公开(公告)号：US06642105B2

公开(公告)日：2003-11-04

申请号：US10131010

申请日：2002-04-24

申请人： Kyung-Hyun Kim ,  Chang-Ki Hong ,  U-In Chung ,  Bum-Soo Kim ,  Yoo-Cheol Shin ,  Kyu-Chan Park

发明人： Kyung-Hyun Kim ,  Chang-Ki Hong ,  U-In Chung ,  Bum-Soo Kim ,  Yoo-Cheol Shin ,  Kyu-Chan Park

IPC分类号： H01L21336

CPC分类号： H01L21/823462 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11541

摘要： A semiconductor device having multi-gate insulating layers and methods of fabricating the same are provided. The semiconductor device includes an isolation region disposed at a predetermined region of a semiconductor substrate. The isolation region defines at least one first active region and at least one second active region. The first active region is covered with a first gate insulating layer, and the second active region is covered with a second gate insulating layer which is thinner than the first gate insulating layer. Preferably, the top surface of the first gate insulating layer has the same height as the that of the second gate insulating layer. The isolation region is filled with an isolation layer which preferably covers the entire sidewalls of the first and second gate insulating layers. A typical method includes the step of selectively forming a first gate insulating layer at a predetermined region of a semiconductor substrate. A second gate insulating layer which is thinner than the first insulating layer is selectively formed at the surface of the semiconductor substrate adjacent to the first gate insulating layer. Preferably, the bottom surface of the first gate insulating layer is lower than that of the second gate insulating layer. The first and second gate insulating layers are covered with a conductive layer. The conductive layer, the first and second gate insulating layers, and the substrate are etched to form an isolation region, for example, a trench region, defining a first active region under the first gate insulating layer and a second active region under the second gate insulating. An isolation layer is formed in the trench region. The isolation layer preferably covers the entire sidewalls of the first and second gate insulating layers.

公开(公告)号：US09070448B2

公开(公告)日：2015-06-30

申请号：US14334984

申请日：2014-07-18

申请人： Jae-Ho Min ,  O-lk Kwon ,  Bum-Soo Kim ,  Dong-Chan Kim ,  Myeong-Cheol Kim

发明人： Jae-Ho Min ,  O-lk Kwon ,  Bum-Soo Kim ,  Dong-Chan Kim ,  Myeong-Cheol Kim

IPC分类号： H01L29/76 ,  H01L23/48 ,  G11C16/04 ,  H01L21/033 ,  H01L21/308 ,  H01L21/3213 ,  H01L27/115 ,  G11C5/06 ,  H01L27/02

CPC分类号： G11C16/0483 ,  G11C5/06 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32139 ,  H01L27/0207 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/11531 ,  H01L27/11548 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575

摘要： Methods of forming a semiconductor device may include providing a feature layer having a first region and a second region. The methods may also include forming a dual mask layer on the feature layer. The methods may further include forming a variable mask layer on the dual mask layer. The methods may additionally include forming a first structure on the feature layer in the first region and a second structure on the feature layer in the second region by patterning the variable mask layer and the dual mask layer. The methods may also include forming a first spacer on a sidewall of the first structure and a second spacer on a sidewall of the second structure. The methods may further include removing the first structure while maintaining at least a portion of the second structure.

摘要翻译： 形成半导体器件的方法可以包括提供具有第一区域和第二区域的特征层。 所述方法还可以包括在特征层上形成双掩模层。 所述方法还可以包括在双掩模层上形成可变掩模层。 所述方法还可以包括通过对可变掩模层和双掩模层进行构图来在第一区域中的特征层上形成第一结构和在第二区域中的特征层上形成第二结构。 所述方法还可以包括在第一结构的侧壁上形成第一间隔物，在第二结构的侧壁上形成第二间隔物。 所述方法还可以包括在保持第二结构的至少一部分的同时移除第一结构。

