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114 条记录 (耗时 0.022 秒)

    Method of forming silicon oxide containing films
    21.
    发明授权
    Method of forming silicon oxide containing films 有权
    形成含氧化硅膜的方法

    公开(公告)号：US08613976B2

    公开(公告)日：2013-12-24

    申请号：US13547876

    申请日：2012-07-12

    申请人： Christian Dussarrat ,  Ikuo Suzuki ,  Kazutaka Yanagita ,  Julien Gatineau ,  Eri Tsukada

    发明人： Christian Dussarrat ,  Ikuo Suzuki ,  Kazutaka Yanagita ,  Julien Gatineau ,  Eri Tsukada

    IPC分类号： C23C16/40 ,  C23C16/455

    CPC分类号： H01L21/02164 ,  C23C16/402 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/31612

    摘要： A method of forming a silicon oxide film, comprising the steps of: providing a substrate into a reaction chamber; injecting into the reaction chamber at least one silicon containing compound where the at least one silicon containing compound is bis(diethylamino)silane; injecting Oxygen into the reaction chamber and at least one other O-containing gas selected from ozone and water; reacting in the reaction chamber by chemical vapor deposition at a temperature below 400 C the at least one silicon containing compound and the at least one oxygen containing gas in order to obtain the silicon oxide film deposited onto the substrate.

    摘要翻译： 一种形成氧化硅膜的方法，包括以下步骤：将基底提供到反应室中; 向所述反应室中注入至少一种含硅化合物，其中所述至少一种含硅化合物是双（二乙基氨基）硅烷; 将氧气注入反应室和至少一种其它选自臭氧和水的含O气体; 在反应室内通过化学气相沉积在低于400℃的温度下使至少一种含硅化合物和至少一种含氧气体反应，以获得沉积在基底上的氧化硅膜。

    METHOD OF FORMING SILICON OXIDE CONTAINING FILMS
    22.
    发明申请
    METHOD OF FORMING SILICON OXIDE CONTAINING FILMS 有权
    形成含氧化硅膜的方法

    公开(公告)号：US20090232985A1

    公开(公告)日：2009-09-17

    申请号：US11908707

    申请日：2006-03-17

    申请人： Christian Dussarrat ,  Julien Gatineau ,  Kazutaka Yanagita ,  Eri Tsukada ,  Ikuo Suzuki

    发明人： Christian Dussarrat ,  Julien Gatineau ,  Kazutaka Yanagita ,  Eri Tsukada ,  Ikuo Suzuki

    IPC分类号： C23C16/40 ,  C23C16/455

    CPC分类号： H01L21/02164 ,  C23C16/402 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/31612

    摘要： A method of forming a silicon oxide film, comprising the steps of: —providing a treatment substrate within a reaction chamber; —purging the gas within the reaction chamber by feeding an inert gas into the chamber under reduced pressure at a substrate temperature of 50 to 4000 C, —adsorbing, at the same temperatures and under reduced pressure, a silicon compound on the treatment substrate by pulsewise introduction of a gaseous silicon compound into the reaction chamber, —purging, at the same temperatures and under reduced pressure, the unadsorbed silicon compound in the reaction chamber with an inert gas, —at the same temperatures and under reduced pressure, introducing a pulse of ozone-containing mixed gas into the reaction chamber and producing silicon oxide by an oxidation reaction with the silicon compound adsorbed on the treatment substrate; and—repeating steps 1) to 4) if necessary to obtain the desired thickness on the substrate.

    摘要翻译： 一种形成氧化硅膜的方法，包括以下步骤： - 在反应室内提供处理衬底; 通过在50至4000℃的基板温度下在减压下将惰性气体进料到反应室中，在相同的温度和减压下，通过脉冲式在处理基板上吸收硅化合物 将气态硅化合物引入反应室中，在相同的温度和减压下，用惰性气体在相同的温度和减压下，将反应室中的未吸附的硅化合物， 含臭氧的混合气体进入反应室，并与吸附在处理基板上的硅化合物进行氧化反应而生成氧化硅; 并重复步骤1）至4），如果需要在基底上获得所需的厚度。

    Method of forming silicon oxide containing films
    23.
    发明授权
    Method of forming silicon oxide containing films 有权
    形成含氧化硅膜的方法

    公开(公告)号：US08227032B2

    公开(公告)日：2012-07-24

    申请号：US11908707

    申请日：2006-03-17

    申请人： Christian Dussarrat ,  Julien Gatineau ,  Kazutaka Yanagita ,  Eri Tsukada ,  Ikuo Suzuki

    发明人： Christian Dussarrat ,  Julien Gatineau ,  Kazutaka Yanagita ,  Eri Tsukada ,  Ikuo Suzuki

