公开(公告)号：US20090092759A1

公开(公告)日：2009-04-09

申请号：US11979981

申请日：2007-11-13

申请人： Wen-Chang Chen ,  Hung-Wen Su

发明人： Wen-Chang Chen ,  Hung-Wen Su

IPC分类号： C08G73/10 ,  B05D3/00

CPC分类号： C08G73/1039 ,  C08G73/101 ,  C08G73/1017 ,  C08G73/1067 ,  C08L79/08

摘要： The present invention relates to polyimide-titania hybrid thin film, which possesses relatively good surface planarization, excellent thermal properties (400

摘要翻译： 本发明涉及具有相对良好的表面平坦化，优异的热性能（400

公开(公告)号：US07226860B2

公开(公告)日：2007-06-05

申请号：US10833154

申请日：2004-04-28

申请人： Hsien-Ming Lee ,  Jing-Cheng Lin ,  Shing-Chyang Pan ,  Ming-Hsing Tsai ,  Hung-Wen Su ,  Shih-Wei Chou ,  Shau-Lin Shue ,  Kuo-Wei Cheng ,  Ting-Chu Ko

发明人： Hsien-Ming Lee ,  Jing-Cheng Lin ,  Shing-Chyang Pan ,  Ming-Hsing Tsai ,  Hung-Wen Su ,  Shih-Wei Chou ,  Shau-Lin Shue ,  Kuo-Wei Cheng ,  Ting-Chu Ko

IPC分类号： H01L21/44

CPC分类号： H01L21/2885 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76877

摘要： A method of electrochemical deposition (ECD) provides a barrier and a seed layer on a substrate. The surfaces of the substrate are pre-treated before a metal layer is electrochemically deposited thereon in an electrochemical plating cell with a physical or a chemical surface treatment process. The electrochemical plating cell is covered by a cap to prevent evaporation of the electrolyte solution. The electrochemical plating cell includes a substrate holder assembly with a lift seal, e.g., with a contact angle θ less than 90° between the lift seal and the substrate. The substrate holder assembly includes a substrate chuck at the rear side of the substrate.

公开(公告)号：US20070052096A1

公开(公告)日：2007-03-08

申请号：US11210226

申请日：2005-08-23

申请人： Hung-Wen Su ,  Shih-Wei Chou ,  Ming-Hsing Tsai

发明人： Hung-Wen Su ,  Shih-Wei Chou ,  Ming-Hsing Tsai

IPC分类号： H01L21/4763

CPC分类号： H01L23/528 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76888 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor devices and methods for forming the same in which damages to a low-k dielectric layer therein can be reduced or even prevented are provided. A semiconductor device is provided, comprising a substrate. A dielectric layer with at least one conductive feature therein overlies the substrate. An insulating cap layer overlies the top surface of the low-k dielectric layer adjacent to the conductive feature, wherein the insulating cap layer comprises metal ions.

摘要翻译： 提供了可以减少或甚至防止对其中低k电介质层的损坏的用于形成其的半导体器件及其制造方法。 提供了一种半导体器件，包括衬底。 其中具有至少一个导电特征的电介质层覆盖在衬底上。 绝缘覆盖层覆盖邻近导电特征的低k电介质层的顶表面，其中绝缘帽层包括金属离子。

公开(公告)号：US20060243599A1

公开(公告)日：2006-11-02

申请号：US10908143

申请日：2005-04-28

申请人： Chien-Hsueh Shih ,  Hung-Wen Su

发明人： Chien-Hsueh Shih ,  Hung-Wen Su

IPC分类号： C25D3/00

CPC分类号： C25D3/02 ,  C25D3/38

摘要： Described are methods of and compositions for electrodepositing copper or other metals onto interconnects of a semiconductor substrate from an electroplating composition containing at least one nitrogen-containing additive. The nitrogen-containing additive has a molecular weight of between 10 and 1000, a concentration of between 5.0 and 10.0 milligrams per liter of the electroplating composition. The methods and compositions result in electroplated copper interconnects that have smooth surfaces that are relatively free of pits and humps.

