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30 条记录 (耗时 0.026 秒)

    Method and system for refurbishing a metal carbonyl precursor
    25.
    发明申请
    Method and system for refurbishing a metal carbonyl precursor 失效
    用于翻新金属羰基前体的方法和系统

    公开(公告)号：US20060224008A1

    公开(公告)日：2006-10-05

    申请号：US11095448

    申请日：2005-03-31

    申请人： Kenji Suzuki ,  Gerrit Leusink ,  Fenton McFeely

    发明人： Kenji Suzuki ,  Gerrit Leusink ,  Fenton McFeely

    IPC分类号： C07F15/00

    CPC分类号： C23C16/4481 ,  C23C16/4485 ,  C23C16/45593

    摘要： A method and system for refurbishing a metal carbonyl precursor. The method includes providing a metal precursor vaporization system containing a metal carbonyl precursor containing un-reacted and partially reacted metal carbonyl precursor, flowing a CO-containing gas through the metal precursor vaporization system to a precursor collection system in fluid communication with the metal precursor vaporization system to transfer the un-reacted metal carbonyl precursor vapor to the precursor collection system, and collecting the transferred metal carbonyl precursor in the precursor collection system. A method is provided for monitoring at least one metal carbonyl precursor parameter to determine a status of the metal carbonyl precursor and the need for refurbishing the metal carbonyl precursor.

    摘要翻译： 一种用于翻新金属羰基前体的方法和系统。 该方法包括提供含有含有未反应和部分反应的金属羰基前体的金属羰基前体的金属前体蒸发系统，其将含CO气体通过金属前体蒸发系统流动到与金属前体蒸发流体连通的前体收集系统 系统将未反应的金属羰基前体蒸气转移到前体收集系统中，并在前体收集系统中收集转移的金属羰基前体。 提供了一种用于监测至少一种金属羰基前体参数以确定羰基金属前体的状态以及需要翻新金属羰基前体的方法。

    Constant emissivity deposition member
    27.
    发明申请
    Constant emissivity deposition member 失效
    恒辐射率沉积元件

    公开(公告)号：US20050260833A1

    公开(公告)日：2005-11-24

    申请号：US10851384

    申请日：2004-05-22

    申请人： Fenton McFeely ,  John Yurkas ,  Sandra Malhotra ,  Andrew Simon

    发明人： Fenton McFeely ,  John Yurkas ,  Sandra Malhotra ,  Andrew Simon

    IPC分类号： C23C16/44 ,  C30B1/00 ,  C30B35/00 ,  H01L21/20 ,  H01L21/285 ,  H01L21/36 ,  H01L21/44

    CPC分类号： C23C16/4404 ,  C30B35/00 ,  H01L21/28556

    摘要： A deposition member adapted for discharging a deposition material during a deposition process can acquire a coating during the deposition. Such an initial emissivity value is selected for the deposition member, before any of the coating became deposited, that the emissivity of the deposition member remains substantially unchanged during the deposition process. In a representative embodiment the deposition member is coated with an appropriate thin layer for achieving the selected emissivity value.

    摘要翻译： 适于在沉积过程中排出沉积材料的沉积构件可以在沉积期间获得涂层。 在任何涂层沉积之前，沉积构件选择这种初始发射率值，沉积构件的发射率在沉积过程中保持基本不变。 在代表性的实施例中，沉积构件涂覆有适当的薄层以实现所选择的发射率值。

    Method of forming a tantalum-containing gate electrode structure
    28.
    发明申请
    Method of forming a tantalum-containing gate electrode structure 失效
    形成含钽栅电极结构的方法

    公开(公告)号：US20050227441A1

    公开(公告)日：2005-10-13

    申请号：US10830804

    申请日：2004-03-31

    申请人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  John Yurkas ,  Vijay Narayanan

    发明人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  John Yurkas ,  Vijay Narayanan

    IPC分类号： H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L21/336 ,  C30B1/00 ,  H01L21/20 ,  H01L21/3205 ,  H01L21/36 ,  H01L21/44 ,  H01L21/4763

    CPC分类号： H01L21/28088 ,  H01L21/28194 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/517

    摘要： A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH3)2)3(NC(C2H5)(CH3)2)) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.

    摘要翻译： 一种用于形成含钽栅电极结构的方法，其通过在处理室中提供其上具有高k电介质层的衬底，并在热化学气相沉积工艺中通过暴露在高k电介质层上形成含钽层 将衬底加工成含有TAIMATA（Ta（N（CH 3）2）3）（NC（C 2）2）的工艺气体， （CH 3）2））前体气体。 在本发明的一个实施方案中，含钽层可以包括由含有TAIMATA前体气体，含硅气体和任选的含氮气体的工艺气体形成的TaSiN层。 在本发明的另一实施例中，在TaSiN层上形成TaN层。 TaN层可以由含有TAIMATA前体气体和任选的含氮气体的工艺气体形成。 还提供了可由处理器执行以使处理系统执行该方法的计算机可读介质和用于形成含钽栅电极结构的处理系统。

    Low-pressure deposition of metal layers from metal-carbonyl precursors
    29.
    发明申请
    Low-pressure deposition of metal layers from metal-carbonyl precursors 有权
    金属 - 羰基前驱体金属层的低压沉积

    公开(公告)号：US20050070100A1

    公开(公告)日：2005-03-31

    申请号：US10673908

    申请日：2003-09-30

    申请人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

    发明人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

    IPC分类号： C23C16/16 ,  C23C16/44 ,  H01L21/285 ,  H01L21/44

    CPC分类号： C23C16/16 ,  H01L21/28556

    摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500° C., by utilizing a residence time less than about 120 msec.

    摘要翻译： 通过热化学气相沉积（TCVD）方法在金属层上沉积金属层的方法包括在处理室中引入含有羰基金属前驱体的工艺气体并在基底上沉积金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。 在本发明的一个实施方案中，金属羰基前体可以选自W（CO）6，Ni（CO）4，Mo（CO）6，Co 2（CO）8，Rh 4（CO）12，Re 2 （CO）10，Cr（CO）6和Ru 3（CO）12前体）。 在本发明的另一个实施例中，提供了一种通过利用小于约120毫秒的停留时间在低于约500℃的衬底温度下沉积低电阻W层的方法。