HIGH VOLTAGE MONOLITHIC LED CHIP
    21.
    发明申请

    公开(公告)号:US20210020805A1

    公开(公告)日:2021-01-21

    申请号:US17062119

    申请日:2020-10-02

    Applicant: Cree, Inc.

    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

    High efficiency LEDs and methods of manufacturing

    公开(公告)号:US10658546B2

    公开(公告)日:2020-05-19

    申请号:US14602040

    申请日:2015-01-21

    Applicant: CREE, INC.

    Abstract: Simplified LED chip architectures or chip builds are disclosed that can result in simpler manufacturing processes using fewer steps. The LED structure can have fewer layers than conventional LED chips with the layers arranged in different ways for efficient fabrication and operation. The LED chips can comprise an active LED structure. A dielectric reflective layer is included adjacent to one of the oppositely doped layers. A metal reflective layer is on the dielectric reflective layer, wherein the dielectric and metal reflective layers extend beyond the edge of said active region. By extending the dielectric layer, the LED chips can emit with more efficiency by reflecting more LED light to emit in the desired direction. By extending the metal reflective layer beyond the edge of the active region, the metal reflective layer can serve as a current spreading layer and barrier, in addition to reflecting LED light to emit in the desired direction. The LED chips can also comprise self-aligned and self-limiting features that simplify etching processes during fabrication.

    Laser-assisted method for parting crystalline material

    公开(公告)号:US10421158B1

    公开(公告)日:2019-09-24

    申请号:US16274064

    申请日:2019-02-12

    Applicant: Cree, Inc.

    Abstract: A method for processing a crystalline substrate to form multiple patterns of subsurface laser damage facilitates subsequent fracture of the substrate to yield first and second substrate portions of reduced thickness. Multiple (e.g., two, three, or more) groups of parallel lines of multiple subsurface laser damage patterns may be sequentially interspersed with one another, with at least some lines of different groups not crossing one another. Certain implementations include formation of multiple subsurface laser damage patterns including groups of parallel lines that are non-parallel to one another, but with each line remaining within ±5 degrees of perpendicular to the direction of a hexagonal crystal structure of a material of the substrate. Further methods involve formation of initial and subsequent subsurface laser damage patterns that are centered at different depths within an interior of a substrate, with the subsurface laser damage patterns being registered with one another and having vertical extents that are overlapping.

    HIGH DENSITY PIXELATED LED AND DEVICES AND METHODS THEREOF

    公开(公告)号:US20170294417A1

    公开(公告)日:2017-10-12

    申请号:US15399729

    申请日:2017-01-05

    Applicant: Cree, Inc.

    Abstract: At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.

    Rare earth optical elements for LED lamp
    26.
    发明授权
    Rare earth optical elements for LED lamp 有权
    LED灯用稀土光学元件

    公开(公告)号:US09243777B2

    公开(公告)日:2016-01-26

    申请号:US13837379

    申请日:2013-03-15

    Applicant: CREE, INC.

    CPC classification number: F21V9/08 C09K11/06 C09K2211/182 G02B1/04 G02B5/206

    Abstract: The present disclosure relates to optical elements and coatings comprising rare-earth element (REE) compounds for light wavelength attenuation of light emitting diode (LED) elements and lamps. More particularly, the present disclosure relates to LED elements and lamps comprising wavelength attenuating elements comprising REE compounds having at least a portion of non-crystalline, non-hydrate form, methods of preparing such elements, and LED elements, LED arrays, LED packages, optical elements, lamps and systems made with same.

    Abstract translation: 本公开涉及包含用于发光二极管(LED)元件和灯的光波长衰减的稀土元素(REE)化合物的光学元件和涂层。 更具体地说,本公开涉及包括波长衰减元件的LED元件和灯,所述波长衰减元件包括具有至少一部分非结晶非水合物形式的REE化合物,制备这些元件的方法,以及LED元件,LED阵列,LED封装, 光学元件,制造的灯和系统。

    High efficiency group III nitride LED with lenticular surface
    27.
    发明授权
    High efficiency group III nitride LED with lenticular surface 有权
    高效率III族氮化物LED带透镜表面

    公开(公告)号:US08878209B2

    公开(公告)日:2014-11-04

    申请号:US14183955

    申请日:2014-02-19

    Applicant: Cree, Inc.

    CPC classification number: H01L33/007 H01L33/22 H01L33/44

    Abstract: A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a Group III nitride-based light emitting region including a plurality of Group III nitride-based layers. A lenticular surface directly contacts one of the Group III nitride-based layers of the light emitting region. The lenticular surface includes a transparent material that is different from the Group III nitride-based layer of the light emitting region that the lenticular surface directly contacts.

    Abstract translation: 公开了一种高效率III族氮化物发光二极管。 二极管包括包含多个III族氮化物基层的III族氮化物基发光区域。 透镜表面直接接触发光区域的III族氮化物基层之一。 透镜表面包括与透镜面直接接触的发光区域的III族氮化物基层不同的透明材料。

    RARE EARTH OPTICAL ELEMENTS FOR LED LAMP
    28.
    发明申请
    RARE EARTH OPTICAL ELEMENTS FOR LED LAMP 有权
    LED灯的稀土光学元件

    公开(公告)号:US20140268794A1

    公开(公告)日:2014-09-18

    申请号:US13837379

    申请日:2013-03-15

    Applicant: CREE, INC.

    CPC classification number: F21V9/08 C09K11/06 C09K2211/182 G02B1/04 G02B5/206

    Abstract: The present disclosure relates to optical elements and coatings comprising rare-earth element (REE) compounds for light wavelength attenuation of light emitting diode (LED) elements and lamps. More particularly, the present disclosure relates to LED elements and lamps comprising wavelength attenuating elements comprising REE compounds having at least a portion of non-crystalline, non-hydrate form, methods of preparing such elements, and LED elements, LED arrays, LED packages, optical elements, lamps and systems made with same.

    Abstract translation: 本公开涉及包含用于发光二极管(LED)元件和灯的光波长衰减的稀土元素(REE)化合物的光学元件和涂层。 更具体地说,本公开涉及包括波长衰减元件的LED元件和灯,所述波长衰减元件包括具有至少一部分非结晶非水合物形式的REE化合物,制备这些元件的方法,以及LED元件,LED阵列,LED封装, 光学元件,制造的灯和系统。

    HIGH EFFICIENCY GROUP III NITRIDE LED WITH LENTICULAR SURFACE
    29.
    发明申请
    HIGH EFFICIENCY GROUP III NITRIDE LED WITH LENTICULAR SURFACE 有权
    高效率III类氮化物LED与光泽表面

    公开(公告)号:US20140167089A1

    公开(公告)日:2014-06-19

    申请号:US14183955

    申请日:2014-02-19

    Applicant: Cree, Inc.

    CPC classification number: H01L33/007 H01L33/22 H01L33/44

    Abstract: A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a Group III nitride-based light emitting region including a plurality of Group III nitride-based layers. A lenticular surface directly contacts one of the Group III nitride-based layers of the light emitting region. The lenticular surface includes a transparent material that is different from the Group III nitride-based layer of the light emitting region that the lenticular surface directly contacts.

    Abstract translation: 公开了一种高效率III族氮化物发光二极管。 二极管包括包含多个III族氮化物基层的III族氮化物基发光区域。 透镜表面直接接触发光区域的III族氮化物基层之一。 透镜表面包括与透镜面直接接触的发光区域的III族氮化物基层不同的透明材料。

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