公开(公告)号：US09490366B2

公开(公告)日：2016-11-08

申请号：US14354204

申请日：2013-06-20

申请人： BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Changjiang Yan ,  Jun Long ,  Zongmin Tian ,  Zhenyu Xie ,  Xu Chen

IPC分类号： H01L29/786 ,  H01L27/146 ,  H01L29/66 ,  H01L27/12

CPC分类号： H01L29/78618 ,  H01L27/1225 ,  H01L27/14623 ,  H01L27/14663 ,  H01L29/66969 ,  H01L29/78693

摘要： A thin film transistor, an amorphous silicon flat detection substrate and a manufacturing method are provided. The material for a source electrode and a drain electrode of the thin film transistor is a conductor converted from the material for the amorphous metal oxide active layer by depositing an insulating substance containing hydrogen ions not less than a preset value, which reduces the valence band level difference between the source and the drain electrodes and the active layer, realizes good lattice matching and improves electricity characteristics of the thin film transistor.

摘要翻译： 提供薄膜晶体管，非晶硅平板检测基板和制造方法。 用于薄膜晶体管的源电极和漏电极的材料是通过沉积含有不低于预设值的氢离子的绝缘物质而从非晶金属氧化物有源层的材料转换的导体，其降低了价带水平 源电极和漏电极和有源层之间的差异实现了良好的晶格匹配并且改善了薄膜晶体管的电特性。

公开(公告)号：US09349760B2

公开(公告)日：2016-05-24

申请号：US14638478

申请日：2015-03-04

申请人： BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Xiang Liu ,  Zhenyu Xie ,  Xu Chen

IPC分类号： G02F1/1362 ,  H01L29/49 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1368 ,  H01L21/027 ,  H01L21/311

CPC分类号： H01L27/1288 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136236 ,  G02F2001/136295 ,  H01L21/0271 ,  H01L21/31111 ,  H01L21/31133 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78618

摘要： A thin film transistor liquid crystal display (TFT-LCD) array substrate comprises a gate line, a data line, a pixel electrode and a thin film transistor. The pixel electrode and the thin film transistor are formed in a pixel region defined by intersecting of the gate line and the data line, and the thin film transistor comprises a gate electrode, a semiconductor layer, a source electrode and a drain electrode. Two separate parts of the surface of the semiconductor layer are treated by a surface treatment to form into an ohmic contact layer, and the source electrode and the drain electrode are connected with the semiconductor layer through the ohmic contact layer in the two separate parts, respectively.

摘要翻译： 薄膜晶体管液晶显示器（TFT-LCD）阵列基板包括栅极线，数据线，像素电极和薄膜晶体管。 像素电极和薄膜晶体管形成在由栅极线和数据线相交所定义的像素区域中，薄膜晶体管包括栅电极，半导体层，源电极和漏电极。 半导体层的表面的两个分开的部分通过表面处理来形成欧姆接触层，并且源电极和漏极分别通过两个分开的部分中的欧姆接触层与半导体层连接 。

公开(公告)号：US20150179869A1

公开(公告)日：2015-06-25

申请号：US14357722

申请日：2013-08-23

申请人： BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Zhenyu Xie ,  Xu Chen ,  Shaoying Xu

IPC分类号： H01L31/18 ,  H01L31/0376 ,  H01L27/144

CPC分类号： H01L31/1804 ,  H01L27/1443 ,  H01L27/14603 ,  H01L27/14676 ,  H01L27/14687 ,  H01L27/14692 ,  H01L31/03762

摘要： An amorphous-silicon photoelectric device and a fabricating method thereof are disclosed. The amorphous-silicon photoelectric device includes: a substrate; a thin-film transistor and a photosensor with the photodiode structure, which are provided at different positions on the substrate; and a contact layer; in which the contact layer is located below the photosensor, and the contact layer is partially covered by the photosensor, moreover, the contact layer and the gate-electrode layer in the thin-film transistor are provided in a same layer and of a same material. According to the technical solutions of the present disclosure, the fabricating procedure of an a-Si photoelectric device can be simplified, thereby improving the fabrication efficiency and reducing costs.

