/67 ,  H01L21/324

    CPC classification number: H01L21/324 ,  H01L21/268 ,  H01L21/67115

    Abstract: Embodiments described herein provide methods and apparatus for thermally treating a substrate. A first radiant energy source that delivers a first radiation at a first fluence and a second radiant energy source that delivers a second radiation at a second fluence are disposed to direct energy toward a substrate support positioned to receive the first radiation at a first location and the second radiation at a second location, wherein the first fluence is 10 to 100 times the second fluence and the first radiation cannot reach the second location. The first radiant energy source may be a laser, and the second radiant energy source may be a plurality of lasers, for example a pulsed laser assembly with a plurality of pulsed lasers. The second radiant energy source may also be a flash lamp. The first and second radiant energy sources may be in the same chamber or different chambers.

    Abstract translation: 本文所述的实施方案提供了用于热处理基底的方法和装置。 设置以第一注量递送第一辐射的第一辐射能量源和以第二注量递送第二辐射的第二辐射能源，以将能量引向定位成在第一位置处接收第一辐射的基底支撑件，并且 在第二位置处的第二辐射，其中第一注量是第二注量的10至100倍，并且第一辐射不能到达第二位置。 第一辐射能量源可以是激光器，并且第二辐射能量源可以是多个激光器，例如具有多个脉冲激光器的脉冲激光器组件。 第二辐射能源也可以是闪光灯。 第一和第二辐射能源可以在相同的室或不同的室中。

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