公开(公告)号：US10818510B2

公开(公告)日：2020-10-27

申请号：US16260041

申请日：2019-01-28

Applicant: Applied Materials, Inc.

Inventor： Tobin Kaufman-Osborn ,  Keith Tatseun Wong

IPC: H01L21/32 ,  H01L21/3105 ,  H01L21/768

Abstract: Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a self-assembled monolayer (SAM) is used to achieve selective area deposition. Methods described herein relate to alternating SAM molecule and hydroxyl moiety exposure operations which may be utilized to form SAM layers suitable for blocking deposition of subsequently deposited materials.

公开(公告)号：US20200240014A1

公开(公告)日：2020-07-30

申请号：US16776204

申请日：2020-01-29

Applicant: Applied Materials, Inc

Inventor： Eric Kihara Shono ,  Vishwas Kumar Pandey ,  Christopher S. Olsen ,  Kartik Shah ,  Hansel Lo ,  Tobin Kaufman-Osborn ,  Rene George ,  Lara Hawrylchak ,  Erika Hansen

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/458 ,  C23C16/52 ,  C23C16/40

Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions do not intersect a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.

公开(公告)号：US10366878B2

公开(公告)日：2019-07-30

申请号：US15587997

申请日：2017-05-05

Applicant: Applied Materials, Inc.

Inventor： Jessica Sevanne Kachian ,  Tobin Kaufman-Osborn ,  David Thompson

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/455 ,  C23C16/40 ,  C23C16/04 ,  C23C16/02 ,  H01L21/3105 ,  H01L21/768

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include net chemisorption of a self-assembled monolayer on the second surface to prevent deposition of the film on the second surface.

公开(公告)号：US10192752B2

公开(公告)日：2019-01-29

申请号：US15446816

申请日：2017-03-01

Applicant: Applied Materials, Inc.

Inventor： Tobin Kaufman-Osborn ,  Keith Tatseun Wong

IPC: H01L21/32 ,  H01L21/3105

Abstract: Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a self-assembled monolayer (SAM) is used to achieve selective area deposition. Methods described herein relate to alternating SAM molecule and hydroxyl moiety exposure operations which may be utilized to form SAM layers suitable for blocking deposition of subsequently deposited materials.

公开(公告)号：US20180366317A1

公开(公告)日：2018-12-20

申请号：US16008495

申请日：2018-06-14

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Yuanhong Guo ,  Liqi Wu ,  Michael S. Jackson ,  Ludovic Godet ,  Tobin Kaufman-Osborn ,  Erica Chen ,  Paul F. Ma

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/67

Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

公开(公告)号：US20250062107A1

公开(公告)日：2025-02-20

申请号：US18234169

申请日：2023-08-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Martin Hilkene ,  Tobin Kaufman-Osborn ,  Yunil Cho

IPC: H01J37/32 ,  H01J37/244

Abstract: A method of monitoring a plasma-based process in a process chamber includes measuring a first temperature at a first location associated with a process chamber during a plasma-based process; and determining a value representative of a first radical species flux associated with the plasma-based process based on the first temperature. The method includes a trained machine learning model to determine if a value representative of a radical species flux satisfies a radical species flux drift threshold.

公开(公告)号：US20240321564A1

公开(公告)日：2024-09-26

申请号：US18124401

申请日：2023-03-21

Applicant: Applied Materials, Inc.

Inventor： Tobin Kaufman-Osborn ,  MARTIN HILKENE

IPC: H01J37/32

CPC classification number: H01J37/32926 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32724

Abstract: Embodiments disclosed herein may include a processing tool. In an embodiment, the processing tool includes a chamber, and a remote plasma source (RPS) coupled to the chamber by an adapter. In an embodiment, the processing tool further comprises an RPS match coupled to the RPS, and a first temperature sensor in the chamber. In an embodiment, a second temperature sensor is in the adapter.

公开(公告)号：US11821085B2

公开(公告)日：2023-11-21

申请号：US17182906

申请日：2021-02-23

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Tobin Kaufman-Osborn ,  Kurt Fredrickson ,  Thomas Knisley ,  Liqi Wu

IPC: C23C16/455 ,  H01L21/02

CPC classification number: C23C16/45553 ,  C23C16/45527 ,  H01L21/0228 ,  H01L21/02175

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

公开(公告)号：US11725274B2

公开(公告)日：2023-08-15

申请号：US16433064

申请日：2019-06-06

Applicant: Applied Materials, Inc.

Inventor： Tobin Kaufman-Osborn ,  Srinivas D. Nemani ,  Ludovic Godet ,  Qiwei Liang ,  Adib Khan

IPC: C23C16/02 ,  C23C16/04 ,  H01L21/67 ,  H01L21/687 ,  C23C16/455 ,  C23C16/54 ,  C23C16/56 ,  H01L21/02 ,  H01J37/32 ,  H01L21/677 ,  H01L21/8234

CPC classification number: C23C16/042 ,  C23C16/02 ,  C23C16/45502 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/45582 ,  C23C16/54 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32724 ,  H01J37/32733 ,  H01J37/32899 ,  H01L21/0228 ,  H01L21/02263 ,  H01L21/02299 ,  H01L21/02304 ,  H01L21/6719 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/67754 ,  H01L21/68785 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/823431

Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.

公开(公告)号：US20220254622A1

公开(公告)日：2022-08-11

申请号：US17169866

申请日：2021-02-08

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Tobin Kaufman-Osborn

IPC: H01L21/02

Abstract: Methods of forming an oxide layer over a semiconductor substrate are provided. The method includes forming a first oxide containing portion of the oxide layer over a semiconductor substrate at a first growth rate by exposing the substrate to a first gas mixture having a first oxygen percentage at a first temperature. A second oxide containing portion is formed over the substrate at a second growth rate by exposing the substrate to a second gas mixture having a second oxygen percentage at a second temperature. A third oxide containing portion is formed over the substrate at a third growth rate by exposing the substrate to a third gas mixture having a third oxygen percentage at a third temperature. The first growth rate is slower than each subsequent growth rate and each growth rate subsequent to the second growth rate is within 50% of each other.