摘要翻译： 描述了从含有至少一种含氮添加剂的电镀组合物将铜或其它金属电沉积在半导体衬底的互连上的方法和组合物。 含氮添加剂的分子量为10至1000，每升电镀组合物的浓度为5.0至10.0毫克。 这些方法和组合物导致电镀铜互连具有相对没有凹坑和凸起的光滑表面。

公开(公告)号：US20060213780A1

公开(公告)日：2006-09-28

申请号：US11087494

申请日：2005-03-24

申请人： Chien-Hsueh Shih ,  Hung-Wen Su

发明人： Chien-Hsueh Shih ,  Hung-Wen Su

IPC分类号： C25D3/38 ,  C25D3/00

CPC分类号： C25D7/123 ,  C25D3/02 ,  C25D3/38

摘要： Electroplating composition and method. In one embodiment, the composition comprises an electrolyte solution and an amine-based copolymer comprising monomer units of ethylene oxide and propylene oxide, with the propylene oxide present in a quantity of at least about 70 wt %. The method comprises electroplating a metal onto a substrate from the electroplating composition of the invention.

摘要翻译： 电镀组合物及方法。 在一个实施方案中，组合物包含电解质溶液和包含环氧乙烷和环氧丙烷的单体单元的胺基共聚物，其中环氧丙烷的存在量为至少约70重量％。 该方法包括从本发明的电镀组合物将金属电镀到基底上。

公开(公告)号：US07101790B2

公开(公告)日：2006-09-05

申请号：US10402545

申请日：2003-03-28

申请人： Hsien-Ming Lee ,  Hung-Wen Su

发明人： Hsien-Ming Lee ,  Hung-Wen Su

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877 ,  H01L2221/1089

摘要： A copper filled semiconductor feature and method of forming the same having improved bulk properties the method including providing a semiconductor process wafer having a process surface including an opening for forming a semiconductor feature; depositing at least one metal dopant containing layer over the opening to form a thermally diffusive relationship to a subsequently deposited copper layer; depositing said copper layer to substantially fill the opening; and, thermally treating the semiconductor process wafer for a time period sufficient to distribute at least a portion of the metal dopants to collect along at least a portion of the periphery of said copper layer including a portion of said copper layer grain boundaries.

摘要翻译： 一种铜填充半导体器件及其制造方法，具有改善的体积特性，该方法包括提供具有包括用于形成半导体特征的开口的工艺表面的半导体工艺晶片; 在所述开口上沉积至少一种含金属掺杂剂层以形成与随后沉积的铜层的热扩散关系; 沉积所述铜层以基本上填充所述开口; 以及对所述半导体工艺晶片进行热处理足以使所述金属掺杂剂的至少一部分分布在包含所述铜层晶界的一部分的所述铜层的周边的至少一部分的时间段内收集。

公开(公告)号：US09123781B2

公开(公告)日：2015-09-01

申请号：US12787559

申请日：2010-05-26

申请人： Hung-Wen Su ,  Shih-Wei Chou ,  Ming-Hsing Tsai

发明人： Hung-Wen Su ,  Shih-Wei Chou ,  Ming-Hsing Tsai

IPC分类号： H01L21/00 ,  H01L21/768 ,  H01L21/285

CPC分类号： H01L23/528 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76888 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor devices and methods for forming the same in which damages to a low-k dielectric layer therein can be reduced or even prevented are provided. A semiconductor device is provided, comprising a substrate. A dielectric layer with at least one conductive feature therein overlies the substrate. An insulating cap layer overlies the top surface of the low-k dielectric layer adjacent to the conductive feature, wherein the insulating cap layer comprises metal ions.