公开(公告)号：US20140328125A1

公开(公告)日：2014-11-06

申请号：US14334984

申请日：2014-07-18

申请人： Jae-Ho Min ,  O-lk Kwon ,  Bum-Soo Kim ,  Dong-Chan Kim ,  Myeong-Cheol Kim

发明人： Jae-Ho Min ,  O-lk Kwon ,  Bum-Soo Kim ,  Dong-Chan Kim ,  Myeong-Cheol Kim

IPC分类号： G11C16/04 ,  G11C5/06

CPC分类号： G11C16/0483 ,  G11C5/06 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32139 ,  H01L27/0207 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/11531 ,  H01L27/11548 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575

摘要： Methods of forming a semiconductor device may include providing a feature layer having a first region and a second region. The methods may also include forming a dual mask layer on the feature layer. The methods may further include forming a variable mask layer on the dual mask layer. The methods may additionally include forming a first structure on the feature layer in the first region and a second structure on the feature layer in the second region by patterning the variable mask layer and the dual mask layer. The methods may also include forming a first spacer on a sidewall of the first structure and a second spacer on a sidewall of the second structure. The methods may further include removing the first structure while maintaining at least a portion of the second structure.

摘要翻译： 形成半导体器件的方法可以包括提供具有第一区域和第二区域的特征层。 所述方法还可以包括在特征层上形成双掩模层。 所述方法还可以包括在双掩模层上形成可变掩模层。 所述方法还可以包括通过对可变掩模层和双掩模层进行构图来在第一区域中的特征层上形成第一结构和在第二区域中的特征层上形成第二结构。 所述方法还可以包括在第一结构的侧壁上形成第一间隔物，在第二结构的侧壁上形成第二间隔物。 所述方法还可以包括在保持第二结构的至少一部分的同时移除第一结构。

公开(公告)号：US08637407B2

公开(公告)日：2014-01-28

申请号：US13242504

申请日：2011-09-23

申请人： Jae-Ho Min ,  O-Ik Kwon ,  Bum-Soo Kim ,  Dong-chan Kim ,  Myeong-cheol Kim

发明人： Jae-Ho Min ,  O-Ik Kwon ,  Bum-Soo Kim ,  Dong-chan Kim ,  Myeong-cheol Kim

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： G11C16/0483 ,  G11C5/06 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32139 ,  H01L27/0207 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/11531 ,  H01L27/11548 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575

摘要： Methods of forming a semiconductor device may include providing a feature layer having a first region and a second region. The methods may also include forming a dual mask layer on the feature layer. The methods may further include forming a variable mask layer on the dual mask layer. The methods may additionally include forming a first structure on the feature layer in the first region and a second structure on the feature layer in the second region by patterning the variable mask layer and the dual mask layer. The methods may also include forming a first spacer on a sidewall of the first structure and a second spacer on a sidewall of the second structure. The methods may further include removing the first structure while maintaining at least a portion of the second structure.

公开(公告)号：USRE44052E1

公开(公告)日：2013-03-05

申请号：US11848005

申请日：2007-08-30

申请人： Bum-Soo Kim ,  Gui-Yong Lee ,  Jong-Min Kim ,  Ji-hyun In ,  Jesung Kim ,  Sam-hyuk Noh ,  Sang-Iyul Min ,  Dong-hee Lee ,  Jae-yong Jeong ,  Yoo-kun Cho ,  Jong-moo Choi

发明人： Bum-Soo Kim ,  Gui-Yong Lee ,  Jong-Min Kim ,  Ji-hyun In ,  Jesung Kim ,  Sam-hyuk Noh ,  Sang-Iyul Min ,  Dong-hee Lee ,  Jae-yong Jeong ,  Yoo-kun Cho ,  Jong-moo Choi

IPC分类号： G06F12/00

CPC分类号： G06F12/0246 ,  G06F3/0679 ,  G06F13/4239 ,  G06F2212/2022 ,  G06F2212/7203

摘要： A flash memory management method is provided. According to the method, when a request to write the predetermined data to a page to which data has been written is made, the predetermined data is written to a log block corresponding to a data block containing the page. When a request to write the predetermined data to the page again is received, the predetermined data is written to an empty free page in the log block. Even if the same page is requested to be continuously written to, the management method allows this to be processed in one log block, thereby improving the effectiveness in the use of flash memory resources.

