公开(公告)号：US20050221001A1

公开(公告)日：2005-10-06

申请号：US10814713

申请日：2004-03-31

申请人： Raymond Joe ,  John Gumpher ,  Anthony Dip

发明人： Raymond Joe ,  John Gumpher ,  Anthony Dip

IPC分类号： C23C16/34 ,  C23C16/44 ,  H01L21/318 ,  C23C16/00 ,  B32B9/00

CPC分类号： C23C16/4404 ,  H01L21/3185

摘要： A method for extending time between chamber cleaning processes in a process chamber of a processing system. A particle-reducing film is formed on a chamber component in the process chamber to reduce particle formation in the process chamber during substrate processing, at least one substrate is introduced into the process chamber, a manufacturing process is performed in the process chamber, and the at least one substrate is removed from the process chamber. The particle-reducing film may be deposited on a clean chamber component or on a material deposit formed on a chamber component. Alternatively, the particle-reducing film may be formed by chemically modifying at least a portion of a material deposit on a chamber component. The particle-reducing film may be formed after each manufacturing process or at selected intervals after multiple manufacturing processes.

摘要翻译： 一种用于在处理系统的处理室中延长室清洁过程之间的时间的方法。 在处理室中的腔室部件上形成颗粒减少膜，以减少衬底处理期间处理室中的颗粒形成，至少一个衬底被引入到处理室中，在处理室中执行制造工艺， 从处理室移除至少一个基板。 颗粒减少膜可以沉积在清洁室部件上或者形成在室部件上的材料沉积物上。 或者，可以通过化学改变室内部件上的材料沉积物的至少一部分来形成颗粒减少膜。 减少颗粒的膜可以在每个制造过程之后形成，或者在多个制造过程之后以选定的间隔形成。

公开(公告)号：US07604841B2

公开(公告)日：2009-10-20

申请号：US10814713

申请日：2004-03-31

申请人： Raymond Joe ,  John Gumpher ,  Anthony Dip

发明人： Raymond Joe ,  John Gumpher ,  Anthony Dip

IPC分类号： C23C16/30

CPC分类号： C23C16/4404 ,  H01L21/3185

摘要： A method for extending time between chamber cleaning processes in a process chamber of a processing system. A particle-reducing film is formed on a chamber component in the process chamber to reduce particle formation in the process chamber during substrate processing, at least one substrate is introduced into the process chamber, a manufacturing process is performed in the process chamber, and the at least one substrate is removed from the process chamber. The particle-reducing film may be deposited on a clean chamber component or on a material deposit formed on a chamber component. Alternatively, the particle-reducing film may be formed by chemically modifying at least a portion of a material deposit on a chamber component. The particle-reducing film may be formed after each manufacturing process or at selected intervals after multiple manufacturing processes.

摘要翻译： 一种用于在处理系统的处理室中延长室清洁过程之间的时间的方法。 在处理室中的腔室部件上形成颗粒减少膜，以减少衬底处理期间处理室中的颗粒形成，至少一个衬底被引入到处理室中，在处理室中执行制造工艺， 从处理室移除至少一个基板。 颗粒减少膜可以沉积在清洁室部件上或者形成在室部件上的材料沉积物上。 或者，可以通过化学改变室内部件上的材料沉积物的至少一部分来形成颗粒减少膜。 减少颗粒的膜可以在每个制造过程之后形成，或者在多个制造过程之后以选定的间隔形成。

公开(公告)号：US20070259534A1

公开(公告)日：2007-11-08

申请号：US11745278

申请日：2007-05-07

申请人： Kimberly G. Reid ,  Anthony Dip

发明人： Kimberly G. Reid ,  Anthony Dip

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/303 ,  C23C16/56

摘要： A method is provided for in-situ formation of a thin oxidized AlN film on a substrate. The method includes providing the substrate in a process chamber, depositing an AlN film on the substrate, and post-treating the AlN film with exposure to a nitrogen and oxygen-containing gas. The post-treating increases the dielectric constant of the AlN film with substantially no increase in the AlN film thickness. The method can also include pre-treating the substrate prior to AlN deposition, post-annealing the AlN film before or after the post-treatment, or both.

摘要翻译： 提供了一种在衬底上原位形成薄的氧化AlN膜的方法。 该方法包括在处理室中提供衬底，在衬底上沉积AlN膜，以及暴露于含氮和含氧气体后对AlN膜进行后处理。 后处理增加了AlN膜的介电常数，而AlN膜厚度基本上没有增加。 该方法还可以包括在AlN沉积之前预处理衬底，在后处理之前或之后对AlN膜进行后退火，或者两者。

公开(公告)号：US07235440B2

公开(公告)日：2007-06-26

申请号：US10630969

申请日：2003-07-31

申请人： David L O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

发明人： David L O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

IPC分类号： H01L21/8242

CPC分类号： H01L21/28194 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28167 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Ultra-thin oxide layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in SiO2 layers with a thickness of about 15 A, where the thickness of the SiO2 layers varies less than about 1 A over the substrates.