摘要翻译： 提供了可以减少或甚至防止对其中低k电介质层的损坏的用于形成其的半导体器件及其制造方法。 提供了一种半导体器件，包括衬底。 其中具有至少一个导电特征的电介质层覆盖在衬底上。 绝缘覆盖层覆盖邻近导电特征的低k电介质层的顶表面，其中绝缘帽层包括金属离子。

公开(公告)号：US07476306B2

公开(公告)日：2009-01-13

申请号：US10814175

申请日：2004-04-01

申请人： Hung-Wen Su ,  Chien-Hsueh Shih ,  Ming-Hsing Tsai

发明人： Hung-Wen Su ,  Chien-Hsueh Shih ,  Ming-Hsing Tsai

IPC分类号： C25D17/02

CPC分类号： H01L21/2885 ,  C25D7/123 ,  C25D17/001 ,  C25D17/02 ,  C25D21/02

摘要： Apparatus and method for metal electroplating. The apparatus for metal electroplating includes an electroplating tank for containing an electrolyte at a first temperature, a substrate holder for holding a semiconductor substrate, and a heater for heating the portion of the electrolyte adjacent to the substrate holder to a second temperature higher than the first temperature.

摘要翻译： 金属电镀设备及方法 用于金属电镀的设备包括用于在第一温度下容纳电解质的电镀槽，用于保持半导体衬底的衬底保持器和用于将邻近衬底保持器的部分电解质加热至高于第一温度的第二温度的加热器 温度。

公开(公告)号：US07312531B2

公开(公告)日：2007-12-25

申请号：US11261200

申请日：2005-10-28

申请人： Hui-Lin Chang ,  Yung-Cheng Lu ,  Chung-Chi Ko ,  Pi-Tsung Chen ,  Shau-Lin Shue ,  Chien-Hsueh Shih ,  Hung-Wen Su ,  Ming-Hsing Tsai

发明人： Hui-Lin Chang ,  Yung-Cheng Lu ,  Chung-Chi Ko ,  Pi-Tsung Chen ,  Shau-Lin Shue ,  Chien-Hsueh Shih ,  Hung-Wen Su ,  Ming-Hsing Tsai

IPC分类号： H01L29/40 ,  H01L21/44

CPC分类号： H01L23/53276 ,  H01L21/76849 ,  H01L21/76852 ,  H01L21/76879 ,  H01L21/76885 ,  H01L23/5226 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor devices and methods for fabricating the same. The devices include a substrate, a catalyst layer, a second dielectric layer, and carbon nanotubes (CNTs). The substrate comprises an overlying first dielectric layer with an electrode embedded therein. The catalyst layer overlies the electrode and the first dielectric layer and substantially comprises Co and M1, wherein M1 is selected from a group consisting of W, P, B, Bi, Ni, and a combination thereof. The second dielectric layer overlies the catalyst layer and comprises an opening exposing parts of the catalyst layer. The carbon nanotubes (CNTs) are disposed on the exposed catalyst layer and electrically connect the electrode.

公开(公告)号：US07256124B2

公开(公告)日：2007-08-14

申请号：US11094011

申请日：2005-03-30

申请人： Keng-Chu Lin ,  Yi-Chi Liao ,  Hung-Chun Tsai ,  Yung-Cheng Lu ,  Hung-Wen Su

发明人： Keng-Chu Lin ,  Yi-Chi Liao ,  Hung-Chun Tsai ,  Yung-Cheng Lu ,  Hung-Wen Su

IPC分类号： H01L21/44

CPC分类号： H01L21/76877 ,  H01L21/76825

摘要： A method of fabricating a semiconductor device. A semiconductor substrate with a patterned conductive layer on a top surface of the substrate is first provided. A dielectric layer is then formed to cover the substrate. Thereafter, an electron beam irradiation procedure is performed to anneal the patterned conductive layer and reduce resistance of the patterned conductive layer.

摘要翻译： 一种制造半导体器件的方法。 首先提供在基板的顶表面上具有图案化导电层的半导体衬底。 然后形成介电层以覆盖基板。 此后，执行电子束照射程序以退火图案化导电层并降低图案化导电层的电阻。