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100 条记录 (耗时 0.031 秒)

    Image sensor and manufacturing method for the same
    23.
    发明授权
    Image sensor and manufacturing method for the same 失效
    图像传感器及其制造方法相同

    公开(公告)号：US5043567A

    公开(公告)日：1991-08-27

    申请号：US525734

    申请日：1990-05-21

    申请人： Mitsunori Sakama ,  Takeshi Fukada ,  Naoya Sakamoto ,  Nobumitsu Amachi ,  Shigenori Hayashi ,  Takashi Inushima

    发明人： Mitsunori Sakama ,  Takeshi Fukada ,  Naoya Sakamoto ,  Nobumitsu Amachi ,  Shigenori Hayashi ,  Takashi Inushima

    IPC分类号： G06K7/10 ,  H01L27/146 ,  H01L31/105 ,  H04N5/228 ,  H04N5/369

    CPC分类号： G06K7/10841 ,  H01L27/14643 ,  H01L31/1055 ,  H04N3/1581 ,  Y10S148/092

    摘要： A method of manufacturing image sensors where (a) a first conductive film of a transparent material is formed over and in contact with a transparent substrate; (b) a photosensitive semiconductor film is formed over and in contact with the film; (c) the first conductive film and the semiconductor film are patterned by laser scribing; (d) a first insulating film is formed over the above films and in contact with the first conductive film and the semiconductor film and portions thereof are removed which are not necessary to define the image sensors in the patterned semiconductor film; (e) a second conductive film is formed over the semiconductor film and the remaining portions of the first insulating film in order to make contact with the semiconductor film; (f) the second conductive film is patterned; (g) a second insulating film is formed over and in contact with the second conductive film; (h) the second insulating film is patterned; and (i) an electrode arrangement is formed for withdrawing electrical signals from the second conductive film through the patterned second insulating film, wherein the patternings of the first conductive film, the second conductive film, and the second insulating film are primarily performed by laser scribing to reduce the fabrication cost of the image sensors.

    Plasma CVD method
    27.
    发明授权
    Plasma CVD method 失效
    等离子体CVD法

    公开(公告)号：US07452829B2

    公开(公告)日：2008-11-18

    申请号：US11427377

    申请日：2006-06-29

    申请人： Shunpei Yamazaki ,  Masaaki Hiroki ,  Mitsunori Sakama

    发明人： Shunpei Yamazaki ,  Masaaki Hiroki ,  Mitsunori Sakama

    IPC分类号： H01L21/469 ,  H01L27/01

    CPC分类号： H01L21/02164 ,  C23C16/401 ,  C23C16/402 ,  C23C16/505 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L29/66757 ,  H01L29/78621

    摘要： In a process of forming a silicon oxide film 116 that constitutes an interlayer insulating film with TEOS as a raw material through the plasma CVD method, the RF output is oscillated at 50 W, and the RF output is gradually increased from 50 W to 250 W (an output value at the time of forming a film) after discharging (after the generation of O2-plasma). A TEOS gas is supplied to start the film formation simultaneously when the RF output becomes 250 W, or while the timing is shifted. As a result, because the RF power supply is oscillated at a low output when starting discharging, a voltage between the RF electrodes can be prevented from changing transitionally and largely.

    摘要翻译： 在通过等离子体CVD法形成以TEOS为原料的层间绝缘膜形成氧化硅膜116的过程中，RF输出以50W振荡，RF输出从50W逐渐升高到250W （在形成膜之后的输出值）（放电后（在产生O 2·2 - 等离子体）之后）。 当RF输出变为250W时，或当定时偏移时，提供TEOS气体同时开始成膜。 结果，由于在开始放电时RF电源以低输出振荡，因此可以防止RF电极之间的电压在很大程度上发生变化。

    Method of manufacturing a semiconductor device
    28.
    发明授权
    Method of manufacturing a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US07271082B2

    公开(公告)日：2007-09-18

    申请号：US10164019

    申请日：2002-06-07

    申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

    发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

    IPC分类号： H01L21/20

    CPC分类号： H01L21/02686 ,  C23C16/303 ,  C23C16/345 ,  C23C16/402 ,  C23C16/54 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/67155 ,  H01L21/67207 ,  H01L27/1281 ,  H01L29/41733 ,  Y10S438/905 ,  Y10S438/908

    摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.

    摘要翻译： 基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。 更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能， 所述处理室中的至少一个具有加热功能。 所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

    Insulating film formed using an organic silane and method of producing semiconductor device
    29.
    发明授权
    Insulating film formed using an organic silane and method of producing semiconductor device 有权
    使用有机硅烷形成的绝缘膜和制造半导体器件的方法

    公开(公告)号：US6025630A

    公开(公告)日：2000-02-15

    申请号：US190828

    申请日：1998-11-12

    申请人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Yukiko Uehara ,  Hiroshi Uehara

    发明人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Yukiko Uehara ,  Hiroshi Uehara

    IPC分类号： H01L21/316 ,  H01L27/01 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062

    CPC分类号： H01L21/02131 ,  H01L21/02126 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31629

    摘要： A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups (e.g., TEOS) and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing gas is added to the plasma CVD atmosphere, preferably in an amount of from 0.01 to 1 mol % of the atmosphere so as to reduce the alkali elements from the silicon oxide film formed and to improve the reliability of the film. Prior to forming the silicon oxide film, the silicon region may be treated in a plasma atmosphere containing oxygen and hydrogen chloride or a chlorine-containing hydrocarbon. The silicon oxide film is obtained at low temperatures and this has high reliability usable as a gate-insulating film in a semiconductor device.

    摘要翻译： 通过使用具有乙氧基（例如TEOS）和氧作为原料的有机硅烷等离子体CVD，形成氧化硅膜以覆盖岛状非单晶硅区域，而氯化氢或含氯烃（例如三氯乙烯） 的含氟气体添加到等离子体CVD气氛中，优选为0.01〜1摩尔％的气氛，以减少形成的氧化硅膜的碱元素，提高膜的可靠性。 在形成氧化硅膜之前，可以在含有氧和氯化氢或含氯烃的等离子体气氛中处理硅区域。 在低温下得到氧化硅膜，在半导体器件中作为栅极绝缘膜具有高的可靠性。