公开(公告)号：US20110239937A1

公开(公告)日：2011-10-06

申请号：US13053870

申请日：2011-03-22

申请人： Yohan Ahn ,  Jinho Kim ,  Bum-Soo Kim

发明人： Yohan Ahn ,  Jinho Kim ,  Bum-Soo Kim

IPC分类号： B05C9/08 ,  B05C9/14 ,  B05C11/00 ,  B05C13/00 ,  F28F7/00

CPC分类号： H01L21/67757 ,  C23C16/4401 ,  C23C16/54 ,  H01L21/67109 ,  H01L21/67201

摘要： A substrate treating apparatus and method include a load lock chamber providing a space where a process is performed. While a boat supporting the substrate is positioned in the load lock chamber, a cooling member cools an inside of the load lock chamber at different temperatures according to area or region in a vertical direction of the load lock chamber.

摘要翻译： 基板处理装置和方法包括提供执行处理的空间的装载锁定室。 当支撑基板的船舶位于负载锁定室中时，冷却部件根据负载锁定室的垂直方向上的区域或区域在不同的温度下冷却负载锁定室的内部。

公开(公告)号：US20090197036A1

公开(公告)日：2009-08-06

申请号：US11628527

申请日：2006-07-25

申请人： Sung-chul Hwang ,  Jae-Wan Sung ,  Seung-Baik Nam ,  Seung-Hun Lee ,  Jong-Bum Kim ,  Bum-Soo Kim

发明人： Sung-chul Hwang ,  Jae-Wan Sung ,  Seung-Baik Nam ,  Seung-Hun Lee ,  Jong-Bum Kim ,  Bum-Soo Kim

IPC分类号： B32B3/06 ,  B32B27/40 ,  B32B38/04 ,  B32B21/08 ,  B32B21/04 ,  B32B37/12

CPC分类号： B32B21/14 ,  B32B3/06 ,  B32B7/02 ,  B32B7/12 ,  B32B21/02 ,  B32B21/042 ,  B32B21/13 ,  B32B2250/40 ,  B32B2255/08 ,  B32B2255/26 ,  B32B2307/584 ,  B32B2307/734 ,  B32B2419/04 ,  E04F15/02 ,  Y10T156/10 ,  Y10T156/1052 ,  Y10T428/24008 ,  Y10T428/31511 ,  Y10T428/31591 ,  Y10T428/31783 ,  Y10T428/3179 ,  Y10T428/31906 ,  Y10T428/31989

摘要： Disclosed is a wood flooring containing laminated wood and high-density fiberboard using a symmetric structure and a process for manufacturing the same. The wood flooring includes a high-density fiberboard core layer and an upper laminated wood layer and lower laminated wood or veneer layer symmetrically stacked about the high-density fiberboard core layer to achieve a stable structure, and the lower laminated wood or veneer layer has a density of 100±30% of that of the upper laminated wood layer to keep the balance therebetween. With this configuration it is possible to completely eliminate deformation problems caused by variation of environmental conditions such as temperature, humidity, etc., and to impart the natural texture of raw lumber and high durability to the flooring surface.

