公开(公告)号：US20220301883A1

公开(公告)日：2022-09-22

申请号：US17836694

申请日：2022-06-09

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Lisa J. Enman ,  Lakmal C. Kalutarage ,  Mark J. Saly

IPC: H01L21/311 ,  H01L21/02

Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include flowing a first reagent in a substrate processing region housing the semiconductor substrate. The first reagent may include HX. X may be at least one of fluorine, chlorine, and bromine. The semiconductor substrate may include an exposed region of gallium oxide. Fluorinating the exposed region of gallium oxide may form a gallium halide and H2O. The methods may include flowing a second reagent in the substrate processing region. The second reagent may be at least one of trimethylgallium, tin acetylacetonate, tetramethylsilane, and trimethyltin chloride. The second reagent may promote a ligand exchange where a methyl group may be transferred to the gallium halide to form a volatile Me2GaY or Me3Ga. Y may be at least one of fluorine, chlorine, and bromine from the second reagent. The methods may include recessing a surface of the gallium oxide.

公开(公告)号：US11450525B2

公开(公告)日：2022-09-20

申请号：US16131931

申请日：2018-09-14

Applicant: Applied Materials, Inc.

Inventor： Liqi Wu ,  Hung Nguyen ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Feng Q. Liu ,  David Thompson

IPC: H01L21/00 ,  H01L21/02 ,  C23C16/04 ,  C23C16/20

Abstract: Methods of depositing films are described. Specifically, methods of depositing metal oxide films are described. A metal oxide film is selectively deposited on a metal layer relative to a dielectric layer by exposing a substrate to an organometallic precursor followed by exposure to an oxidant.

公开(公告)号：US11293093B2

公开(公告)日：2022-04-05

申请号：US15863203

申请日：2018-01-05

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Feng Chen ,  Jeffrey W. Anthis ,  David Thompson ,  Mei Chang

IPC: C23C16/06 ,  C23C16/455 ,  C23C16/18 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768

Abstract: Processing methods comprising exposing a substrate to a first reactive gas comprising an ethylcyclopentadienyl ruthenium complex or a cyclohexadienyl ruthenium complex and a second reactive gas comprising water to form a ruthenium film are described.

公开(公告)号：US20210066592A1

公开(公告)日：2021-03-04

申请号：US17000457

申请日：2020-08-24

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Nasrin Kazem ,  Jeffrey W. Anthis ,  Ghazal Saheli ,  David Thompson

IPC: H01L45/00 ,  H01L27/24

Abstract: Methods of depositing a metal-organic oxide film by exposing a substrate surface to a metal-organic precursor and an oxidant are described. The metal-organic oxide film has the general formula MOxCy, wherein M comprises one or more of a transition metal, a lanthanide, or a boron group element, x is a whole number in a range of 1 to 6, and y is a number in a range of greater than 0 to 0.5.

公开(公告)号：US20210047726A1

公开(公告)日：2021-02-18

申请号：US16990303

申请日：2020-08-11

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Alexander Jansen ,  Mark Saly

IPC: C23C16/18 ,  H01L21/285 ,  H01L21/02 ,  C23C16/455

Abstract: A method of forming a molybdenum film by oxidation and reduction is disclosed. A molybdenum oxide film is formed by CVD or ALD using a halide free organometallic molybdenum precursor. The molybdenum oxide film contains low amounts of carbon impurities. The molybdenum oxide film is reduced to form a highly pure molybdenum film. The molybdenum film has low resistance and properties similar to bulk molybdenum.

公开(公告)号：US20180195167A1

公开(公告)日：2018-07-12

申请号：US15863203

申请日：2018-01-05

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Feng F. Chen ,  Jeffrey W. Anthis ,  David Thompson ,  Mei Chang

IPC: C23C16/06 ,  C23C16/455

CPC classification number: C23C16/06 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76838

Abstract: Processing methods comprising exposing a substrate to a first reactive gas comprising an ethylcyclopentadienyl ruthenium complex or a cyclohexadienyl ruthenium complex and a second reactive gas comprising water to form a ruthenium film are described.

公开(公告)号：US20180187304A1

公开(公告)日：2018-07-05

申请号：US15909352

申请日：2018-03-01

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Mei Chang ,  David Thompson

IPC: C23C16/18 ,  C23C16/455 ,  C23C16/02 ,  C23C16/04 ,  C23C16/458

Abstract: Methods of depositing a metal selectively onto a metal surface relative to a dielectric surface are described. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon and exposing the substrate to a metal precursor and an alcohol to deposit a film.

公开(公告)号：US09914995B2

公开(公告)日：2018-03-13

申请号：US14920001

申请日：2015-10-22

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Mei Chang ,  David Thompson

IPC: C23C16/18 ,  C23C16/02 ,  C23C16/455 ,  C23C16/04 ,  C23C16/458

CPC classification number: C23C16/18 ,  C23C16/0281 ,  C23C16/04 ,  C23C16/45534 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/4583 ,  H01L21/28562 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76883

Abstract: Methods of depositing a metal selectively onto a metal surface relative to a dielectric surface are described. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon and exposing the substrate to a metal precursor and an alcohol to deposit a film.

公开(公告)号：US09460959B1

公开(公告)日：2016-10-04

申请号：US14958459

申请日：2015-12-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin Xie ,  Feng Q. Liu ,  Daping Yao ,  Alexander Jansen ,  Joung Joo Lee ,  Adolph Miller Allen ,  Xianmin Tang ,  Mei Chang

IPC: B08B6/00 ,  H01L21/768 ,  B08B7/00 ,  B08B3/00 ,  B08B5/00 ,  B08B9/00 ,  B08B9/027

CPC classification number: H01L21/02068 ,  B08B3/00 ,  B08B3/106 ,  B08B5/00 ,  B08B7/0035 ,  B08B9/00 ,  B08B9/027 ,  C23G1/24 ,  F01D5/005 ,  F05D2230/90 ,  H01L21/02063 ,  H01L21/76814

Abstract: Methods for processing a substrate are provided herein. In some embodiments, method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface, an opposing second surface, and an opening formed in the first surface and extending towards the opposing second surface, and wherein the second surface comprises a conductive material disposed in the second surface and aligned with the opening; and exposing the substrate to a process gas comprising about 80 to about 100 wt % of an alcohol to reduce a contaminated surface of the conductive material.

Abstract translation: 本文提供了处理基板的方法。 在一些实施例中，处理衬底的方法包括：将设置在衬底处理室的处理体积内的衬底加热到​​高达约400摄氏度的温度，其中衬底包括第一表面，相对的第二表面和 开口形成在第一表面中并且朝向相对的第二表面延伸，并且其中第二表面包括设置在第二表面中并与开口对准的导电材料; 以及将基底暴露于包含约80至约100重量％的醇的工艺气体中以减少导电材料的污染表面。

公开(公告)号：US12272551B2

公开(公告)日：2025-04-08

申请号：US17824889

申请日：2022-05-25

Applicant: Applied Materials, Inc.

Inventor： Liqi Wu ,  Feng Q. Liu ,  Bhaskar Jyoti Bhuyan ,  James Hugh Connolly ,  Zhimin Qi ,  Jie Zhang ,  Wei Dou ,  Aixi Zhang ,  Mark Saly ,  Jiang Lu ,  Rongjun Wang ,  David Thompson ,  Xianmin Tang

IPC: H01L21/027 ,  C23C14/16 ,  H01L21/3213 ,  H01L21/768

Abstract: Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.