摘要翻译： 使用低压处理形成超薄氧化层，以实现衬底的自限制氧化并提供超薄氧化物。 待处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层，氮化物层，高k层，或者可以缺少初始介电层。 处理可以使用间歇式处理室进行，或者使用单晶圆处理室进行。 本发明的一个实施例提供了Si衬底的自限制氧化，其导致厚度为约15A的SiO 2层，其中SiO 2层的厚度 在基材上变化小于约1A。

公开(公告)号：US06869892B1

公开(公告)日：2005-03-22

申请号：US10767470

申请日：2004-01-30

申请人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki ,  David Paul Brunco ,  Steven Robert Soss ,  Anthony Dip

发明人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki ,  David Paul Brunco ,  Steven Robert Soss ,  Anthony Dip

IPC分类号： C23C8/10 ,  H01L21/316 ,  H01L21/31

CPC分类号： H01L21/02238 ,  C23C8/10 ,  H01L21/02255 ,  H01L21/31662

摘要： A method of oxidizing work pieces according to the present invention comprises the steps of: containing a plurality of work pieces W in a processing vessel 22 which has a predetermined length and is capable forming a vacuum therein, oxidizing surfaces of the work pieces in an atmosphere including active oxygen species and active hydroxyl species which are generated by supplying an oxidative gas and a reductive gas into the processing vessel to interact the gases. The oxidative gas and the reductive gas are respectively supplied into the processing vessel in the longitudinal direction. Parts of the reductive gas are additionally supplied from at least two or more independently controlled gas nozzles located at separate locations in the longitudinal direction of the processing vessel. The gas flow rate through each nozzle is set depending on any combination of the work pieces composed of product wafers, dummy wafers, and monitor wafers in the processing vessel.

摘要翻译： 根据本发明的氧化工件的方法包括以下步骤：在具有预定长度并且能够形成真空的处理容器22中容纳多个工件W，在工作气氛中氧化工件的表面 包括通过将氧化性气体和还原性气体供应到处理容器中以与气体相互作用而产生的活性氧和活性羟基。 氧化性气体和还原气体分别沿长度方向供给到处理容器内。 部分还原气体从位于处理容器的纵向方向上的分开位置的至少两个或多个独立控制的气体喷嘴另外供应。 通过每个喷嘴的气体流速根据由处理容器中的产品晶片，虚拟晶片和监视晶片组成的工件的任何组合来设定。

公开(公告)号：US20050048742A1

公开(公告)日：2005-03-03

申请号：US10647534

申请日：2003-08-26

申请人： Anthony Dip ,  Pradip Roy ,  Raymond Joe

发明人： Anthony Dip ,  Pradip Roy ,  Raymond Joe

IPC分类号： H01L21/28 ,  H01L21/306 ,  H01L21/302 ,  H01L21/322 ,  H01L21/461

CPC分类号： H01L21/28238 ,  H01L21/02049 ,  H01L21/02052 ,  H01L21/28255

摘要： This invention provides a method for modifying the surface properties of a Si or Si alloy substrate by performing repeated etch-grow cycles of thermal oxide to yield a more defect free substrate with a more uniform nucleating surface which provides an improved interface for dielectric formation. Additionally, this method of processing does not expose the substrate to ambient atmosphere and preserves the improved surface until subsequent processing steps are performed.

摘要翻译： 本发明提供了一种通过进行热氧化物的重复蚀刻生长循环来改善Si或Si合金衬底的表面性质的方法，以产生具有更均匀的成核表面的更无缺陷的衬底，其提供用于电介质形成的改进的界面。 此外，这种处理方法不会使衬底暴露于环境大气中并保留改进的表面，直到执行后续的处理步骤。

公开(公告)号：US08465591B2

公开(公告)日：2013-06-18

申请号：US12491313

申请日：2009-06-25

申请人： Hitoshi Kato ,  Manabu Honma ,  Anthony Dip

发明人： Hitoshi Kato ,  Manabu Honma ,  Anthony Dip

IPC分类号： C23C16/00

CPC分类号： C23C16/402 ,  C23C16/45521 ,  C23C16/45551

摘要： A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

公开(公告)号：US20110241085A1

公开(公告)日：2011-10-06

申请号：US12751891

申请日：2010-03-31

申请人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A. Conti

发明人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A. Conti

IPC分类号： H01L29/78 ,  H01L21/311

CPC分类号： H01L29/4983 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconducting device with a dual sidewall spacer and method of forming are provided. The method includes: depositing a first spacer layer over a patterned structure, the first spacer layer having a seam propagating through a thickness of the first spacer layer near an interface region of a surface of the substrate and a sidewall of the patterned structure, etching the first spacer layer to form a residual spacer at the interface region, where the residual spacer coats less than the entirety of the sidewall of the patterned structure, depositing a second spacer layer on the residual spacer and on the sidewall of the patterned structure not coated by the residual spacer, the second spacer layer being seam-free on the seam of the residual spacer, and etching the second spacer layer to form a second spacer coating the residual spacer and coating the sidewall of the patterned structure not coated by the residual spacer.