摘要翻译： 公开了一种含有层叠木材和使用对称结构的高密度纤维板的木地板及其制造方法。 木地板包括高密度纤维板芯层和上部层压木材层以及围绕高密度纤维板芯层对称地堆叠的下层叠木材或单板层以实现稳定的结构，并且下部层压木材或单板层具有 密度为上层压木质层的100±30％，以保持它们之间的平衡。 通过这种结构，能够完全消除由诸如温度，湿度等的环境条件的变化引起的变形问题，并赋予原木的自然纹理和对地板表面的高耐久性。

公开(公告)号：US07509522B2

公开(公告)日：2009-03-24

申请号：US11282748

申请日：2005-11-21

申请人： Moon-sang Kwon ,  Bum-Soo Kim ,  Young-joon Choi

发明人： Moon-sang Kwon ,  Bum-Soo Kim ,  Young-joon Choi

IPC分类号： G06F11/00

CPC分类号： G06F11/1435 ,  G06F11/1441

摘要： Provided are a portable storage device and a method of data recovery using the same, in which when the integrity of the recorded data is damaged, the integrity of the recorded data can be easily recovered. The portable storage device includes a memory unit that stores predetermined recovery information for the recorded data, a determining unit that determines whether a device that accesses the recorded data supports the stored recovery information, and a control unit that selectively recovers the recorded data using the stored recovery information based on a result of the determination.

摘要翻译： 提供了一种便携式存储装置和使用该便携式存储装置的数据恢复方法，其中当记录数据的完整性被损坏时，可以容易地恢复记录数据的完整性。 便携式存储装置包括：存储单元，存储用于记录数据的预定恢复信息;确定单元，确定访问所记录数据的设备是否支持所存储的恢复信息;以及控制单元，其使用所存储的恢复信息选择性地恢复记录数据 基于确定结果的恢复信息。

公开(公告)号：US07483228B2

公开(公告)日：2009-01-27

申请号：US11316896

申请日：2005-12-27

申请人： Dong-Hyun Song ,  Young-Joon Choi ,  Bum-Soo Kim ,  Myung-Jin Jung

发明人： Dong-Hyun Song ,  Young-Joon Choi ,  Bum-Soo Kim ,  Myung-Jin Jung

IPC分类号： G11B27/36 ,  G06F12/00

CPC分类号： G11B20/10527 ,  G06F3/0625 ,  G06F3/0656 ,  G06F3/0679 ,  G11B2020/10685 ,  G11B2020/1285 ,  Y02D10/154

摘要： A hard disk drive is disclosed and related methods of reading/writing data are disclosed. The hard disk drive includes a disk serving as a main data storage medium, and first and second buffers storing data to be stored on the disk, as well as a controller defining a data I/O path in relation to a detected operating state of the hard disk drive.

摘要翻译： 公开了一种硬盘驱动器，并且公开了读/写数据的相关方法。 硬盘驱动器包括用作主数据存储介质的磁盘，以及存储要存储在磁盘上的数据的第一和第二缓冲器，以及定义关于检测到的操作状态的数据I / O路径的控制器 硬盘驱动器。

公开(公告)号：US20070070181A1

公开(公告)日：2007-03-29

申请号：US11481060

申请日：2006-07-06

申请人： Hye-Won Oh ,  Chang-Taek Kang ,  Soon-Jin Kim ,  Yun-Hyang Kim ,  Bum-Soo Kim

发明人： Hye-Won Oh ,  Chang-Taek Kang ,  Soon-Jin Kim ,  Yun-Hyang Kim ,  Bum-Soo Kim

IPC分类号： H04N7/14

CPC分类号： G06T11/00

摘要： A method and apparatus for controlling an image in a wireless terminal transmitting/receiving a facial expression photograph in a message transmission/reception mode and a video call mode are provided. If a facial expression photograph attachment option is selected in a message transmission mode, facial expression types are displayed. A facial expression of a photograph to be transmitted is changed to a facial expression selected from the facial expression types, and the selected facial expression is attached as a facial expression photograph. A message attached to the facial expression photograph is then transmitted.

摘要翻译： 提供一种用于控制在消息发送/接收模式和视频呼叫模式中发送/接收面部表情照片的无线终端中的图像的方法和装置。 如果在消息传输模式中选择了面部表情照片附件选项，则显示面部表情类型。 要发送的照片的面部表情被改变为从面部表情类型中选择的面部表情，并且所选择的面部表情作为面部表情照片被附加。 然后传送附加到面部表情照片的消息。