摘要:
Interposers for semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, an interposer includes a substrate, a contact pad disposed on the substrate, and a first through-via in the substrate coupled to the contact pad. A first fuse is coupled to the first through-via. A second through-via in the substrate is coupled to the contact pad, and a second fuse is coupled to the second through-via.
摘要:
A system for power management electrically connected to a solar cell is provided. The system for power management includes a photo-sensor, a controller electrically connected to the photo-sensor, and a power manager. The photo-sensor detects an illumination (illuminance or irradiance) of an environment where the solar cell is located. A look-up table of illumination vs. maximum output power is built in the controller, wherein a corresponding maximum output power is determined by the controller according to the illumination detected by the photo-sensor. The power manager is electrically connected to the controller and the solar cell. The power manager controls the output current of the solar cell so as to equalize an output power of solar cell and the corresponding maximum output power. A method for power management is also provided.
摘要:
A vertical transmission structure for high frequency transmission lines includes a conductive axial core and a conductive structure surrounding the conductive axial core. The vertical transmission structure is applied to a high-frequency flip chip package for reducing the possibility of underfill from coming in contact with the conductive axial core.
摘要:
The present invention relates to an integrated structure for a MEMS device and a semiconductor device and a method of fabricating the same, in which an etch stopping device is included on a substrate between the MEMS device and the semiconductor device for protecting the semiconductor device from lateral damage when an oxide releasing process is performed to fabricate the MEMS device. The etch stopping device has various profiles and is selectively formed by an individual fabricating process or is simultaneously formed with the semiconductor device in the same fabricating process. It is a singular structure or a combined stacked multilayered structure, for example, a plurality of rows of pillared etch-resistant material plugs, one or a plurality of wall-shaped etch-resistant material plugs, or a multilayered structure of a stack of which and an etch-resistant material layer.
摘要:
A 3D-IC detector for each layer of a stacked device comprises a pulse generator to receive an initial signal and generate a pulse-in signal to a next stage detector. A latch is coupled to the pulse generator to receive an output signal from the pulse generator and generate a layer identifying signal. A counter is coupled to previous stage detector and the initial signal to perform a counting operation; and an adder coupled to the counter to add a number to a counting output from the counter and input added signal to the pulse generator.
摘要:
The present invention discloses a control scheme for 3D memory IC that includes a master chip and at least one slave chip. The master chip includes a main memory core, a first local timer, an I/O buffer, a first pad and a second pad. The at least one slave chip is stacked with the master chip. Each of the slave chip includes a slave memory core, a second local timer and a third pad. A first TSV is coupled to the first pad and the third pad. A logic control circuit layer includes a logic control circuit and a fourth pad, and the logic control circuit is coupled to the fourth pad. A second TSV is coupled to the second pad and the fourth pad.
摘要:
A MEMS device includes a vent hole structure and a MEMS structure disposed on a same side of a substrate. The vent hole structure adjoins the MEMS structure with an etch stop structure therebetween. The MEMS structure includes a chamber, the vent hole structure includes a metal layer having at least a hole thereon as a vent hole to connect the chamber of the MEMS structure through the etch stop structure. Accordingly, the MEMS device has a lateral vent hole. Furthermore, as the vent hole structure and the MEMS structure are disposed on the same side of the substrate, the manufacturing process is convenient and timesaving.
摘要:
A vertical transmission structure for high frequency transmission lines includes a conductive axial core and a conductive structure surrounding the conductive axial core. The vertical transmission structure is applied to a high-frequency flip chip package for reducing the possibility of underfill from coming in contact with the conductive axial core.
摘要:
A power tracking device and a power tracking method is disclosed herein. The power tracking device includes a power voltage setting circuit, a switch, a switching signal circuit, and a voltage memory circuit. The switching signal circuit is configured for sending a first control signal to the switch. When the switch receives the first control signal and electrically isolates the power source and the power voltage setting circuit, the voltage memory circuit stores an open circuit voltage of the power source and sends a setting voltage relative to the open circuit voltage, and when the switch receives the first control signal and electrically connects the power source and the power voltage setting circuit, the power voltage setting circuit sets an output voltage of the power source to correspond with the setting voltage.
摘要:
A power tracking device and a power tracking method is disclosed herein. The power tracking device includes a power voltage setting circuit, a switch, a switching signal circuit, and a voltage memory circuit. The switching signal circuit is configured for sending a first control signal to the switch. When the switch receives the first control signal and electrically isolates the power source and the power voltage setting circuit, the voltage memory circuit stores an open circuit voltage of the power source and sends a setting voltage relative to the open circuit voltage, and when the switch receives the first control signal and electrically connects the power source and the power voltage setting circuit, the power voltage setting circuit sets an output voltage of the power source to correspond with the setting voltage.