摘要翻译： 提供了具有双侧壁间隔件和成形方法的半导体器件。 该方法包括：在图案化结构上沉积第一间隔层，第一间隔层具有在衬底的表面的界面区附近传播穿过第一间隔层的厚度的接缝和图案化结构的侧壁，蚀刻 第一间隔层，以在界面区域处形成残留间隔物，其中残余间隔物涂覆小于图案化结构的侧壁的整体，在剩余间隔物上和在图案化结构的侧壁上沉积第二间隔层， 所述剩余间隔物，所述第二间隔层在所述残余间隔物的接缝上是无缝的，并且蚀刻所述第二间隔层以形成涂覆所述剩余间隔物并涂覆未被所述残留间隔物涂覆的所述图案化结构的侧壁的第二间隔物。

公开(公告)号：US07910494B2

公开(公告)日：2011-03-22

申请号：US11277814

申请日：2006-03-29

申请人： Anthony Dip ,  Eric J. Malstrom

发明人： Anthony Dip ,  Eric J. Malstrom

IPC分类号： H01L21/31 ,  C30B23/03

CPC分类号： H01L21/0214 ,  C30B25/14 ,  C30B31/16 ,  C30B35/00 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3145 ,  H01L21/324 ,  H01L21/67109 ,  Y10S438/935

摘要： A gas delivery system for supplying a process gas from a gas supply to a thermal processing furnace, a thermal processing furnace equipped with the gas delivery system, and methods for delivering process gas to a thermal processing furnace. The gas delivery system comprises a plurality of regulators, such as mass flow controllers, in a process gas manifold coupling a gas supply with a thermal processing furnace. The regulators establish a corresponding plurality of flows of a process gas at a plurality of flow rates communicated by the process gas manifold to the thermal processing furnace. The gas delivery system may be a component of the thermal processing furnace that further includes a liner that surrounds a processing space inside the thermal processing furnace.

摘要翻译： 一种用于将气体从气体供给到热处理炉的气体输送系统，配备有气体输送系统的热处理炉，以及将处理气体输送到热处理炉的方法。 气体输送系统包括多个调节器，例如质量流量控制器，其在将气体供应与热处理炉连接的工艺气体歧管中。 调节器以工艺气体歧管连接到热处理炉的多个流速建立相应的多个工艺气体流。 气体输送系统可以是热处理炉的组件，其还包括围绕热处理炉内的处理空间的衬套。

公开(公告)号：US20080035055A1

公开(公告)日：2008-02-14

申请号：US11463180

申请日：2006-08-08

申请人： Anthony Dip ,  Shinji Asari ,  Meenakshisundaram Gandhi

发明人： Anthony Dip ,  Shinji Asari ,  Meenakshisundaram Gandhi

IPC分类号： C23C16/00

CPC分类号： H01L21/67109 ,  C23C16/45578 ,  C23C16/45591 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67115

摘要： A thermal processing system with improved gas flow and method for injecting a process gas into a thermal processing system. The thermal processing system has an injection section with injection outlets that inject process gas into a processing space and a delivery section that delivers process gas to the injection section. The delivery section may be coupled with the injection section at an inlet disposed between opposite ends of the injection section. A fluid lumen of the injection section may have a larger cross-sectional area than a fluid lumen of the delivery section. The thermal processing system may include an inner tube, which surrounds the processing space, having a slit through which the processing space communicates with an annular pumping space defined between the inner tube and an outer tube of the thermal processing system.

摘要翻译： 具有改善气流的热处理系统和将工艺气体注入热处理系统的方法。 热处理系统具有注射部分，其具有将处理气体注入处理空间的注射出口和将处理气体输送到注射部分的输送部分。 输送部分可以在设置在喷射部分的相对端之间的入口处与喷射部分联接。 注射部分的流体腔可以具有比输送部的流体腔更大的横截面面积。 热处理系统可以包括围绕处理空间的内管，其具有狭缝，处理空间通过狭缝与限定在热处理系统的内管和外管之间的环形泵送空间连通。