    IPC分类号： C23C16/40 ,  C23C16/455

    CPC分类号： H01L21/02164 ,  C23C16/402 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/31612

    摘要： A method of forming a silicon oxide film, comprising the steps of: —providing a treatment substrate within a reaction chamber; —purging the gas within the reaction chamber by feeding an inert gas into the chamber under reduced pressure at a substrate temperature of 50 to 400 C, —adsorbing, at the same temperatures and under reduced pressure, a silicon compound on the treatment substrate by pulsewise introduction of a gaseous silicon compound into the reaction chamber, —purging, at the same temperatures and under reduced pressure, the unadsorbed silicon compound in the reaction chamber with an inert gas, —at the same temperatures and under reduced pressure, introducing a pulse of ozone-containing mixed gas into the reaction chamber and producing silicon oxide by an oxidation reaction with the silicon compound adsorbed on the treatment substrate; and—repeating steps 1) to 4) if necessary to obtain the desired thickness on the substrate.

    摘要翻译： 一种形成氧化硅膜的方法，包括以下步骤： - 在反应室内提供处理衬底; 通过在50至400℃的基板温度下在减压下将惰性气体进料到反应室内，在相同的温度和减压下通过脉冲式在处理基板上吸收硅化合物 将气态硅化合物引入反应室中，在相同的温度和减压下，用惰性气体在相同的温度和减压下，将反应室中的未吸附的硅化合物， 含臭氧的混合气体进入反应室，并与吸附在处理基板上的硅化合物进行氧化反应而生成氧化硅; 并重复步骤1）至4），如果需要在基底上获得所需的厚度。

    LITHIUM PRECURSORS FOR LixMyOz MATERIALS FOR BATTERIES
    29.
    发明申请
    LITHIUM PRECURSORS FOR LixMyOz MATERIALS FOR BATTERIES 审中-公开
    锂离子电池用锂电池

    公开(公告)号：US20120145953A1

    公开(公告)日：2012-06-14

    申请号：US13378093

    申请日：2010-06-30

    申请人： Venkateswara R. Pallem ,  Christian Dussarrat

    发明人： Venkateswara R. Pallem ,  Christian Dussarrat

    IPC分类号： H01M4/485 ,  H01M4/525 ,  H01M4/505 ,  C01D15/02

    CPC分类号： C23C16/45553 ,  C23C16/40 ,  C23C16/409 ,  C23C16/45531

    摘要： Disclosed are lithium-containing compounds and methods of utilizing the same. The disclosed compounds may be used to deposit alkali metal-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. In certain embodiments, the lithium-containing compounds include a ligand and at least one aliphatic group as substituents selected to have greater degrees of freedom than the usual substituent.

    摘要翻译： 公开了含锂化合物及其利用方法。 所公开的化合物可以使用诸如化学气相沉积或原子层沉积的气相沉积方法沉积含碱金属的层。 在某些实施方案中，含锂化合物包括配体和至少一个脂族基团，其被选择为具有比常规取代基更大的自由度。

    DEPOSITION OF TA- OR NB-DOPED HIGH-K FILMS
    30.
    发明申请
    DEPOSITION OF TA- OR NB-DOPED HIGH-K FILMS 有权
    TA-或NB-DOPED高K膜的沉积

    公开(公告)号：US20120065420A1

    公开(公告)日：2012-03-15

    申请号：US13297443

    申请日：2011-11-16

    申请人： Christian Dussarrat

    发明人： Christian Dussarrat

    IPC分类号： C07F9/00

    CPC分类号： H01L21/3141 ,  C07F9/005 ,  C23C16/34 ,  C23C16/405 ,  C23C16/45553 ,  H01L21/31604 ,  H01L21/318

    摘要： Methods and compositions for depositing high-k films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising Ta or Nb. More specifically, the disclosed precursor compounds utilize certain ligands coupled to Ta and/or Nb such as 1-methoxy-2-methyl-2-propanolate (mmp) to increase volatility. Furthermore, methods of depositing Ta or Nb compounds are disclosed in conjunction with use of Hf and/or Zr precursors to deposit Ta-doped or Nb-doped Hf and/or Zr films, The methods and compositions may be used in CVD, ALD, or pulsed CVD deposition processes.

    摘要翻译： 本文公开了用于沉积高k膜的方法和组合物。 通常，所公开的方法使用包含Ta或Nb的前体化合物。 更具体地，所公开的前体化合物利用与Ta和/或Nb偶联的某些配体，例如1-甲氧基-2-甲基-2-丙醇酸（mmp）以增加挥发性。 此外，结合使用Hf和/或Zr前体沉积Ta掺杂或掺铪的Hf和/或Zr膜来公开沉积Ta或Nb化合物的方法。该方法和组合物可用于CVD，ALD， 或脉冲CVD沉积工艺。