摘要翻译： 公开了一种非晶硅光电器件及其制造方法。 非晶硅光电装置包括：基板; 薄膜晶体管和具有光电二极管结构的光电传感器，其设置在基板上的不同位置; 和接触层; 其中接触层位于光传感器下方，并且接触层被光电传感器部分地覆盖，此外，薄膜晶体管中的接触层和栅极电极层设置在同一层和相同的材料 。 根据本公开的技术方案，可以简化a-Si光电器件的制造过程，从而提高制造效率并降低成本。

公开(公告)号：US20150053967A1

公开(公告)日：2015-02-26

申请号：US14387390

申请日：2013-07-02

申请人： BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Changjiang Yan ,  Tiansheng Li ,  Shaoying Xu ,  Zhenyu Xie ,  Xu Chen

IPC分类号： H01L21/02 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC分类号： H01L21/02554 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02617 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78693

摘要： An Oxide TFT, a preparation method thereof, an array substrate and a display device are described. The method includes forming a gate electrode, a gate insulating layer, a channel layer, a barrier layer, as well as a source electrode and a drain electrode on a substrate; the channel layer is formed by depositing an amorphous oxide semiconductor film in a first mixed gas containing H2, Ar and O2. By depositing a channel layer in a first mixed gas containing H2, Ar and O2, the hysteresis phenomenon of the TFT can be mitigated effectively to improve the display quality of the display panel.

摘要翻译： 描述了氧化物TFT，其制备方法，阵列衬底和显示装置。 该方法包括在基板上形成栅电极，栅极绝缘层，沟道层，势垒层以及源电极和漏电极; 沟道层通过在含有H 2，Ar和O 2的第一混合气体中沉积无定形氧化物半导体膜而形成。 通过在包含H 2，Ar和O 2的第一混合气体中沉积沟道层，可以有效地减轻TFT的滞后现象，从而提高显示面板的显示质量。

公开(公告)号：US20150108672A1

公开(公告)日：2015-04-23

申请号：US14117208

申请日：2012-12-18

申请人： BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Chengtan Zhao ,  Tae Yup Min ,  Xu Chen ,  Hui Li ,  Weixin Meng ,  Lang Zhang

IPC分类号： B29C37/00 ,  H01L21/02

CPC分类号： B29C37/005 ,  B29L2007/00 ,  G02F1/13394 ,  G02F2201/503 ,  H01L21/02656

摘要： A device and a method for adjusting post-spacer height in production of liquid crystal displays (LCDs), and the device comprises a controller (11) and an extrusion panel (12), the controller (1) is configured to control the extrusion panel (12) to perform plastic deformation treatment; and the extrusion panel (12) is configured to perform plastic deformation treatment on post spacers on a substrate, of which a height is more than a predetermined height value, under the control of the controller (11) after a rubbing process and before a cell assembly process, so that the standard deviation of the post-spacer height on the substrate can fall in a range of the predetermined standard deviation required to be achieved by products. The device and the method can effectively improve the uniformity of the post-spacer height on the substrates.

摘要翻译： 一种用于调节液晶显示​​器（LCD）生产中的后隔间高度的装置和方法，并且该装置包括控制器（11）和挤出板（12），该控制器（1）构造成控制挤压板 （12）进行塑性变形处理; 并且所述挤出面板（12）被配置为在摩擦处理之后和在电池单元之前在控制器（11）的控制下对基板上的高度大于预定高度值的支柱间隔件进行塑性变形处理 组装过程，使得衬底上的后隔垫高度的标准偏差可以落在产品所需的预定标准偏差的范围内。 该装置和方法可以有效地提高基片上后隔垫高度的均匀性。

公开(公告)号：US08962371B2

公开(公告)日：2015-02-24

申请号：US14126490

申请日：2012-11-21

申请人： Beijing BOE Optoelectronics Technology Co., Ltd.

