公开(公告)号：US20190003052A1

公开(公告)日：2019-01-03

申请号：US15636307

申请日：2017-06-28

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Robert Brennan Milligan ,  William George Petro ,  Eric Wang ,  Fred Alokozai ,  Dong Li ,  Hao Wang ,  Melvin Verbaas ,  Luping Li

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/458 ,  C23C16/52 ,  C23C16/46

Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C. The method may include, providing at least one substrate on a substrate support within the reaction space and controlling a temperature of the at least one chamber wall at least at those portions of the at least one chamber wall that is exposed to a vapor phase reactant and controlling a temperature of a showerhead. The method may also include, alternatively and sequentially feeding at least two vapor phase reactants into the reaction space, wherein the temperature of the showerhead is controlled to a temperature between approximately 80° C. and approximately 160° C.

公开(公告)号：US20180158688A1

公开(公告)日：2018-06-07

申请号：US15795056

申请日：2017-10-26

Applicant: ASM IP Holding B.V.

Inventor： Jerry Peijun Chen ,  Fred Alokozai

IPC: H01L21/285 ,  H01L21/28 ,  H01L49/02 ,  H01L21/768 ,  H01L29/49 ,  H01L27/108 ,  H01L23/532

CPC classification number: H01L21/28568 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76849 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/90 ,  H01L29/4966

Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.

公开(公告)号：US20160376700A1

公开(公告)日：2016-12-29

申请号：US15262990

申请日：2016-09-12

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

IPC: C23C16/44

CPC classification number: C23C16/4405 ,  C23C16/32 ,  C23C16/4404 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76843

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

Abstract translation: 公开了一种用于处理沉积反应器的系统和方法。 该系统和方法去除或减轻用于沉积掺杂金属膜的气相反应器中的残余物的形成，例如掺铝的碳化钛膜或铝掺杂的碳化钽膜。 该方法包括将反应室暴露于缓和形成残留物形成物质的处理反应物的步骤。

公开(公告)号：US09412564B2

公开(公告)日：2016-08-09

申请号：US14659437

申请日：2015-03-16

Applicant: ASM IP Holding B.V.

Inventor： Robert Brennan Milligan ,  Fred Alokozai

IPC: H01L21/67 ,  C23C16/455 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/314 ,  C23C16/452

CPC classification number: H01J37/32357 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45514 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32651 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/3145 ,  H01L21/67017 ,  H01L21/67069

Abstract: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.

公开(公告)号：US09299595B2

公开(公告)日：2016-03-29

申请号：US14563044

申请日：2014-12-08

Applicant: ASM IP Holding B.V.

Inventor： Todd Dunn ,  Fred Alokozai ,  Jerry Winkler ,  Michael Halpin

IPC: F27D11/00 ,  H01L21/67 ,  H01L21/687 ,  F28D15/00

CPC classification number: H01L21/67103 ,  F28D15/00 ,  H01L21/67109 ,  H01L21/68714 ,  H01L21/68742

Abstract: A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.

公开(公告)号：US20150167159A1

公开(公告)日：2015-06-18

申请号：US14634342

申请日：2015-02-27

Applicant: ASM IP Holding B.V.

Inventor： Michael Halpin ,  Eric Shero ,  Carl White ,  Fred Alokozai ,  Jerry Winkler ,  Todd Dunn

IPC: C23C16/44

CPC classification number: C23C16/4409 ,  B01J8/0035 ,  B01J19/0073 ,  C23C16/4585 ,  H01L21/67126

Abstract: A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.

Abstract translation: 一种反应室，包括用于处理基板的上部区域，用于装载基板的下部区域，可在反应室内移动的基座，位于基座周边的第一密封构件，位于上部区域和 下部区域，其中第一和第二密封构件彼此选择性地接合以限制上部区域和下部区域之间的连通。

公开(公告)号：US11810788B2

公开(公告)日：2023-11-07

申请号：US16893206

申请日：2020-06-04

Applicant: ASM IP Holding B.V.

Inventor： Jerry Peijun Chen ,  Fred Alokozai

IPC: C23C16/34 ,  C23C16/455 ,  H01L21/285 ,  H01L21/28 ,  H01L49/02 ,  H01L23/532 ,  H01L21/768 ,  H01L29/49 ,  H10B12/00 ,  H01L21/02

CPC classification number: H01L21/28568 ,  C23C16/34 ,  C23C16/45531 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/02205 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76849 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266 ,  H01L28/60 ,  H01L28/90 ,  H01L28/91 ,  H01L29/4966 ,  H10B12/00 ,  H01L2924/01041 ,  H10B12/033

Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.

公开(公告)号：US10023960B2

公开(公告)日：2018-07-17

申请号：US15466149

申请日：2017-03-22

Applicant: ASM IP Holding B.V.

Inventor： Fred Alokozai ,  Robert Brennan Milligan

IPC: H01L21/461 ,  C23C16/505 ,  C23C16/455 ,  H01J37/32 ,  H01L21/02 ,  H01L21/285

CPC classification number: C23C16/505 ,  C23C16/452 ,  C23C16/45563 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3321 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  Y10T137/6851

Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.

公开(公告)号：US20170191164A1

公开(公告)日：2017-07-06

申请号：US15466149

申请日：2017-03-22

Applicant: ASM IP Holding B.V.

Inventor： Fred Alokozai ,  Robert Brennan Milligan

IPC: C23C16/505 ,  H01J37/32 ,  C23C16/455

CPC classification number: C23C16/505 ,  C23C16/452 ,  C23C16/45563 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3321 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  Y10T137/6851

Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.

公开(公告)号：US20160013024A1

公开(公告)日：2016-01-14

申请号：US14659437

申请日：2015-03-16

Applicant: ASM IP Holding B.V.

Inventor： Robert Brennan Milligan ,  Fred Alokozai

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32357 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45514 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32651 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/3145 ,  H01L21/67017 ,  H01L21/67069

Abstract: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.