发明人： Shaoying Xu ,  Zhenyu Xie ,  Xu Chen

IPC分类号： H01L21/00 ,  H01L27/146

CPC分类号： H01L27/14692 ,  H01L27/14687 ,  H01L31/105

摘要： A method for fabricating a sensor, comprises: forming, on a base substrate, a pattern of a data line (31), a pattern of a drain electrode (34), a pattern of a source electrode (33), a pattern of a receive electrode (39), a pattern of a photodiode (40) and a pattern of a transparent electrode (41); forming a pattern of an ohmic layer by using a first patterning process; forming a pattern of an active layer by using a second patterning process; forming a pattern of a gate insulating layer by using a third patterning process; and forming a pattern of a gate line (30), a pattern of a gate electrode (38) and a pattern of a bias electrode (42) by using a fourth patterning process. Such a method can reduce the number of mask as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the defect-free rate.

摘要翻译： 一种用于制造传感器的方法，包括：在基底基板上形成数据线（31）的图案，漏电极（34）的图案，源电极（33）的图案， 接收电极（39），光电二极管（40）的图案和透明电极（41）的图案。 通过使用第一图案化工艺形成欧姆层的图案; 通过使用第二图案化工艺形成有源层的图案; 通过使用第三图案化工艺形成栅极绝缘层的图案; 以及通过使用第四图案化工艺形成栅极线（30）的图案，栅极（38）的图案和偏置电极（42）的图案。 这种方法可以减少掩模的数量和生产成本，并且简化了生产过程，从而显着提高了生产能力和无缺陷率。

公开(公告)号：US08900909B2

公开(公告)日：2014-12-02

申请号：US13704769

申请日：2012-11-08

申请人： Beijing Boe Optoelectronics Technology Co., Ltd.

发明人： Shaoying Xu ,  Zhenyu Xie ,  Xu Chen

IPC分类号： H01L21/00 ,  H01L27/146 ,  H01L31/18

CPC分类号： H01L31/18 ,  H01L27/14658 ,  H01L27/14692

摘要： An embodiment of the invention discloses a manufacture method of a sensor comprising: preparing gate scanning lines on a substrate; depositing a gate insulating layer on the gate scanning lines; sequentially depositing a gate insulation thin film, an active layer thin film, an ohmic contact layer thin film, a first conducting layer thin film and a photoelectric conversion layer thin film, and after the depositing, processing a lamination structure of the thin films with a gray-tone mask plate to obtain switch devices and photoelectric sensing devices; and then sequentially preparing a first passivation layer, bias lines and a second passivation layer.

摘要翻译： 本发明的实施例公开了一种传感器的制造方法，包括：在基板上准备栅极扫描线; 在栅极扫描线上沉积栅极绝缘层; 依次沉积栅极绝缘薄膜，有源层薄膜，欧姆接触层薄膜，第一导电层薄膜和光电转换层薄膜，并且在沉积之后，将薄膜的层叠结构用 灰色蒙版板获得开关器件和光电传感器件; 然后顺序地制备第一钝化层，偏置线和第二钝化层。

公开(公告)号：US09773938B2

公开(公告)日：2017-09-26

申请号：US13995424

申请日：2012-10-29

申请人： Beijing BOE Optoelectronics Technology Co., Ltd.

发明人： Shaoying Xu ,  Zhenyu Xie ,  Jian Guo ,  Xu Chen

IPC分类号： H01L21/84 ,  H01L31/18 ,  H01L31/105 ,  H01L27/146

CPC分类号： H01L31/18 ,  H01L27/1288 ,  H01L27/14603 ,  H01L27/14658 ,  H01L27/14692 ,  H01L31/1055

摘要： An embodiment of the present invention provides a manufacturing method of an amorphous-silicon flat-panel X-ray sensor; the method reduces the number of mask plates to be used, simplifies the production processes, saves production costs, while also improving the product yield. The manufacturing method comprises: on a substrate, after a gate scan line is formed, forming a data line, a TFT switch element and a photosensitive element through one patterning process, wherein on the mask plate used in the patterning process, a region corresponding to a channel of the TFT switch element is semi-transmissive, whereas regions respectively corresponding to the data line, the photosensitive element and the portion of the TFT switch element other than the channel thereof are non-transmissive; thereafter, on the substrate formed with the TFT switch element and the photosensitive element, a passivation layer and a bias line are formed.

公开(公告)号：US09312290B2

公开(公告)日：2016-04-12

申请号：US14128263

申请日：2012-11-23

申请人： BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Shaoying Xu ,  Zhenyu Xie ,  Xu Chen

IPC分类号： H01L31/0352 ,  H01L21/00 ,  H01L27/146 ,  H01L29/04 ,  G02F1/1343 ,  G01T1/24 ,  H01L31/0224

CPC分类号： H01L27/14612 ,  H01L27/14603 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14658 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/022466 ,  H01L31/0352

摘要： A sensor and its fabrication method are provided, wherein the sensor includes: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a TFT device and a photodiode sensing device, wherein the TFT device is a top gate TFT. The photodiode sensing device includes: a receiving electrode connected with a source electrode, a photodiode disposed on the receiving electrode, a transparent electrode disposed on the photodiode, and a bias line disposed on and connected with the transparent electrode, the bias line is disposed as parallel to the gate line. In comparison with the conventional technology, the method for fabricating the sensor of the invention reduces the number of mask as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the defect free rate.

摘要翻译： 提供了一种传感器及其制造方法，其中传感器包括：基底基板，一组栅极线和一组布置成彼此交叉的数据线;以及多个感测元件，其被排列成阵列并由该组 的栅极线和数据线组，每个感测元件包括TFT器件和光电二极管感测器件，其中TFT器件是顶栅极TFT。 光电二极管检测装置包括：与源电极连接的接收电极，设置在接收电极上的光电二极管，设置在光电二极管上的透明电极，以及设置在透明电极上并与透明电极连接的偏置线，偏置线设置为 平行于栅极线。 与传统技术相比，本发明的传感器的制造方法减少了掩模的数量和生产成本，并简化了生产过程，从而显着提高了生产能力和无缺陷率。

公开(公告)号：US20150008435A1

公开(公告)日：2015-01-08

申请号：US14125444

申请日：2012-11-23

申请人： Beijing BOE Optoelectronics Technology Co., Ltd.

发明人： Shaoying Xu ,  Zhenyu Xie ,  Xu Chen

IPC分类号： H01L31/0352 ,  H01L23/48 ,  H01L31/18 ,  H01L31/0232

CPC分类号： H01L31/0352 ,  H01L23/481 ,  H01L27/1461 ,  H01L27/14692 ,  H01L31/02325 ,  H01L31/18 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention disclose a sensor and its fabrication method, the sensor comprises: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a TFT device and a photodiode sensing device, wherein the TFT device is a bottom gate TFT; the photodiode sensing device comprises: a receiving electrode connected with a source electrode, a photodiode disposed on the receiving electrode, a transparent electrode disposed on the photodiode, and a bias line disposed on and connected with the transparent electrode, the bias line is disposed as parallel to the gate line.

摘要翻译： 本发明的实施例公开了一种传感器及其制造方法，该传感器包括：基底基板，一组栅极线和一组布置为彼此交叉的数据线，多个感测元件排列成阵列并由 组栅极线和数据线组，每个感测元件包括TFT器件和光电二极管感测器件，其中TFT器件是底栅TFT; 所述光电二极管检测装置包括：与源极连接的接收电极，设置在所述接收电极上的光电二极管，设置在所述光电二极管上的透明电极，以及设置在所述透明电极上并与所述透明电极连接的偏置线，所述偏置线设置为 平行于栅极线。